KR102452808B1 - 하드마스크용 조성물 - Google Patents

하드마스크용 조성물 Download PDF

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Publication number
KR102452808B1
KR102452808B1 KR1020160075050A KR20160075050A KR102452808B1 KR 102452808 B1 KR102452808 B1 KR 102452808B1 KR 1020160075050 A KR1020160075050 A KR 1020160075050A KR 20160075050 A KR20160075050 A KR 20160075050A KR 102452808 B1 KR102452808 B1 KR 102452808B1
Authority
KR
South Korea
Prior art keywords
formula
group
carbon atoms
composition
hard mask
Prior art date
Application number
KR1020160075050A
Other languages
English (en)
Korean (ko)
Other versions
KR20170141960A (ko
Inventor
최한영
양돈식
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to KR1020160075050A priority Critical patent/KR102452808B1/ko
Priority to TW106112551A priority patent/TWI697738B/zh
Priority to CN201710353841.4A priority patent/CN107526252B/zh
Publication of KR20170141960A publication Critical patent/KR20170141960A/ko
Application granted granted Critical
Publication of KR102452808B1 publication Critical patent/KR102452808B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020160075050A 2016-06-16 2016-06-16 하드마스크용 조성물 KR102452808B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020160075050A KR102452808B1 (ko) 2016-06-16 2016-06-16 하드마스크용 조성물
TW106112551A TWI697738B (zh) 2016-06-16 2017-04-14 硬遮罩用組成物
CN201710353841.4A CN107526252B (zh) 2016-06-16 2017-05-18 硬掩模用组合物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160075050A KR102452808B1 (ko) 2016-06-16 2016-06-16 하드마스크용 조성물

Publications (2)

Publication Number Publication Date
KR20170141960A KR20170141960A (ko) 2017-12-27
KR102452808B1 true KR102452808B1 (ko) 2022-10-07

Family

ID=60748672

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160075050A KR102452808B1 (ko) 2016-06-16 2016-06-16 하드마스크용 조성물

Country Status (3)

Country Link
KR (1) KR102452808B1 (zh)
CN (1) CN107526252B (zh)
TW (1) TWI697738B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10604618B2 (en) * 2018-06-20 2020-03-31 Shin-Etsu Chemical Co., Ltd. Compound, method for manufacturing the compound, and composition for forming organic film
JP7316237B2 (ja) * 2020-03-02 2023-07-27 信越化学工業株式会社 有機膜形成材料、有機膜形成方法、パターン形成方法及び化合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100826104B1 (ko) 2006-12-29 2008-04-29 제일모직주식회사 고 내에칭성 반사방지 하드마스크 조성물　및　이를 이용한패턴화된 재료 형상의　제조방법
KR101425135B1 (ko) 2012-09-21 2014-07-31 금호석유화학 주식회사 용해도가 개선된 고내에칭성 카본 하드마스크 중합체 및 이를 포함하는 카본 하드마스크 조성물, 및 이를 이용한 반도체 소자의 패턴 형성 방법
KR101572594B1 (ko) 2015-04-01 2015-11-27 최상준 반사방지용 하드마스크 조성물

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DE602004026635D1 (de) * 2003-12-26 2010-05-27 Nissan Chemical Ind Ltd Zusammensetzung zur bildung eines nitridbeschichtungsfilms für eine hartmaske
TWI414893B (zh) * 2006-03-14 2013-11-11 Jsr Corp 底層膜形成用組成物及圖型之形成方法
KR100896451B1 (ko) * 2006-12-30 2009-05-14 제일모직주식회사 카본 함량이 개선된 고 내에칭성 반사방지 하드마스크조성물, 이를 이용한 패턴화된 재료 형상의　제조방법
CN101802713A (zh) 2007-10-01 2010-08-11 日产化学工业株式会社 形成抗蚀剂下层膜的组合物、使用该组合物的半导体装置的制造方法以及形成抗蚀剂下层膜的组合物用添加剂
JP6066092B2 (ja) * 2011-09-29 2017-01-25 日産化学工業株式会社 ジアリールアミンノボラック樹脂
KR101413069B1 (ko) * 2011-12-30 2014-07-02 제일모직 주식회사 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
CN104114596A (zh) * 2012-02-27 2014-10-22 三菱瓦斯化学株式会社 进行了酸性处理的单烷基萘甲醛树脂
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
EP2937385A4 (en) * 2012-12-18 2016-07-20 Nissan Chemical Ind Ltd FLOOR LAYERING COMPOSITION OF A SELF-ORGANIZING, FILM-STYLENE STRUCTURE
JP6478051B2 (ja) * 2013-06-26 2019-03-06 日産化学株式会社 置換された架橋性化合物を含むレジスト下層膜形成組成物
KR101684977B1 (ko) * 2013-06-28 2016-12-09 제일모직 주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
CN105392765B (zh) * 2013-07-19 2018-03-02 Dic株式会社 含酚羟基的化合物、感光性组合物、抗蚀剂用组合物、抗蚀剂涂膜、固化性组合物、抗蚀剂下层膜用组合物、及抗蚀剂下层膜
WO2015041143A1 (ja) * 2013-09-18 2015-03-26 Dic株式会社 変性ヒドロキシナフタレンノボラック樹脂、変性ヒドロキシナフタレンノボラック樹脂の製造方法、感光性組成物、レジスト材料及び塗膜
KR102367638B1 (ko) * 2014-03-31 2022-02-28 닛산 가가쿠 가부시키가이샤 방향족 비닐화합물이 부가된 노볼락수지를 포함하는 레지스트 하층막 형성 조성물
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100826104B1 (ko) 2006-12-29 2008-04-29 제일모직주식회사 고 내에칭성 반사방지 하드마스크 조성물　및　이를 이용한패턴화된 재료 형상의　제조방법
KR101425135B1 (ko) 2012-09-21 2014-07-31 금호석유화학 주식회사 용해도가 개선된 고내에칭성 카본 하드마스크 중합체 및 이를 포함하는 카본 하드마스크 조성물, 및 이를 이용한 반도체 소자의 패턴 형성 방법
KR101572594B1 (ko) 2015-04-01 2015-11-27 최상준 반사방지용 하드마스크 조성물

Also Published As

Publication number Publication date
CN107526252B (zh) 2022-01-25
CN107526252A (zh) 2017-12-29
TW201809886A (zh) 2018-03-16
TWI697738B (zh) 2020-07-01
KR20170141960A (ko) 2017-12-27

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