KR102397557B1 - 전계 흡수형 변조기 집적 레이저 - Google Patents

전계 흡수형 변조기 집적 레이저 Download PDF

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Publication number
KR102397557B1
KR102397557B1 KR1020200137564A KR20200137564A KR102397557B1 KR 102397557 B1 KR102397557 B1 KR 102397557B1 KR 1020200137564 A KR1020200137564 A KR 1020200137564A KR 20200137564 A KR20200137564 A KR 20200137564A KR 102397557 B1 KR102397557 B1 KR 102397557B1
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KR
South Korea
Prior art keywords
active layer
region
optical signal
thickness
dfb
Prior art date
Application number
KR1020200137564A
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English (en)
Korean (ko)
Other versions
KR20220053734A (ko
Inventor
유준상
Original Assignee
주식회사 오이솔루션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 오이솔루션 filed Critical 주식회사 오이솔루션
Priority to KR1020200137564A priority Critical patent/KR102397557B1/ko
Priority to PCT/KR2021/008862 priority patent/WO2022085897A1/fr
Publication of KR20220053734A publication Critical patent/KR20220053734A/ko
Application granted granted Critical
Publication of KR102397557B1 publication Critical patent/KR102397557B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
KR1020200137564A 2020-10-22 2020-10-22 전계 흡수형 변조기 집적 레이저 KR102397557B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020200137564A KR102397557B1 (ko) 2020-10-22 2020-10-22 전계 흡수형 변조기 집적 레이저
PCT/KR2021/008862 WO2022085897A1 (fr) 2020-10-22 2021-07-12 Laser modulé par électro-absorption

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020200137564A KR102397557B1 (ko) 2020-10-22 2020-10-22 전계 흡수형 변조기 집적 레이저

Publications (2)

Publication Number Publication Date
KR20220053734A KR20220053734A (ko) 2022-05-02
KR102397557B1 true KR102397557B1 (ko) 2022-05-17

Family

ID=81290585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200137564A KR102397557B1 (ko) 2020-10-22 2020-10-22 전계 흡수형 변조기 집적 레이저

Country Status (2)

Country Link
KR (1) KR102397557B1 (fr)
WO (1) WO2022085897A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464359B1 (ko) * 2002-03-11 2005-01-03 삼성전자주식회사 파장 가변형 레이저 장치
KR100537079B1 (ko) * 2002-12-18 2005-12-16 한국전자통신연구원 선택적 면적 결정성장기법을 이용한 양자점 형성방법 및이를 이용하여 제조된 광소자
KR100584332B1 (ko) * 2004-01-09 2006-05-26 삼성전자주식회사 전계흡수형 변조기가 집적된 레이저 장치 및 그 제조방법
KR20130128651A (ko) * 2012-05-17 2013-11-27 한국전자통신연구원 전계흡수형 변조기 레이저
KR20180028331A (ko) * 2016-09-08 2018-03-16 엘지이노텍 주식회사 전계 흡수 변조기 및 광 통신 시스템

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Publication number Publication date
KR20220053734A (ko) 2022-05-02
WO2022085897A1 (fr) 2022-04-28

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