KR102427823B1 - 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 - Google Patents

정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 Download PDF

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KR102427823B1
KR102427823B1 KR1020180066582A KR20180066582A KR102427823B1 KR 102427823 B1 KR102427823 B1 KR 102427823B1 KR 1020180066582 A KR1020180066582 A KR 1020180066582A KR 20180066582 A KR20180066582 A KR 20180066582A KR 102427823 B1 KR102427823 B1 KR 102427823B1
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South Korea
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potential difference
electrostatic chuck
substrate
electrode
mask
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Korean (ko)
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KR20190140156A (ko
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카즈히토 카시쿠라
히로시 이시이
테루유키 호소야
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캐논 톡키 가부시키가이샤
주식회사 아오이
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Priority to KR1020180066582A priority Critical patent/KR102427823B1/ko
Priority to JP2018221716A priority patent/JP7278541B2/ja
Priority to CN201811560378.1A priority patent/CN110578118A/zh
Publication of KR20190140156A publication Critical patent/KR20190140156A/ko
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    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H01L21/02631—
    • H01L21/67017—
    • H01L51/001—
    • H01L51/56—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180066582A 2018-06-11 2018-06-11 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 Active KR102427823B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020180066582A KR102427823B1 (ko) 2018-06-11 2018-06-11 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
JP2018221716A JP7278541B2 (ja) 2018-06-11 2018-11-27 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
CN201811560378.1A CN110578118A (zh) 2018-06-11 2018-12-20 静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180066582A KR102427823B1 (ko) 2018-06-11 2018-06-11 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법

Publications (2)

Publication Number Publication Date
KR20190140156A KR20190140156A (ko) 2019-12-19
KR102427823B1 true KR102427823B1 (ko) 2022-07-29

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JP (1) JP7278541B2 (OSRAM)
KR (1) KR102427823B1 (OSRAM)
CN (1) CN110578118A (OSRAM)

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KR102411995B1 (ko) * 2018-09-21 2022-06-21 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착 및 분리방법, 성막방법 및 전자 디바이스의 제조방법
KR102501609B1 (ko) * 2019-12-20 2023-02-17 캐논 톡키 가부시키가이샤 성막 장치, 이를 사용한 성막 방법, 및 전자 디바이스의 제조방법
CN113005398B (zh) * 2019-12-20 2023-04-07 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN113005403B (zh) * 2019-12-20 2023-06-20 佳能特机株式会社 成膜装置、使用其的成膜方法及电子器件的制造方法
KR102788970B1 (ko) * 2019-12-23 2025-03-28 캐논 톡키 가부시키가이샤 성막 장치, 성막 방법, 및 전자 디바이스의 제조방법
KR20210081589A (ko) * 2019-12-24 2021-07-02 캐논 톡키 가부시키가이샤 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법
CN113093416B (zh) * 2021-04-02 2024-04-12 曲面超精密光电(深圳)有限公司 一种超长宽比平面全贴合方法及其设备
CN119411099A (zh) * 2024-11-15 2025-02-11 京东方科技集团股份有限公司 气相沉积设备

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JP2011195907A (ja) 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
US20150343580A1 (en) 2014-06-02 2015-12-03 Applied Materials, Inc. Electromagnetic chuck for oled mask chucking

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JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法
JP2011195907A (ja) 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
US20150343580A1 (en) 2014-06-02 2015-12-03 Applied Materials, Inc. Electromagnetic chuck for oled mask chucking

Also Published As

Publication number Publication date
JP7278541B2 (ja) 2023-05-22
CN110578118A (zh) 2019-12-17
JP2019216230A (ja) 2019-12-19
KR20190140156A (ko) 2019-12-19

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