KR102440569B1 - 레이저 가공 장치 - Google Patents

레이저 가공 장치 Download PDF

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Publication number
KR102440569B1
KR102440569B1 KR1020160109190A KR20160109190A KR102440569B1 KR 102440569 B1 KR102440569 B1 KR 102440569B1 KR 1020160109190 A KR1020160109190 A KR 1020160109190A KR 20160109190 A KR20160109190 A KR 20160109190A KR 102440569 B1 KR102440569 B1 KR 102440569B1
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KR
South Korea
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KR1020160109190A
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English (en)
Korean (ko)
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KR20170029381A (ko
Inventor
도모유키 야구치
다이키 사와베
가즈히코 이다
Original Assignee
가부시기가이샤 디스코
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Publication of KR20170029381A publication Critical patent/KR20170029381A/ko
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Publication of KR102440569B1 publication Critical patent/KR102440569B1/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
KR1020160109190A 2015-09-07 2016-08-26 레이저 가공 장치 KR102440569B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015175796A JP6643837B2 (ja) 2015-09-07 2015-09-07 レーザー加工装置
JPJP-P-2015-175796 2015-09-07

Publications (2)

Publication Number Publication Date
KR20170029381A KR20170029381A (ko) 2017-03-15
KR102440569B1 true KR102440569B1 (ko) 2022-09-05

Family

ID=58289964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160109190A KR102440569B1 (ko) 2015-09-07 2016-08-26 레이저 가공 장치

Country Status (4)

Country Link
JP (1) JP6643837B2 (zh)
KR (1) KR102440569B1 (zh)
CN (1) CN106493470B (zh)
TW (1) TWI687274B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110587161A (zh) * 2019-10-11 2019-12-20 中船黄埔文冲船舶有限公司 一种焊接压力架拼板的定位装置
CN113695756B (zh) * 2020-05-19 2024-03-12 大族激光科技产业集团股份有限公司 激光切割的光斑补偿方法、装置、设备以及存储介质

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007275962A (ja) 2006-04-10 2007-10-25 Disco Abrasive Syst Ltd レーザー加工装置
JP2009220128A (ja) 2008-03-13 2009-10-01 Disco Abrasive Syst Ltd ワーク加工方法およびワーク加工装置
JP2013000777A (ja) 2011-06-17 2013-01-07 Disco Corp レーザー加工装置
JP2013031871A (ja) 2011-08-02 2013-02-14 Disco Corp 変位量検出方法およびレーザー加工装置
JP2015131303A (ja) * 2014-01-09 2015-07-23 株式会社ディスコ レーザー加工装置における加工送り機構の作動特性検出方法およびレーザー加工装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63230287A (ja) * 1987-01-22 1988-09-26 Jido Hosei Syst Gijutsu Kenkyu Kumiai レ−ザ加工における加工誤差補正方法
JP4277747B2 (ja) * 2004-06-28 2009-06-10 パナソニック株式会社 レーザ加工装置
JP4694900B2 (ja) * 2005-06-28 2011-06-08 株式会社ディスコ レーザー加工方法
JP5007090B2 (ja) * 2006-09-11 2012-08-22 株式会社ディスコ レーザー加工方法
JP6030299B2 (ja) * 2011-12-20 2016-11-24 株式会社ディスコ レーザー加工装置
JP6148075B2 (ja) * 2013-05-31 2017-06-14 株式会社ディスコ レーザー加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007275962A (ja) 2006-04-10 2007-10-25 Disco Abrasive Syst Ltd レーザー加工装置
JP2009220128A (ja) 2008-03-13 2009-10-01 Disco Abrasive Syst Ltd ワーク加工方法およびワーク加工装置
JP2013000777A (ja) 2011-06-17 2013-01-07 Disco Corp レーザー加工装置
JP2013031871A (ja) 2011-08-02 2013-02-14 Disco Corp 変位量検出方法およびレーザー加工装置
JP2015131303A (ja) * 2014-01-09 2015-07-23 株式会社ディスコ レーザー加工装置における加工送り機構の作動特性検出方法およびレーザー加工装置

Also Published As

Publication number Publication date
JP6643837B2 (ja) 2020-02-12
CN106493470B (zh) 2020-02-21
TW201713444A (zh) 2017-04-16
CN106493470A (zh) 2017-03-15
JP2017051961A (ja) 2017-03-16
KR20170029381A (ko) 2017-03-15
TWI687274B (zh) 2020-03-11

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