KR102468348B1 - 멀티 빔 묘화 방법 및 멀티 빔 묘화 장치 - Google Patents

멀티 빔 묘화 방법 및 멀티 빔 묘화 장치 Download PDF

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KR102468348B1
KR102468348B1 KR1020200090035A KR20200090035A KR102468348B1 KR 102468348 B1 KR102468348 B1 KR 102468348B1 KR 1020200090035 A KR1020200090035 A KR 1020200090035A KR 20200090035 A KR20200090035 A KR 20200090035A KR 102468348 B1 KR102468348 B1 KR 102468348B1
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beams
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KR20210012940A (ko
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히로시 마츠모토
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가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H01J2237/30461—Correction during exposure pre-calculated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020200090035A 2019-07-25 2020-07-21 멀티 빔 묘화 방법 및 멀티 빔 묘화 장치 Active KR102468348B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019137072A JP7238672B2 (ja) 2019-07-25 2019-07-25 マルチビーム描画方法及びマルチビーム描画装置
JPJP-P-2019-137072 2019-07-25

Publications (2)

Publication Number Publication Date
KR20210012940A KR20210012940A (ko) 2021-02-03
KR102468348B1 true KR102468348B1 (ko) 2022-11-17

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Country Status (5)

Country Link
US (1) US11170976B2 (https=)
JP (1) JP7238672B2 (https=)
KR (1) KR102468348B1 (https=)
CN (1) CN112286003B (https=)
TW (1) TWI751597B (https=)

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JP7726090B2 (ja) 2022-02-15 2025-08-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム装置の光学系調整方法及びプログラム

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JP2016225357A (ja) 2015-05-27 2016-12-28 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2017028284A (ja) * 2015-07-23 2017-02-02 大日本印刷株式会社 荷電粒子ビーム描画装置、その制御方法および補正描画データ作成方法

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TW546549B (en) * 1998-11-17 2003-08-11 Advantest Corp Electron beam exposure apparatus and exposure method
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP4244771B2 (ja) * 2003-05-29 2009-03-25 パナソニック株式会社 フォーカスずれ量の測定方法および露光方法
TWI290430B (en) * 2005-02-02 2007-11-21 Shimadzu Corp Scanning electron beam device
JP4476975B2 (ja) * 2005-10-25 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
EP2388801B1 (en) * 2009-03-16 2012-11-07 Advantest Corporation Multi-column electron beam lithography system and electron beam orbit adjusting method thereof
JP5576332B2 (ja) * 2011-04-06 2014-08-20 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
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JP6438280B2 (ja) * 2014-11-28 2018-12-12 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6453072B2 (ja) 2014-12-22 2019-01-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6523767B2 (ja) * 2015-04-21 2019-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6674327B2 (ja) * 2016-06-03 2020-04-01 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
JP7002837B2 (ja) * 2016-10-26 2022-01-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
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JP2015204404A (ja) 2014-04-15 2015-11-16 株式会社ニューフレアテクノロジー マルチビーム描画方法およびマルチビーム描画装置
JP2016225357A (ja) 2015-05-27 2016-12-28 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
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TW202105080A (zh) 2021-02-01
US20210027986A1 (en) 2021-01-28
KR20210012940A (ko) 2021-02-03
JP2021022616A (ja) 2021-02-18
TWI751597B (zh) 2022-01-01
JP7238672B2 (ja) 2023-03-14
CN112286003B (zh) 2023-11-03
US11170976B2 (en) 2021-11-09
CN112286003A (zh) 2021-01-29

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