TWI751597B - 多射束描繪方法及多射束描繪裝置 - Google Patents

多射束描繪方法及多射束描繪裝置 Download PDF

Info

Publication number
TWI751597B
TWI751597B TW109122324A TW109122324A TWI751597B TW I751597 B TWI751597 B TW I751597B TW 109122324 A TW109122324 A TW 109122324A TW 109122324 A TW109122324 A TW 109122324A TW I751597 B TWI751597 B TW I751597B
Authority
TW
Taiwan
Prior art keywords
positional deviation
data
coefficient data
time
deviation data
Prior art date
Application number
TW109122324A
Other languages
English (en)
Chinese (zh)
Other versions
TW202105080A (zh
Inventor
松本裕史
Original Assignee
日商紐富來科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商紐富來科技股份有限公司 filed Critical 日商紐富來科技股份有限公司
Publication of TW202105080A publication Critical patent/TW202105080A/zh
Application granted granted Critical
Publication of TWI751597B publication Critical patent/TWI751597B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H01J2237/30461—Correction during exposure pre-calculated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW109122324A 2019-07-25 2020-07-24 多射束描繪方法及多射束描繪裝置 TWI751597B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019137072A JP7238672B2 (ja) 2019-07-25 2019-07-25 マルチビーム描画方法及びマルチビーム描画装置
JP2019-137072 2019-07-25

Publications (2)

Publication Number Publication Date
TW202105080A TW202105080A (zh) 2021-02-01
TWI751597B true TWI751597B (zh) 2022-01-01

Family

ID=74189182

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109122324A TWI751597B (zh) 2019-07-25 2020-07-24 多射束描繪方法及多射束描繪裝置

Country Status (5)

Country Link
US (1) US11170976B2 (https=)
JP (1) JP7238672B2 (https=)
KR (1) KR102468348B1 (https=)
CN (1) CN112286003B (https=)
TW (1) TWI751597B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7726090B2 (ja) 2022-02-15 2025-08-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム装置の光学系調整方法及びプログラム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170352520A1 (en) * 2016-06-03 2017-12-07 Nuflare Technology, Inc. Multi charged particle beam exposure method, and multi charged particle beam exposure apparatus
US20180114673A1 (en) * 2016-10-26 2018-04-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus, and multi charged particle beam writing method
TW201921413A (zh) * 2017-08-02 2019-06-01 日商紐富來科技股份有限公司 多帶電粒子束描繪裝置及多帶電粒子束描繪方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343306A (ja) * 1992-06-05 1993-12-24 Hitachi Ltd 電子線描画装置
TW546549B (en) * 1998-11-17 2003-08-11 Advantest Corp Electron beam exposure apparatus and exposure method
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP4244771B2 (ja) * 2003-05-29 2009-03-25 パナソニック株式会社 フォーカスずれ量の測定方法および露光方法
TWI290430B (en) * 2005-02-02 2007-11-21 Shimadzu Corp Scanning electron beam device
JP4476975B2 (ja) * 2005-10-25 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
EP2388801B1 (en) * 2009-03-16 2012-11-07 Advantest Corporation Multi-column electron beam lithography system and electron beam orbit adjusting method thereof
JP5576332B2 (ja) * 2011-04-06 2014-08-20 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
JP5832141B2 (ja) * 2011-05-16 2015-12-16 キヤノン株式会社 描画装置、および、物品の製造方法
JP5859778B2 (ja) 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6147528B2 (ja) 2012-06-01 2017-06-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6080540B2 (ja) 2012-12-26 2017-02-15 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置
JP2015095566A (ja) * 2013-11-12 2015-05-18 キヤノン株式会社 描画装置、および物品の製造方法
JP6190254B2 (ja) * 2013-12-04 2017-08-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6353229B2 (ja) 2014-01-22 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6403045B2 (ja) 2014-04-15 2018-10-10 株式会社ニューフレアテクノロジー マルチビーム描画方法およびマルチビーム描画装置
US20160015561A1 (en) 2014-07-18 2016-01-21 Richard Leichter Heatable and Coolable Therapeutic Device
JP2016072497A (ja) * 2014-09-30 2016-05-09 株式会社ニューフレアテクノロジー 加速電圧ドリフトの補正方法、荷電粒子ビームのドリフト補正方法、及び荷電粒子ビーム描画装置
JP6438280B2 (ja) * 2014-11-28 2018-12-12 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6453072B2 (ja) 2014-12-22 2019-01-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6523767B2 (ja) * 2015-04-21 2019-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2016225357A (ja) * 2015-05-27 2016-12-28 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6823823B2 (ja) * 2015-07-23 2021-02-03 大日本印刷株式会社 荷電粒子ビーム描画装置、その制御方法および補正描画データ作成方法
JP2018133428A (ja) * 2017-02-15 2018-08-23 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法
JP7002243B2 (ja) 2017-08-04 2022-01-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6863208B2 (ja) * 2017-09-29 2021-04-21 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US10651010B2 (en) * 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
JP6966342B2 (ja) * 2018-01-31 2021-11-17 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170352520A1 (en) * 2016-06-03 2017-12-07 Nuflare Technology, Inc. Multi charged particle beam exposure method, and multi charged particle beam exposure apparatus
US20180114673A1 (en) * 2016-10-26 2018-04-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus, and multi charged particle beam writing method
TW201921413A (zh) * 2017-08-02 2019-06-01 日商紐富來科技股份有限公司 多帶電粒子束描繪裝置及多帶電粒子束描繪方法

Also Published As

Publication number Publication date
TW202105080A (zh) 2021-02-01
US20210027986A1 (en) 2021-01-28
KR20210012940A (ko) 2021-02-03
JP2021022616A (ja) 2021-02-18
JP7238672B2 (ja) 2023-03-14
CN112286003B (zh) 2023-11-03
KR102468348B1 (ko) 2022-11-17
US11170976B2 (en) 2021-11-09
CN112286003A (zh) 2021-01-29

Similar Documents

Publication Publication Date Title
KR101476390B1 (ko) 멀티 하전 입자빔 묘화 방법 및 멀티 하전 입자빔 묘화 장치
KR101778280B1 (ko) 멀티 하전 입자빔 묘화 장치 및 멀티 하전 입자빔 묘화 방법
KR20180035178A (ko) 전자 빔 장치 및 전자 빔의 위치 이탈 보정 방법
KR20180035177A (ko) 하전 입자 빔 장치 및 하전 입자 빔의 위치 이탈 보정 방법
TW201923815A (zh) 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
US9852876B2 (en) Multi charged particle beam writing apparatus and multi charged particle beam writing method
TWI661279B (zh) Multi-charged particle beam drawing device and multi-charged particle beam drawing method
JP6627632B2 (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
KR101698892B1 (ko) 데이터 생성 장치, 에너지빔 묘화 장치, 및 에너지빔 묘화 방법
TWI798761B (zh) 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
TW201832264A (zh) 多帶電粒子束描繪裝置及其調整方法
TWI767279B (zh) 多射束描繪方法及多射束描繪裝置
TWI751597B (zh) 多射束描繪方法及多射束描繪裝置
TWI793574B (zh) 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
TWI762954B (zh) 多重束描繪方法及多重束描繪裝置
TWI888060B (zh) 多帶電粒子束描繪區域的有效溫度算出方法，多帶電粒子束描繪裝置，多帶電粒子束描繪方法，及程式
TWI864569B (zh) 多帶電粒子束裝置的光學系統調整方法及電腦可讀取記錄媒體
TWI864700B (zh) 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
TWI908233B (zh) 帶電粒子束描繪裝置，漂移量算出方法及帶電粒子束描繪方法
TWI913611B (zh) 位置計測裝置、帶電粒子束描繪裝置以及標記位置計測方法
KR102845204B1 (ko) 피복률 산출 방법, 하전 입자 빔 묘화 방법, 피복률 산출 장치, 하전 입자 빔 묘화 장치 및 컴퓨터 판독 가능한 기록 매체에 기록된 프로그램
TW202607772A (zh) 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
JP6665818B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP2020205314A (ja) マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置