CN110943026A - Electrostatic chuck system, film forming apparatus, method for separating adsorbed object, film forming method, and method for manufacturing electronic device - Google Patents

Electrostatic chuck system, film forming apparatus, method for separating adsorbed object, film forming method, and method for manufacturing electronic device Download PDF

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Publication number
CN110943026A
CN110943026A CN201910889616.1A CN201910889616A CN110943026A CN 110943026 A CN110943026 A CN 110943026A CN 201910889616 A CN201910889616 A CN 201910889616A CN 110943026 A CN110943026 A CN 110943026A
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CN
China
Prior art keywords
voltage
electrostatic chuck
substrate
mask
adherend
Prior art date
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Pending
Application number
CN201910889616.1A
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Chinese (zh)
Inventor
柏仓一史
石井博
细谷映之
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Canon Tokki Corp
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Canon Tokki Corp
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Publication of CN110943026A publication Critical patent/CN110943026A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Abstract

The invention provides an electrostatic chuck system, a film forming apparatus, an adherend separation method, a film forming method, and a method for manufacturing an electronic device, the electrostatic chuck system including: an electrostatic chuck comprising an electrode portion; a voltage applying unit configured to apply a voltage to the electrode unit of the electrostatic chuck; and a voltage control unit configured to control voltage application by the voltage application unit, wherein the voltage control unit controls the voltage application unit to sequentially apply a 1 st voltage for separating the 2 nd adherend from the 1 st adherend and a 2 nd voltage for separating the 1 st adherend from the electrode unit to an electrode unit of the electrostatic chuck to which the 1 st adherend is adhered and to which the 2 nd adherend is adhered via the 1 st adherend.

Description

Electrostatic chuck system, film forming apparatus, method for separating adsorbed object, film forming method, and method for manufacturing electronic device
Technical Field
The invention relates to an electrostatic chuck system, a film forming apparatus, an adherend separation method, a film forming method, and a method of manufacturing an electronic device.
Background
In the manufacture of an organic EL display device (organic EL display), when forming an organic light-emitting element (organic EL element; OLED) constituting the organic EL display device, a vapor deposition material evaporated from a vapor deposition source of a film formation device is vapor-deposited on a substrate through a mask on which a pixel pattern is formed, thereby forming an organic layer and a metal layer.
In a film forming apparatus of an upward vapor deposition method (upward deposition), a vapor deposition source is provided at a lower portion of a vacuum chamber of the film forming apparatus, and a substrate is disposed at an upper portion of the vacuum chamber and vapor-deposited on a lower surface of the substrate. In the vacuum chamber of such a deposition apparatus of the upward vapor deposition method, only the peripheral portion of the lower surface of the substrate is held by the substrate holder, and therefore the substrate is deflected by its own weight, which is one of the factors that decrease the deposition accuracy. In a film forming apparatus of a system other than the vapor deposition system, there is a possibility that the substrate is deflected by its own weight.
As a method for reducing the deflection due to the self weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by attracting the entire upper surface of the substrate with the electrostatic chuck, the deflection of the substrate can be reduced.
Patent document 1 (korean patent laid-open publication No. 2007 and 0010723) proposes a technique of attracting a substrate and a mask by an electrostatic chuck.
Patent document 1: korean patent laid-open publication No. 2007 and 0010723
However, patent document 1 does not disclose voltage control when separating the substrate and the mask from the electrostatic chuck.
Disclosure of Invention
The purpose of the present invention is to separate a 1 st adherend and a 2 nd adherend, which are adhered to an electrostatic chuck, from the electrostatic chuck in a satisfactory manner.
Means for solving the problems
An electrostatic chuck system according to an aspect of the present invention is characterized by including: an electrostatic chuck comprising an electrode portion; a voltage applying unit configured to apply a voltage to the electrode unit of the electrostatic chuck; and a voltage control unit configured to control voltage application by the voltage application unit, wherein the voltage control unit controls the voltage application unit to sequentially apply a 1 st voltage for separating the 2 nd adherend from the 1 st adherend and a 2 nd voltage for separating the 1 st adherend from the electrode unit to an electrode unit of the electrostatic chuck to which the 1 st adherend is adhered and to which the 2 nd adherend is adhered via the 1 st adherend.
A film forming apparatus according to an aspect of the present invention is a film forming apparatus for forming a film on a substrate with a mask interposed therebetween, the film forming apparatus including an electrostatic chuck system for attracting a substrate as a 1 st adherend and a mask as a 2 nd adherend, the electrostatic chuck system being the electrostatic chuck system according to the aspect of the present invention.
An adherend separation method according to an aspect of the present invention is a method for separating an adherend from an electrode portion of an electrostatic chuck including the electrode portion, the method including: a step of applying a 1 st voltage for separating the 2 nd adherend from the 1 st adherend to an electrode portion of the electrostatic chuck to which the 1 st adherend is adhered and to which the 2 nd adherend is adhered via the 1 st adherend; and a step of applying a 2 nd voltage for separating the 1 st adsorbed body from the electrode section to the electrode section after the 1 st voltage application step.
A film forming method according to an aspect of the present invention is a method for forming a film of a vapor deposition material on a substrate through a mask, the film forming method including: a step of carrying the mask into the vacuum container; a stage of carrying the substrate into the vacuum container; applying a 1 st adsorption voltage to an electrode part of the electrostatic chuck to make the substrate adsorbed on the electrostatic chuck; applying a 2 nd adsorption voltage to the electrode part, and adsorbing the mask to the electrostatic chuck through the substrate; a step of evaporating a vapor deposition material in a state where the substrate and the mask are attracted to the electrostatic chuck, and forming a film of the vapor deposition material on the substrate through the mask; and a step of sequentially separating the mask as a 2 nd adherend and the substrate as a 1 st adherend from the electrostatic chuck by using the separation method according to the aspect of the present invention.
The method for manufacturing an electronic device according to an aspect of the present invention is characterized by manufacturing an electronic device by using the film formation method according to an aspect of the present invention.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, the 1 st adherend and the 2 nd adherend adsorbed on the electrostatic chuck can be favorably separated.
Drawings
Fig. 1 is a schematic view of a part of an apparatus for manufacturing an electronic device.
FIG. 2 is a schematic view of a film deposition apparatus according to an embodiment of the present invention.
Fig. 3a to 3c are conceptual and schematic views of an electrostatic chuck system according to an embodiment of the present invention.
Fig. 4 is a process diagram showing a procedure of attracting the substrate to the electrostatic chuck.
Fig. 5 is a process diagram showing a sequence of adsorption of a mask to an electrostatic chuck.
Fig. 6 is a process diagram showing a procedure of separating the mask and the substrate from the electrostatic chuck.
Fig. 7 is a graph showing a change in voltage applied to the electrostatic chuck.
Fig. 8 is a schematic diagram showing an electronic device.
Description of the reference numerals
1: cluster device
11: film forming apparatus
12: mask storage device
13: conveying chamber
14: transfer robot
20: camera for alignment
21: vacuum container
22: substrate support unit
23: mask supporting unit
24: electrostatic chuck
25: evaporation source
28: electrostatic chuck Z actuator
29: position adjusting mechanism
30: electrostatic chuck system
31: voltage applying part
32: voltage control unit
33: electrode pair
41-43: 1 st to 3 rd adsorption parts
241-249: sub-electrode part
331: 1 st electrode
332: 2 nd electrode
Detailed Description
Preferred embodiments and examples of the present invention will be described below with reference to the accompanying drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like are not particularly limited, and the scope of the present invention is not limited to these.
The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition. As a material of the substrate, any material such as glass, a film of a polymer material, or a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. As the vapor deposition material, any material such as an organic material or a metallic material (metal, metal oxide, or the like) may be selected. The present invention can be applied to a film deposition apparatus including a sputtering apparatus and a CVD (chemical vapor deposition) apparatus, in addition to the vacuum deposition apparatus described in the following description. The technique of the present invention is particularly applicable to manufacturing apparatuses of organic electronic devices (e.g., organic light-emitting elements, thin-film solar cells), optical members, and the like. Among these, an apparatus for manufacturing an organic light-emitting element, which forms an organic light-emitting element by evaporating a vapor deposition material and depositing the vapor deposition material on a substrate through a mask, is one of preferable application examples of the present invention.
[ manufacturing apparatus for electronic device ]
Fig. 1 is a plan view schematically showing a part of the structure of an apparatus for manufacturing an electronic device.
The manufacturing apparatus of fig. 1 is used for manufacturing a display panel of an organic EL display device for a smart phone, for example. In the case of a display panel for a smartphone, for example, a film for forming an organic EL element is formed on a 4.5 th generation substrate (about 700mm × about 900mm), a 6 th generation substrate having a full size (about 1500mm × about 1850mm), or a half-cut size (about 1500mm × about 925mm), and then the substrate is cut out to produce a plurality of small-sized panels.
The manufacturing apparatus of electronic devices generally includes a plurality of cluster apparatuses 1 and relay apparatuses connected between the cluster apparatuses.
The cluster apparatus 1 includes a plurality of film deposition devices 11 for performing processes (e.g., film deposition) on the substrate S, a plurality of mask storage devices 12 for storing masks M before and after use, and a transfer chamber 13 disposed at the center thereof. As shown in fig. 1, the transfer chamber 13 is connected to the plurality of film deposition apparatuses 11 and the mask stocker 12, respectively.
A transfer robot 14 for transferring the substrate and the mask is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device disposed on the upstream side to the film deposition apparatus 11. Further, the transfer robot 14 transfers the mask M between the film formation device 11 and the mask stocker 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding the substrate S or the mask M is attached to an articulated arm.
In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in a vapor deposition source is heated by a heater to be evaporated, and is deposited on a substrate through a mask. The film forming apparatus 11 performs a series of film forming processes such as delivery and delivery of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixation of the substrate S to the mask M, and film formation (vapor deposition).
The mask stocker 12 stores a new mask used in the film forming process in the film forming apparatus 11 and a used mask separately in two cassettes. The transfer robot 14 transfers the used mask from the film deposition apparatus 11 to the cassette of the mask stocker 12, and transfers a new mask stored in another cassette of the mask stocker 12 to the film deposition apparatus 11.
The cluster apparatus 1 is connected to a passage chamber 15 and a buffer chamber 16, the passage chamber 15 transferring the substrate S from the upstream side to the cluster apparatus 1 in the flow direction of the substrate S, and the buffer chamber 16 transferring the substrate S on which the film formation process has been completed in the cluster apparatus 1 to another cluster apparatus on the downstream side. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) in the cluster apparatus 1. The transfer robot 14 receives the substrate S on which the film formation process has been completed in the cluster apparatus 1 from one of the plurality of film formation apparatuses 11 (e.g., the film formation apparatus 11b), and transfers the substrate S to the buffer chamber 16 connected downstream.
A turning chamber 17 for changing the orientation of the substrate is provided between the buffer chamber 16 and the path chamber 15. A transfer robot 18 is provided in the turning chamber 17, and the transfer robot 18 receives the substrate S from the buffer chamber 16 and transfers the substrate S to the path chamber 15 by rotating the substrate S by 180 °. This makes it possible to easily process the substrates S in the same direction in the upstream cluster device and the downstream cluster device.
The path chamber 15, the buffer chamber 16, and the turning chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices provided on the upstream side and/or the downstream side of the cluster devices include at least one of the path chamber, the buffer chamber, and the turning chamber.
The film forming apparatus 11, the mask stocker 12, the transfer chamber 13, the buffer chamber 16, the turning chamber 17, and the like are maintained in a high vacuum state during the process of manufacturing the organic light emitting element. The path chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.
In this embodiment, the structure of the apparatus for manufacturing an electronic device is described with reference to fig. 1, but the present invention is not limited to this, and other types of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers may be changed.
The following describes a specific configuration of the film formation apparatus 11.
[ film Forming apparatus ]
Fig. 2 is a schematic diagram showing the structure of the film formation apparatus 11. In the following description, an XYZ rectangular coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to a horizontal plane (XY plane) during film formation, the width direction (direction parallel to the short side) of the substrate S is defined as the X direction, and the length direction (direction parallel to the long side) is defined as the Y direction. In addition, the rotation angle around the Z axis is represented by θ.
The film forming apparatus 11 includes a vacuum chamber 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen, and a substrate support unit 22, a mask support unit 23, an electrostatic chuck 24, and a vapor deposition source 25 provided inside the vacuum chamber 21.
The substrate support unit 22 is a member that receives and holds the substrate S conveyed by the conveyance robot 14 provided in the conveyance chamber 13, and is also referred to as a substrate holder.
A mask supporting unit 23 is provided below the substrate supporting unit 22. The mask support unit 23 is a member that receives and holds the mask M transferred by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.
The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, a Mask used for manufacturing an organic EL element for a smart phone is a Metal Mask having a Fine opening pattern formed therein, and is also referred to as FMM (Fine Metal Mask).
An electrostatic chuck 24 for attracting and fixing the substrate by an electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which a circuit such as a metal electrode is embedded in a dielectric (e.g., ceramic material) base body. Electrostatic chuck 24 may be a coulombic force type electrostatic chuck, a johnson rabickel force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, the electrostatic chuck 24 can satisfactorily perform suction. For example, in the case where the electrostatic chuck 24 is a coulomb force type electrostatic chuck, when potentials of plus (+) and minus (-) are applied to the metal electrode, a polarized charge of the opposite polarity to that of the metal electrode is induced to an adherend such as the substrate S through the dielectric base, and the substrate S is attracted and fixed to the electrostatic chuck 24 by the electrostatic attraction therebetween.
The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of sub-plates. In the case where the electrostatic attraction force is controlled by a single board, a plurality of circuits may be included in the board, and the electrostatic attraction force may be controlled to be different depending on the position in the board.
In the present embodiment, as described later, not only the substrate S (1 st adherend) but also the mask M (2 nd adherend) is sucked and held by the electrostatic chuck 24 before film formation. After that, the film formation is performed in a state where the substrate S (1 st adherend) and the mask M (2 nd adherend) are held by the electrostatic chuck 24, and after the film formation is completed, the holding of the substrate S (1 st adherend) and the mask M (2 nd adherend) by the electrostatic chuck 24 is released.
That is, in the present embodiment, the substrate S (1 st adherend) placed on the lower side of the electrostatic chuck 24 in the vertical direction is attracted and held by the electrostatic chuck 24 via the substrate S (1 st adherend), and then the mask M (2 nd adherend) placed on the opposite side of the electrostatic chuck 24 via the substrate S (1 st adherend) is attracted and held by the electrostatic chuck 24 via the substrate S (1 st adherend). After the film formation is performed in a state where the substrate S (1 st adherend) and the mask M (2 nd adherend) are held by the electrostatic chuck 24, the substrate S (1 st adherend) and the mask M (2 nd adherend) are peeled off from the electrostatic chuck 24. At this time, the mask M (2 nd adherend) adsorbed through the substrate S (1 st adherend) is peeled off, and then the substrate S (1 st adherend) is peeled off. This will be described later with reference to fig. 4 to 7.
Although not shown in fig. 2, a cooling mechanism (e.g., a cooling plate) for suppressing the temperature rise of the substrate S may be provided on the opposite side of the suction surface of the electrostatic chuck 24 to suppress the deterioration or degradation of the organic material deposited on the substrate S.
The vapor deposition source 25 includes a crucible (not shown) for storing a vapor deposition material to be deposited on a substrate, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the vapor deposition material from being scattered toward the substrate until the evaporation rate from the vapor deposition source becomes constant, and the like. The vapor deposition source 25 can have various configurations depending on the use such as a point (point) vapor deposition source or a line (linear) vapor deposition source.
Although not shown in fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculating unit (not shown) for measuring the thickness of a film deposited on a substrate.
A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum chamber 21. These actuators and position adjustment mechanisms are constituted by, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for moving up and down (moving in the Z direction) the substrate support unit 22. The mask Z actuator 27 is a driving member for raising and lowering (moving in the Z direction) the mask supporting unit 23. The electrostatic chuck Z actuator 28 is a driving member for moving up and down (Z-direction movement) the electrostatic chuck 24.
The position adjustment mechanism 29 is a driving member for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, the Y direction, and θ rotation with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, the relative position of the substrate S and the mask M is adjusted by adjusting the position of the electrostatic chuck 24 in the direction X, Y and θ in a state where the substrate S is attracted.
In addition to the above-described drive mechanism, an alignment camera 20 may be provided on the outer upper surface of the vacuum chamber 21, and the alignment camera 20 may be configured to take an image of an alignment mark formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum chamber 21. In the present embodiment, the alignment camera 20 may be provided at a position corresponding to a diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to 4 corners of the rectangle.
The alignment camera 20 provided in the film formation apparatus 11 of the present embodiment is a fine alignment camera used to accurately adjust the relative position of the substrate S and the mask M, and is a camera having a narrow angle of view and a high resolution. The film deposition apparatus 11 may have a coarse alignment camera with a relatively wide angle of view and low resolution, in addition to the fine alignment camera 20.
The position adjustment mechanism 29 performs alignment for adjusting the position of the substrate S (the 1 st adherend) and the mask M (the 2 nd adherend) by relatively moving the substrate S (the 1 st adherend) and the mask M (the 2 nd adherend) based on the position information of the substrate S (the 1 st adherend) and the mask M (the 2 nd adherend) acquired by the alignment camera 20.
The film deposition apparatus 11 includes a control unit (not shown). The control section has functions of carrying and aligning the substrate S, controlling the vapor deposition source 25, controlling the film formation, and the like. The control unit may be constituted by a computer having a processor, a memory, a storage device, an I/O, and the like, for example. In this case, the function of the control section is realized by the processor executing a program stored in the memory or the storage device. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, a part or all of the functions of the control unit may be constituted by a circuit such as an ASIC or FPGA. Further, the control unit may be provided for each of the film forming apparatuses, or one control unit may control a plurality of film forming apparatuses.
[ Electrostatic chuck System ]
The electrostatic chuck system 30 of the present embodiment will be described with reference to fig. 3a to 3 c.
Fig. 3a is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, fig. 3b is a schematic cross-sectional view of the electrostatic chuck 24, and fig. 3c is a schematic top view of the electrostatic chuck 24.
As shown in fig. 3a, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a voltage applying unit 31, and a voltage control unit 32.
The voltage applying unit 31 applies a voltage for generating an electrostatic attraction force to the electrode portion of the electrostatic chuck 24.
The voltage control unit 32 controls the magnitude of the voltage applied from the voltage applying unit 31 to the electrode unit, the start time of application of the voltage, the time for maintaining the voltage, the order of application of the voltage, and the like, in accordance with the progress of the adsorption process of the electrostatic chuck system 30 or the film formation process of the film formation apparatus 11. The voltage control unit 32 can independently control the voltage application to a plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24, for example, for different sub-electrode units. In the present embodiment, the voltage control unit 32 is implemented independently of the control unit of the film formation apparatus 11, but the present invention is not limited thereto, and may be unified as the control unit of the film formation apparatus 11.
The electrostatic chuck 24 includes an electrode portion that generates an electrostatic attraction force for attracting an object to be attracted (e.g., the substrate S or the mask M) on the attraction surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 249. For example, as shown in fig. 3c, the electrostatic chuck 24 of the present embodiment includes a plurality of sub-electrode portions 241 to 249 divided along the longitudinal direction (Y direction) of the electrostatic chuck 24 and/or the width direction (X direction) of the electrostatic chuck 24.
Each sub-electrode portion includes an electrode pair 33 to which positive (1 st polarity) and negative (2 nd polarity) potentials are applied in order to generate electrostatic attraction force. For example, each electrode pair 33 includes a 1 st electrode 331 to which a positive potential is applied and a 2 nd electrode 332 to which a negative potential is applied.
As shown in fig. 3c, the 1 st electrode 331 and the 2 nd electrode 332 each have a comb shape. For example, the 1 st electrode 331 and the 2 nd electrode 332 each include a plurality of comb-teeth and a base portion connected to the plurality of comb-teeth. The base portions of the electrodes 331 and 332 supply a potential to the comb teeth, and the plurality of comb teeth generate electrostatic attraction force with the object to be attracted. In one sub-electrode portion, the 1 st electrode 331 has comb-shaped teeth alternately arranged to face the 2 nd electrode 332. In this way, by forming the electrodes 331 and 332 such that the comb-shaped teeth face each other and are staggered with each other, the gap between the electrodes to which different potentials are applied can be narrowed, a large non-uniform electric field can be formed, and the substrate S can be attracted by a gradient force.
In the present embodiment, the electrodes 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have a comb shape, but the present invention is not limited thereto, and various shapes can be provided as long as electrostatic attraction can be generated between the sub-electrode portions and an object to be attracted.
The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions. For example, as shown in fig. 3c, the electrostatic chuck 24 of the present embodiment has 9 adsorption portions corresponding to the 9 sub-electrode portions 241 to 249, but is not limited thereto, and may have another number of adsorption portions in order to control the adsorption of the substrate S more finely.
The suction portion is provided so as to be divided in the longitudinal direction (Y-axis direction) and the width direction (X-axis direction) of the electrostatic chuck 24, but is not limited thereto, and may be divided only in the longitudinal direction or the width direction of the electrostatic chuck 24. The plurality of adsorption portions may be realized by physically having a plurality of electrode portions on one plate, or may be realized by physically dividing a plurality of plates into one or more electrode portions.
For example, in the embodiment shown in fig. 3c, it may be realized that a plurality of adsorption portions respectively correspond to a plurality of sub-electrode portions, or that one adsorption portion includes a plurality of sub-electrode portions.
That is, by controlling the voltage application to the sub-electrode portions 241 to 249 by the voltage control unit 32, as will be described later, 3 sub-electrode portions 241, 244, 247 arranged in the direction (Y direction) intersecting the direction of travel of the attraction of the substrate S (X direction) can constitute one attraction portion. That is, the 3 sub-electrode portions 241, 244, 247 can be individually voltage-controlled, but by controlling the simultaneous application of voltages to the 3 electrode portions 241, 244, 247, the 3 electrode portions 241, 244, 247 can be made to function as one adsorption portion. The specific physical structure and the circuit structure may be changed as long as the substrate can be sucked to each of the plurality of suction portions independently.
[ adsorption and separation method and Voltage control based on Electrostatic chuck System ]
Hereinafter, a process of attracting and separating the substrate S and the mask M to and from the electrostatic chuck 24 and voltage control thereof will be described with reference to fig. 4 to 7.
(adsorption of substrate S)
Fig. 4 illustrates a process of attracting the substrate S to the electrostatic chuck 24.
In the present embodiment, as shown in fig. 4, the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24, but is sequentially attracted from one end to the other end along the 1 st side (short side) of the electrostatic chuck 24. However, the present invention is not limited to this, and for example, the substrate S may be attracted from one corner of the diagonal line of the electrostatic chuck 24 to the other corner facing the one corner. Further, the substrate may be sequentially sucked from the center portion toward the peripheral portion of the electrostatic chuck 24.
In order to sequentially attract the substrate S along the 1 st side of the electrostatic chuck 24, the order of applying the 1 st voltage for substrate attraction to the plurality of sub-electrode portions 241 to 249 may be controlled, or the 1 st voltage may be simultaneously applied to the plurality of sub-electrode portions 241 to 249, but the structure and the supporting force of the supporting portion of the substrate supporting unit 22 for supporting the substrate S are different.
Fig. 4 shows an embodiment in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling the voltages applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. Here, the explanation is made on the premise that the 3 sub-electrode portions 241, 244, and 247 arranged along the longitudinal direction (Y direction) of the electrostatic chuck 24 constitute the 1 st attraction portion 41, the 3 sub-electrode portions 242, 245, and 248 at the center of the electrostatic chuck 24 constitute the 2 nd attraction portion 42, and the remaining 3 sub-electrode portions 243, 246, and 249 constitute the 3 rd attraction portion 43.
First, the substrate S is carried into the vacuum chamber 21 of the film deposition apparatus 11 and placed on the support portion of the substrate support unit 22.
Next, the electrostatic chuck 24 is lowered and moved toward the substrate S placed on the support portion of the substrate support unit 22 (fig. 4 a).
When the electrostatic chuck 24 and the substrate S are sufficiently close to or in contact with each other, the voltage control unit 32 controls to sequentially apply the 1 st voltage (Δ V1) from the 1 st suction portion 41 toward the 3 rd suction portion 43 along the 1 st side (width) of the electrostatic chuck 24.
That is, control is performed such that the 1 st voltage (Δ V1) is first applied to the 1 st adsorption part 41 (fig. 4b), the 1 st voltage (Δ V1) is subsequently applied to the 2 nd adsorption part 42 (fig. 4c), and the 1 st voltage (Δ V1) is finally applied to the 3 rd adsorption part 43 (fig. 4 d).
The 1 st voltage (Δ V1) is set to a sufficiently large voltage in order to reliably attract the substrate S to the electrostatic chuck 24.
Accordingly, the substrate S is attracted to the electrostatic chuck 24 from the side of the substrate S corresponding to the 1 st attraction section 41 toward the 3 rd attraction section 43 side through the center portion of the substrate S (i.e., attraction of the substrate S is performed in the X direction), and the substrate S is attracted to the electrostatic chuck 24 flatly without leaving wrinkles in the center portion of the substrate S.
In the present embodiment, the 1 st voltage (Δ V1) is applied in a state where the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, but the 1 st voltage (Δ V1) may be applied before or during the start of the descent of the electrostatic chuck 24 toward the substrate S.
At a predetermined timing after the completion of the step of attracting the substrate S to the electrostatic chuck 24, the voltage controller 32 decreases the voltage applied to the electrode portion of the electrostatic chuck 24 from the 1 st voltage (Δ V1) to the 2 nd voltage (Δ V2) which is lower than the 1 st voltage (Δ V1), as shown in fig. 4 e.
The 2 nd voltage (Δ V2) is a chucking voltage for holding the substrate S in a state of being chucked by the electrostatic chuck 24, and is a voltage lower than the 1 st voltage (Δ V1) applied when the substrate S is chucked by the electrostatic chuck 24. When the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage (Δ V2), the amount of polarization charge induced on the substrate S corresponding thereto is also reduced as compared to the case of applying the 1 st voltage (Δ V1), but after the substrate S is once adsorbed to the electrostatic chuck 24 by the 1 st voltage (Δ V1), the adsorbed state of the substrate can be maintained even if the 2 nd voltage (Δ V2) lower than the 1 st voltage (Δ V1) is applied.
By reducing the voltage applied to the electrode portion of the electrostatic chuck 24 to the 2 nd voltage (Δ V2), the time taken to separate the substrate from the electrostatic chuck 24 can be shortened.
That is, when the substrate S is to be separated from the electrostatic chuck 24, even if the voltage applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the electrostatic attraction between the electrostatic chuck 24 and the substrate S does not disappear immediately, but it takes a time (in some cases, several minutes or so) corresponding to the disappearance of the electric charge induced at the interface between the electrostatic chuck 24 and the substrate S. In particular, when the substrate S is attracted to the electrostatic chuck 24, the 1 st voltage (for example, Δ Vmax shown in fig. 5) is usually set so that an electrostatic attraction sufficiently larger than the minimum electrostatic attraction (Fth) required for attracting the substrate by the electrostatic chuck 24 acts in order to reliably attract the substrate, but a considerable time is required until the substrate can be separated from the 1 st voltage.
In the present embodiment, in order to prevent an increase in the overall process time (tact) due to the time taken to separate the substrate S from the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage (Δ V2) at a predetermined timing after the substrate S is adsorbed to the electrostatic chuck 24.
In the illustrated embodiment, the voltage applied to the 1 st to 3 rd attraction sections 41 to 43 of the electrostatic chuck 24 is simultaneously decreased to the 2 nd voltage (Δ V2), but the present invention is not limited to this, and the timing of decreasing to the 2 nd voltage (Δ V2) and the magnitude of the applied 2 nd voltage (Δ V2) may be different for different attraction sections. For example, the voltage may be decreased from the 1 st adsorption part 41 to the 3 rd adsorption part 43 to the 2 nd voltage (Δ V2).
In this way, after the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to the 2 nd voltage (Δ V2), the relative position of the substrate S adsorbed on the electrostatic chuck 24 and the mask M placed on the mask support unit 23 is adjusted (aligned). In the present embodiment, the case where the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to the 2 nd voltage (Δ V2) is described, but the present invention is not limited thereto, and the alignment process may be performed in a state where the 1 st voltage (Δ V1) is applied to the electrode portion of the electrostatic chuck 24.
(adsorption of mask M)
When the adsorption of the substrate S and the alignment adjustment with the mask M are completed, the mask M is further adsorbed to the electrostatic chuck 24 via the adsorbed substrate S. Specifically, the 3 rd voltage (Δ V3) for attracting the mask M is applied to the electrode portion of the electrostatic chuck 24, whereby the mask M is attracted to the electrostatic chuck 24 via the substrate S. That is, the mask M is attracted to the lower surface of the substrate S attracted to the electrostatic chuck 24.
Fig. 5 shows a process of attracting the mask M to the electrostatic chuck 24.
First, the electrostatic chuck 24 on which the substrate S is attracted is lowered toward the mask M by the electrostatic chuck Z actuator 28 (fig. 5 a).
If the lower surface of the substrate S adsorbed on the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the voltage control unit 32 controls the voltage application unit 31 to apply the 3 rd voltage (Δ V3) to the electrode portion of the electrostatic chuck 24.
The 3 rd voltage (Δ V3) is preferably larger than the 2 nd voltage (Δ V2) and is preferably so large that the mask M can be charged by electrostatic induction through the substrate S. Thereby, the mask M can be attracted to the electrostatic chuck 24 via the substrate S. However, the present invention is not limited thereto, and the 3 rd voltage (Δ V3) may have the same magnitude as the 2 nd voltage (Δ V2). Even if the 3 rd voltage (Δ V3) has the same magnitude as the 2 nd voltage (Δ V2), since the relative distance between the electrostatic chuck 24 or the substrate S and the mask M is shortened by the lowering of the electrostatic chuck 24 as described above, electrostatic induction can be generated in the mask M by the polarized charge electrostatically induced in the substrate without further increasing the magnitude of the voltage applied to the electrode portion of the electrostatic chuck 24, and a suction force can be obtained to such an extent that the mask M can be attracted to the electrostatic chuck 24 via the substrate.
The 3 rd voltage (Δ V3) may be smaller than the 1 st voltage (Δ V1), or may be set to a level similar to the 1 st voltage (Δ V1) in consideration of shortening of the process time (tact).
In the mask chucking step shown in fig. 5, the voltage control unit 32 applies the 3 rd voltage (Δ V3) to the electrostatic chuck 24 not simultaneously over the entire electrostatic chuck 24 but sequentially from the 1 st chucking part 41 to the 3 rd chucking part 43 along the 1 st side in order to chuck the mask M on the lower surface of the substrate S without leaving wrinkles.
That is, control is performed such that the 3 rd voltage (Δ V3) is applied to the 1 st attraction section 41 (fig. 5b), the 3 rd voltage (Δ V3) is applied to the 2 nd attraction section 42 (fig. 5c), and the 3 rd voltage (Δ V3) is finally applied to the 3 rd attraction section 43 (fig. 5 d).
Accordingly, the mask M is attracted to the electrostatic chuck 24 from the side of the mask M corresponding to the 1 st attraction section 41 toward the 3 rd attraction section 43 (i.e., the mask M is attracted in the X direction) through the center of the mask M, and the mask M is attracted to the electrostatic chuck 24 smoothly without leaving wrinkles in the center of the mask M.
In the present embodiment, the 3 rd voltage (Δ V3) is applied in a state where the electrostatic chuck 24 is close to or in contact with the mask M, but the 3 rd voltage (Δ V3) may be applied before or during the electrostatic chuck 24 starts to descend toward the mask M.
At a predetermined timing after the completion of the process of attracting the mask M to the electrostatic chuck 24, the voltage control unit 32 decreases the voltage applied to the electrode portion of the electrostatic chuck 24 from the 3 rd voltage (Δ V3) to the 4 th voltage (Δ V4) which is lower than the 3 rd voltage (Δ V3), as shown in fig. 5 e.
The 4 th voltage (Δ V4) is a suction maintaining voltage for maintaining the suction state of the mask M sucked to the electrostatic chuck 24 through the substrate S, and is lower than the 3 rd voltage (Δ V3) when the mask M is sucked to the electrostatic chuck 24. When the voltage applied to the electrostatic chuck 24 is reduced to the 4 th voltage (Δ V4), the amount of polarization charge induced in the mask M in response thereto is reduced as compared to the case where the 3 rd voltage (Δ V3) is applied, but the mask can be maintained in the adsorbed state even if the 4 th voltage (Δ V4) lower than the 3 rd voltage (Δ V3) is applied after the mask M is adsorbed to the electrostatic chuck 24 by the 3 rd voltage (Δ V3) once.
In this way, by reducing the voltage applied to the electrode portion of the electrostatic chuck 24 to the 4 th voltage (Δ V4), the time taken to separate the mask M from the electrostatic chuck 24 can be reduced.
That is, when the mask M is to be separated from the electrostatic chuck 24, even if the voltage applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the electrostatic attraction between the electrostatic chuck 24 and the mask M does not disappear immediately, and it takes a considerable time (in some cases, several minutes or so) to disappear the electric charge induced in the interface between the substrate S and the mask M. In particular, when the mask M is attracted to the electrostatic chuck 24, a sufficiently large voltage is generally applied to reliably attract the mask M and to shorten the time taken for attraction, but a considerable time is required from such a 3 rd voltage until the mask M is in a state in which the mask M can be separated.
In the present embodiment, in order to prevent an increase in the overall process time (tact) due to the time taken to separate the mask M from the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced to the 4 th voltage (Δ V4) at a predetermined timing after the mask M is adsorbed to the electrostatic chuck 24.
In the illustrated embodiment, the voltages applied to the 1 st to 3 rd chucking sections 41 to 43 of the electrostatic chuck 24 are simultaneously decreased to the 4 th voltage (Δ V4), but the present invention is not limited to this, and the timing of decreasing to the 4 th voltage (Δ V4) and the magnitude of the applied 4 th voltage (Δ V4) may be different for different chucking sections. For example, the voltage may be decreased from the 1 st adsorption part 41 to the 3 rd adsorption part 43 to the 4 th voltage (Δ V4).
In this way, in a state where the mask M is attracted to the electrostatic chuck 24 via the substrate S, a film forming step is performed in which the vapor deposition material evaporated from the vapor deposition source 25 is formed on the substrate S via the mask M. In the present embodiment, the mask M is held by the electrostatic attraction force of the electrostatic chuck 24, but the present invention is not limited to this, and the mask M may be more reliably brought into close contact with the substrate S by providing a magnet plate on the electrostatic chuck 24 and applying a magnetic force to the metal mask M by the magnet plate.
(separation of the substrate S and the mask M from the electrostatic chuck 24)
When the film forming process is completed with the substrate S and the mask M attracted to the electrostatic chuck 24, the attracted substrate S and the mask M are separated from the electrostatic chuck 24 by controlling the voltage applied to the electrostatic chuck 24.
Fig. 6 shows a process of separating the substrate S and the mask M from the electrostatic chuck 24.
As shown in fig. 6a, the voltage controller 32 changes the voltage applied to the electrode portion of the electrostatic chuck 24 from the 4 th voltage (Δ V4) which is the above-mentioned chucking maintenance voltage to the 5 th voltage (Δ V5) at which the mask M can be separated. Here, the 5 th voltage (Δ V5) is a mask separating voltage for separating only the mask M sucked through the substrate S while maintaining the suction state of the electrostatic chuck 24 to the substrate S. Therefore, the 5 th voltage (Δ V5) is a voltage having a magnitude lower than the 4 th voltage (Δ V4) applied when the mask M is held by suction on the electrostatic chuck 24 and, of course, lower than the 3 rd voltage (Δ V3) applied when the mask M is held by suction on the electrostatic chuck 24. The 5 th voltage (Δ V5) is a voltage of a magnitude that can maintain the suction state of the electrostatic chuck 24 with respect to the substrate S even if the mask M is separated.
For example, the 5 th voltage (Δ V5) may be a voltage having substantially the same magnitude as the 2 nd voltage (Δ V2). However, the present embodiment is not limited thereto, and the 5 th voltage (Δ V5) may have a magnitude higher than the 2 nd voltage (Δ V2) or lower than the 2 nd voltage (Δ V2) as long as only the mask M can be separated while maintaining the suction state of the electrostatic chuck 24 to the substrate S. However, in this case, the 5 th voltage (Δ V5) also has a lower magnitude than the 3 rd voltage (Δ V3) and the 4 th voltage (Δ V4).
When the voltage applied to the electrostatic chuck 24 is reduced to the 5 th voltage (Δ V5) which is substantially the same as the 2 nd voltage (Δ V2), the amount of charge induced in the mask M is reduced to substantially the same extent as when the 2 nd voltage (Δ V2) is applied. As a result, the mask M is separated from the electrostatic chuck 24 without maintaining the suction state of the mask M, while the suction state of the electrostatic chuck 24 to the substrate S is maintained.
Although not shown in detail, in the step of fig. 6a in which the voltage applied to the electrostatic chuck 24 is decreased to the 5 th voltage (Δ V5) which is the mask separation voltage, it is preferable to control the timing of decreasing to the 5 th voltage (Δ V5) to be different for different suction portions of the electrostatic chuck 24. In particular, as described above, in the step of attracting the mask M, when the mask attracting voltage (Δ V3) is sequentially applied from the 1 st attracting part 41 to the 3 rd attracting part 43 and attracted (see fig. 5b to 5d), it is preferable to similarly control so that the 5 th voltage (Δ V5) as the mask detaching voltage is sequentially applied from the 1 st attracting part 41 to the 3 rd attracting part 43 even when the mask M is detached.
That is, control is performed so that the separation voltage is applied first to the region to which the clamping voltage is applied first.
Since the period of time for which the mask M is attracted to the electrostatic chuck 24 is longer in the region of the mask M corresponding to the electrostatic chuck electrode portion to which the attraction voltage is first applied (in the above example, the 1 st attraction portion 41) than in the region of the mask M corresponding to the electrostatic chuck electrode portion to which the attraction voltage is subsequently applied (in the above example, the 3 rd attraction portion 43), the amount of polarization charge remaining in the region is also large.
In the embodiment of the present invention, by controlling the mask separation voltage (Δ V5) to be applied in order from the region having the relatively long adsorption period and the large magnitude of the polarization charge amount, the time from the electrostatic chuck 24 to the separation of the entire mask M can be further shortened. In addition, by sequentially expanding the region to which the mask separation voltage (Δ V5) is applied from the region having a large magnitude based on the amount of the absorbed polarization charge, the timing of separation from the electrostatic chuck 24 in the mask M surface can be made uniform.
On the other hand, the timing of the voltage drop to the 5 th voltage (Δ V5) may be different for different suction portions of the electrostatic chuck 24, and the magnitude of the applied 5 th voltage (Δ V5) may be changed for different suction portions. That is, in the case of the above example, it is also possible to control so that a large mask separation voltage (Δ V5) is applied to the electrostatic chuck electrode portion (1 st attraction portion 41) to which the attraction voltage is applied first, and a small mask separation voltage (Δ V5) is applied to the electrostatic chuck electrode portion (3 rd attraction portion 43) to which the attraction voltage is applied later. As described above, the same effect can be obtained even if the control is performed such that the magnitude of the 5 th voltage (Δ V5) applied as the mask separation voltage is different for different attraction regions in the order in which the attraction voltages are applied within the range of the voltage at which the mask separation can be performed.
Returning to fig. 6, when the mask M is separated and only the substrate S is held by the electrostatic chuck 24, the electrostatic chuck 24 on which the substrate S is held is raised by the electrostatic chuck Z actuator 28 (fig. 6 b).
Next, the voltage controller 32 changes the voltage applied to the electrode portion of the electrostatic chuck 24 from the 5 th voltage (Δ V5) to the 6 th voltage (Δ V6) (fig. 6 c). Here, the 6 th voltage (Δ V6) is a substrate separation voltage for separating the substrate S adsorbed on the electrostatic chuck 24 from the electrostatic chuck 24. Therefore, the 6 th voltage (Δ V6) is a voltage having a magnitude lower than the 5 th voltage (Δ V5) applied when only the substrate S is held by suction by the electrostatic chuck 24.
For example, the voltage control unit 32 may apply a zero (0) voltage (i.e., off) to the electrode portion of the electrostatic chuck 24 as the 6 th voltage (Δ V6), or apply a voltage of the opposite polarity as the 6 th voltage (Δ V6). As a result, the polarization charges induced in the substrate S are removed, and the substrate S is separated from the electrostatic chuck 24.
Although not shown in detail, in the step of fig. 6c in which the voltage applied to the electrostatic chuck 24 is reduced to the 6 th voltage (Δ V6) which is the substrate separation voltage, the timing of reducing the voltage to the 6 th voltage (Δ V6) may be controlled so as to be different for different suction portions of the electrostatic chuck 24 or the magnitude of the applied 6 th voltage (Δ V6) may be controlled so as to be different for different suction portions, similarly to the case where the mask separation voltage (5 th voltage Δ V5) is applied.
That is, when the substrate S is sequentially attracted by applying the substrate attraction voltage (Δ V1) from the 1 st attraction part 41 to the 3 rd attraction part 43 in the step of attracting the substrate S (see fig. 4b to 4d), it is preferable to control the substrate separation voltage (Δ V6) from the 1 st attraction part 41 to the 3 rd attraction part 43 in the same manner as in the case of detaching the substrate S, or to vary the magnitude of the substrate separation voltage (Δ V6) for different attraction regions in the order of attraction voltage application within the voltage range in which the substrate can be detached.
Accordingly, as in the case of the above-described mask M separation, the time required for separating the entire substrate S from the electrostatic chuck 24 can be further shortened, and the timing of separation from the electrostatic chuck 24 in the surface of the substrate S can be made uniform.
In the above, the example in which the timing and the magnitude of the application of the 5 th voltage (Δ V5) as the mask separation voltage and the 6 th voltage (Δ V6) as the substrate separation voltage are controlled to be different for different adsorption regions has been described, but the present invention is not limited thereto. That is, in the present invention, as described above, when the mask separating voltage and the substrate separating voltage are set to have different magnitudes and are sequentially applied at different stages so that the mask M is separated from the electrostatic chuck 241 time and then the substrate M is separated twice, the application of the mask separating voltage and the application of the substrate separating voltage to the plurality of chucking regions of the electrostatic chuck 24 may be controlled so that the voltages applied to the 1 st chucking part 41 to the 3 rd chucking part 43 are simultaneously reduced to the 5 th voltage (Δ V5) or the 6 th voltage (Δ V6), respectively.
Hereinafter, control of a voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 in the process of holding the substrate S and the mask M by the electrostatic chuck 24 by suction will be described with reference to fig. 7.
First, in order to attract the substrate S to the electrostatic chuck 24, the 1 st voltage (Δ V1) is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 at a predetermined timing (t 1).
The 1 st voltage (Δ V1) is a voltage that is large enough to obtain an electrostatic attraction force sufficient to attract the substrate S to the electrostatic chuck 24, and is preferably as large as possible in order to shorten the time taken from the application of the 1 st voltage to the electrode portion or sub-electrode portion of the electrostatic chuck 24 to the generation of the polarization charge on the substrate S. For example, it is preferable to apply the maximum voltage (Δ Vmax) that can be applied by the voltage application unit 31.
Next, after the substrate S is attracted to the electrostatic chuck 24 with a sufficient electrostatic attraction force by the polarized charge induced on the substrate S by the applied 1 st voltage (t: t2), the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to the 2 nd voltage (Δ V2). The 2 nd voltage (Δ V2) may be, for example, the lowest voltage (Δ Vmin) that can maintain the state where the substrate S is attracted to the electrostatic chuck 24.
Next, in order to attract the mask M to the electrostatic chuck 24 via the substrate S, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is increased to the 3 rd voltage (Δ V3) (t — t 3). The 3 rd voltage (Δ V3) is a voltage for attracting the mask M to the electrostatic chuck 24 via the substrate S, and therefore preferably has a magnitude equal to or greater than the 2 nd voltage (Δ V2), and more preferably a maximum voltage (Δ Vmax) that can be applied by the voltage application unit 31 in consideration of the process time.
In the present embodiment, in order to shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to the small 4 th voltage (Δ V4) (t ═ t4) without being maintained at the 3 rd voltage (Δ V3). However, in order to maintain the state where the mask M is attracted to the electrostatic chuck 24 through the substrate S, the 4 th voltage (Δ V4) is preferably equal to or higher than the 2 nd voltage (Δ V2) required to maintain the state where the substrate S is attracted to the electrostatic chuck 24.
After the film formation process is completed (t5), in order to separate the mask M from the electrostatic chuck 24, first, the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to the 5 th voltage (Δ V5) at which only the attracted state of the substrate S can be maintained. The 5 th voltage (Δ V5) is a voltage having substantially the same magnitude as the 2 nd voltage (Δ V2) required to keep only the substrate S attached to the electrostatic chuck 24 for separating the mask M. For example, the 5 th voltage (Δ V5) is preferably a minimum voltage (Δ Vmin) required to keep only the substrate S attracted to the electrostatic chuck 24 in order to separate the mask M.
Thus, after the mask M is separated, the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to zero (0) (i.e., turned off) or a voltage of opposite polarity (t6) is applied. Thereby, the polarization charges induced on the substrate S are removed, and the substrate S can be separated from the electrostatic chuck 24.
[ film Forming Process ]
Hereinafter, a film formation method using voltage control of the electrostatic chuck according to the present embodiment will be described.
In a state where the mask M is placed on the mask support unit 23 in the vacuum chamber 21, the substrate is carried into the vacuum chamber 21 of the film deposition apparatus 11 by the transfer robot 14 of the transfer chamber 13.
The hand of the transfer robot 14 that has entered the vacuum chamber 21 descends, and the substrate S is placed on the support portion of the substrate support unit 22.
Next, the electrostatic chuck 24 is lowered toward the substrate S, and after sufficiently approaching or coming into contact with the substrate S, the 1 st voltage (Δ V1) is applied to the electrostatic chuck 24, and the substrate S is attracted.
In one embodiment of the present invention, in order to maximally secure a time required to separate the substrate from the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced from the 1 st voltage (Δ V1) to the 2 nd voltage (Δ V2) after the adsorption of the substrate to the electrostatic chuck 24 is completed. Even if the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage (Δ V2), since it takes time until the polarized charges induced in the substrate by the 1 st voltage (Δ V1) are discharged, the attraction force of the electrostatic chuck 24 to the substrate can be maintained in the subsequent process.
In a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative positional deviation of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off the electrostatic chuck 24 during the lowering of the substrate attracted to the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is lowered to the 2 nd voltage (Δ V2) after the lowering of the substrate is completed (i.e., immediately before the start of the alignment process described later).
When the substrate S is lowered to the measurement position, the alignment marks formed on the substrate S and the mask M are photographed by the alignment camera 20, and the relative positional deviation of the substrate and the mask is measured. In another embodiment of the present invention, in order to further improve the accuracy of the measurement process of the relative position between the substrate and the mask, the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage after the measurement process for alignment is completed (during the alignment process). That is, the accuracy of the measurement process can be improved by imaging the alignment marks of the substrate and the mask in a state where the electrostatic chuck 24 strongly attracts the substrate (a state where the substrate is more smoothly maintained) by the 1 st voltage (Δ V1).
As a result of the measurement, if it is found that the relative positional deviation of the substrate with respect to the mask exceeds the threshold value, the substrate S in the state of being attracted to the electrostatic chuck 24 is moved in the horizontal direction (XY θ direction), and the substrate is adjusted (aligned) with respect to the mask. In another embodiment of the present invention, after the completion of the position adjustment step, the voltage applied to the electrostatic chuck 24 is reduced to the 2 nd voltage (Δ V2). This can further improve the accuracy over the entire alignment process (relative position measurement or position adjustment).
After the alignment step, the mask M is attracted to the electrostatic chuck 24 via the substrate S. Therefore, the 3 rd voltage (Δ V3) having a magnitude equal to or greater than the 2 nd voltage is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24.
After the mask M suction step is completed, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to the 4 th voltage (Δ V4) that is a voltage capable of maintaining the substrate and the mask in a state of being sucked to the electrostatic chuck 24. This can reduce the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process is completed.
Next, the shutter of the vapor deposition source 25 is opened, and the vapor deposition material is deposited on the substrate S through the mask.
After vapor deposition to a desired thickness, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is lowered to the 5 th voltage (Δ V5) to separate the mask M, and the substrate is raised by the electrostatic chuck Z actuator 28 in a state where only the substrate is attracted to the electrostatic chuck 24. Here, the 5 th voltage (Δ V5) is a voltage having a magnitude necessary to maintain a state where the mask M is separated and only the substrate S is attracted to the electrostatic chuck 24, and has a magnitude substantially the same as the 2 nd voltage.
Next, the hand of the transfer robot 14 enters the vacuum chamber 21 of the film deposition apparatus 11, and a voltage (Δ V6) of zero (0) or a reverse polarity is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 (t6), whereby the substrate is separated from the electrostatic chuck 24. Then, the substrate on which the vapor deposition has been completed is carried out of the vacuum chamber 21 by the transfer robot 14.
[ method for manufacturing electronic device ]
Next, an example of a method for manufacturing an electronic device using the film formation apparatus of the present embodiment will be described. Hereinafter, a structure and a manufacturing method of an organic EL display device are exemplified as an example of an electronic device.
First, an organic EL display device to be manufactured is explained. Fig. 8(a) shows an overall view of the organic EL display device 60, and fig. 8(b) shows a cross-sectional structure of 1 pixel.
As shown in fig. 8(a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of an organic EL display device 60. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel herein refers to the smallest unit that can display a desired color in the display region 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is configured by a combination of the 1 st light-emitting element 62R, the 2 nd light-emitting element 62G, and the 3 rd light-emitting element 62B which display different light emissions from each other. The pixel 62 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be configured by a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as at least 1 color or more is provided.
Fig. 8(B) is a partial cross-sectional view at the line a-B of fig. 8 (a). The pixel 62 includes an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. Among them, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to an organic layer. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red light, green light, and blue light, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, an insulating layer 69 is provided between the anodes 64 in order to prevent the anodes 64 and the cathodes 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
In fig. 8(b), the hole transport layer 65 and the electron transport layer 67 are illustrated as one layer, but a plurality of layers including a hole blocking layer and an electron blocking layer may be formed depending on the structure of the organic EL display element. Further, a hole injection layer having a band structure in which holes can be smoothly injected from the anode 64 into the hole transport layer 65 can be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.
Next, an example of a method for manufacturing the organic EL display device will be specifically described.
First, a circuit (not shown) for driving the organic EL display device and a substrate 63 on which an anode 64 is formed are prepared.
An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the insulating layer 69 is formed by patterning the acrylic resin so as to form an opening in the portion where the anode 64 is formed by photolithography. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.
The substrate 63 on which the insulating layer 69 is patterned is carried into the 1 st organic material film forming apparatus, and the substrate is held by the substrate holding means and the electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display region. The hole transport layer 65 is formed by vacuum evaporation. In practice, since the hole transport layer 65 is formed to have a size larger than that of the display region 61, a high-definition mask is not required.
Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into the 2 nd organic material film forming apparatus and held by the substrate holding unit and the electrostatic chuck. The substrate is placed on the mask by aligning the substrate with the mask, and a light-emitting layer 66R that emits red light is formed on a portion of the substrate 63 where an element that emits red light is disposed.
Similarly to the formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by the 3 rd organic material film-forming device, and the light-emitting layer 66B emitting blue light is formed by the 4 th organic material film-forming device. After the completion of the formation of the light-emitting layers 66R, 66G, and 66B, the electron transport layer 67 is formed in the entire display region 61 by the 5 th film forming apparatus. The electron transport layer 67 is formed as a common layer for the light emitting layers 66R, 66G, and 66B of 3 colors.
The substrate on which the electron transport layer 67 has been formed is moved to a metallic vapor deposition material film forming apparatus, and the cathode 68 is formed.
According to the present invention, after the substrate and the mask are attracted to the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced at a predetermined timing. After the film formation process is completed, when the substrate and the mask are sequentially separated from the electrostatic chuck, the attraction to the substrate is maintained, but the mask is separated from the electrostatic chuck 24 by lowering the voltage to a voltage that can separate only the mask, and then the substrate is separated from the electrostatic chuck 24 by lowering the voltage to zero (0) (i.e., turning off) or by applying a voltage of the opposite polarity. As a result, the time taken to separate the substrate and/or the mask from the electrostatic chuck 24 can be shortened, and the process time can be reduced. Further, by separating the substrate and the mask after film formation from the electrostatic chuck in this order, damage to the film formation surface that may occur during the separation process can also be prevented.
Thereafter, the substrate is moved to a plasma CVD apparatus to form a protective film 70, thereby completing the organic EL display apparatus 60.
When the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light-emitting layer made of an organic EL material may be deteriorated by moisture and oxygen. Therefore, in this example, the substrate is carried in and out between the film deposition apparatuses in a vacuum atmosphere or an inert gas atmosphere.
The above embodiment shows an example of the present invention, but the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea thereof. For example, in the above embodiment, a description has been given mainly of a mode in which a substrate and a mask are attracted to an electrostatic chuck in a film formation chamber of each film formation apparatus to form a film, and when the film formation is completed, the mask separation voltage (Δ V5) and the substrate separation voltage (Δ V6) are sequentially applied, and after the mask and the substrate are sequentially separated from the electrostatic chuck, the separated substrate is moved to another film formation chamber and subjected to the same process to perform an additional film formation step. In this way, in the case of a mode in which a plurality of film forming processes are sequentially performed while a substrate is moved between a series of a plurality of film forming apparatuses, the present invention can be applied to a mode in which, in each intermediate-stage film forming apparatus, when a film forming process in the film forming apparatus is completed, only a mask is separated from an electrostatic chuck by applying the mask separation voltage (Δ V5), and the electrostatic chuck itself having the mask separated, that is, the electrostatic chuck having the substrate attracted thereto is moved to a subsequent-stage film forming apparatus to attract and form a new mask, and when a film forming process in a film forming apparatus that performs a film forming process in a final stage in a series of film forming processes is finally completed, the mask and the substrate after the film forming process are sequentially separated from the electrostatic chuck by applying the mask separation voltage (Δ V5) and the substrate separation voltage (Δ V6).

Claims (11)

1. An electrostatic chuck system, characterized in that,
the electrostatic chuck system includes:
an electrostatic chuck comprising an electrode portion;
a voltage applying unit configured to apply a voltage to the electrode unit of the electrostatic chuck; and
a voltage control section for controlling voltage application based on the voltage application section,
the voltage control unit controls the voltage applying unit to apply, to an electrode portion of the electrostatic chuck to which a 1 st adherend is adhered and to which a 2 nd adherend is adhered via the 1 st adherend, a 1 st voltage for separating the 2 nd adherend from the 1 st adherend and a 2 nd voltage for separating the 1 st adherend from the electrode portion in this order.
2. The electrostatic chuck system of claim 1,
the 1 st voltage is a voltage at which only the 2 nd adsorbate is separated from the 1 st adsorbate while maintaining the 1 st adsorbate adsorbed on the electrode portion.
3. The electrostatic chuck system of claim 2,
the 1 st voltage is greater than the 2 nd voltage.
4. The electrostatic chuck system of claim 3,
the 2 nd voltage is zero voltage or a voltage having a polarity opposite to a suction voltage when the 1 st and 2 nd suction objects are attracted to the electrostatic chuck.
5. A film forming apparatus for forming a film on a substrate with a mask interposed therebetween,
the film forming apparatus includes an electrostatic chuck system for adsorbing a substrate as a 1 st adherend and a mask as a 2 nd adherend,
the electrostatic chuck system according to any one of claims 1 to 4.
6. A separation method for separating an adherend from an electrode portion of an electrostatic chuck including the electrode portion,
the separation method comprises the following steps:
a step of applying a 1 st voltage for separating the 2 nd adherend from the 1 st adherend to an electrode portion of the electrostatic chuck to which the 1 st adherend is adhered and to which the 2 nd adherend is adhered via the 1 st adherend; and
a step of applying a 2 nd voltage for separating the 1 st adsorbed object from the electrode section to the electrode section after the 1 st voltage application step.
7. The separation method according to claim 6,
the 1 st voltage is a voltage at which only the 2 nd adsorbate is separated from the 1 st adsorbate while maintaining the 1 st adsorbate adsorbed on the electrode portion.
8. The separation method according to claim 7,
the 1 st voltage is greater than the 2 nd voltage.
9. The separation method according to claim 8,
the 2 nd voltage is zero voltage or a voltage having a polarity opposite to a suction voltage when the 1 st and 2 nd suction objects are attracted to the electrostatic chuck.
10. A film forming method for forming a film of a vapor deposition material on a substrate through a mask,
the film forming method includes:
a step of carrying the mask into the vacuum container;
a stage of carrying the substrate into the vacuum container;
applying a 1 st adsorption voltage to an electrode part of the electrostatic chuck to make the substrate adsorbed on the electrostatic chuck;
applying a 2 nd adsorption voltage to the electrode part, and adsorbing the mask to the electrostatic chuck through the substrate;
a step of evaporating a vapor deposition material in a state where the substrate and the mask are attracted to the electrostatic chuck, and forming a film of the vapor deposition material on the substrate through the mask; and
a step of sequentially separating the mask as a 2 nd adherend and the substrate as a 1 st adherend from the electrostatic chuck by using the separation method according to any one of claims 6 to 9.
11. A method of manufacturing an electronic device, characterized in that,
an electronic device manufactured by using the film formation method according to claim 10.
CN201910889616.1A 2018-09-21 2019-09-20 Electrostatic chuck system, film forming apparatus, method for separating adsorbed object, film forming method, and method for manufacturing electronic device Pending CN110943026A (en)

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KR1020180114253A KR20200034455A (en) 2018-09-21 2018-09-21 Electrostatic chuk system, apparatus for forming film, separation method of attracted body, method for forming film, and manufacturing method of electronic device
KR10-2018-0114253 2018-09-21

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