KR102430361B1 - Adsorption apparatus, apparatus for forming film, adsorption method, method for forming film, and manufacturing method of electronic device - Google Patents

Abstract

The adsorption apparatus of the present invention includes an adsorbent supporting unit for supporting an adsorbed body, an electrostatic chuck installed on one side of the adsorbed body supporting unit for adsorbing the adsorbed body, and a distance between the adsorbed body supporting unit and the electrostatic chuck a distance adjusting means for adjusting the distance; The distance adjusting means is controlled so that the distance between the electrostatic chuck and the adsorbed body supporting unit is spaced apart by a predetermined interval, and the adsorbed body is supported while the adsorbed body supporting unit and the electrostatic chuck are spaced apart by the predetermined distance. It is characterized in that a voltage for sucking the adsorbed body supported by the unit in a direction toward the electrostatic chuck is controlled to be applied to the electrostatic chuck.

Description

ADSORPTION APPARATUS, APPARATUS FOR FORMING FILM, ADSORPTION METHOD, METHOD FOR FORMING FILM, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

The present invention relates to an adsorption apparatus, a film forming apparatus, an adsorption method, a film forming method, and a manufacturing method of an electronic device.

In the manufacture of an organic EL display device (organic EL display), when an organic light emitting element (organic EL element; OLED) constituting an organic EL display device is formed, the deposition material evaporated from the deposition source of the film forming device is used as a pixel pattern. By depositing on the substrate through the formed mask, an organic material layer or a metal layer is formed.

In the deposition apparatus of the deposition method (depo-up), the deposition source is installed below the vacuum container of the deposition apparatus, the substrate is disposed on the top of the vacuum container, and deposition is performed on the lower surface of the substrate. In the vacuum container of this upward deposition type film forming apparatus, since only the periphery of the lower surface of the substrate is held and supported by the substrate holder, the substrate sags by its own weight, which is one factor that lowers the deposition accuracy. is becoming Even in a film forming apparatus of a method other than the top-up deposition method, there is a possibility that the substrate may sag due to its own weight.

A technique using an electrostatic chuck is being studied as a method for reducing the sagging of the substrate due to its own weight. That is, sagging of the substrate can be reduced by adsorbing the upper surface of the substrate over the entire surface with the electrostatic chuck.

Patent Document 1 (Korean Patent Application Laid-Open No. 2007-0010723) proposes a technique for adsorbing a substrate and a mask with an electrostatic chuck.

Korean Patent Publication No. 2007-0010723

However, in the prior art, when the mask is adsorbed on the electrostatic chuck with the substrate interposed therebetween, there is a problem in that wrinkles remain on the mask after adsorption.

An object of the present invention is to satisfactorily adsorb both the first adsorbed body and the second adsorbed body to the electrostatic chuck.

An adsorption apparatus according to a first aspect of the present invention includes an adsorbed body support unit for supporting an adsorbed body, an electrostatic chuck installed on one side of the adsorbed body supporting unit for adsorbing the adsorbed body, the adsorbed body supporting unit and a distance adjusting means for adjusting the distance to the electrostatic chuck; and a control unit for controlling the adjustment of the distance between the adsorbed body support unit and the electrostatic chuck by applying a voltage to the electrostatic chuck and adjusting the distance by the distance adjusting means, The control unit controls the distance adjusting means such that a distance between the electrostatic chuck and the adsorbed body supporting unit is spaced apart by a predetermined interval, and the adsorbed body supporting unit and the electrostatic chuck are spaced apart from each other by a predetermined distance. , a voltage for sucking the adsorbed body supported by the adsorbed body supporting unit in a direction toward the electrostatic chuck is controlled to be applied to the electrostatic chuck.

A film forming apparatus according to a second aspect of the present invention includes a substrate supporting unit for supporting a substrate, a mask supporting unit installed on one side of the substrate supporting unit to support a mask, and the mask based on the substrate supporting unit. an electrostatic chuck installed on a side opposite to the support unit for adsorbing the mask with the substrate interposed therebetween; and distance adjusting means for adjusting a distance between the mask support unit and the electrostatic chuck; and a control unit for controlling adjustment of a distance between the mask supporting unit and the electrostatic chuck by applying a voltage and the distance adjusting means, wherein the control unit includes a distance between the electrostatic chuck and the mask supporting unit with the substrate interposed therebetween. control the distance adjusting means to have a predetermined interval, and a predetermined voltage for making the mask convex in a direction toward the electrostatic chuck in a state in which the electrostatic chuck and the mask supporting unit are spaced apart by the predetermined interval It is characterized in that it is controlled to be applied to the electrostatic chuck.

An adsorption method according to a third aspect of the present invention includes a suction step of applying a predetermined voltage to an electrostatic chuck spaced apart from an adsorption target by a predetermined distance, and sucking the adsorbed body in a direction toward the electrostatic chuck; and adsorbing the adsorbed body to the electrostatic chuck by bringing the adsorbed body and the electrostatic chuck relatively close to each other.

An adsorption method according to a fourth aspect of the present invention is a method for adsorbing an adsorbent, comprising: a first adsorption step of adsorbing a first adsorbed body by applying a first voltage to an electrostatic chuck; in a state in which the electrostatic chuck and the second adsorbent are spaced apart from each other by a predetermined distance, applying a predetermined voltage to the electrostatic chuck to convex the second adsorbent in a direction toward the electrostatic chuck; , a second adsorption step of adsorbing the second adsorbed body with the first adsorbed body interposed therebetween by bringing the second adsorbed body and the electrostatic chuck relatively close to each other from the predetermined distance; characterized.

An adsorption method according to a fifth aspect of the present invention is a method for adsorbing an adsorbent, comprising: a first applying step of applying a first voltage for adsorbing a first adsorbent to the electrostatic chuck to the electrostatic chuck; A first moving step of relatively moving the second adsorbed body and the electrostatic chuck so that the electrostatic chuck and the second adsorbed body are spaced apart by a predetermined distance with the first adsorbed body interposed therebetween; a second applying step of applying a predetermined voltage such that the second adsorbent becomes convex in a direction toward the electrostatic chuck while the electrostatic chuck and the second adsorbent are spaced apart from each other by a predetermined distance; and a second moving step of relatively moving the second adsorbed body and the electrostatic chuck so that the second adsorbed body is adsorbed to the electrostatic chuck beyond the first adsorbed body while a voltage is applied. .

A film formation method according to a sixth aspect of the present invention is a film formation method of depositing a deposition material on a substrate through a mask, comprising the steps of: loading the mask into a vacuum container; loading the substrate into the vacuum container; applying a first voltage to the substrate; convex in a direction toward the electrostatic chuck; and adsorbing the mask onto the electrostatic chuck over the substrate by relatively approaching the mask and the electrostatic chuck from the predetermined distance; and evaporating the deposition material while the mask is adsorbed to form a deposition material on the substrate through the mask.

A film forming method according to a seventh aspect of the present invention is a film forming method of forming a deposition material on a substrate through a mask, comprising the steps of: loading the mask into a vacuum container; loading the substrate into the vacuum container; a first applying step of applying a first voltage to the electrostatic chuck so as to be absorbed by the electrostatic chuck; a first moving step of moving the electrostatic chuck, and applying a predetermined voltage such that the mask becomes convex in a direction toward the electrostatic chuck while the electrostatic chuck and the mask are spaced apart by a predetermined distance with the substrate interposed therebetween a second applying step; a second moving step of relatively moving the mask and the electrostatic chuck so that the mask is adsorbed onto the electrostatic chuck beyond the substrate while the predetermined voltage is applied; and evaporating the deposition material while the substrate and the mask are adsorbed, and forming a deposition material on the substrate through the mask.

A method for manufacturing an electronic device according to an eighth aspect of the present invention is characterized in that the electronic device is manufactured using the film forming method according to the sixth or seventh aspect of the present invention.

According to the present invention, both the first adsorbed body and the second adsorbed body can be satisfactorily adsorbed without leaving wrinkles by the electrostatic chuck.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram of a part of the manufacturing apparatus of an electronic device.
2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
3A to 3C are conceptual views and schematic diagrams of an electrostatic chuck system according to an embodiment of the present invention.
4A to 4F are schematic diagrams showing a method for adsorbing a substrate and a mask to an electrostatic chuck.
It is a schematic diagram which shows an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are intended to limit the scope of the present invention to these unless specifically stated otherwise. not.

INDUSTRIAL APPLICABILITY The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film made of a polymer material, or a metal can be selected. For example, the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. Moreover, arbitrary materials, such as an organic material and a metallic material (metal, metal oxide, etc.), can be selected also as a vapor deposition material. In addition to the vacuum deposition apparatus described in the following description, the present invention can also be applied to a film forming apparatus including a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. The technique of this invention is specifically applicable to manufacturing apparatuses, such as an organic electronic device (For example, an organic light emitting element, a thin film solar cell), an optical member. Among them, an apparatus for manufacturing an organic light emitting device that forms an organic light emitting device by evaporating a vapor deposition material and depositing it on a substrate through a mask is one of preferred application examples of the present invention.

<Electronic device manufacturing apparatus>

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically the structure of a part of the manufacturing apparatus of an electronic device.

The manufacturing apparatus of FIG. 1 is used for manufacture of the display panel of the organic electroluminescent display for smartphones, for example. In the case of a display panel for a smartphone, for example, a substrate of the 4.5th generation (about 700 mm × about 900 mm), a full size of the 6th generation (about 1500 mm × about 1850 mm), or a half-cut size (about 1500 mm × After film formation for formation of an organic EL element is performed on a substrate having a thickness of about 925 mm, the substrate is cut out to produce a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay device connecting between the cluster apparatuses 1 .

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing a process (eg, film formation) on a substrate S, a plurality of mask stock apparatuses 12 for accommodating the masks M before and after use; A transfer chamber 13 disposed at the center thereof is provided. The transfer chamber 13 is connected to each of a plurality of film forming apparatuses 11 and a mask stock apparatus 12 as shown in FIG. 1 .

In the transfer chamber 13 , a transfer robot 14 that transfers a substrate and a mask is disposed. The transport robot 14 transports the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11 . In addition, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12 . The transfer robot 14 may be, for example, a robot having a structure in which a robot hand holding the substrate S or the mask M is mounted on an articulated arm.

In the film-forming apparatus 11 (also called a vapor deposition apparatus), the vapor deposition material accommodated in the vapor deposition source is heated by a heater, and evaporates, and is vapor-deposited on the board|substrate through a mask. The transfer of the substrate S with the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposition) ) and the like are performed by the film forming apparatus 11 .

In the mask stock apparatus 12 , a new mask and a used mask to be used in the film forming process in the film forming apparatus 11 are divided and stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to a cassette of the mask stock apparatus 12 , and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11 . return to

The cluster device 1 has a pass chamber 15 for transferring the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1 , and the cluster device 1 has a film forming process completed. A buffer chamber 16 for transferring the substrate S to another cluster device on the downstream side is connected. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side, and receives one of the film forming apparatuses 11 in the cluster apparatus 1 (eg, the film forming apparatus 11a). ) is returned to In addition, the transfer robot 14 receives the substrate S on which the film forming process in the cluster apparatus 1 has been completed from one of the plurality of film forming apparatuses 11 (eg, the film forming apparatus 11b), and is connected to the downstream side. It is transferred to the buffer chamber 16 .

Between the buffer chamber 16 and the pass chamber 15, a turning chamber 17 for changing the direction of the substrate is provided. In the turning chamber 17 , a transfer robot 18 for receiving the substrate S from the buffer chamber 16 , rotating the substrate S by 180 degrees, and transferring the substrate S to the pass chamber 15 is installed. Thereby, the direction of the substrate S becomes the same in the upstream cluster apparatus and the downstream cluster apparatus, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the vortex chamber 17 are so-called relay devices that connect between the cluster devices. , including at least one of the turning rooms.

The film forming apparatus 11 , the mask stock apparatus 12 , the transfer chamber 13 , the buffer chamber 16 , the swirl chamber 17 and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting element. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1 , but the present invention is not limited thereto, and other types of apparatuses or chambers may be provided, and arrangements between these apparatuses or chambers may vary. have.

Hereinafter, the specific structure of the film-forming apparatus 11 is demonstrated.

<Film forming device>

2 is a schematic diagram showing the configuration of the film forming apparatus 11 . In the following description, an XYZ rectangular coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction, and the long side direction (the direction parallel to the long side) of the substrate S is the Y direction. do it with In addition, the rotation angle around the Z axis is expressed as "θ".

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21 , and a mask support unit 23 , , an electrostatic chuck 24 , and an evaporation source 25 .

The substrate holding unit 22 receives and holds the substrate S conveyed by the transfer robot 14 installed in the transfer chamber 13 , and is also called a substrate holder.

A mask support unit 23 is installed under the substrate support unit 22 . The mask holding unit 23 is a means for receiving and holding the mask M transported by the transport robot 14 installed in the transport chamber 13 , and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23 . In particular, a mask used for manufacturing an organic EL device for a smartphone is a metal mask having a fine opening pattern formed therein, and is also called a Fine Metal Mask (FMM).

An electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is installed above the substrate support unit 22 . The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rabeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. By using the electrostatic chuck 24 as a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily absorbed by the electrostatic chuck 24 . For example, in the case where the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, the metal is transferred to the adsorbed body such as the substrate S through the dielectric matrix. A polarized charge opposite to the electrode is induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by an electrostatic attraction therebetween.

The electrostatic chuck 24 may be formed as a single plate or may have a plurality of sub-plates. In addition, even when it is formed of one plate, it is also possible to include a plurality of electric circuits therein, so that the electrostatic force can be controlled to be different depending on the position in one plate.

In this embodiment, as will be described later, not only the substrate S (first adsorbed body) but also the mask (M, second adsorbed body) is adsorbed and held by the electrostatic chuck 24 before film formation.

That is, in the present embodiment, the substrate S (first adsorbed body) placed on the lower side of the electrostatic chuck 24 in the vertical direction is sucked and held by the electrostatic chuck 24 , and thereafter, the substrate S (first adsorbed body) is held thereafter. The mask M (second adsorbed body) placed on the opposite side of the electrostatic chuck 24 with the adsorbed body) interposed therebetween is adsorbed and held by the electrostatic chuck 24 over the substrate S (first adsorbed body). In particular, when the substrate S is adsorbed by the electrostatic chuck 24 and/or when the mask M is adsorbed over the substrate S, the electrostatic chuck 24 and the substrate S or the mask M are The substrate S or the mask M is pulled by applying a predetermined voltage to the electrostatic chuck 24 while being spaced apart by a predetermined interval, and the substrate is convex upward by the electrostatic force of the electrostatic chuck 24 . (S) or the part of the mask M is made to become the starting point of adsorption|suction of the board|substrate S or the mask M by an electrostatic chuck. This will be described later with reference to FIGS. 3 and 4 .

Although not shown in FIG. 2 , by providing a cooling mechanism (eg, a cooling plate) for suppressing the temperature rise of the substrate S on the opposite side to the adsorption surface of the electrostatic chuck 24 , organic substances deposited on the substrate S are provided. It is good also as a structure which suppresses the quality change and deterioration of a material.

The deposition source 25 includes a crucible (not shown) in which the deposition material to be formed on the substrate is accommodated, a heater (not shown) for heating the crucible, and the deposition material scatters to the substrate until the evaporation rate from the deposition source becomes constant. and a shutter (not shown) that blocks the screen. The deposition source 25 may have various configurations according to uses, such as a point deposition source or a linear deposition source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring a film thickness deposited on a substrate.

A substrate Z actuator 26 , a mask Z actuator 27 , an electrostatic chuck Z actuator 28 , a positioning mechanism 29 , and the like are provided on the upper outer side (atmospheric side) of the vacuum vessel 21 . These actuators 26, 27, 28, distance adjusting means and the position adjusting mechanism 29 are, for example, composed of a motor and a ball screw, or a motor and a linear guide, etc., but the present invention is not limited thereto. Other known configurations may be employed. The substrate Z actuator 26 is a driving means for elevating (moving in the Z direction) the substrate supporting unit 22 . The mask Z actuator 27 is a driving means for raising/lowering the mask support unit 23 (moving in the Z direction). The electrostatic chuck Z actuator 28 is a driving means for lifting (moving in the Z direction) the electrostatic chuck 24 .

The positioning mechanism 29 is a driving means for alignment of the electrostatic chuck 24 . The positioning mechanism 29 rotates the entire electrostatic chuck 24 with respect to the substrate support unit 22 and the mask support unit 23 in the X-direction, the Y-direction, and θ. In the present embodiment, alignment is performed to adjust the relative positions of the substrate S and the mask M by positioning the electrostatic chuck 24 in the XYθ direction while the substrate S is adsorbed.

On the outer upper surface of the vacuum container 21, in addition to the driving mechanism described above, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20) may be installed. In the present embodiment, the alignment camera 20 is provided at a position corresponding to the diagonal of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to four corners of the rectangle. You can do it.

The camera 20 for alignment provided in the film forming apparatus 11 of this embodiment is a camera for fine alignment used for adjusting the relative position of the board|substrate S and the mask M with high precision, The viewing angle is narrow, It is a high-resolution camera. In addition to the camera 20 for fine alignment, the film-forming apparatus 11 may include the camera for rough alignment with a relatively wide viewing angle and low resolution.

The position adjustment mechanism 29 is based on the positional information of the board|substrate S, 1st to-be-adsorbed body, and the mask M, 2nd to-be-adsorbed body acquired with the camera 20 for alignment, the board|substrate S, 1st to-be-adsorbed body. ) and the mask (M, 2nd to-be-adsorbed body) are moved relatively, and alignment which adjusts a position is performed.

The film forming apparatus 11 includes a control unit 40 . The control part 40 has functions, such as control of conveyance and alignment of the board|substrate S and the mask M, control of the vapor deposition source 25, control of film formation.

In particular, the control unit 40 controls the elevation of the substrate support unit 22 by the substrate Z actuator 26 , the elevation of the mask support unit 23 by the mask Z actuator 27 , and the elevation of the mask support unit 23 by the electrostatic chuck Z actuator 28 . The elevation of the electrostatic chuck 24 is controlled. Accordingly, the controller 40 controls the substrate for the electrostatic chuck 24 in the process of adsorption of the substrate S and the mask M to the electrostatic chuck 24 and the process of separating the adsorbed substrate S and the mask M. The relative distance of (S) and/or the mask (M) can be adjusted.

In particular, in order to adsorb the mask M to the electrostatic chuck 24 with the substrate S or the substrate S interposed therebetween, the controller 40 controls the electrostatic chuck 24 and the substrate S or the mask M. Elevation of the electrostatic chuck 24 and/or the substrate S, or the elevation of the electrostatic chuck 24 and/or the mask M is primarily controlled so that the electrostatic chuck 24 and/or the substrate S are separated by a predetermined interval, and then The substrate S or the mask M is convex in a direction toward the electrostatic chuck 24 by electrostatic attraction generated by applying a predetermined voltage. Thereafter, the electrostatic chuck 24 and/or the substrate S are raised or lowered so that the substrate S or the mask M is in contact with the electrostatic chuck 24 or the substrate S or the electrostatic chuck 24 and/or the mask. Secondary control of lifting and lowering of (M). This function of the control unit 40 may be implemented by a separate Z actuator control unit (not shown).

The controller 40 may also have a function of controlling the application of a voltage to the electrostatic chuck 24 , which will be described later with reference to FIG. 3 .

The control unit 40 is configurable by a computer having, for example, a processor, memory, storage, I/O, and the like. In this case, the function of the control unit 40 is realized by the processor executing the program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, an embedded computer or a programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the control unit may be configured by circuits such as ASICs or FPGAs. Moreover, a control part may be provided for each film-forming apparatus, and it may be comprised by one control part controlling a plurality of film-forming apparatuses.

<Electrostatic chuck system>

An electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A to 3C .

3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic cross-sectional view of the electrostatic chuck 24 , and FIG. 3C is a schematic plan view of the electrostatic chuck 24 .

The electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24 , a voltage application unit 31 , and a voltage control unit 32 , as shown in FIG. 3A .

The voltage applying unit 31 applies a voltage for generating an electrostatic attraction to the electrode portion of the electrostatic chuck 24 .

The voltage controller 32 is configured to control a level of a voltage applied to the electrode from the voltage applying unit 31 and a start time of voltage application according to the adsorption process of the electrostatic chuck system 30 or the deposition process of the film forming apparatus 11 . , voltage holding time, voltage application sequence, etc. are controlled. For example, the voltage controller 32 may independently control voltage application to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the voltage control unit 32 is implemented separately from the control unit 40 of the film forming apparatus 11 , but the present invention is not limited thereto, and may be integrated into the control unit 40 of the film forming apparatus 11 .

The electrostatic chuck 24 includes an electrode unit that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (eg, the substrate S and the mask M) on the adsorption surface, and the electrode unit includes a plurality of sub-electrode units 241 to 249 . may include. For example, as shown in FIG. 3C , the electrostatic chuck 24 of the present embodiment has a direction parallel to a long side of the electrostatic chuck 24 (Y direction) and/or a direction parallel to a short side of the electrostatic chuck 24 . It includes a plurality of sub-electrode units 241 to 249 divided along (X direction).

Each sub-electrode unit includes an electrode pair 33 to which positive (first polarity) and negative (second polarity) potentials are applied to generate electrostatic attraction force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 have a comb shape, respectively, as shown in FIG. 3C . For example, the first electrode 331 and the second electrode 332 each have a plurality of comb portions and a base to which the plurality of comb portions are connected. The base of each electrode 331 and 332 supplies an electric potential to a plurality of comb teeth, and the plurality of comb teeth generates an electrostatic attraction force between it and an adsorbed body. In one sub-electrode part, each of the comb portions of the first electrode 331 is alternately disposed to face each of the comb portions of the second electrode 332 . In this way, by configuring each of the comb portions of the electrodes 331 and 332 to face each other and to be entangled with each other, the gap between the electrodes to which different potentials are applied can be narrowed, a large unequal electric field is formed, and the gradient force causes the substrate (S) can adsorb.

In the present embodiment, it has been described that the electrodes 331 and 332 of the sub-electrode units 241 to 249 of the electrostatic chuck 24 have a comb shape, but the present invention is not limited thereto. As long as it is capable of generating electrostatic attraction, it may have various shapes.

The electrostatic chuck 24 of the present embodiment has a plurality of adsorption portions corresponding to the plurality of sub-electrode portions. For example, the electrostatic chuck 24 of the present embodiment may have nine adsorption parts corresponding to the nine sub-electrode parts 241 to 249 as shown in FIG. 3C , but is not limited thereto, and the substrate S ), in order to more precisely control the adsorption of the adsorption unit may have a different number of adsorption units.

The adsorption unit may be installed to be divided in the long side direction (Y-axis direction) and the short side direction (X-axis direction) of the electrostatic chuck 24 , but is not limited thereto, and is divided only in the long side direction or the short side direction of the electrostatic chuck 24 . it might be The plurality of adsorption units may be implemented by a physically single plate having a plurality of electrode parts, or by having each of a plurality of physically divided plates having one or more electrode parts.

In the embodiment shown in FIG. 3C , each of the plurality of adsorption units may be implemented to correspond to each of the plurality of sub-electrode units, but one adsorption unit may be implemented to include a plurality of sub-electrode units.

For example, by controlling the application of voltage to the sub-electrode units 241 to 249 by the voltage control unit 32, as will be described later, the direction (Y direction) intersecting the adsorption proceeding direction (X direction) of the substrate S The three sub-electrode units 241 , 244 , and 247 arranged as . That is, each of the three sub-electrode units 241 , 244 , and 247 can be independently voltage controlled, but by controlling the voltage to be applied to the three sub-electrode units 241 , 244 , and 247 at the same time, these three sub-electrodes The electrode portions 241 , 244 , and 247 can function as one adsorption portion. As long as the substrate can be adsorbed independently to each of the plurality of adsorption units, its specific physical structure and electrical circuit structure may be different.

<Adsorption method by electrostatic chuck system>

Hereinafter, a method of adsorbing the substrate S and the mask M to the electrostatic chuck 24 will be described with reference to FIGS. 4A to 4E . Hereinafter, the function of the voltage control unit 32 will be described on the premise that it is separate from the function of the control unit 40 of the film forming apparatus 11, but this is exemplary and the function of the voltage control unit 32 to be described later is the film forming apparatus ( 11) may be integrated into the control unit 40 .

FIG. 4A shows a process for adsorbing the substrate S to the electrostatic chuck 24 (a first adsorption step).

In the present embodiment, as shown in FIG. 4A , the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24 , but from one end to the other end along the first side (short side) of the electrostatic chuck 24 . adsorption proceeds sequentially toward However, the present invention is not limited thereto, and for example, the substrate may be adsorbed from any one diagonal edge of the electrostatic chuck 24 toward another opposite edge thereof.

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24 , the order of applying the first voltage for adsorption of the substrate to the plurality of sub-electrode units 241 to 249 may be controlled. , a first voltage is simultaneously applied to the plurality of sub-electrodes, but the structure or support force of the support part of the substrate support unit 22 supporting the substrate S may be different.

FIG. 4A illustrates an embodiment in which the substrate S is sequentially adsorbed to the electrostatic chuck 24 by controlling the voltages applied to the plurality of sub-electrode units 241 to 249 of the electrostatic chuck 24 . Here, the three sub-electrode units 241 , 244 , and 247 disposed along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption unit 41 , and a central portion of the electrostatic chuck 24 is formed. The three sub-electrode units 242 , 245 , and 248 form the second adsorption unit 42 , and the remaining three sub-electrode units 243 , 246 , 249 form the third adsorption unit 43 .

First, as shown in FIG. 4A , the substrate S is loaded into the vacuum container 21 of the film forming apparatus 11 and supported by the support of the substrate support unit 22 .

Subsequently, the electrostatic chuck 24 is lowered by the control of the electrostatic chuck Z actuator 28 by the controller 40 to move toward the substrate S supported by the support of the substrate support unit 22 . Alternatively, the substrate support unit 22 may be raised by controlling the substrate Z actuator 26 by the controller 40, or the electrostatic chuck Z actuator 28 and the substrate Z actuator 26 may be controlled together to control the electrostatic chuck. (24) and the substrate (S) may be relatively approached.

When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the voltage control unit 32 moves from the first suction unit 41 to the third suction unit along the first side (short side) of the electrostatic chuck 24 . Control is performed so that the first voltage ΔV1 is sequentially applied toward (43).

That is, as shown in FIG. 4A , the first voltage is first applied to the first adsorption unit 41 , and then the first voltage is applied to the second adsorption unit 42 , and finally the third adsorption unit ( 43) is controlled so that the first voltage is applied.

The first voltage [Delta]V1 is set to a voltage of sufficient magnitude to surely adsorb the substrate S to the electrostatic chuck 24 .

As a result, the substrate S is adsorbed to the electrostatic chuck 24 from the side corresponding to the first adsorption part 41 of the substrate S, through the central part of the substrate S, and toward the third adsorption part 43 side. (ie, adsorption of the substrate S proceeds in the X direction), the substrate S may be adsorbed to the electrostatic chuck 24 in a flat manner without leaving wrinkles in the center of the substrate.

In the present embodiment, it has been described that the first voltage ΔV1 is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S. However, the electrostatic chuck 24 starts to descend toward the substrate S. The first voltage ?V1 may be applied before or during the fall.

4B shows a substrate adsorption process according to another embodiment of the present invention. In another embodiment of the present invention shown in FIG. 4B , before applying the first voltage ΔV1 for adsorbing the substrate S to the electrostatic chuck 24 , the substrate S is removed from the electrostatic chuck 24 by a predetermined value. The electrostatic chuck 24 and the substrate S are relatively moved by the substrate Z actuator 26 and/or the electrostatic chuck Z actuator 28 (by the distance adjusting means) so as to be spaced apart by the distance d of .

Here, the 'distance between the electrostatic chuck 24 and the substrate S' is the distance between the suction surface, which is the lower surface of the electrostatic chuck 24 , and the upper surface of the substrate support unit 22 , as shown in FIG. 4B . Defined. Accordingly, the distance between the electrostatic chuck 24 and the substrate S can be defined regardless of the shape of the substrate S supported by the substrate support unit 22 .

According to the present embodiment, the 'predetermined interval d' is a spaced apart from the electrostatic chuck 24 by a predetermined interval d by an electrostatic force generated according to a voltage applied to the electrostatic chuck 24 . It is a distance at which the substrate S can be deformed into a convex shape in a direction toward the electrostatic chuck 24 .

In addition, the predetermined interval d is when the first voltage ΔV1 is applied to the electrode portion of the electrostatic chuck 24 so that the substrate S has a convex shape in the direction toward the electrostatic chuck 24 . (S) is a distance that does not contact the electrostatic chuck 24 . If the predetermined distance d is too small, when the first voltage ΔV1 is applied to deform the substrate S to a convex shape toward the electrostatic chuck 24, the central portion of the substrate S is not the central portion. The portion between the periphery and the periphery comes into contact with the electrostatic chuck 24 before the central portion.

For example, the 'predetermined distance (d)' is preferably equal to or greater than the amount of warpage (x) of the substrate (S) indicating the amount of bending of the substrate (S) supported by the substrate support unit (22) due to its own weight. . Here, the warpage amount x of the substrate S refers to the maximum distance x from the horizontal plane of the substrate S when the substrate S sags by its own weight and becomes concave.

However, if the distance between the electrostatic chuck 24 and the substrate S is too large, there is a problem in that a relatively large voltage must be applied in order for the substrate S to have a convex shape toward the electrostatic chuck 24 . Considering this, it is preferable that the 'predetermined distance (d)' is substantially equal to the amount of warpage (x) of the substrate.

When the distance between the substrate S and the electrostatic chuck 24 or the distance between the substrate support unit 22 and the electrostatic chuck 24 is maintained at a predetermined distance d, the electrode portion of the electrostatic chuck 24 is removed. 1 voltage (ΔV1) is applied. Then, the substrate S has a convex shape in the direction toward the electrostatic chuck 24 by the electrostatic force from the electrostatic chuck 24 .

Then, when the electrostatic chuck 24 and the substrate S are relatively brought closer to each other, the central portion of the substrate S first contacts the electrostatic chuck 24 and is sucked. When the electrostatic chuck 24 and the substrate S are brought closer to each other, the substrate S is sequentially attracted from the central portion of the substrate S toward the peripheral portion. Accordingly, the substrate S can be flatly adsorbed to the electrostatic chuck 24 .

In the embodiment shown in FIG. 4B , in a state in which the electrostatic chuck 24 and the substrate S are spaced apart from each other by a predetermined distance d, the first voltage is the voltage for adsorbing the substrate S to the electrostatic chuck 24 . Although it has been described that a voltage is applied, the present invention is not limited thereto, and a predetermined voltage lower than the first voltage may be applied as long as the substrate S can have a convex shape. In this case, after the substrate S has a convex shape by a predetermined voltage, during the process of relatively bringing the electrostatic chuck 24 and the substrate S closer to each other, or the central portion of the substrate S is attached to the electrostatic chuck 24 . The voltage applied to the electrostatic chuck 24 in the contact state may be changed from a predetermined voltage to the first voltage ΔV1.

In addition, in the embodiment shown in FIG. 4B , it is illustrated that the first voltage ΔV1 or a predetermined voltage applied to make the substrate S have a convex shape is simultaneously applied to the entire electrode portion of the electrostatic chuck 24 . , the present invention is not limited thereto, and as long as the substrate S can have a convex shape by the first voltage ΔV1 or a predetermined voltage applied to the electrostatic chuck 24 , the sub-electrode of the electrostatic chuck 24 . The voltage may be sequentially applied to each unit or to each adsorption unit. For example, the voltage may be first applied to the second suction unit of the electrostatic chuck 24 and then the voltage may be applied to the first and third suction units.

According to the embodiment shown in FIG. 4A or the embodiment shown in FIG. 4B , at a predetermined time point after the adsorption process (first adsorption step) of the substrate S to the electrostatic chuck 24 is completed, the voltage controller 32 . as shown in FIG. 4C , lowers the voltage applied to the electrode portion of the electrostatic chuck 24 from the first voltage ΔV1 to the second voltage ΔV2 having a smaller magnitude than the first voltage ΔV1 .

The second voltage ΔV2 is an adsorption holding voltage for holding the substrate S in a state in which it is adsorbed to the electrostatic chuck 24 , and is a first voltage ( It is a voltage with a magnitude smaller than ΔV1). When the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2, the amount of polarized charge induced in the substrate S in response thereto is also shown in FIG. 4C, when the first voltage ΔV1 is applied. Although it is decreased compared to the case where the substrate S is once adsorbed to the electrostatic chuck 24 by the first voltage ΔV1, the substrate is adsorbed even if a second voltage ΔV2 lower than the first voltage ΔV1 is applied. state can be maintained.

As such, by lowering the voltage applied to the electrode portion of the electrostatic chuck 24 to the second voltage ΔV2 , the time required to separate the substrate from the electrostatic chuck 24 may be shortened.

That is, when the substrate S is separated from the electrostatic chuck 24 , even if the voltage applied to the electrode portion of the electrostatic chuck 24 is zero (0), the electrostatic chuck 24 and the substrate S are It takes a considerable amount of time (sometimes about several minutes) for the charge induced at the interface between the electrostatic chuck 24 and the substrate S to disappear rather than the electrostatic attraction therebetween. In particular, when the substrate S is adsorbed to the electrostatic chuck 24 , the first voltage is set so that an electrostatic force sufficiently greater than the minimum electrostatic force required to adsorb the substrate to the electrostatic chuck 24 is normally applied to ensure the adsorption. However, it takes a considerable amount of time for the substrate to be separated from the first voltage.

In the present embodiment, in order to prevent the overall process time Tact from increasing due to the time required for the separation of the substrate S from the electrostatic chuck 24 , after the substrate S is adsorbed to the electrostatic chuck 24 , Then, the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage at a predetermined time point.

In the embodiment shown in FIG. 4C , the voltage applied to the first adsorption unit 41 to the third adsorption unit 43 of the electrostatic chuck 24 is simultaneously lowered to the second voltage, but the present invention is limited thereto. The time of lowering to the second voltage or the magnitude of the applied second voltage may be different for each adsorption unit. For example, you may lower|reduce to a 2nd voltage sequentially toward the 3rd adsorption|suction part 43 from the 1st adsorption|suction part 41.

In this way, after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage, the control unit 40 controls the positioning mechanism 29 to control the substrate S adsorbed to the electrostatic chuck 24 . ) and the relative positions of the mask M supported by the mask support unit 23 are adjusted (aligned). In the present embodiment, it has been described that the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage. Without limitation, the alignment process may be performed while the first voltage is applied to the electrode portion of the electrostatic chuck 24 .

Then, in a state in which the second voltage is continuously applied to the electrode portion of the electrostatic chuck 24 , the electrostatic chuck Z actuator 28 and/or the mask Z actuator 27 are controlled by the control unit 40 . The distance between the electrostatic chuck 24 and the mask M is made to have a predetermined distance d by relatively moving the 24 and the mask support unit 23 . That is, according to the present invention, in the process of adsorbing the mask M to the electrostatic chuck 24 with the substrate S interposed therebetween, the mask M does not directly contact the lower surface of the substrate S, but first The electrostatic chuck 24 and the mask M are spaced apart from each other with a predetermined distance d.

Here, the 'distance between the electrostatic chuck 24 and the mask M' is the distance between the suction surface that is the lower surface of the electrostatic chuck 24 and the upper surface of the mask support unit M, as shown in FIG. 4D . Defined. Accordingly, the distance between the electrostatic chuck 24 and the mask M can be defined regardless of the shape of the mask M supported by the mask support unit 23 . In addition, since the mask M has a relatively thin thickness, the thickness of the mask M itself at a distance between the electrostatic chuck 24 and the mask M may be neglected.

According to the embodiment of the present invention, the 'predetermined interval d' corresponding to the distance between the electrostatic chuck 24 and the mask M is an electrostatic chuck 24 generated in response to the application of a predetermined voltage. The distance is such that the mask M, which is spaced apart from the electrostatic chuck 24 by a predetermined distance d, can be deformed into a convex shape in a direction toward the electrostatic chuck 24 by an attractive force. The predetermined voltage may be a third voltage, which is a voltage applied to attract the mask M to the electrostatic chuck 24 with the substrate S interposed therebetween, but is not limited thereto, as will be described later.

In addition, at the predetermined interval d, when the predetermined voltage is applied and the mask M has a convex shape toward the electrostatic chuck 24 , the convex portion of the mask M is attracted to the electrostatic chuck 24 . It is a distance which does not contact with the board|substrate S which became. If the predetermined distance d is too small, when the predetermined voltage is applied to cause the mask M to be deformed to have a convex shape toward the electrostatic chuck 24, other parts of the mask M (eg, the central portion) The portion between the central portion and the peripheral portion), which is not , comes into contact with the substrate S before the central portion.

For example, the 'predetermined gap (d)' is the thickness of the substrate S and the amount of deflection x of the mask indicating the extent to which the mask M supported by the mask support unit 23 is bent due to its own weight. It is preferable to be more than the sum of the distances. The thickness of the substrate S may be about 0.5 mm or more or thinner. And the bending amount (x) of a mask points out the maximum distance (x) from the horizontal plane of the mask (M), when a mask sags by its own weight and becomes a concave shape.

However, if the distance between the electrostatic chuck 24 and the mask M is too large, there is a problem in that a relatively large voltage must be applied in order for the mask M to have a convex shape toward the electrostatic chuck 24 . In consideration of this, it is preferable that the 'predetermined distance (d)' is substantially equal to the sum of the amount of warpage (x) of the mask and the thickness of the substrate (S).

In order to relatively primary approach the electrostatic chuck 24 and the mask support unit 23 , for example, as shown in FIG. 4D , the electrostatic chuck Z actuator 28 is controlled by the control unit 40 to obtain an electrostatic The chuck 24 may be lowered toward the mask M, or the mask M may be raised toward the substrate S adsorbed to the electrostatic chuck 24 through the control of the mask support unit M by the controller 40 . Alternatively, the control unit 40 may control the electrostatic chuck Z actuator 28 and the mask Z actuator 27 together so that the electrostatic chuck 24 and the mask support unit 23 are relatively close to each other.

Subsequently, as shown in FIG. 4E , in a state where the distance between the electrostatic chuck 24 and the mask M is maintained at a predetermined distance d, the voltage controller 32 controls the electrode part of the electrostatic chuck 24 . control so that a predetermined voltage is applied to the When a predetermined voltage is applied to the electrostatic chuck 24 , the mask M is pulled upward by an electrostatic force applied to the mask M spaced apart from the electrostatic chuck 24 by a predetermined distance d. (Aspiration step).

As a result, the central portion of the mask M protrudes upward and has a convex shape, thereby forming a starting point for adsorption of the mask M to the electrostatic chuck 24 to be performed later.

The predetermined voltage is larger than the second voltage ΔV2, and preferably has a size that allows the mask M to be charged by electrostatic induction with the substrate S interposed therebetween. Accordingly, the mask M spaced apart from the electrostatic chuck 24 by a predetermined distance d becomes convex in a direction toward the electrostatic chuck 24 with the substrate S interposed therebetween. In this case, the 'predetermined interval (d)' is set to be greater than the limit distance at which the electrostatic attraction force due to the suction and hold voltage (second voltage, ΔV2) applied to the electrostatic chuck 24 does not act on the mask M. However, the present invention is not limited thereto.

For example, the predetermined voltage may be a voltage of a magnitude for adsorbing the mask M to the electrostatic chuck 24 with the substrate S interposed therebetween, that is, the third voltage ΔV3 . In this case, since there is no need to change the voltage from the predetermined voltage to the third voltage ΔV3 in the subsequent process, voltage control is simplified.

However, the present invention is not limited thereto, and the predetermined voltage may have the same magnitude as the second voltage ΔV2. Even if the predetermined voltage has the same magnitude as the second voltage ΔV2 , the distance between the electrostatic chuck 24 and the mask M increases the electrostatic attraction force due to the second voltage ΔV2 applied to the electrostatic chuck 24 . If the distance is smaller than the limit distance that does not act on the mask M, the mask M may be attracted by the electrostatic force from the electrostatic chuck 24 to have a convex shape in a direction toward the electrostatic chuck 24 .

The predetermined voltage may be made smaller than the first voltage ΔV1, or may have a magnitude equal to the first voltage ΔV1 in consideration of the shortening of the process time Tact.

In the suction step, the voltage controller 32 may control a predetermined voltage to be simultaneously applied across the electrostatic chuck 24 . Since the mask M is supported by the mask support unit 23 while being clamped with at least both sides (eg, the long side) ends taut outwardly, a predetermined predetermined amount applied to the entire electrostatic chuck 24 at the same time. Even if the electrostatic force generated by the voltage is applied to the entire mask M, the central portion, where the tension is relatively small, protrudes in the direction of the electrostatic chuck 24, rather than the peripheral portion, where the tension is large. However, the voltage controller 32 applies a predetermined voltage to only a portion of the electrostatic chuck 24 , for example, to the central portion, not to the periphery, and maintains the second voltage as it is for the remaining portion or first applies the second voltage to the central portion and then the remaining portion. may be controlled to be sequentially applied.

Subsequently, as shown in FIG. 4F , the mask M is sequentially adsorbed from the center to the periphery by the electrostatic chuck 24 with the substrate S interposed therebetween (second adsorption step). To this end, in a state in which the predetermined voltage, for example, a third voltage is applied, the electrostatic chuck 24 is controlled by the control unit 40 to drive the electrostatic chuck Z actuator 28 and/or the mask Z actuator 27 . and the mask support unit 23 are relatively approached secondarily so that the mask M is in contact with the lower surface of the substrate S.

When the electrostatic chuck 24 and the mask support unit 23 are relatively approached from a predetermined distance d in the second adsorption step, the central portion of the mask M protruding in the above-described sucking step is first attached to the substrate S. It comes into contact with the lower surface and starts to be absorbed by the electrostatic chuck 24 . And adsorption advances sequentially from the center part of the mask M toward the peripheral part at least in both directions. As a result, the mask M can be adsorbed with the substrate S interposed therebetween without leaving wrinkles at least in the central portion of the mask M.

When the predetermined voltage is different from the third voltage for adsorbing the mask M to the electrostatic chuck M with the substrate S interposed therebetween, the voltage controller 32 controls the electrostatic chuck 24 in the second adsorption step. ) to control the third voltage to be applied. For example, the voltage controller 32 may change the voltage applied to the electrostatic chuck 24 from the predetermined voltage to the third voltage while the electrostatic chuck 24 and the mask supporting unit 23 are relatively approached. Alternatively, the voltage applied to the electrostatic chuck 24 may be changed from the predetermined voltage to the third voltage after the electrostatic chuck 24 and the mask supporting unit 23 are relatively brought close to each other.

In order to make the electrostatic chuck 24 and the mask support unit 23 relatively secondary to each other, the electrostatic chuck 24 is lowered toward the mask M through the control of the electrostatic chuck Z actuator 28 by the controller 40 . can make it Alternatively, the mask M may rise toward the substrate S adsorbed on the electrostatic chuck 24 through the control of the mask support unit M by the controller 40 , or the controller 40 may control the electrostatic chuck Z The actuator 28 and the mask Z actuator 27 may be controlled together so that the electrostatic chuck 24 and the mask support unit 23 are relatively approached.

According to one embodiment of the present invention described above, in the mask adsorption process of adsorbing the mask M to the electrostatic chuck 24 with the substrate S interposed therebetween, the electrostatic chuck 24 and the mask M are The mask M protrudes in the direction toward the electrostatic chuck 24 by an electrostatic force generated by applying a predetermined voltage for adsorption of the mask to the electrostatic chuck 24 while being spaced apart with a gap d. , to form the origin of mask adsorption. Then, the mask M and the electrostatic chuck 24 are relatively approached so that the mask M is in contact with the electrostatic chuck 24 , so that the mask is sequentially adsorbed from the formed adsorption origin. Accordingly, the mask M can be adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween so that no wrinkles remain.

However, the present invention is not limited thereto, and in the case of adsorbing the mask M with the substrate S interposed between the electrostatic chuck 24 , similarly to the method illustrated in FIG. 4A , one side of the mask M is You may advance adsorption|suction toward the other side from the side. For example, according to an embodiment of the present invention, when the substrate S is adsorbed to the electrostatic chuck 24, the substrate S is adsorbed by the method shown in FIG. 4B, and the mask M is placed therebetween by the electrostatic chuck 24. When adsorbing to the chuck 24, mask adsorption can be performed similarly to the method shown in FIG. 4A.

<Film forming process>

Hereinafter, a film-forming method employing the adsorption method according to the present embodiment will be described.

In a state where the mask M is placed on the mask holding unit 23 in the vacuum container 21 , the substrate is moved into the vacuum container 21 of the film forming apparatus 11 by the transfer robot 14 of the transfer chamber 13 . are brought in

The hand of the transport robot 14 that has entered the vacuum container 21 places the substrate S on the support of the substrate support unit 22 .

Then, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or comes into contact with the substrate S, a first voltage ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. .

In one embodiment of the present invention, the voltage applied to the electrostatic chuck 24 is removed after adsorption of the substrate to the electrostatic chuck 24 is completed in order to maximize the time required to separate the substrate from the electrostatic chuck 24 . The voltage is lowered from the first voltage ΔV1 to the second voltage ΔV2. Even if the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2, it takes time until the polarized charge induced in the substrate by the first voltage ΔV1 is discharged. 24) can maintain the state of adsorption to the substrate.

In a state in which the substrate S is adsorbed to the electrostatic chuck 24 , the substrate S is lowered toward the mask M in order to measure the relative displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off from the electrostatic chuck 24 during the lowering process of the substrate adsorbed to the electrostatic chuck 24, after the lowering process of the substrate is completed (that is, to be described later) Immediately before the alignment process is started), the voltage applied to the electrostatic chuck 24 may be lowered to the second voltage ΔV2 .

When the board|substrate S descends to a measurement position, the alignment mark formed in the board|substrate S and the mask M is image|photographed with the camera 20 for alignment, and the relative position shift of a board|substrate and a mask is measured. In another embodiment of the present invention, the voltage applied to the electrostatic chuck 24 is applied to the electrostatic chuck 24 after the measurement process for alignment is completed (during the alignment process) in order to further increase the precision of the measurement process of the relative positions of the substrate and the mask. lower the voltage By photographing the alignment marks between the substrate and the mask in a state in which the substrate is strongly attracted to the electrostatic chuck 24 by the first voltage ?V1 (the substrate is held more flat), the precision of the measurement process can be improved.

As a result of the measurement, when it is determined that the displacement of the substrate relative to the mask exceeds the threshold, the substrate S adsorbed to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to position the substrate with respect to the mask. Adjust (align). In another embodiment of the present invention, after the positioning process is completed, the voltage applied to the electrostatic chuck 24 may be lowered to the second voltage ΔV2 . Through this, it is possible to further increase the precision throughout the alignment process (relative position measurement and position adjustment).

After the alignment process, the electrostatic chuck 24 is lowered toward the mask M so that the distance between the electrostatic chuck 24 and the mask M becomes a predetermined distance d. In a state in which the electrostatic chuck 24 and the mask M are spaced apart by a predetermined distance d, the second voltage applied to the electrostatic chuck 24 does not charge the mask M, so that the electrostatic force is substantially generated by the mask M. does not work on

In this state, a predetermined voltage greater than the second voltage, for example, a third voltage is applied to the electrostatic chuck 24 . When the third voltage is applied to the electrostatic chuck 24 , the mask M is pulled upward by the electrostatic force generated therefrom. As a result, not the periphery of the mask M on which the tension acts large, but the central part on which the tension acts relatively small protrudes upward and becomes a convex shape. Thereby, the starting point of mask adsorption|suction is formed.

With the third voltage applied to the electrostatic chuck 24 , the electrostatic chuck 24 is lowered toward the mask M and/or the mask M is raised toward the electrostatic chuck 24 to raise the mask M ) is brought into contact with the lower surface of the substrate S adsorbed to the electrostatic chuck 24 . In this process, the central portion of the mask M first contacts the substrate S to initiate adsorption, and from there, adsorption is sequentially performed toward the periphery of the mask M. As a result, the mask M is adsorbed to the electrostatic chuck 24 without leaving any wrinkles.

After the mask M adsorption process is completed, the voltage applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is a voltage capable of maintaining the state in which the substrate and the mask are adsorbed to the electrostatic chuck 24 , It is lowered to the fourth voltage ΔV4. Through this, it is possible to shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process is completed.

Then, the shutter of the deposition source 25 is opened and the deposition material is deposited on the substrate S through a mask.

After depositing to a desired thickness, the mask M is separated by lowering the voltage applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 to a fifth voltage ΔV5, and only the substrate is adsorbed to the electrostatic chuck 24 . In this state, the substrate is raised by the electrostatic chuck Z actuator 28 . Here, the fifth voltage ΔV5 is a size for maintaining the state in which the mask M is separated and only the substrate S is adsorbed to the electrostatic chuck 24 , and is substantially the same as the second voltage.

Then, the hand of the transport robot 14 enters the vacuum container 21 of the film forming apparatus 11 , and a voltage of zero (0) or reverse polarity is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 so that the electrostatic The chuck 24 is lifted off the substrate. Thereafter, the deposition-completed substrate is unloaded from the vacuum container 21 by the transport robot 14 .

In the above description, the film forming apparatus 11 has a so-called bottom-up deposition method (Depo-up) in which the film is formed in a state in which the film forming surface of the substrate S faces downward in the vertical direction, but it is not limited thereto, and the substrate (S) may be arranged in a state in which it stands upright on the side surface of the vacuum container 21, and the film formation may be formed in a state where the film formation surface of the substrate S is parallel to the direction of gravity.

<Method of manufacturing electronic device>

Next, an example of the manufacturing method of the electronic device using the film-forming apparatus of this embodiment is demonstrated. Hereinafter, the structure and manufacturing method of an organic electroluminescent display are illustrated as an example of an electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 5(a) is an overall view of the organic EL display device 60, and Fig. 5(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 5A , in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix form. Although details will be described later, each of the light emitting devices has a structure including an organic layer sandwiched between a pair of electrodes. In addition, a pixel here refers to the minimum unit which enables the display of a desired color in the display area 61. As shown in FIG. In the case of the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. has been The pixel 62 is often composed of a combination of a red light emitting device, a green light emitting device, and a blue light emitting device, but may be a combination of a yellow light emitting device, a cyan light emitting device, and a white light emitting device. not.

FIG.5(b) is a partial cross-sectional schematic diagram in the line AB of FIG.5(a). The pixel 62 has an organic EL element having an anode 64 , a hole transport layer 65 , light emitting layers 66R, 66G, and 66B, an electron transport layer 67 , and a cathode 68 on a substrate 63 . . Among them, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In this embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green color, and the light emitting layer 66B is an organic EL layer emitting blue color. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64 . In addition, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

Although the hole transport layer 65 or the electron transport layer 67 is shown as one layer in FIG. 5(b), depending on the structure of the organic EL display device, it may be formed of a plurality of layers including the hole blocking layer or the electron blocking layer. may be Also, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 may be formed. . Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67 .

Next, an example of the manufacturing method of an organic electroluminescent display apparatus is demonstrated concretely.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by lithography to form an opening in the portion where the anode 64 is formed to form the insulating layer 69 . This opening corresponds to the light emitting region in which the light emitting element actually emits light.

The substrate 63 patterned with the insulating layer 69 is loaded into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and a hole transport layer 65 is formed as a common layer over the anode 64 of the display area. . The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed in a size larger than that of the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is loaded into the second organic material film forming apparatus, and is held by an electrostatic chuck. The substrate and the mask are aligned, the mask is held with the substrate interposed therebetween by an electrostatic chuck, and a red light emitting layer 66R is formed on the portion of the substrate 63 where the red emitting element is placed.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green light is formed by the third organic material film forming apparatus, and the light emitting layer 66B which emits blue color is further formed by the fourth organic material film forming apparatus. After the formation of the light emitting layers 66R, 66G, and 66B is completed, an electron transporting layer 67 is formed over the entire display area 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of the three colors.

A cathode 68 is formed by moving the substrate formed up to the electron transport layer 67 to a metallic deposition material film forming apparatus.

According to the present invention, the substrate and/or the mask is adsorbed and held by the electrostatic chuck 24, but when the mask is adsorbed, the electrostatic chuck 24 and the mask M are spaced apart by a predetermined interval at a predetermined voltage. is applied to the electrostatic chuck 24 and the central portion of the mask M, which is convex toward the electrostatic chuck 24 due to the electrostatic force generated, is used as the suction starting point, so that the mask is adsorbed to the electrostatic chuck 24 without wrinkles.

After that, it is transferred to a plasma CVD apparatus to form a protective layer 70 , thereby completing the organic EL display apparatus 60 .

From the time the substrate 63 on which the insulating layer 69 is patterned is brought into the film forming apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is It may be deteriorated by moisture or oxygen. Therefore, in this example, carrying in and carrying out of the board|substrate between film forming apparatuses is performed in a vacuum atmosphere or inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: film forming device
21: vacuum vessel
22: substrate support unit
23: mask support unit
24: electrostatic chuck
26: substrate Z actuator
27: mask Z actuator
28: electrostatic chuck Z actuator
40: control unit

Claims (30)

an adsorbent supporting unit for supporting the adsorbed body;
an electrostatic chuck installed on one side of the adsorbent support unit to adsorb the adsorbent;
a distance adjusting means for adjusting a distance between the adsorbed body support unit and the electrostatic chuck;
a control unit for controlling application of a voltage to the electrostatic chuck and adjustment of a distance between the adsorbed body support unit and the electrostatic chuck by the distance adjusting means;
The control unit may include, in a state in which the adsorbent supporting unit and the electrostatic chuck are spaced apart from each other by a predetermined distance, a voltage for sucking the adsorbed body supported by the adsorbent supporting unit in a direction toward the electrostatic chuck is applied to the electrostatic chuck. control to be applied to the chuck,
The control unit controls the distance adjusting means to relatively approach the electrostatic chuck and the adsorbent supporting unit while the voltage is applied to the electrostatic chuck;
The suction device according to claim 1, wherein the voltage for suctioning is a voltage that makes the adsorbed body convex in a direction toward the electrostatic chuck. delete The distance at which the adsorbed body does not contact the electrostatic chuck when the adsorbed body has a convex shape in a direction toward the electrostatic chuck when the suction voltage is applied to the predetermined interval Adsorption device, characterized in that. The method of claim 1, wherein the distance adjusting means comprises at least one of an adsorbent supporting unit driving actuator for driving the adsorbed body supporting unit, and an electrostatic chuck driving actuator for driving the electrostatic chuck. adsorption device. The adsorption apparatus according to claim 1, wherein the adsorption target supporting unit includes at least one of a substrate supporting unit for supporting a substrate and a mask supporting unit for supporting a mask. a substrate support unit for supporting the substrate;
a mask support unit installed on one side of the substrate support unit to support a mask;
an electrostatic chuck installed on a side opposite to the mask support unit with respect to the substrate support unit, the electrostatic chuck for adsorbing the mask with the substrate and the substrate interposed therebetween;
a distance adjusting means for adjusting a distance between the mask support unit and the electrostatic chuck;
a control unit for controlling voltage application to the electrostatic chuck and adjustment of a distance between the mask support unit and the electrostatic chuck by the distance adjusting means;
The controller controls the distance adjusting means such that a distance between the electrostatic chuck and the mask support unit becomes a predetermined distance with the substrate interposed therebetween, and the electrostatic chuck and the mask support unit are spaced apart from each other by the predetermined distance and controlling to apply a predetermined voltage to the electrostatic chuck to make the mask convex in a direction toward the electrostatic chuck. The method of claim 6 , wherein the predetermined interval is a distance at which the mask does not contact the substrate adsorbed to the electrostatic chuck when the predetermined voltage is applied to make the mask convex toward the electrostatic chuck. A film forming apparatus, characterized in that. The film forming apparatus according to claim 6, wherein the predetermined distance is equal to or greater than a sum of the amount of warpage of the mask supported by the mask support unit and the thickness of the substrate. The film forming apparatus of claim 8 , wherein the predetermined interval is substantially equal to a sum of the amount of warpage of the mask and the thickness of the substrate. The film forming unit of claim 6 , wherein the control unit controls the distance adjusting means to relatively bring the electrostatic chuck and the mask supporting unit closer to each other while the mask has a convex shape toward the electrostatic chuck. Device. 11. The method of claim 10, wherein the control unit relatively approaches the electrostatic chuck and the mask supporting unit, or after the approach is completed, the voltage applied to the electrostatic chuck is applied to the mask from the predetermined voltage with the substrate interposed therebetween. A film forming apparatus, characterized in that the control is changed to a voltage for adsorbing. The film forming apparatus of claim 6 , wherein the distance adjusting means includes at least one of a mask support unit driving actuator for driving the mask support unit and an electrostatic chuck driving actuator for driving the electrostatic chuck. a suction step of applying a predetermined voltage to the electrostatic chuck spaced apart from the adsorbent by a predetermined distance to draw the adsorbed body in a direction toward the electrostatic chuck;
and adsorbing the adsorbed body to the electrostatic chuck by relatively approaching the adsorbed body and the electrostatic chuck while the predetermined voltage is applied;
The adsorption method according to claim 1, wherein the predetermined voltage applied to the electrostatic chuck in the sucking step is a voltage that makes the adsorbed body convex in a direction toward the electrostatic chuck. delete The adsorption method according to claim 13, wherein the adsorbent is a substrate. The adsorption method according to claim 13, wherein the adsorbent is a mask. A method for adsorbing an adsorbent, comprising:
a first adsorption step of adsorbing a first adsorbent by applying a first voltage to the electrostatic chuck;
A direction in which a predetermined voltage is applied to the electrostatic chuck to move the second absorbent toward the electrostatic chuck while the electrostatic chuck and the second adsorbed body are spaced apart from each other with the first adsorbed body interposed therebetween a suction step to make it convex with
a second adsorption step of adsorbing the second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween by bringing the second adsorbed body and the electrostatic chuck relatively close to each other from the predetermined distance;
Adsorption method comprising the. 18. The method of claim 17, wherein the predetermined interval is at a predetermined interval, when the second adsorbent is convex toward the electrostatic chuck by applying the predetermined voltage, the second adsorbent is attracted to the electrostatic chuck. 1 An adsorption method, characterized in that the distance is not in contact with an adsorbent. The second adsorbed body is supported by a second adsorbed body supporting unit, and the predetermined interval is the amount of deflection of the second adsorbed body supported by the second adsorbed body supporting unit and the second adsorbed body supporting unit. 1 An adsorption method, characterized in that the distance is equal to or greater than the sum of the thicknesses of the adsorbed body. The adsorption method according to claim 19, wherein the predetermined interval is substantially equal to the sum of the amount of warpage of the second adsorbed body and the thickness of the first adsorbed body. 20. The method of claim 19, wherein in the second adsorption step, while the electrostatic chuck and the second adsorbent supporting unit are relatively approached or after the approach is completed, the voltage applied to the electrostatic chuck is changed from the predetermined voltage to the voltage applied to the electrostatic chuck. An adsorption method characterized in that the voltage is changed to a third voltage for adsorbing the second adsorbed body with the first adsorbed body interposed therebetween. 18. The method of claim 17, further comprising: applying a second voltage to the electrostatic chuck for maintaining the adsorption of the first adsorbent to the electrostatic chuck after the first adsorption step;
The adsorption method, characterized in that the predetermined voltage is equal to or greater than the second voltage. The adsorption method according to claim 17, wherein the predetermined voltage is equal to a third voltage for adsorbing the second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween. 18. The method of claim 17, wherein in the second adsorption step, the first adsorbed body is brought into contact with the first adsorbed body from a convex portion of the second adsorbed body in the suction step, and the first adsorbed body is interposed between the electrostatic chuck. An adsorption method characterized in that the second adsorbent is adsorbed. A method for adsorbing an adsorbent, comprising:
a first applying step of applying a first voltage for adsorbing a first adsorbent to the electrostatic chuck to the electrostatic chuck;
a first moving step of relatively moving the second adsorbed body and the electrostatic chuck so that the electrostatic chuck and the second adsorbed body are spaced apart by a predetermined distance with the first adsorbed body interposed therebetween;
In a state in which the electrostatic chuck and the second adsorbed body are spaced apart from each other by a predetermined interval with the first adsorbent interposed therebetween, a predetermined voltage is applied so that the second adsorbed body is convex in a direction toward the electrostatic chuck a second authorization step;
a second moving step of relatively moving the second adsorbent and the electrostatic chuck so that the second adsorbed body is adsorbed to the electrostatic chuck beyond the first adsorbed body while the predetermined voltage is applied;
Adsorption method comprising the. The adsorption method according to claim 25, wherein the predetermined voltage is a third voltage for adsorbing the second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween. A film forming method for forming a deposition material on a substrate through a mask, comprising:
bringing the mask into the vacuum container;
loading a substrate into the vacuum container;
adsorbing the substrate by applying a first voltage to the electrostatic chuck;
making the mask convex in a direction toward the electrostatic chuck by applying a predetermined voltage to the electrostatic chuck while the electrostatic chuck and the mask are spaced apart from each other with the substrate interposed therebetween;
adsorbing the mask to the electrostatic chuck over the substrate by bringing the mask and the electrostatic chuck relatively close to each other from the predetermined distance;
and evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck to form a deposition material on the substrate through the mask. 28. The method of claim 27, wherein in the adsorption of the mask, in the step of making the mask convex in a direction toward the electrostatic chuck, the mask is brought into contact with the substrate from the convex portion to attach the substrate to the electrostatic chuck. A film-forming method characterized in that the mask is adsorbed with it interposed therebetween. A film forming method for forming a deposition material on a substrate through a mask, comprising:
bringing the mask into the vacuum container;
loading a substrate into the vacuum container;
a first applying step of applying a first voltage to the electrostatic chuck so that a first substrate is adsorbed to the electrostatic chuck;
a first moving step of relatively moving the mask and the electrostatic chuck so that the electrostatic chuck and the mask are spaced apart by a predetermined distance with the substrate interposed therebetween;
a second applying step of applying a predetermined voltage such that the mask becomes convex in a direction toward the electrostatic chuck while the electrostatic chuck and the mask are spaced apart by a predetermined interval with the substrate interposed therebetween;
a second moving step of relatively moving the mask and the electrostatic chuck so that the mask is adsorbed to the electrostatic chuck over the substrate while the predetermined voltage is applied;
and evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck to form a deposition material on the substrate through the mask. 30. A method of manufacturing an electronic device, characterized in that the electronic device is manufactured using the film forming method according to any one of claims 27 to 29.

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