KR102432745B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR102432745B1
KR102432745B1 KR1020160003341A KR20160003341A KR102432745B1 KR 102432745 B1 KR102432745 B1 KR 102432745B1 KR 1020160003341 A KR1020160003341 A KR 1020160003341A KR 20160003341 A KR20160003341 A KR 20160003341A KR 102432745 B1 KR102432745 B1 KR 102432745B1
Authority
KR
South Korea
Prior art keywords
region
resistor
power element
semiconductor substrate
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020160003341A
Other languages
English (en)
Korean (ko)
Other versions
KR20160088807A (ko
Inventor
가즈히로 츠무라
Original Assignee
에이블릭 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이블릭 가부시키가이샤 filed Critical 에이블릭 가부시키가이샤
Publication of KR20160088807A publication Critical patent/KR20160088807A/ko
Application granted granted Critical
Publication of KR102432745B1 publication Critical patent/KR102432745B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L29/0646—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H01L21/761—
    • H01L22/12—
    • H01L29/1058—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
    • H10D84/154—LDMOS having built-in components the built-in component being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020160003341A 2015-01-16 2016-01-11 반도체 장치 Active KR102432745B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015007228A JP6436791B2 (ja) 2015-01-16 2015-01-16 半導体装置
JPJP-P-2015-007228 2015-01-16

Publications (2)

Publication Number Publication Date
KR20160088807A KR20160088807A (ko) 2016-07-26
KR102432745B1 true KR102432745B1 (ko) 2022-08-16

Family

ID=56408409

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160003341A Active KR102432745B1 (ko) 2015-01-16 2016-01-11 반도체 장치

Country Status (5)

Country Link
US (1) US9472547B2 (https=)
JP (1) JP6436791B2 (https=)
KR (1) KR102432745B1 (https=)
CN (1) CN105810678B (https=)
TW (1) TWI666731B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6305468B2 (ja) 2016-07-06 2018-04-04 株式会社ニトムズ 粘着クリーナー
JP2018055742A (ja) * 2016-09-28 2018-04-05 エイブリック株式会社 不揮発性半導体記憶装置
WO2020162013A1 (ja) * 2019-02-07 2020-08-13 富士電機株式会社 半導体装置
EP3973260A4 (en) * 2019-05-21 2023-12-20 Nextinput, Inc. COMBINED NEAR AND MID INFRARED SENSOR IN A CHIP-SIZE HOUSING
TWI742613B (zh) * 2020-04-14 2021-10-11 聯陽半導體股份有限公司 積體電路的溫度感測裝置
CN111682070A (zh) * 2020-07-30 2020-09-18 电子科技大学 抑制可控型采样场效应晶体管负温度特性的器件
US12176289B2 (en) 2022-03-24 2024-12-24 International Business Machines Corporation Semiconductor device design mitigating latch-up

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198821A (ja) * 2007-02-14 2008-08-28 Ricoh Co Ltd 過熱保護回路を備える定電圧回路を内蔵した半導体装置
JP2011066473A (ja) * 2009-09-15 2011-03-31 Ricoh Co Ltd 半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
JP2522208B2 (ja) * 1987-03-19 1996-08-07 日本電装株式会社 半導体装置
JP3125529B2 (ja) * 1993-08-23 2001-01-22 富士電機株式会社 半導体装置
JP2701824B2 (ja) 1996-02-09 1998-01-21 株式会社デンソー 半導体装置
JP3431127B2 (ja) * 1997-03-31 2003-07-28 松下電器産業株式会社 電子装置および電子スイッチ装置
DE102004021393B4 (de) * 2004-04-30 2006-06-14 Infineon Technologies Ag Feldeffekt-Leistungstransistor
DE102004047752B3 (de) * 2004-09-30 2006-01-26 Infineon Technologies Ag Halbleiterbauteil mit Temperatursensor
JP5028748B2 (ja) * 2005-04-15 2012-09-19 富士電機株式会社 パワー半導体デバイスの温度計測装置
JP5125106B2 (ja) * 2007-01-15 2013-01-23 株式会社デンソー 半導体装置
JP4934491B2 (ja) * 2007-05-09 2012-05-16 株式会社リコー 過熱保護回路およびそれを具備する電子機器、ならびにその制御方法
JP2008301305A (ja) * 2007-06-01 2008-12-11 Renesas Technology Corp 半導体集積回路
US8089134B2 (en) * 2008-02-06 2012-01-03 Fuji Electric Sytems Co., Ltd. Semiconductor device
DE102008011816B4 (de) * 2008-02-29 2015-05-28 Advanced Micro Devices, Inc. Temperaturüberwachung in einem Halbleiterbauelement unter Anwendung eines pn-Übergangs auf der Grundlage von Silizium/Germaniummaterial
US9559162B2 (en) * 2013-06-19 2017-01-31 Globalfoundries Inc. Thermoresistance sensor structure for integrated circuits and method of making

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198821A (ja) * 2007-02-14 2008-08-28 Ricoh Co Ltd 過熱保護回路を備える定電圧回路を内蔵した半導体装置
JP2011066473A (ja) * 2009-09-15 2011-03-31 Ricoh Co Ltd 半導体装置

Also Published As

Publication number Publication date
TW201637132A (zh) 2016-10-16
TWI666731B (zh) 2019-07-21
JP6436791B2 (ja) 2018-12-12
CN105810678B (zh) 2020-09-01
CN105810678A (zh) 2016-07-27
US9472547B2 (en) 2016-10-18
JP2016134455A (ja) 2016-07-25
KR20160088807A (ko) 2016-07-26
US20160211256A1 (en) 2016-07-21

Similar Documents

Publication Publication Date Title
KR102432745B1 (ko) 반도체 장치
JP5028748B2 (ja) パワー半導体デバイスの温度計測装置
JP3485655B2 (ja) 複合型ｍｏｓｆｅｔ
US7307328B2 (en) Semiconductor device with temperature sensor
US20170309739A1 (en) Semiconductor Device Having First and Second Circuits Integrated in a Semiconductor Body
JP2005203446A (ja) 温度検出機能付き半導体装置
US9865586B2 (en) Semiconductor device and method for testing the semiconductor device
US10014287B2 (en) Semiconductor device
US7843006B2 (en) Semiconductor component arrangement having a power transistor and a temperature measuring arrangement
JP5147203B2 (ja) 絶縁ゲート型半導体装置
JPH06500668A (ja) Ｃｍｏｓ技術のモノリシック集積センサ回路
CN115954359B (zh) 半导体器件及其制造方法、温度检测电路
KR101522946B1 (ko) 반도체 장치
JP6890480B2 (ja) 半導体装置
JP2002222953A (ja) 半導体装置
JPH11214691A (ja) 半導体装置
JP2006100690A (ja) パワートランジスタ温度保護装置
JP6011457B2 (ja) 半導体装置
JP2016152335A (ja) 半導体装置
JP2014053391A (ja) 半導体装置
JP2013153018A (ja) 半導体装置
JP2013222872A (ja) 半導体装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000