CN116752098A - Adsorption device, position adjustment method, and film forming method - Google Patents

Adsorption device, position adjustment method, and film forming method Download PDF

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Publication number
CN116752098A
CN116752098A CN202310744709.1A CN202310744709A CN116752098A CN 116752098 A CN116752098 A CN 116752098A CN 202310744709 A CN202310744709 A CN 202310744709A CN 116752098 A CN116752098 A CN 116752098A
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CN
China
Prior art keywords
electrostatic chuck
mask
substrate
voltage
film forming
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Pending
Application number
CN202310744709.1A
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Chinese (zh)
Inventor
柏仓一史
石井博
神野纮隆
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Canon Tokki Corp
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Canon Tokki Corp
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Publication date
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Publication of CN116752098A publication Critical patent/CN116752098A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The application provides an adsorption device, a position adjustment method and a film forming method. The adsorption device is characterized by comprising: a mask supporting unit for supporting a mask; an electrostatic chuck disposed at one side of the mask supporting unit for adsorbing a substrate; and an adjustment member for adjusting a relative position of the mask support unit and the electrostatic chuck, wherein the adjustment member adjusts the relative position of the mask support unit and the electrostatic chuck in a state in which a force in a direction toward the electrostatic chuck acts on the mask so that the mask becomes convex in the direction toward the electrostatic chuck.

Description

Adsorption device, position adjustment method, and film forming method
The application relates to an adsorption device and method, a film forming device and method, a manufacturing method of an electronic device, a filing date of 2019, 09 and 20, and a divisional application of a patent application of 201910889651.3.
Technical Field
The application relates to an adsorption device, a position adjustment method and a film forming method.
Background
In the production of an organic EL display device (organic EL display), when an organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, an organic layer and a metal layer are formed by depositing a deposition material evaporated from a deposition source of a film forming device on a substrate through a mask on which a pixel pattern is formed.
In a film forming apparatus of an upward vapor deposition method (upward deposition), a vapor deposition source is provided at a lower portion of a vacuum vessel of the film forming apparatus, and a substrate is disposed at an upper portion of the vacuum vessel and vapor deposited on a lower surface of the substrate. In the vacuum chamber of such an upward vapor deposition film forming apparatus, only the peripheral portion of the lower surface of the substrate is held by the substrate holder, and therefore, the substrate is deflected by its own weight, which is one of the factors that deteriorate vapor deposition accuracy. In film forming apparatuses other than the vapor deposition method, there is a possibility that deflection occurs due to the weight of the substrate.
As a method for reducing deflection due to the self weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by sucking the entire upper surface of the substrate with the electrostatic chuck, the deflection of the substrate can be reduced.
In patent document 1 (korean patent laid-open publication No. 2007-0010723), a technique of adsorbing a substrate and a mask by an electrostatic chuck is proposed.
Patent document 1: korean patent laid-open publication No. 2007-0010723
However, in the conventional technique, when a mask is attracted to an electrostatic chuck via a substrate, there is a problem in that wrinkles remain on the attracted mask.
Disclosure of Invention
The purpose of the present invention is to satisfactorily adhere both the 1 st adsorbate and the 2 nd adsorbate to an electrostatic chuck.
Means for solving the problems
The adsorption apparatus according to claim 1 of the present invention is characterized in that the adsorption apparatus comprises: an adsorbate supporting unit for supporting the adsorbate; an electrostatic chuck provided at one side of the adsorbate supporting unit for adsorbing the adsorbate; a distance adjusting means for adjusting a distance between the adsorbate supporting unit and the electrostatic chuck; and a control unit configured to control voltage application to the electrostatic chuck and adjustment of a distance between the adsorbate supporting unit and the electrostatic chuck by the distance adjusting member, wherein the control unit controls the distance adjusting member so that a distance between the electrostatic chuck and the adsorbate supporting unit becomes a predetermined interval, and controls so that voltage for attracting the adsorbate supported by the adsorbate supporting unit in a direction toward the electrostatic chuck is applied to the electrostatic chuck in a state where the adsorbate supporting unit and the electrostatic chuck are separated by the predetermined interval.
A film forming apparatus according to claim 2 of the present invention is characterized by comprising: a substrate supporting unit for supporting a substrate; a mask supporting unit disposed at one side of the substrate supporting unit for supporting a mask; an electrostatic chuck provided on an opposite side of the mask support unit with respect to the substrate support unit, for sucking the substrate and sucking the mask through the substrate; a distance adjusting part for adjusting a distance between the mask supporting unit and the electrostatic chuck; and a control unit configured to control voltage application to the electrostatic chuck and adjustment of a distance between the mask support unit and the electrostatic chuck by the distance adjustment member, wherein the control unit controls the distance adjustment member so that the distance between the substrate and the mask support unit is a predetermined distance, and controls so that a predetermined voltage for making the mask convex in a direction toward the electrostatic chuck is applied to the electrostatic chuck in a state where the electrostatic chuck is spaced from the mask support unit by the predetermined distance.
The adsorption method according to claim 3 of the present invention is characterized by comprising: a suction step of applying a predetermined voltage to an electrostatic chuck spaced apart from a body to be suctioned by a predetermined interval, and sucking the body to be suctioned in a direction toward the electrostatic chuck; and a suction stage for causing the adsorbate to approach the electrostatic chuck in a relative manner and causing the adsorbate to be sucked by the electrostatic chuck.
An adsorption method according to claim 4 of the present invention is a method for adsorbing an adsorbate, comprising: a 1 st adsorption stage for applying a 1 st voltage to the electrostatic chuck to adsorb the 1 st adsorbate; a suction step of applying a predetermined voltage to the electrostatic chuck in a state where the 1 st adsorbate and the 2 nd adsorbate are separated by a predetermined interval, and making the 2 nd adsorbate convex in a direction toward the electrostatic chuck; and a 2 nd adsorption step of relatively approaching the 2 nd adsorbate and the electrostatic chuck from the predetermined interval and adsorbing the 2 nd adsorbate to the electrostatic chuck through the 1 st adsorbate.
An adsorption method according to claim 5 of the present invention is a method for adsorbing an adsorbate, comprising: a 1 st application stage of applying a 1 st voltage for adsorbing a 1 st adsorbate to the electrostatic chuck; a 1 st movement step of relatively moving the 2 nd adsorbate and the electrostatic chuck so that the 2 nd adsorbate and the electrostatic chuck are separated by a predetermined distance from each other by the 1 st adsorbate; a 2 nd applying step of applying a predetermined voltage to the 2 nd adsorbate so as to protrude in a direction toward the electrostatic chuck in a state where the 2 nd adsorbate and the electrostatic chuck are separated from each other by a predetermined distance from each other by the 1 st adsorbate; and a 2 nd moving step of moving the 2 nd adsorbate and the electrostatic chuck relatively in a state where the predetermined voltage is applied, so as to adsorb the 2 nd adsorbate to the electrostatic chuck through the 1 st adsorbate.
A film forming method according to claim 6 of the present invention is a film forming method for forming a film of a vapor deposition material on a substrate through a mask, comprising: a step of loading a mask into the vacuum container; a step of loading a substrate into the vacuum container; a stage of applying a 1 st voltage to the electrostatic chuck to attract the substrate; a step of applying a predetermined voltage to the electrostatic chuck while the electrostatic chuck and the mask are spaced apart from each other by a predetermined interval through the substrate to form the mask in a convex shape in a direction toward the electrostatic chuck; a step of relatively approaching the mask and the electrostatic chuck from the predetermined interval, and sucking the mask to the electrostatic chuck through the substrate; and a step of evaporating a vapor deposition material in a state where the substrate and the mask are adsorbed by the electrostatic chuck, and forming a film of the vapor deposition material on the substrate through the mask.
A film forming method according to claim 7 of the present invention is a film forming method for forming a film of a vapor deposition material on a substrate through a mask, comprising: a step of loading a mask into the vacuum container; a step of loading a substrate into the vacuum container; a 1 st application stage of applying a 1 st voltage for attracting the 1 st substrate to the electrostatic chuck; a 1 st movement stage of relatively moving the mask and the electrostatic chuck so that the mask and the electrostatic chuck are spaced apart from each other by a predetermined interval with the substrate interposed therebetween; a 2 nd applying step of applying a predetermined voltage to the mask so as to form a convex shape in a direction toward the electrostatic chuck in a state where the electrostatic chuck and the mask are separated from each other by a predetermined interval with the substrate interposed therebetween; a 2 nd movement step of relatively moving the mask and the electrostatic chuck in a state where the predetermined voltage is applied so that the mask is attracted to the electrostatic chuck through the substrate; and a step of evaporating a vapor deposition material in a state where the substrate and the mask are adsorbed by the electrostatic chuck, and forming a film of the vapor deposition material on the substrate through the mask.
A method for manufacturing an electronic device according to claim 8 of the present invention is characterized in that the electronic device is manufactured by using the film forming method according to claim 6 or 7 of the present invention.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, both the 1 st adsorbate and the 2 nd adsorbate can be favorably adsorbed by the electrostatic chuck so as not to leave wrinkles.
Drawings
Fig. 1 is a schematic view of a portion of a manufacturing apparatus for an electronic device.
FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention.
Fig. 3a to 3c are conceptual and schematic views of an electrostatic chuck system according to an embodiment of the present invention.
Fig. 4a to 4f are schematic views showing a method of sucking a substrate and a mask to an electrostatic chuck.
Fig. 5 is a schematic diagram showing an electronic device.
Description of the reference numerals
11: film forming apparatus
21: vacuum container
22: substrate supporting unit
23: mask support unit
24: electrostatic chuck
26: substrate Z actuator
27: mask Z actuator
28: electrostatic chuck Z actuator
40: control unit
Detailed Description
Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the accompanying drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are not limited to those described above unless specifically stated otherwise.
The present invention can be applied to a device for depositing various materials on a surface of a substrate to form a film, and can be preferably applied to a device for forming a thin film (material layer) of a desired pattern by vacuum vapor deposition. As a material of the substrate, any material such as glass, a film of a polymer material, and metal can be selected, and the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate, for example. As the vapor deposition material, any material such as an organic material or a metallic material (metal, metal oxide, or the like) may be selected. The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (ChemicalVapor Deposition: chemical vapor deposition) apparatus, in addition to the vacuum deposition apparatus described in the following description. The technique of the present invention is particularly applicable to a manufacturing apparatus of an organic electronic device (for example, an organic light-emitting element, a thin film solar cell), an optical member, or the like. Among them, an apparatus for manufacturing an organic light-emitting element, which forms an organic light-emitting element by evaporating a deposition material onto a substrate through a mask, is one of preferred application examples of the present invention.
[ apparatus for manufacturing electronic device ]
Fig. 1 is a plan view schematically showing a part of the structure of a manufacturing apparatus of an electronic device.
The manufacturing apparatus of fig. 1 is used for manufacturing a display panel of an organic EL display device for a smart phone, for example. In the case of a display panel for a smart phone, for example, a film for forming an organic EL element is formed on a 4.5-generation substrate (about 700mm×about 900 mm) or a 6-generation full-size (about 1500mm×about 1850 mm) or half-cut-size (about 1500mm×about 925 mm) substrate, and then the substrate is cut to produce a plurality of small-size panels.
The manufacturing apparatus of an electronic device generally includes a plurality of cluster apparatuses 1 and a relay apparatus connected between the cluster apparatuses.
The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing processing (for example, film forming) on the substrates S, a plurality of mask storage apparatuses 12 for storing the masks M before and after use, and a transfer chamber 13 disposed in the center thereof. As shown in fig. 1, the transfer chamber 13 is connected to the plurality of film forming apparatuses 11 and the mask storage apparatus 12, respectively.
A transfer robot 14 for transferring a substrate and a mask is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device disposed upstream to the film forming device 11. The transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask storage apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding the substrate S or the mask M is attached to a multi-joint arm.
In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in a vapor deposition source is heated by a heater and evaporated, and is deposited on a substrate through a mask. A series of film forming processes such as transfer of the substrate S to the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixation of the substrate S to the mask M, film formation (vapor deposition) and the like are performed by the film forming apparatus 11.
In the mask storage device 12, a new mask used in the film forming process in the film forming device 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask storage apparatus 12, and transfers a new mask stored in another cassette of the mask storage apparatus 12 to the film forming apparatus 11.
The cluster apparatus 1 is connected to a path chamber 15 and a buffer chamber 16, the path chamber 15 transferring the substrate S from the upstream side to the cluster apparatus 1 in the flow direction of the substrate S, and the buffer chamber 16 transferring the substrate S having been subjected to the film formation process in the cluster apparatus 1 to another cluster apparatus on the downstream side. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11 a) in the cluster apparatus 1. The transfer robot 14 receives the substrate S, which has been subjected to the film formation process in the cluster apparatus 1, from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11 b) and transfers the substrate S to the buffer chamber 16 connected to the downstream side.
A swivel chamber 17 for changing the orientation of the substrate is provided between the buffer chamber 16 and the path chamber 15. The turning chamber 17 is provided with a transfer robot 18, and the transfer robot 18 is configured to receive the substrate S from the buffer chamber 16 and transfer the substrate S to the path chamber 15 by rotating the substrate S by 180 °. Thus, the orientation of the substrate S is the same in the upstream cluster apparatus and the downstream cluster apparatus, and the substrate processing is facilitated.
The path room 15, the buffer room 16, and the swing room 17 are so-called relay devices that connect the cluster devices, and the relay devices provided on the upstream side and/or downstream side of the cluster devices include at least one of the path room, the buffer room, and the swing room.
The film forming apparatus 11, the mask storage apparatus 12, the conveyance chamber 13, the buffer chamber 16, the turn-around chamber 17, and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting element. The path chamber 15 is typically maintained in a low vacuum state, but may also be maintained in a high vacuum state as desired.
In this embodiment, the structure of the apparatus for manufacturing an electronic device is described with reference to fig. 1, but the present invention is not limited to this, and other kinds of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers may be changed.
The specific configuration of the film forming apparatus 11 will be described below.
[ film Forming apparatus ]
Fig. 2 is a schematic diagram showing the structure of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) during film formation, the width direction (direction parallel to the short side) of the substrate S is defined as the X direction, and the length direction (direction parallel to the long side) is defined as the Y direction. In addition, the rotation angle around the Z axis is denoted by θ.
The film forming apparatus 11 includes a vacuum chamber 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen, and a substrate support unit 22, a mask support unit 23, an electrostatic chuck 24, and a vapor deposition source 25 provided inside the vacuum chamber 21.
The substrate support unit 22 is a member that receives and holds the substrate S conveyed by the conveyance robot 14 provided in the conveyance chamber 13, and is also called a substrate holder.
A mask support unit 23 is provided below the substrate support unit 22. The mask supporting unit 23 is a member that receives and holds the mask M conveyed by the conveying robot 14 provided in the conveying chamber 13, and is also called a mask holder.
The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, a Mask used for manufacturing an organic EL element for a smart phone is a Metal Mask having a Fine opening pattern formed therein, and is also called a FMM (Fine Metal Mask).
An electrostatic chuck 24 for attracting and fixing a substrate by electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which a circuit such as a metal electrode is embedded in a dielectric (e.g., ceramic material) substrate. The electrostatic chuck 24 may be either a coulomb force type electrostatic chuck or a johnson-ravigneaux type electrostatic chuck or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. The electrostatic chuck 24 is a gradient force type electrostatic chuck, and even when the substrate S is an insulating substrate, the electrostatic chuck 24 can satisfactorily perform suction. For example, in the case where the electrostatic chuck 24 is a coulomb force type electrostatic chuck, when a positive (+) and a negative (-) potential are applied to the metal electrode, a polarized charge having a polarity opposite to that of the metal electrode is induced to the adsorbate such as the substrate S through the dielectric base, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by electrostatic attraction therebetween.
The electrostatic chuck 24 may be formed of one plate or may be formed with a plurality of sub-plates. In the case of forming the circuit by one board, a plurality of circuits may be included in the circuit to control the electrostatic attraction in one board so as to be different depending on the position.
In the present embodiment, as described later, not only the substrate S (the 1 st adsorbate) but also the mask M (the 2 nd adsorbate) are adsorbed and held by the electrostatic chuck 24 before film formation.
That is, in the present embodiment, the substrate S (the 1 st adsorbate) placed on the lower side in the vertical direction of the electrostatic chuck 24 is sucked and held by the electrostatic chuck, and then the mask M (the 2 nd adsorbate) placed on the opposite side of the electrostatic chuck 24 across the substrate S (the 1 st adsorbate) is sucked and held by the electrostatic chuck 24 across the substrate S (the 1 st adsorbate). In particular, when the substrate S is sucked by the electrostatic chuck 24 and/or the mask M is sucked through the substrate S, a predetermined voltage is applied to the electrostatic chuck 24 in a state where the electrostatic chuck 24 is spaced apart from the substrate S or the mask M by a predetermined interval, and the substrate S or the mask M is pulled in by the electrostatic attraction of the electrostatic chuck 24, so that the portion of the substrate S or the mask M which is convex due to the electrostatic attraction of the electrostatic chuck 24 becomes a starting point of the suction of the electrostatic chuck to the substrate S or the mask M. In this regard, the description will be given later with reference to fig. 3 and 4.
Although not shown in fig. 2, deterioration or degradation of the organic material deposited on the substrate S may be suppressed by providing a cooling mechanism (e.g., a cooling plate) for suppressing a temperature rise of the substrate S on the opposite side of the suction surface of the electrostatic chuck 24.
The vapor deposition source 25 includes a crucible (not shown) for storing a vapor deposition material to be deposited on a substrate, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the vapor deposition material from scattering toward the substrate until the evaporation rate from the vapor deposition source becomes constant, and the like. The vapor deposition source 25 can have various structures depending on the application such as a point (point) vapor deposition source and a linear (linear) vapor deposition source.
Although not shown in fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculating unit (not shown) for measuring the thickness of the film deposited on the substrate.
A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21. The actuators 26, 27, 28 (distance adjusting means) and the position adjusting mechanism 29 are constituted by, for example, a motor and a ball screw, or a motor and a linear guide, but the present invention is not limited thereto, and other structures known in the art may be employed. The substrate Z actuator 26 is a driving member for raising and lowering (Z-direction movement) the substrate support unit 22. The mask Z actuator 27 is a driving member for lifting (Z-direction movement) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving member for raising and lowering (Z-direction movement) the electrostatic chuck 24.
The position adjustment mechanism 29 is a driving member for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, Y direction, and θ rotation with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, the electrostatic chuck 24 is adjusted in position in the directions X, Y and θ in a state where the substrate S is adsorbed, so that the alignment of the relative positions of the substrate S and the mask M is adjusted.
An alignment camera 20 may be provided on the outer upper surface of the vacuum chamber 21 in addition to the above-described driving mechanism, and the alignment camera 20 may be configured to capture alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum chamber 21. In the present embodiment, the alignment camera 20 may be provided at a position corresponding to the diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to the 4 corners of the rectangle.
The alignment camera 20 provided in the film forming apparatus 11 of the present embodiment is a fine alignment camera used for adjusting the relative position of the substrate S and the mask M with high accuracy, and is a camera having a narrow angle of view but high resolution. The film forming apparatus 11 may have a rough alignment camera having a relatively wide angle of view and a low resolution, in addition to the fine alignment camera 20.
The position adjustment mechanism 29 performs alignment for adjusting the positions of the substrate S (the 1 st adsorbate) and the mask M (the 2 nd adsorbate) by relatively moving the substrate S (the 1 st adsorbate) and the mask M (the 2 nd adsorbate) based on the positional information of the substrate S (the 1 st adsorbate) and the mask M (the 2 nd adsorbate) acquired by the alignment camera 20.
The film forming apparatus 11 includes a control unit 40. The control unit 40 has functions such as control of conveyance and alignment of the substrate S and the mask M, control of the vapor deposition source 25, and control of film formation.
In particular, the control unit 40 controls the elevation of the substrate support unit 22 by the substrate Z actuator 26, the elevation of the mask support unit 23 by the mask Z actuator 27, and the elevation of the electrostatic chuck 24 by the electrostatic chuck Z actuator 28. Thus, the control unit 40 can adjust the relative distance between the substrate S and/or the mask M and the electrostatic chuck 24 in the process of sucking the substrate S and the mask M onto the electrostatic chuck 24 and the process of separating the sucked substrate S and the mask M.
In particular, in order to adhere the substrate S or the mask M to the electrostatic chuck 24 via the substrate S, the control unit 40 controls the lift of the electrostatic chuck 24 and/or the substrate S or the lift of the electrostatic chuck 24 and/or the mask M once so that the electrostatic chuck 24 is spaced apart from the substrate S or the mask M by a predetermined distance, and then makes the substrate S or the mask M convex in a direction toward the electrostatic chuck 24 by electrostatic attraction force generated by applying a predetermined voltage to the electrostatic chuck 24. Thereafter, the lift of the electrostatic chuck 24 and/or the substrate S, or the lift of the electrostatic chuck 24 and/or the mask M is secondarily controlled so that the substrate S or the mask M is brought into contact with the electrostatic chuck 24 or the substrate S. Such a function of the control unit 40 may be realized by a separate Z actuator control unit (not shown).
The control unit 40 may also have a function of controlling the application of a voltage to the electrostatic chuck 24, which will be described later with reference to fig. 3.
The control unit 40 is constituted by a computer having a processor, a memory, a storage device, I/O, and the like, for example. In this case, the functions of the control section 40 are realized by the processor executing a program stored in the memory or the storage device. As the computer, a general-purpose personal computer or an embedded computer or PLC (programmable logic controller: programmable logic controller) may be used. Alternatively, part or all of the functions of the control unit may be constituted by a circuit such as an ASIC or FPGA. The control unit may be provided for each film forming apparatus, or one control unit may control a plurality of film forming apparatuses.
[ Electrostatic chuck System ]
The electrostatic chuck system 30 according to the present embodiment will be described with reference to fig. 3a to 3 c.
Fig. 3a is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, fig. 3b is a schematic top view of the electrostatic chuck 24, and fig. 3c is a schematic top view of the electrostatic chuck 24.
As shown in fig. 3a, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a voltage applying portion 31, and a voltage control portion 32.
The voltage applying section 31 applies a voltage for generating electrostatic attraction to the electrode section of the electrostatic chuck 24.
The voltage control unit 32 controls the magnitude of the voltage applied to the electrode unit from the voltage application unit 31, the voltage application start time, the voltage maintenance time, the voltage application sequence, and the like, in accordance with the progress of the suction process of the electrostatic chuck system 30 or the film formation process of the film formation apparatus 11. The voltage control unit 32 can, for example, independently control the voltage application to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for different sub-electrode units. In the present embodiment, the voltage control unit 32 is implemented independently of the control unit 40 of the film forming apparatus 11, but the present invention is not limited to this, and may be unified as the control unit 40 of the film forming apparatus 11.
The electrostatic chuck 24 includes an electrode portion for generating an electrostatic attraction force for attracting an object to be attracted (for example, the substrate S and the mask M) on the attraction surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 249. For example, as shown in fig. 3c, the electrostatic chuck 24 of the present embodiment includes a plurality of sub-electrode portions 241 to 249 divided along the longitudinal direction (Y direction) of the electrostatic chuck 24 and/or the width direction (X direction) of the electrostatic chuck 24.
Each sub-electrode portion includes an electrode pair 33 to which positive (polarity 1) and negative (polarity 2) potentials are applied in order to generate electrostatic attraction force. For example, each electrode pair 33 includes a 1 st electrode 331 to which a positive potential is applied and a 2 nd electrode 332 to which a negative potential is applied.
As shown in fig. 3c, the 1 st electrode 331 and the 2 nd electrode 332 have a comb shape, respectively. For example, the 1 st electrode 331 and the 2 nd electrode 332 each include a plurality of comb teeth portions and a base portion connected to the plurality of comb teeth portions. The bases of the electrodes 331 and 332 supply electric potential to the comb teeth, and the plurality of comb teeth generate electrostatic attraction force with the adsorbate. In one sub-electrode portion, the comb-teeth portions of the 1 st electrode 331 are alternately arranged so as to face the comb-teeth portions of the 2 nd electrode 332. By forming the comb teeth of the electrodes 331 and 332 so as to face each other and to intersect each other in this way, the interval between the electrodes to which different potentials are applied can be narrowed, a large uneven electric field can be formed, and the substrate S can be attracted by the gradient force.
In the present embodiment, the electrodes 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited to this, and may have various shapes as long as electrostatic attraction can be generated between the electrodes and the object to be adsorbed.
The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to the plurality of sub-electrode portions. For example, as shown in fig. 3c, the electrostatic chuck 24 of the present embodiment has 9 suction portions corresponding to the 9 sub-electrode portions 241 to 249, but the present invention is not limited thereto, and may have other numbers of suction portions in order to more precisely control suction of the substrate S.
The suction portion is provided so as to be divided in the longitudinal direction (Y-axis direction) and the width direction (X-axis direction) of the electrostatic chuck 24, but the suction portion is not limited thereto, and may be divided only in the longitudinal direction or the width direction of the electrostatic chuck 24. The plurality of suction portions may be realized by physically one plate having a plurality of electrode portions, or may be realized by physically dividing a plurality of plates each having one or more electrode portions.
In the embodiment shown in fig. 3c, the plurality of adsorbing portions may be implemented to correspond to the plurality of sub-electrode portions, respectively, or one adsorbing portion may include the plurality of sub-electrode portions.
For example, by controlling the voltage control unit 32 to apply the voltages to the sub-electrode units 241 to 249, as described later, it is possible to configure one adsorbing unit by 3 sub-electrode units 241, 244, 247 arranged in a direction (Y direction) intersecting the adsorbing traveling direction (X direction) of the substrate S. That is, although the voltage control can be performed independently for each of the 3 sub-electrode portions 241, 244, 247, the voltage is simultaneously applied to the 3 electrode portions 241, 244, 247 by controlling the voltage, and the 3 electrode portions 241, 244, 247 can function as one adsorption portion. The specific physical structure and the circuit structure of the plurality of suction units may be changed as long as the suction units can suction the substrate independently.
[ adsorption method based on electrostatic chuck System ]
Hereinafter, a method of sucking the substrate S and the mask M on the electrostatic chuck 24 will be described with reference to fig. 4a to 4 e. Hereinafter, the description will be given on the premise that the functions of the voltage control section 32 are different from those of the control section 40 of the film forming apparatus 11, but this is an exemplary explanation, and the functions of the voltage control section 32 described later may be unified with those of the control section 40 of the film forming apparatus 11.
Fig. 4a illustrates a process of sucking the substrate S to the electrostatic chuck 24 (the 1 st sucking stage).
In the present embodiment, as shown in fig. 4a, the entire surface of the substrate S is not simultaneously sucked to the lower surface of the electrostatic chuck 24, but is sequentially sucked from one end toward the other end along the 1 st side (short side) of the electrostatic chuck 24. However, the present invention is not limited to this, and the substrate S may be adsorbed from one corner on the diagonal line of the electrostatic chuck 24 to the other corner facing the one corner.
In order to sequentially attract the substrate S along the 1 st side of the electrostatic chuck 24, the order of applying the 1 st voltage for substrate attraction to the plurality of sub-electrode portions 241 to 249 may be controlled, or the 1 st voltage may be simultaneously applied to the plurality of sub-electrode portions, but the structure and the supporting force of the supporting portion of the substrate supporting unit 22 for supporting the substrate S may be made different.
Fig. 4a shows an embodiment in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling the voltages applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. Here, 3 sub-electrode portions 241, 244, 247 arranged along the longitudinal direction (Y direction) of the electrostatic chuck 24 constitute the 1 st suction portion 41, 3 sub-electrode portions 242, 245, 248 in the central portion of the electrostatic chuck 24 constitute the 2 nd suction portion 42, and the remaining 3 sub-electrode portions 243, 246, 249 constitute the 3 rd suction portion 43.
First, as shown in fig. 4a, the substrate S is carried into the vacuum chamber 21 of the film forming apparatus 11 and supported by the support portion of the substrate support unit 22.
Next, by the control of the electrostatic chuck Z actuator 28 by the control section 40, the electrostatic chuck 24 is lowered and moved toward the substrate S supported by the support section of the substrate support unit 22. In contrast, the substrate support unit 22 may be raised by controlling the substrate Z actuator 26 by the control unit 40, or the electrostatic chuck Z actuator 28 and the substrate Z actuator 26 may be controlled together to bring the electrostatic chuck 24 into relative proximity with the substrate S.
When the electrostatic chuck 24 is sufficiently brought into close proximity or contact with the substrate S, the voltage control section 32 controls to sequentially apply the 1 st voltage (Δv1) from the 1 st suction section 41 toward the 3 rd suction section 43 along the 1 st side (width) of the electrostatic chuck 24.
That is, as shown in fig. 4a, the 1 st voltage is applied to the 1 st adsorbing portion 41, the 1 st voltage is applied to the 2 nd adsorbing portion 42, and the 1 st voltage is applied to the 3 rd adsorbing portion 43.
In order to reliably adhere the substrate S to the electrostatic chuck 24, the 1 st voltage (Δv1) is set to a sufficiently large voltage.
As a result, the substrate S is sucked onto the electrostatic chuck 24 from the side of the substrate S corresponding to the 1 st suction portion 41 toward the 3 rd suction portion 43 side (i.e., the substrate S is sucked in the X direction) through the center portion of the substrate S, and the substrate S is sucked onto the electrostatic chuck 24 flat without leaving wrinkles in the center portion of the substrate.
In the present embodiment, the 1 st voltage (Δv1) is applied in a state where the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, but the 1 st voltage (Δv1) may be applied before or during the lowering of the electrostatic chuck 24 toward the substrate S.
Fig. 4b shows a process of adsorbing a substrate according to another embodiment of the present invention. In another embodiment of the present invention shown in fig. 4b, before the 1 st voltage (Δv1) for adsorbing the substrate S to the electrostatic chuck 24 is applied, the electrostatic chuck 24 and the substrate S are relatively moved by the substrate Z actuator 26 and/or the electrostatic chuck Z actuator 28 (by a distance adjusting member) so that the substrate S is spaced apart from the electrostatic chuck 24 by a predetermined interval (d).
Here, as shown in fig. 4b, the "distance between the electrostatic chuck 24 and the substrate S" is defined by the distance between the suction surface of the lower surface of the electrostatic chuck 24 and the upper surface of the substrate supporting unit 22. Thereby, the distance between the electrostatic chuck 24 and the substrate S can be defined regardless of the shape of the substrate S supported by the substrate support unit 22.
According to the present embodiment, the "predetermined interval d" is a distance by which the substrate S spaced from the electrostatic chuck 24 by the predetermined interval d can be deformed to be convex in the direction toward the electrostatic chuck 24 due to the electrostatic attraction force generated by the voltage applied to the electrostatic chuck 24.
The predetermined interval d is a distance at which the substrate S does not contact the electrostatic chuck 24 when the 1 st voltage (Δv1) is applied to the electrode portion of the electrostatic chuck 24 to make the substrate S convex in the direction toward the electrostatic chuck 24. When the 1 st voltage (Δv1) is applied and the substrate S is deformed to be convex toward the electrostatic chuck 24, the center portion of the substrate S is not brought into contact with the electrostatic chuck 24, but a portion between the center portion and the peripheral portion is brought into contact with the electrostatic chuck 24 earlier than the center portion, if the predetermined interval d is too small.
For example, the "predetermined interval d" is preferably equal to or larger than the deflection x of the substrate S, which is the magnitude of deflection of the substrate S supported by the substrate support unit 22 due to its own weight. Here, the deflection x of the substrate S means a maximum distance x of the substrate S from the horizontal plane when the substrate S is deflected into a concave shape by its own weight.
However, if the distance between the electrostatic chuck 24 and the substrate S is too large, the substrate S becomes convex toward the electrostatic chuck 24, and thus there is a problem in that a relatively large voltage has to be applied. In this regard, the "predetermined interval d" is more preferably substantially the same as the deflection x of the substrate.
The 1 st voltage (Δv1) is applied to the electrode portion of the electrostatic chuck 24 in a state where the distance between the electrostatic chuck 24 and the substrate S or the distance between the substrate support unit 22 and the electrostatic chuck 24 is maintained at a predetermined interval d. Thus, the substrate S is convex in a direction toward the electrostatic chuck 24 due to the electrostatic attraction from the electrostatic chuck 24.
Next, when the electrostatic chuck 24 is brought into close proximity with the substrate S, the central portion of the substrate S is first brought into contact with the electrostatic chuck 24 and then attracted. When the electrostatic chuck 24 and the substrate S are brought closer together, the substrate S is sequentially attracted from the center portion toward the peripheral portion of the substrate S. This enables the substrate S to be attracted to the electrostatic chuck 24 in a flat state.
In the embodiment shown in fig. 4b, the case where the 1 st voltage, which is the voltage for sucking the substrate S to the electrostatic chuck 24, is applied in a state where the electrostatic chuck 24 is spaced apart from the substrate S by the predetermined interval d has been described, but the present invention is not limited thereto, and a predetermined voltage lower than the 1 st voltage may be applied as long as the substrate S can be convex. In this case, after the substrate S is convex due to the predetermined voltage, the voltage applied to the electrostatic chuck 24 may be changed from the predetermined voltage to the 1 st voltage (Δv1) in a process of bringing the electrostatic chuck 24 and the substrate S relatively close to each other or in a state where the central portion of the substrate S is in contact with the electrostatic chuck 24.
In the embodiment shown in fig. 4b, the 1 st voltage (Δv1) or a predetermined voltage to be applied to the entire electrode portion of the electrostatic chuck 24 to form the substrate S into a convex shape is shown as an example, but the present invention is not limited to this, and as long as the substrate S can be formed into a convex shape by the 1 st voltage (Δv1) or the predetermined voltage to be applied to the electrostatic chuck 24, the voltages may be sequentially applied to different sub-electrode portions of the electrostatic chuck 24 or to different adsorbing portions. For example, the voltage may be applied to the 1 st suction portion and the 3 rd suction portion after the voltage is applied to the 2 nd suction portion of the electrostatic chuck 24.
According to the embodiment shown in fig. 4a or the embodiment shown in fig. 4b, at a predetermined timing after the completion of the suction process (1 st suction stage) of the substrate S onto the electrostatic chuck 24, as shown in fig. 4c, the voltage control unit 32 decreases the voltage applied to the electrode portion of the electrostatic chuck 24 from the 1 st voltage (Δv1) to a 2 nd voltage (Δv2) smaller than the 1 st voltage (Δv1).
The 2 nd voltage (Δv2) is a chucking maintenance voltage for maintaining the substrate S in a state of being chucked to the electrostatic chuck 24, and is a voltage lower than the 1 st voltage (Δv1) applied when the substrate S is chucked to the electrostatic chuck 24. When the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage (Δv2), as shown in fig. 4c, the amount of polarization charge induced on the substrate S is reduced as compared with the case of applying the 1 st voltage (Δv1), but after the substrate S is once attracted to the electrostatic chuck 24 by the 1 st voltage (Δv1), the attracted state of the substrate can be maintained even if the 2 nd voltage (Δv2) lower than the 1 st voltage (Δv1) is applied.
In this way, by reducing the voltage applied to the electrode portion of the electrostatic chuck 24 to the 2 nd voltage (Δv2), the time taken to separate the substrate from the electrostatic chuck 24 can be shortened.
That is, when the substrate S is to be separated from the electrostatic chuck 24, even if the voltage applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the electrostatic attraction between the electrostatic chuck 24 and the substrate S does not immediately disappear, but it takes a time (in the order of several minutes, depending on the case), equivalent to the disappearance of the electric charges induced at the interface between the electrostatic chuck 24 and the substrate S. In particular, when the substrate S is attracted to the electrostatic chuck 24, the 1 st voltage (for example, Δvmax shown in fig. 5) is usually set so that the electrostatic attraction force sufficiently larger than the minimum electrostatic attraction force required for attracting the substrate to the electrostatic chuck 24 acts in order to reliably perform the attraction, but a considerable time is required until the substrate can be separated from such 1 st voltage.
In the present embodiment, in order to prevent an increase in the overall process time (tact) due to the time taken to separate the substrate S from such an electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage at a predetermined timing after the substrate S is attracted to the electrostatic chuck 24.
In the embodiment shown in fig. 4c, the voltage applied to the 1 st to 3 rd suction portions 41 to 43 of the electrostatic chuck 24 is simultaneously reduced to the 2 nd voltage, but the present invention is not limited to this, and the time for reducing to the 2 nd voltage and the magnitude of the applied 2 nd voltage may be different for different suction portions. For example, the voltage may be sequentially reduced from the 1 st adsorbing portion 41 to the 3 rd adsorbing portion 43 to the 2 nd voltage.
In this way, after the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to the 2 nd voltage, the relative position between the substrate S attracted to the electrostatic chuck 24 and the mask M supported by the mask support unit 23 is adjusted (aligned) by the control of the position adjustment mechanism 29 by the control unit 40. In the present embodiment, the case where the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to the 2 nd voltage has been described, but the present invention is not limited to this, and the alignment process may be performed in a state where the 1 st voltage is applied to the electrode portion of the electrostatic chuck 24.
Next, in a state where the 2 nd voltage is continuously applied to the electrode portion of the electrostatic chuck 24, the control unit 40 controls the electrostatic chuck Z actuator 28 and/or the mask Z actuator 27 to move the electrostatic chuck 24 relative to the mask support unit 23 so that the distance between the electrostatic chuck 24 and the mask M is set to have a predetermined distance d. That is, according to the present invention, in the step of sucking the mask M to the electrostatic chuck 24 via the substrate S, the mask M is not brought into contact with the lower surface of the substrate S immediately, but the electrostatic chuck 24 and the mask M are first brought into a state of being spaced apart with a predetermined interval d.
Here, as shown in fig. 4d, the "distance between the electrostatic chuck 24 and the mask M" is defined by the distance between the suction surface of the lower surface of the electrostatic chuck 24 and the upper surface of the mask supporting unit 23. Thereby, the distance between the electrostatic chuck 24 and the mask M can be defined irrespective of the shape of the mask M supported by the mask support unit 23. In addition, the thickness of the mask M is relatively thin, and the thickness of the mask M itself is negligible in the distance between the electrostatic chuck 2 and the mask M.
According to the embodiment of the present invention, the "predetermined distance d" corresponding to the distance between the electrostatic chuck 24 and the mask M is a distance to such an extent that the mask M spaced apart from the electrostatic chuck 24 by the predetermined distance d is deformed to be convex in the direction toward the electrostatic chuck 24 by the electrostatic attraction force generated on the electrostatic chuck 24 according to the application of the predetermined voltage. The predetermined voltage may be the 3 rd voltage which is the voltage applied to cause the mask M to be attracted to the electrostatic chuck 24 through the substrate S, but is not limited thereto as will be described later.
The predetermined interval d is a distance at which the convex portion of the mask M does not contact the substrate S attached to the electrostatic chuck 24 when the predetermined voltage is applied and the mask M is convex toward the electrostatic chuck 24. If the predetermined interval d is too small, the mask M is deformed into a convex shape toward the electrostatic chuck 24 by applying the predetermined voltage, and other portions of the mask M (for example, not the central portion but a portion between the central portion and the peripheral portion) are brought into contact with the substrate S earlier than the central portion.
For example, the "predetermined interval d" is preferably equal to or greater than a distance obtained by adding the thickness of the substrate S to the deflection x of the mask M, which is supported by the mask support unit 23 and which is indicative of the magnitude of deflection of the mask M due to its own weight. The thickness of the substrate S may also be about 0.5mm or more or less. The deflection x of the mask means the maximum distance x of the mask M from the horizontal plane when the mask is deflected into a concave shape by its own weight.
However, if the distance between the electrostatic chuck 24 and the mask M is too large, the mask M becomes convex toward the electrostatic chuck 24, and therefore, there is a problem in that a relatively large voltage has to be applied. In view of this, the "predetermined interval d" is more preferably substantially the same as the distance obtained by adding the deflection x of the mask and the thickness of the substrate S.
In order to bring the electrostatic chuck 24 into close opposition to the mask support unit 23 at a time, for example, as shown in fig. 4d, the electrostatic chuck 24 may be lowered toward the mask M by controlling the electrostatic chuck Z actuator 28 by the control unit 40, the mask M may be raised toward the substrate S side attracted to the electrostatic chuck 24 by controlling the mask support unit 23 by the control unit 40, or the electrostatic chuck 24 may be brought into close opposition to the mask support unit 23 by controlling the electrostatic chuck Z actuator 28 and the mask Z actuator 27 together by the control unit 40.
Next, as shown in fig. 4e, the voltage control unit 32 controls to apply a predetermined voltage to the electrode portion of the electrostatic chuck 24 while maintaining the distance between the electrostatic chuck 24 and the mask M at a predetermined distance d. By applying a predetermined voltage to the electrostatic chuck 24, the mask M is attracted upward by an electrostatic attraction force applied to the mask M spaced apart from the electrostatic chuck 24 by a predetermined interval d (attraction stage).
As a result, the center portion of the mask M protrudes upward, and the mask M is formed to have a convex shape, thereby forming a starting point for the suction of the mask M onto the electrostatic chuck 24.
The predetermined voltage is preferably greater than the 2 nd voltage (Δv2) and the mask M is chargeable by electrostatic induction through the substrate S. Thus, the mask M spaced apart from the electrostatic chuck 24 by a predetermined distance d is convex in a direction toward the electrostatic chuck 24 through the substrate S. In this case, the "predetermined interval d" can be set to be larger than the limit distance by which the electrostatic attraction force generated by the attraction maintaining voltage (the 2 nd voltage, Δv2) applied to the electrostatic chuck 24 does not act on the mask M, but is not limited thereto.
As an example, the predetermined voltage may be a 3 rd voltage (Δv3) which is a voltage for causing the mask M to be attracted to the electrostatic chuck 24 through the substrate S. In this case, since a process of changing from a predetermined voltage to the 3 rd voltage (Δv3) is not required in the subsequent steps, the control of the voltage becomes simple.
However, the present invention is not limited to this, and the predetermined voltage may have the same magnitude as the 2 nd voltage (Δv2). Even if the prescribed voltage has the same magnitude as the 2 nd voltage (Δv2), the mask M can be attracted by the electrostatic attractive force from the electrostatic chuck 24 to form a convex shape in the direction toward the electrostatic chuck 24 as long as the distance between the electrostatic chuck 24 and the mask M is smaller than the limit distance by which the electrostatic attractive force generated by the 2 nd voltage (Δv2) applied to the electrostatic chuck 24 does not act on the mask M.
The predetermined voltage may be smaller than the 1 st voltage (Δv1), or may be set to a level equivalent to the 1 st voltage (Δv1) in consideration of shortening of the process time (tact).
In the suction stage, the voltage control unit 32 can control to apply a predetermined voltage simultaneously over the entire electrostatic chuck 24. Since the mask M is clamped in a state in which at least the end portions of both sides (for example, the long sides) are pulled outward and supported by the mask supporting unit 23, even if an electrostatic attractive force due to a predetermined voltage applied simultaneously to the entire electrostatic chuck 24 is applied to the entire mask M, a central portion in which the tension acts relatively little more than a peripheral portion in which the tension acts relatively much more protrudes in the direction of the electrostatic chuck 24. However, the voltage control unit 32 may control to apply a predetermined voltage to only a part of the electrostatic chuck 24, for example, not the peripheral portion but the central portion, and the remaining part may maintain the 2 nd voltage, or may control to apply the voltage to the central portion first and then sequentially to the remaining part.
Next, as shown in fig. 4f, the mask M is sequentially attracted to the electrostatic chuck 24 from the center portion toward the peripheral portion through the substrate S (the 2 nd attraction stage). Accordingly, in a state where the predetermined voltage, for example, the 3 rd voltage is applied, the electrostatic chuck 24 and the mask support unit 23 are brought into close proximity twice with respect to each other, and the mask M is brought into contact with the lower surface of the substrate S by driving control of the electrostatic chuck Z actuator 28 and/or the mask Z actuator 27 by the control unit 40.
When the electrostatic chuck 24 and the mask support unit 23 are brought into close proximity with each other from the predetermined distance d in the 2 nd suction stage, the center portion of the mask M protruding in the suction stage is brought into contact with the lower surface of the substrate S and starts to be sucked by the electrostatic chuck 24. Then, suction is performed from the central portion of the mask M toward the peripheral portion in at least two directions in order. As a result, the mask M can be adsorbed across the substrate S without leaving wrinkles at least in the center portion of the mask M.
When the predetermined voltage is different from the 3 rd voltage for sucking the mask M to the electrostatic chuck M through the substrate S, the voltage control unit 32 controls to apply the 3 rd voltage to the electrostatic chuck 24 in the 2 nd sucking step. For example, the voltage control unit 32 may change the voltage applied to the electrostatic chuck 24 from a predetermined voltage to the 3 rd voltage while the electrostatic chuck 24 is relatively moved closer to the mask support unit 23, or may change the voltage applied to the electrostatic chuck 24 from the predetermined voltage to the 3 rd voltage after the electrostatic chuck 24 is relatively moved closer to the mask support unit 23.
In order to bring the electrostatic chuck 24 into a second relative approach to the mask support unit 23, the electrostatic chuck 24 can be lowered toward the mask M by controlling the electrostatic chuck Z actuator 28 by the control unit 40. Alternatively, the mask M may be raised toward the substrate S attracted to the electrostatic chuck 24 by controlling the mask support unit 23 by the control unit 40, or the electrostatic chuck Z actuator 28 and the mask Z actuator 27 may be controlled together by the control unit 40 so that the electrostatic chuck 24 and the mask support unit 23 are brought into close proximity with each other.
According to the embodiment of the present invention described above, in the mask suction process of sucking the mask M to the electrostatic chuck 24 through the substrate S, the start point of the mask suction is formed so that the mask M protrudes in the direction toward the electrostatic chuck 24 by the electrostatic attraction generated by applying the predetermined voltage for sucking the mask to the electrostatic chuck 24 in a state where the electrostatic chuck 24 is spaced apart from the mask M by the predetermined interval d. In addition, by bringing the mask M and the electrostatic chuck 24 into relative proximity so that the mask M is in contact with the electrostatic chuck 24, the mask is sequentially suctioned from the suction start point formed. This allows the mask M to be attracted to the electrostatic chuck 24 through the substrate S without leaving wrinkles.
However, the present invention is not limited to this, and when the mask M is attracted to the electrostatic chuck 24 via the substrate S, the mask M may be attracted from one side to the other side in the same manner as in the method illustrated in fig. 4 a. For example, according to an embodiment of the present invention, when the substrate S is adsorbed to the electrostatic chuck 24, the adsorption is performed by the method illustrated in fig. 4b, and when the mask M is adsorbed to the electrostatic chuck 24 via the substrate S, the adsorption of the mask may be performed in the same manner as the method illustrated in fig. 4 a.
[ film Forming Process ]
Hereinafter, a film formation method using the adsorption method of the present embodiment will be described.
In a state where the mask M is placed on the mask support unit 23 in the vacuum chamber 21, the substrate is carried into the vacuum chamber 21 of the film forming apparatus 11 by the carrying robot 14 of the carrying chamber 13.
The hand of the transfer robot 14 that enters the vacuum vessel 21 places the substrate S on the support portion of the substrate support unit 22.
Next, the electrostatic chuck 24 is lowered toward the substrate S, and after the electrostatic chuck 24 is sufficiently brought close to or in contact with the substrate S, a 1 st voltage (Δv1) is applied to the electrostatic chuck 24 to attract the substrate S.
In one embodiment of the present invention, in order to maximize the time required to separate the substrate from the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced from the 1 st voltage (Δv1) to the 2 nd voltage (Δv2) after the substrate is attracted to the electrostatic chuck 24 is completed. Even if the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage (Δv2), since it takes time until the polarized charges induced in the substrate by the 1 st voltage (Δv1) are discharged, the attracted state of the electrostatic chuck 24 to the substrate can be maintained in a later process.
In a state where the substrate S is adsorbed on the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative positional displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off the electrostatic chuck 24 during the lowering of the substrate attached to the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 may be reduced to the 2 nd voltage (Δv2) after the lowering of the substrate is completed (i.e., immediately before the alignment process described later is started).
When the substrate S is lowered to the measurement position, the alignment marks formed on the substrate S and the mask M are photographed by the alignment camera 20, and the relative positional displacement of the substrate and the mask is measured. In another embodiment of the present invention, in order to further improve the accuracy of the measurement process of the relative position of the substrate and the mask, the voltage applied to the electrostatic chuck 24 may be reduced to the 2 nd voltage after the measurement process for alignment is completed (alignment process). By photographing the alignment mark of the substrate and the mask in a state where the electrostatic chuck 24 is strongly attracted to the substrate (a state where the substrate is maintained more flatly) by the 1 st voltage (Δv1), the accuracy of the measurement process can be improved.
As a result of the measurement, if it is found that the relative positional deviation of the substrate with respect to the mask exceeds the threshold value, the substrate S in a state of being attracted to the electrostatic chuck 24 is moved in the horizontal direction (xyθ direction), and the substrate is positionally adjusted (aligned) with respect to the mask. In another embodiment of the present invention, the voltage applied to the electrostatic chuck 24 may be reduced to the 2 nd voltage (Δv2) after the completion of the position adjustment process. This can further improve the accuracy throughout the alignment process (relative position measurement or position adjustment).
After the alignment step, the electrostatic chuck 24 is lowered toward the mask M, and the distance between the electrostatic chuck 24 and the mask M is set to a predetermined distance d. In a state where the electrostatic chuck 24 is spaced apart from the mask M by the predetermined distance d, the 2 nd voltage applied to the electrostatic chuck 24 does not charge the mask M, and substantially the electrostatic attraction does not act on the mask M.
In this state, a predetermined voltage greater than the 2 nd voltage, for example, the 3 rd voltage is applied to the electrostatic chuck 24. When the 3 rd voltage is applied to the electrostatic chuck 24, the mask M is attracted upward by the electrostatic attraction generated from the 3 rd voltage. As a result, the central portion on which the tension acts relatively little is projected upward instead of the peripheral portion of the mask M on which the tension acts relatively little, and is formed in a convex shape. Thereby, a starting point of mask adsorption is formed.
In a state where the 3 rd voltage is applied to the electrostatic chuck 24, the electrostatic chuck 24 is lowered toward the mask M and/or the mask M is raised toward the electrostatic chuck 24, so that the mask M is brought into contact with the lower surface of the substrate S attracted to the electrostatic chuck 24. In this process, the central portion of the mask M is brought into contact with the substrate S to start the suction, and suction is sequentially performed toward the peripheral portion of the mask M. As a result, the mask M is adsorbed to the electrostatic chuck 24 without leaving wrinkles. After the completion of the suction process of the mask M, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to a 4 th voltage (Δv4), which is a voltage capable of maintaining the state where the substrate and the mask are sucked to the electrostatic chuck 24. This can shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process is completed.
Next, the shutter of the vapor deposition source 25 is opened, and a vapor deposition material is deposited on the substrate S through a mask.
After vapor deposition to a desired thickness, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is reduced to the 5 th voltage (Δv5) to separate the mask M, and the substrate is lifted up by the electrostatic chuck Z actuator 28 in a state where only the substrate is attracted to the electrostatic chuck 24. Here, the 5 th voltage (Δv5) is a voltage having substantially the same magnitude as the 2 nd voltage for maintaining a state where the mask M is separated and only the substrate S is attracted to the electrostatic chuck 24.
Next, the hand of the transfer robot 14 enters the vacuum chamber 21 of the film forming apparatus 11, and a voltage of zero (0) or opposite polarity is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24, so that the electrostatic chuck 24 is separated from the substrate and lifted. Then, the vapor-deposited substrate is carried out of the vacuum container 21 by the transfer robot 14.
In the above description, the film forming apparatus 11 is configured to perform film formation with the film formation surface of the substrate S facing downward in the vertical direction, that is, a so-called upward vapor deposition method (upward deposition), but the present invention is not limited thereto, and the substrate S may be configured to be vertically standing up from the side surface of the vacuum vessel 21, and to perform film formation with the film formation surface of the substrate S parallel to the gravity direction.
[ method of manufacturing electronic device ]
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, as examples of the electronic device, a structure and a manufacturing method of the organic EL display device are illustrated.
First, an organic EL display device to be manufactured is explained. Fig. 5 (a) shows an overall view of the organic EL display device 60, and fig. 5 (b) shows a 1-pixel cross-sectional structure.
As shown in fig. 5 (a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of the organic EL display device 60. As will be described in detail later, the light-emitting elements each have a structure including an organic layer sandwiched between a pair of electrodes. The pixel herein refers to the smallest unit that can display a desired color in the display area 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is configured by a combination of the 1 st light-emitting element 62R, the 2 nd light-emitting element 62G, and the 3 rd light-emitting element 62B which display mutually different light emissions. The pixel 62 is often constituted by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be constituted by a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least 1 color or more.
Fig. 5 (B) is a schematic partial cross-sectional view at line a-B of fig. 5 (a). The pixel 62 includes an organic EL element including an anode 64, a hole transport layer 65, one of light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. Among them, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also sometimes referred to as organic EL elements) that emit red light, green light, and blue light, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed so as to be common to the plurality of light-emitting elements 62R, 62G, and 62B, or may be formed for each light-emitting element. In order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64. Further, since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
In fig. 5 (b), the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but may be formed as a plurality of layers including a hole blocking layer and an electron blocking layer according to the structure of the organic EL display element. In addition, a hole injection layer having a band structure that allows holes to be smoothly injected from the anode 64 into the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.
Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a circuit (not shown) for driving the organic EL display device is prepared, and a substrate 63 having an anode 64 formed thereon.
An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by photolithography so that an opening is formed at a portion where the anode 64 is formed, and the insulating layer 69 is formed. The opening corresponds to a light emitting region where the light emitting element actually emits light.
The substrate 63 on which the insulating layer 69 is patterned is carried into the 1 st organic material film forming apparatus, the substrate is held by the electrostatic chuck, and the hole transport layer 65 is formed as a common layer over the anode 64 in the display region. The hole transport layer 65 is formed by vacuum deposition. In practice, since the hole transport layer 65 is formed to be larger in size than the display region 61, a high-definition mask is not required.
Next, the substrate 63 having the hole transport layer 65 formed thereon is carried into the 2 nd organic material film forming apparatus and held by the electrostatic chuck. The alignment of the substrate and the mask is performed, the mask is held by the electrostatic chuck via the substrate, and a light-emitting layer 66R that emits red light is formed on a portion of the substrate 63 where the red light-emitting element is arranged.
In the same manner as the formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by the 3 rd organic material film forming device, and the light-emitting layer 66B emitting blue light is formed by the 4 th organic material film forming device. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the 5 th film forming apparatus. The electron transport layer 67 is formed as a common layer to the 3-color light emitting layers 66R, 66G, 66B.
The substrate on which the electron transport layer 67 is formed is moved to a metallic vapor deposition material film forming device, and a cathode 68 is formed.
According to the present invention, the substrate and/or the mask is sucked and held by the electrostatic chuck 24, and at the time of suction of the mask, the mask is sucked to the electrostatic chuck 24 without wrinkles by using the central portion of the mask M, which is convex toward the electrostatic chuck 24 due to the electrostatic force generated by applying a predetermined voltage to the electrostatic chuck 24, as the start point of suction in a state where the electrostatic chuck 24 and the mask M are spaced apart at a predetermined interval.
Thereafter, the substrate is moved to a plasma CVD apparatus to form a film protective layer 70, thereby completing the organic EL display device 60.
When the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus until the formation of the protective layer 70 is completed, the light-emitting layer made of an organic EL material may be degraded by moisture and oxygen if exposed to an atmosphere containing moisture and oxygen. Thus, in this example, the substrate is carried in and out between the film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.
The above-described embodiment shows an example of the present invention, but the present invention is not limited to the configuration of the above-described embodiment, and may be modified appropriately within the scope of the technical idea.

Claims (6)

1. An adsorption device is characterized in that,
the adsorption device includes:
a mask supporting unit for supporting a mask;
an electrostatic chuck disposed at one side of the mask supporting unit for adsorbing a substrate; and
an adjusting member for adjusting a relative position of the mask supporting unit and the electrostatic chuck,
the adjustment member adjusts a relative position of the mask support unit and the electrostatic chuck in a state where a force in a direction toward the electrostatic chuck acts on the mask so as to make the mask convex in the direction toward the electrostatic chuck.
2. The adsorption apparatus of claim 1 wherein,
when the mask is convex toward the electrostatic chuck, the mask is not in contact with the substrate attached to the electrostatic chuck.
3. The adsorption apparatus of claim 1 wherein,
the adjustment member relatively approaches the mask support unit and the electrostatic chuck.
4. The adsorption apparatus of claim 1 wherein,
the adjustment member includes at least one of a mask support unit driving actuator for driving the mask support unit and an electrostatic chuck driving actuator for driving the electrostatic chuck.
5. A position adjusting method for a mask and a substrate is characterized in that,
the position adjustment method includes:
a mask supporting step of supporting a mask;
an electrostatic suction step of sucking the substrate onto an electrostatic chuck provided on one side of the mask support unit;
an action step of applying a force to the mask in a direction toward the electrostatic chuck; and
and an adjustment step of adjusting a relative position between the mask support unit and the electrostatic chuck in a state in which a force in a direction toward the electrostatic chuck acts on the mask so that the mask is convex in the direction toward the electrostatic chuck.
6. A film forming method, characterized in that,
the film forming method includes a film forming step of forming a film on the substrate through the mask after the position adjustment method according to claim 5 is performed.
CN202310744709.1A 2018-09-21 2019-09-20 Adsorption device, position adjustment method, and film forming method Pending CN116752098A (en)

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KR10-2018-0114448 2018-09-21
CN201910889651.3A CN110938800B (en) 2018-09-21 2019-09-20 Adsorption device and method, film forming device and method, and method for manufacturing electronic device

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