WO2022085897A1 - Laser modulé par électro-absorption - Google Patents

Laser modulé par électro-absorption Download PDF

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Publication number
WO2022085897A1
WO2022085897A1 PCT/KR2021/008862 KR2021008862W WO2022085897A1 WO 2022085897 A1 WO2022085897 A1 WO 2022085897A1 KR 2021008862 W KR2021008862 W KR 2021008862W WO 2022085897 A1 WO2022085897 A1 WO 2022085897A1
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Prior art keywords
region
thickness
active layer
width
optical signal
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Application number
PCT/KR2021/008862
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English (en)
Korean (ko)
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유준상
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(주)오이솔루션
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Publication of WO2022085897A1 publication Critical patent/WO2022085897A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Definitions

  • Embodiments relate to field absorption modulator integrated lasers.
  • a signal wave output from a single-wavelength laser (Distributed Feedback; DFB) as its light source is directly modulated, that is, a signal output by applying AC to the active layer of the DFB is directly modulated and used, or Alternatively, the output of the laser is fixed by combining the DFB and an external modulator, but the output light is modulated at a high speed in the required frequency range through an external modulator.
  • DFB Distributed Feedback
  • EML Electro-absorption Modulated Laser
  • FIG. 1 is a view showing a field absorption modulator integrated laser according to the prior art.
  • the conventional integrated laser field absorption type modulator is a field absorption modulator that modulates the DFB 100 and the signal wave output from the DFB 100 using the difference in absorption according to the electric field of the semiconductor ( Electro-absorption Modulator; EAM (300) is combined.
  • An embodiment provides a field absorption modulator integrated laser capable of obtaining a desired extinction ratio and modulation rate.
  • the problem to be solved in the embodiment is not limited thereto, and it will be said that the purpose or effect that can be grasped from the method of solving the problem described below or the embodiment is also included.
  • a field absorption modulator integrated laser includes: a substrate; a DFB disposed on the substrate and configured to output an optical signal of a single wavelength; and an EAM disposed on the substrate, including an active layer having at least one of a thickness and a width different from a thickness and width of a partial region of the entire region, and modulating an optical signal output from the DFB through the active layer.
  • the active layer is divided into a first region having a constant thickness and width, and a second region extending from the first region to receive an optical signal output from the DFB, and at least one of the thickness and width of the second region is determined from the second region. It may be different from area 1.
  • the second region may be formed to extend from the first region, and may have a tapered structure in which at least one of a thickness and a width increases in at least one direction.
  • At least one of a thickness and a width of a first surface to which the optical signal is input is larger than a second surface through which the optical signal is output, and the thickness and width of the second surface are the same as the first area. can do.
  • the length of the second region may be less than or equal to that of the first region.
  • the second region may be formed using a selective area growth (SAG) effect.
  • SAG selective area growth
  • the active layer may be formed of a multiple quantum well (MQW).
  • MQW multiple quantum well
  • a field absorption modulator integrated laser includes a first cladding layer; an active layer disposed on the first cladding layer and modulating an optical signal output from the DFB, wherein at least one of a thickness and a width of a partial region of the entire region is different; a second cladding layer disposed on the active layer; an upper electrode disposed on the second cladding layer; and a lower electrode disposed under the first cladding layer.
  • the active layer of the EAM is divided into a first region and a second region, the first region has a constant thickness, and the second region extends from the first region using the SAG effect to gradually increase the thickness
  • a tapered structure such as the one with
  • FIG. 1 is a view showing a field absorption modulator integrated laser according to the prior art.
  • FIG. 2 is a diagram illustrating a field absorption modulator integrated laser according to an embodiment of the present invention.
  • FIG. 3 is a view for explaining the shape of the second active layer shown in FIG. 2 .
  • 4A to 4C are diagrams for comparing and explaining the performance of the second active layer according to the embodiment.
  • 5A to 5B are views illustrating various structures of a second active layer according to an embodiment.
  • 6A to 6B are diagrams for comparatively explaining the field absorption modulator integrated laser.
  • the singular form may also include the plural form unless otherwise specified in the phrase, and when it is described as “at least one (or more than one) of A and (and) B, C”, it is combined with A, B, and C It may include one or more of all possible combinations.
  • a component when it is described that a component is 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also with the component It may also include a case of 'connected', 'coupled' or 'connected' due to another element between the other elements.
  • the top (above) or bottom (below) is one as well as when two components are in direct contact with each other. Also includes a case in which another component as described above is formed or disposed between two components.
  • the meaning of not only the upward direction but also the downward direction based on one component may be included.
  • the active layer of the EAM is divided into a first region and a second region, the first region has a constant thickness, and the second region extends from the first region using the SAG effect to gradually increase the thickness.
  • a new EML structure is proposed to be formed in a tapered structure.
  • FIG. 2 is a diagram illustrating a field absorption modulator integrated laser according to an embodiment of the present invention.
  • the field absorption modulator integrated laser includes a DFB 100 and an EAM 300 , but includes a lower electrode 10 , a first cladding layer 20 , and a grid layer. (grating layer) 30 , first active layer 40 , second active layer 50 , first waveguide 60 , second waveguide 62 , second cladding layer 70 , first upper electrode 80 ), the second upper electrode 90 may be included.
  • the first active layer 40 of the DFB 100 and the second active layer 50 of the EAM 300 are formed on the first clad layer 20 which becomes the substrate, and the first active layer 40 and the second active layer A first waveguide 60 may be formed between 50 .
  • the DFB 100 may output an optical signal of a single wavelength.
  • the DFB 100 may include a lower electrode 10 , a first clad layer 20 , a grid layer 30 , a first active layer 40 , a second cladding layer 70 , and a first upper electrode 80 .
  • the grating layer 30 is formed only in the region of the DFB 100 , and may provide a single wavelength, for example, 1.55 ⁇ m.
  • the first active layer 40 may be formed of a multiple quantum well (MQW).
  • a second cladding layer 70 that is a p-type cladding layer made of P-InP is disposed on the first active layer 40 , and a first upper electrode 80 that is a p-type electrode is disposed on the second clad layer 70 .
  • a contact layer may be disposed on the second cladding layer 70 , and the first upper electrode 80 may be disposed on the contact layer.
  • the DFB 100 When a forward voltage is applied to the lower electrode 10, which is an n-type electrode, and the first upper electrode 80, which is a p-type electrode, the DFB 100 generates light of a single wavelength by the grating layer 30 and the first active layer 40. signal can be output.
  • the EAM 300 may modulate an optical signal output from the DFB 100 .
  • the EAM 300 may include a lower electrode 10 , a first clad layer 20 , a second active layer 50 , a second clad layer 70 , and a second upper electrode 90 .
  • the second active layer 50 may be formed of a multiple quantum well (MQW) having a shorter wavelength than the first active layer 40 .
  • the second active layer 50 is divided into a first region 51 and a second region 52 , the first region 51 has a constant thickness, and the second region 52 is the first region 51 . ) and may be formed as a tapered structure in which the thickness is gradually increased.
  • MQW multiple quantum well
  • the second region 52 may be formed using a selective area growth (SAG) effect.
  • SAG selective area growth
  • semiconductor devices having different bandgap energies should be able to be grown on the same substrate.
  • the materials forming the thin film must be smoothly connected at the coupling portion between the different semiconductor devices so that the optical signal can be propagated without attenuation or scattering.
  • the butt growth technique is used to partially etch and remove the semiconductor layer and then re-grow another semiconductor layer.
  • a dielectric film mask is present on the first active layer, and a selective area growth (SAG) effect occurs in the second active layer by the mask. That is, the growth material does not grow in the dielectric film mask on the first active layer and moves toward the second active layer, so that the boundary portion of the second active layer is grown relatively thickly.
  • SAG selective area growth
  • the SAG effect is mainly determined by the following conditions: growth temperature, growth pressure, V/III ratio, and shape of a mask pattern. Therefore, in order to obtain good characteristics of the growth layer, it is necessary to grow the growth layer by well combining the above conditions.
  • a second cladding layer 70 that is a p-type cladding layer made of P-InP is disposed on the second active layer 50
  • a second upper electrode 90 that is a p-type electrode is disposed on the second clad layer 70 .
  • a contact layer may be disposed on the second cladding layer 70 , and the second upper electrode 90 may be disposed on the contact layer.
  • FIG. 3 is a view for explaining the shape of the second active layer shown in FIG. 2
  • FIGS. 4A to 4C are views for explaining and comparing the performance of the second active layer according to the embodiment.
  • the second active layer 50 may be divided into a first region 51 and a second region 52 .
  • the first region 51 may be formed with a constant thickness t1
  • the second region 52 may have a tapered structure extending from the first region 51 and gradually increasing in thickness.
  • the length L2 of the second region may be less than or equal to the length L1 of the first region.
  • the thickness of the first surface S1 on which the optical signal is incident is t2
  • the thickness of the second surface S2 on which the optical signal is output is the same as the thickness of the first region 51 . It may be formed by t1.
  • the EAM including the second active layer 50 since the EAM including the second active layer 50 according to the embodiment absorbs a lot of light at a portion where an optical signal is incident, a desired extinction ratio can be obtained only with a short modulator length and the length of the modulator is minimized. Thus, the modulation speed may be improved.
  • the EAM having the same length as the EAM of FIG. 4A but including the second active layer having a constant thickness may have a lower extinction ratio because light is relatively less absorbed.
  • an EAM including a second active layer having a constant thickness but a long length may obtain a desired extinction ratio, but may decrease the modulation rate.
  • the EAM according to the embodiment of FIG. 4A absorbs a lot of incident light because the thickness of the second region to which the optical signal is incident is large, it is not necessary to have a relatively increased thickness in the first region. Accordingly, in the first region, there is no need to increase the length as well as the thickness, so that the length of the entire device decreases as the length of the EAM according to the embodiment decreases.
  • 5A to 5B are views illustrating various structures of a second active layer according to an embodiment.
  • the second region of the second active layer according to the embodiment may be formed such that the thickness gradually increases from the first region, but in the eleventh direction on the first axis, for example, in the upper direction. .
  • the thickness of the second region of the second active layer according to the embodiment gradually increases from the first region, and the thickness of the second region on the second axis increases in the eleventh direction on the first axis, for example, in the upward direction.
  • Widths in the 21st and 22nd directions, for example, in the left and right directions, may also be formed to gradually increase through photolithography and etching.
  • the thickness of the second region of the second active layer increases in the upward direction or the width increases in the left and right directions as the thickness increases in the upward direction is described as an example, but it is not necessarily limited thereto, and at least one of the thickness and the width is can grow
  • 6A to 6B are diagrams for comparatively explaining the field absorption modulator integrated laser.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

Selon un mode de réalisation, l'invention concerne un laser modulé par électro-absorption. Le laser modulé par électro-absorption comprend : un substrat; un DFB disposé sur le substrat pour émettre un signal optique à longueur d'onde unique; et un EAM disposé sur le substrat, comprenant une couche active dans laquelle une partie de la totalité de la zone est formée pour présenter au moins une épaisseur différente et une largeur différente, et pour moduler, à travers la couche active, le signal optique émis par le DFB.
PCT/KR2021/008862 2020-10-22 2021-07-12 Laser modulé par électro-absorption WO2022085897A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0137564 2020-10-22
KR1020200137564A KR102397557B1 (ko) 2020-10-22 2020-10-22 전계 흡수형 변조기 집적 레이저

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WO2022085897A1 true WO2022085897A1 (fr) 2022-04-28

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030073412A (ko) * 2002-03-11 2003-09-19 삼성전자주식회사 파장 가변형 레이저 장치
KR20040054442A (ko) * 2002-12-18 2004-06-25 한국전자통신연구원 선택적 면적 결정성장기법을 이용한 양자점 형성방법 및이를 이용하여 제조된 광소자
KR20050073383A (ko) * 2004-01-09 2005-07-13 삼성전자주식회사 전계흡수형 변조기가 집적된 레이저 장치 및 그 제조방법
KR20130128651A (ko) * 2012-05-17 2013-11-27 한국전자통신연구원 전계흡수형 변조기 레이저
KR20180028331A (ko) * 2016-09-08 2018-03-16 엘지이노텍 주식회사 전계 흡수 변조기 및 광 통신 시스템

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030073412A (ko) * 2002-03-11 2003-09-19 삼성전자주식회사 파장 가변형 레이저 장치
KR20040054442A (ko) * 2002-12-18 2004-06-25 한국전자통신연구원 선택적 면적 결정성장기법을 이용한 양자점 형성방법 및이를 이용하여 제조된 광소자
KR20050073383A (ko) * 2004-01-09 2005-07-13 삼성전자주식회사 전계흡수형 변조기가 집적된 레이저 장치 및 그 제조방법
KR20130128651A (ko) * 2012-05-17 2013-11-27 한국전자통신연구원 전계흡수형 변조기 레이저
KR20180028331A (ko) * 2016-09-08 2018-03-16 엘지이노텍 주식회사 전계 흡수 변조기 및 광 통신 시스템

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KR102397557B1 (ko) 2022-05-17

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