KR102521160B1 - 할로겐 제거 모듈 및 연관된 시스템들 및 방법들 - Google Patents

할로겐 제거 모듈 및 연관된 시스템들 및 방법들 Download PDF

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KR102521160B1
KR102521160B1 KR1020180048466A KR20180048466A KR102521160B1 KR 102521160 B1 KR102521160 B1 KR 102521160B1 KR 1020180048466 A KR1020180048466 A KR 1020180048466A KR 20180048466 A KR20180048466 A KR 20180048466A KR 102521160 B1 KR102521160 B1 KR 102521160B1
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substrate
processing region
gas
chamber
time
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KR20180124726A (ko
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트래비스 알. 테일러
아담 베이트먼
토드 에이. 로페스
산카라나라야난 라비
실비아 아귈라
데렉 윗코위키
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H01L21/67063—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H01L21/306—
    • H01L21/324—
    • H01L21/67098—
    • H01L21/67248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020180048466A 2017-05-12 2018-04-26 할로겐 제거 모듈 및 연관된 시스템들 및 방법들 Active KR102521160B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/594,118 US10903065B2 (en) 2017-05-12 2017-05-12 Halogen removal module and associated systems and methods
US15/594,118 2017-05-12

Publications (2)

Publication Number Publication Date
KR20180124726A KR20180124726A (ko) 2018-11-21
KR102521160B1 true KR102521160B1 (ko) 2023-04-12

Family

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KR1020180048466A Active KR102521160B1 (ko) 2017-05-12 2018-04-26 할로겐 제거 모듈 및 연관된 시스템들 및 방법들

Country Status (4)

Country Link
US (1) US10903065B2 (https=)
JP (1) JP7211716B2 (https=)
KR (1) KR102521160B1 (https=)
CN (1) CN108878313B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2019361520B2 (en) 2018-10-17 2025-04-24 Nippon Chemiphar Co., Ltd. Novel pharmaceutical composition
US10777445B2 (en) * 2018-12-06 2020-09-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate transfer method
FR3092436B1 (fr) * 2019-02-04 2021-02-12 Aloxtec Four d’oxydation latérale de VCSEL avec modification locale de la vitesse d’oxydation
JP7355615B2 (ja) * 2019-11-25 2023-10-03 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
GB202015527D0 (en) * 2020-09-30 2020-11-11 Lam Res Ag Apparatus for processing wafer-shaped articles
WO2022192460A1 (en) * 2021-03-11 2022-09-15 Applied Materials, Inc. Systems and methods for fabrication of micro-led displays
US11921422B2 (en) * 2021-04-09 2024-03-05 Applied Materials, Inc. Single-volume baking chamber for mask clean

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243014A (ja) * 2006-03-10 2007-09-20 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP2008109136A (ja) * 2006-10-26 2008-05-08 Applied Materials Inc 熱プロセスによってエッチングされた基板からハロゲン残渣を除去するための統合された方法
WO2012117943A1 (ja) * 2011-02-28 2012-09-07 東京エレクトロン株式会社 被処理基板処理用ハロゲン除去装置、被処理基板処理装置、および被処理基板処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855024A (en) * 1971-11-01 1974-12-17 Western Electric Co Method of vapor-phase polishing a surface of a semiconductor
US4778532A (en) * 1985-06-24 1988-10-18 Cfm Technologies Limited Partnership Process and apparatus for treating wafers with process fluids
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
WO1997011482A2 (en) * 1995-09-05 1997-03-27 Lsi Logic Corporation Removal of halogens and photoresist from wafers
JP4518986B2 (ja) * 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
JP4979079B2 (ja) * 2007-07-09 2012-07-18 東京エレクトロン株式会社 基板処理装置
US8616821B2 (en) * 2010-08-26 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated apparatus to assure wafer quality and manufacturability
JP6767257B2 (ja) * 2016-12-22 2020-10-14 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243014A (ja) * 2006-03-10 2007-09-20 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP2008109136A (ja) * 2006-10-26 2008-05-08 Applied Materials Inc 熱プロセスによってエッチングされた基板からハロゲン残渣を除去するための統合された方法
WO2012117943A1 (ja) * 2011-02-28 2012-09-07 東京エレクトロン株式会社 被処理基板処理用ハロゲン除去装置、被処理基板処理装置、および被処理基板処理方法

Also Published As

Publication number Publication date
CN108878313B (zh) 2023-10-27
KR20180124726A (ko) 2018-11-21
JP7211716B2 (ja) 2023-01-24
CN108878313A (zh) 2018-11-23
US10903065B2 (en) 2021-01-26
JP2018195810A (ja) 2018-12-06
US20180330942A1 (en) 2018-11-15

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