KR102380615B1 - Euv 투영 리소그래피용 조명 시스템 - Google Patents

Euv 투영 리소그래피용 조명 시스템 Download PDF

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Publication number
KR102380615B1
KR102380615B1 KR1020217009708A KR20217009708A KR102380615B1 KR 102380615 B1 KR102380615 B1 KR 102380615B1 KR 1020217009708 A KR1020217009708 A KR 1020217009708A KR 20217009708 A KR20217009708 A KR 20217009708A KR 102380615 B1 KR102380615 B1 KR 102380615B1
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South Korea
Prior art keywords
optical unit
mirror
euv
mirrors
beam shaping
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KR1020217009708A
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Korean (ko)
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KR20210039000A (ko
Inventor
미하엘 패트라
랄프 뮐러
Original Assignee
칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70183—Zoom systems for adjusting beam diameter
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
KR1020217009708A 2013-11-22 2014-11-21 Euv 투영 리소그래피용 조명 시스템 Active KR102380615B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102013223935.1 2013-11-22
DE102013223935.1A DE102013223935A1 (de) 2013-11-22 2013-11-22 Beleuchtungssystem für die EUV-Belichtungslithographie
KR1020167016530A KR102413481B1 (ko) 2013-11-22 2014-11-21 Euv 투영 리소그래피용 조명 시스템
PCT/EP2014/075257 WO2015078776A1 (de) 2013-11-22 2014-11-21 Beleuchtungssystem für die euv-projektionslithographie

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167016530A Division KR102413481B1 (ko) 2013-11-22 2014-11-21 Euv 투영 리소그래피용 조명 시스템

Publications (2)

Publication Number Publication Date
KR20210039000A KR20210039000A (ko) 2021-04-08
KR102380615B1 true KR102380615B1 (ko) 2022-03-30

Family

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KR1020217009708A Active KR102380615B1 (ko) 2013-11-22 2014-11-21 Euv 투영 리소그래피용 조명 시스템
KR1020167016530A Active KR102413481B1 (ko) 2013-11-22 2014-11-21 Euv 투영 리소그래피용 조명 시스템

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Country Status (7)

Country Link
US (2) US9958783B2 (enExample)
EP (2) EP3467590B1 (enExample)
JP (1) JP6623156B2 (enExample)
KR (2) KR102380615B1 (enExample)
CN (2) CN105765460B (enExample)
DE (1) DE102013223935A1 (enExample)
WO (1) WO2015078776A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie
DE102014221173A1 (de) 2014-10-17 2016-04-21 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226921A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226920A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102014226918A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
TWI701517B (zh) 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 光學構件
DE102015212878A1 (de) 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Strahlführungsvorrichtung
DE102015215216A1 (de) * 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh Optisches System
US11112618B2 (en) 2015-09-03 2021-09-07 Asml Netherlands B.V. Beam splitting apparatus
DE102015012053A1 (de) * 2015-09-14 2017-03-16 M+W Group GmbH Fertigungsanlage zur Herstellung von integrierten Schaltkreisen aus Halbleiter-Wafern sowie Waffelelement für eine Fertigungsanlage
DE102015220955A1 (de) 2015-10-27 2015-12-17 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102016217426A1 (de) 2016-09-13 2017-08-24 Carl Zeiss Smt Gmbh Strahlteiler
DE102017205548A1 (de) 2017-03-31 2018-10-04 Carl Zeiss Smt Gmbh Optische Baugruppe zum Führen eines Ausgabestrahls eines Freie-Elektronen-Lasers
CN107166180A (zh) * 2017-06-14 2017-09-15 杨毅 灯具
DE102017210190A1 (de) 2017-06-19 2018-03-15 Carl Zeiss Smt Gmbh Optisches Element
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
DE102018212224A1 (de) 2018-07-23 2020-01-23 Carl Zeiss Smt Gmbh Vorrichtung zur Rückkopplung von emittierter Strahlung in eine Laserquelle
EP3627226A1 (en) * 2018-09-20 2020-03-25 ASML Netherlands B.V. Optical system, metrology apparatus and associated method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235999A (ja) * 2004-02-19 2005-09-02 Canon Inc 照明装置及び露光装置
US20070165202A1 (en) 2003-09-12 2007-07-19 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
WO2009121438A1 (de) 2008-04-03 2009-10-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die euv-mikrolithographie

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2766385A (en) * 1952-09-11 1956-10-09 Herrnring Gunther Optical image-forming plural reflecting mirror systems
JPH05114546A (ja) * 1991-10-22 1993-05-07 Toshiba Corp Ｘ線露光装置
US5268951A (en) * 1992-12-22 1993-12-07 International Business Machines Corporation X-ray beam scanning method for producing low distortion or constant distortion in x-ray proximity printing
JP3499592B2 (ja) * 1994-01-31 2004-02-23 株式会社ルネサステクノロジ 投影露光装置及びパターン転写方法
JPH09500453A (ja) * 1994-05-11 1997-01-14 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・コロラド 球面ミラーかすめ入射ｘ線光学系
JP3167095B2 (ja) * 1995-07-04 2001-05-14 キヤノン株式会社 照明装置とこれを有する露光装置や顕微鏡装置、ならびにデバイス生産方法
JP3284045B2 (ja) 1996-04-30 2002-05-20 キヤノン株式会社 Ｘ線光学装置およびデバイス製造方法
US6438199B1 (en) 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
DE19935404A1 (de) 1999-07-30 2001-02-01 Zeiss Carl Fa Beleuchtungssystem mit mehreren Lichtquellen
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
EP0955641B1 (de) * 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
TWI243287B (en) * 1999-03-12 2005-11-11 Asml Netherlands Bv Lithographic projection apparatus and device manufacturing method using the same
WO2001009684A1 (de) 1999-07-30 2001-02-08 Carl Zeiss Steuerung der beleuchtungsverteilung in der austrittspupille eines euv-beleuchtungssystems
DE10001291A1 (de) 2000-01-14 2001-07-19 Zeiss Carl Adaptronischer Spiegel
US6919951B2 (en) 2001-07-27 2005-07-19 Canon Kabushiki Kaisha Illumination system, projection exposure apparatus and device manufacturing method
US6798494B2 (en) 2001-08-30 2004-09-28 Euv Llc Apparatus for generating partially coherent radiation
US7020006B2 (en) * 2002-08-02 2006-03-28 Unity Semiconductor Corporation Discharge of conductive array lines in fast memory
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
EP1496521A1 (en) * 2003-07-09 2005-01-12 ASML Netherlands B.V. Mirror and lithographic apparatus with mirror
DE10343333A1 (de) * 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
DE10358225B3 (de) 2003-12-12 2005-06-30 Forschungszentrum Karlsruhe Gmbh Undulator und Verfahren zu dessen Betrieb
US7030963B2 (en) * 2004-05-03 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070152171A1 (en) 2005-12-30 2007-07-05 Michael Goldstein Free electron laser
US8766212B2 (en) * 2006-07-19 2014-07-01 Asml Netherlands B.V. Correction of spatial instability of an EUV source by laser beam steering
DE102006034755A1 (de) 2006-07-24 2008-01-31 Carl Zeiss Smt Ag Optische Vorrichtung sowie Verfahren zur Korrektur bzw. Verbesserung des Abbildungsverhaltens einer optischen Vorrichtung
ATE528692T1 (de) * 2006-07-28 2011-10-15 Media Lario Srl Optische multireflexionssysteme und ihre herstellung
DE102008014832A1 (de) * 2007-04-19 2008-10-23 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie
KR101602373B1 (ko) * 2008-07-11 2016-03-21 에이에스엠엘 네델란즈 비.브이. 스펙트럼 퓨리티 필터, 방사선 소스, 리소그래피 장치, 및 디바이스 제조 방법
DE102009025655A1 (de) 2008-08-27 2010-03-04 Carl Zeiss Smt Ag Optische Komponente zum Einsatz in einem Beleuchtungssystem für eine Projektionsbelichtungsanlage der EUV-Mikrolithographie
DE102009045135A1 (de) * 2009-09-30 2011-03-31 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
JP5756121B2 (ja) * 2009-12-14 2015-07-29 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系
EP2533078B1 (en) * 2011-06-09 2014-02-12 ASML Netherlands BV Radiation source and lithographic apparatus
EP3049870B1 (en) * 2013-09-25 2019-05-15 ASML Netherlands B.V. Beam splitting apparatus, lithogaphic system and method
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070165202A1 (en) 2003-09-12 2007-07-19 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
JP2005235999A (ja) * 2004-02-19 2005-09-02 Canon Inc 照明装置及び露光装置
WO2009121438A1 (de) 2008-04-03 2009-10-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die euv-mikrolithographie

Also Published As

Publication number Publication date
CN105765460A (zh) 2016-07-13
KR20210039000A (ko) 2021-04-08
EP3467590C0 (de) 2025-10-15
US9958783B2 (en) 2018-05-01
US20160252823A1 (en) 2016-09-01
CN105765460B (zh) 2018-12-28
KR102413481B1 (ko) 2022-06-27
JP6623156B2 (ja) 2019-12-18
EP3467590B1 (de) 2025-10-15
EP3467590A1 (de) 2019-04-10
US10310381B2 (en) 2019-06-04
US20180224750A1 (en) 2018-08-09
CN110068990B (zh) 2021-12-28
EP3072015B1 (de) 2019-01-02
DE102013223935A1 (de) 2015-05-28
EP3072015A1 (de) 2016-09-28
CN110068990A (zh) 2019-07-30
KR20160088421A (ko) 2016-07-25
WO2015078776A1 (de) 2015-06-04
JP2016537681A (ja) 2016-12-01

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