JP6623156B2 - Ｅｕｖ投影リソグラフィのための照明系 - Google Patents

Ｅｕｖ投影リソグラフィのための照明系 Download PDF

Info

Publication number
JP6623156B2
JP6623156B2 JP2016533541A JP2016533541A JP6623156B2 JP 6623156 B2 JP6623156 B2 JP 6623156B2 JP 2016533541 A JP2016533541 A JP 2016533541A JP 2016533541 A JP2016533541 A JP 2016533541A JP 6623156 B2 JP6623156 B2 JP 6623156B2
Authority
JP
Japan
Prior art keywords
optical unit
euv
mirror
mirrors
deflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016533541A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016537681A5 (enExample
JP2016537681A (ja
Inventor
ミハエル パトラ
ミハエル パトラ
ラルフ ミュラー
ラルフ ミュラー
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2016537681A publication Critical patent/JP2016537681A/ja
Publication of JP2016537681A5 publication Critical patent/JP2016537681A5/ja
Application granted granted Critical
Publication of JP6623156B2 publication Critical patent/JP6623156B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70183—Zoom systems for adjusting beam diameter
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
JP2016533541A 2013-11-22 2014-11-21 Ｅｕｖ投影リソグラフィのための照明系 Active JP6623156B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013223935.1A DE102013223935A1 (de) 2013-11-22 2013-11-22 Beleuchtungssystem für die EUV-Belichtungslithographie
DE102013223935.1 2013-11-22
PCT/EP2014/075257 WO2015078776A1 (de) 2013-11-22 2014-11-21 Beleuchtungssystem für die euv-projektionslithographie

Publications (3)

Publication Number Publication Date
JP2016537681A JP2016537681A (ja) 2016-12-01
JP2016537681A5 JP2016537681A5 (enExample) 2019-03-14
JP6623156B2 true JP6623156B2 (ja) 2019-12-18

Family

ID=51945892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016533541A Active JP6623156B2 (ja) 2013-11-22 2014-11-21 Ｅｕｖ投影リソグラフィのための照明系

Country Status (7)

Country Link
US (2) US9958783B2 (enExample)
EP (2) EP3072015B1 (enExample)
JP (1) JP6623156B2 (enExample)
KR (2) KR102380615B1 (enExample)
CN (2) CN110068990B (enExample)
DE (1) DE102013223935A1 (enExample)
WO (1) WO2015078776A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie
DE102014221173A1 (de) 2014-10-17 2016-04-21 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
TWI701517B (zh) 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 光學構件
DE102014226921A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226920A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102014226918A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102015212878A1 (de) 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Strahlführungsvorrichtung
DE102015215216A1 (de) * 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh Optisches System
US11112618B2 (en) 2015-09-03 2021-09-07 Asml Netherlands B.V. Beam splitting apparatus
DE102015012053A1 (de) * 2015-09-14 2017-03-16 M+W Group GmbH Fertigungsanlage zur Herstellung von integrierten Schaltkreisen aus Halbleiter-Wafern sowie Waffelelement für eine Fertigungsanlage
DE102015220955A1 (de) 2015-10-27 2015-12-17 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102016217426A1 (de) 2016-09-13 2017-08-24 Carl Zeiss Smt Gmbh Strahlteiler
DE102017205548A1 (de) * 2017-03-31 2018-10-04 Carl Zeiss Smt Gmbh Optische Baugruppe zum Führen eines Ausgabestrahls eines Freie-Elektronen-Lasers
CN107166180A (zh) * 2017-06-14 2017-09-15 杨毅 灯具
DE102017210190A1 (de) 2017-06-19 2018-03-15 Carl Zeiss Smt Gmbh Optisches Element
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
DE102018212224A1 (de) 2018-07-23 2020-01-23 Carl Zeiss Smt Gmbh Vorrichtung zur Rückkopplung von emittierter Strahlung in eine Laserquelle
EP3627226A1 (en) * 2018-09-20 2020-03-25 ASML Netherlands B.V. Optical system, metrology apparatus and associated method

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2766385A (en) * 1952-09-11 1956-10-09 Herrnring Gunther Optical image-forming plural reflecting mirror systems
JPH05114546A (ja) * 1991-10-22 1993-05-07 Toshiba Corp Ｘ線露光装置
US5268951A (en) 1992-12-22 1993-12-07 International Business Machines Corporation X-ray beam scanning method for producing low distortion or constant distortion in x-ray proximity printing
JP3499592B2 (ja) * 1994-01-31 2004-02-23 株式会社ルネサステクノロジ 投影露光装置及びパターン転写方法
WO1995031815A1 (en) * 1994-05-11 1995-11-23 The Regents Of The University Of Colorado Spherical mirror grazing incidence x-ray optics
JP3167095B2 (ja) 1995-07-04 2001-05-14 キヤノン株式会社 照明装置とこれを有する露光装置や顕微鏡装置、ならびにデバイス生産方法
JP3284045B2 (ja) 1996-04-30 2002-05-20 キヤノン株式会社 Ｘ線光学装置およびデバイス製造方法
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
DE19935404A1 (de) 1999-07-30 2001-02-01 Zeiss Carl Fa Beleuchtungssystem mit mehreren Lichtquellen
US6438199B1 (en) 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
TWI243287B (en) * 1999-03-12 2005-11-11 Asml Netherlands Bv Lithographic projection apparatus and device manufacturing method using the same
JP2003506881A (ja) 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
DE10001291A1 (de) 2000-01-14 2001-07-19 Zeiss Carl Adaptronischer Spiegel
US6919951B2 (en) 2001-07-27 2005-07-19 Canon Kabushiki Kaisha Illumination system, projection exposure apparatus and device manufacturing method
US6798494B2 (en) 2001-08-30 2004-09-28 Euv Llc Apparatus for generating partially coherent radiation
US7020006B2 (en) * 2002-08-02 2006-03-28 Unity Semiconductor Corporation Discharge of conductive array lines in fast memory
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
EP1496521A1 (en) 2003-07-09 2005-01-12 ASML Netherlands B.V. Mirror and lithographic apparatus with mirror
DE10343333A1 (de) * 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
JP4717813B2 (ja) * 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
DE10358225B3 (de) 2003-12-12 2005-06-30 Forschungszentrum Karlsruhe Gmbh Undulator und Verfahren zu dessen Betrieb
JP4551666B2 (ja) * 2004-02-19 2010-09-29 キヤノン株式会社 照明装置及び露光装置
US7030963B2 (en) * 2004-05-03 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070152171A1 (en) 2005-12-30 2007-07-05 Michael Goldstein Free electron laser
US8766212B2 (en) * 2006-07-19 2014-07-01 Asml Netherlands B.V. Correction of spatial instability of an EUV source by laser beam steering
DE102006034755A1 (de) 2006-07-24 2008-01-31 Carl Zeiss Smt Ag Optische Vorrichtung sowie Verfahren zur Korrektur bzw. Verbesserung des Abbildungsverhaltens einer optischen Vorrichtung
EP1882984B1 (en) * 2006-07-28 2011-10-12 Media Lario s.r.l. Multi-reflection optical systems and their fabrication
DE102008014832A1 (de) 2007-04-19 2008-10-23 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie
DE102008000967B4 (de) 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie
US8390788B2 (en) * 2008-07-11 2013-03-05 Asml Netherlands B.V. Spectral purity filters for use in a lithographic apparatus
DE102009025655A1 (de) 2008-08-27 2010-03-04 Carl Zeiss Smt Ag Optische Komponente zum Einsatz in einem Beleuchtungssystem für eine Projektionsbelichtungsanlage der EUV-Mikrolithographie
DE102009045135A1 (de) 2009-09-30 2011-03-31 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
JP5756121B2 (ja) * 2009-12-14 2015-07-29 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系
EP2533078B1 (en) * 2011-06-09 2014-02-12 ASML Netherlands BV Radiation source and lithographic apparatus
TWI711896B (zh) * 2013-09-25 2020-12-01 荷蘭商Ａｓｍｌ荷蘭公司 光學元件、輻射系統及微影系統
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie

Also Published As

Publication number Publication date
EP3467590C0 (de) 2025-10-15
US20160252823A1 (en) 2016-09-01
CN105765460B (zh) 2018-12-28
EP3467590B1 (de) 2025-10-15
CN110068990B (zh) 2021-12-28
US9958783B2 (en) 2018-05-01
EP3072015A1 (de) 2016-09-28
CN105765460A (zh) 2016-07-13
EP3467590A1 (de) 2019-04-10
DE102013223935A1 (de) 2015-05-28
EP3072015B1 (de) 2019-01-02
CN110068990A (zh) 2019-07-30
US10310381B2 (en) 2019-06-04
KR20160088421A (ko) 2016-07-25
KR20210039000A (ko) 2021-04-08
KR102380615B1 (ko) 2022-03-30
US20180224750A1 (en) 2018-08-09
JP2016537681A (ja) 2016-12-01
KR102413481B1 (ko) 2022-06-27
WO2015078776A1 (de) 2015-06-04

Similar Documents

Publication Publication Date Title
JP6623156B2 (ja) Ｅｕｖ投影リソグラフィのための照明系
US11353795B2 (en) Light source apparatus, optical apparatus, exposure apparatus, device manufacturing method, illuminating method, exposure method, and method for manufacturing optical apparatus
JP6347895B2 (ja) 投影リソグラフィのための照明光学ユニット及びそのための中空導波管構成要素
TW201621473A (zh) 投影微影的光學次系統與投影微影的照明光學單元
JP6678159B2 (ja) 投影露光系のための照明装置
TWI701517B (zh) 光學構件
KR102631210B1 (ko) Euv 투영 리소그래피용 패싯 미러 및 이러한 패싯 미러를 포함하는 조명 광학 유닛
JP2015534132A (ja) 投影露光装置に使用することができる出力ビームを発生させるためのｅｕｖ光源
JP6861149B2 (ja) 投影リソグラフィのための照明光学アセンブリ
CN112470349B (zh) 辐射源和用于将发射的辐射反馈到激光源的装置
TW201624145A (zh) 輻射光源模組

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160727

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171121

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20180308

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180730

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20181022

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20181226

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20190130

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20190122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190418

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190917

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190926

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20191028

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191125

R150 Certificate of patent or registration of utility model

Ref document number: 6623156

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250