CN110068990B - Euv投射光刻的照明系统 - Google Patents

Euv投射光刻的照明系统 Download PDF

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Publication number
CN110068990B
CN110068990B CN201811466330.4A CN201811466330A CN110068990B CN 110068990 B CN110068990 B CN 110068990B CN 201811466330 A CN201811466330 A CN 201811466330A CN 110068990 B CN110068990 B CN 110068990B
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China
Prior art keywords
optical unit
euv
mirror
mirrors
focusing assembly
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CN201811466330.4A
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English (en)
Chinese (zh)
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CN110068990A (zh
Inventor
M.帕特拉
R.米勒
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70183—Zoom systems for adjusting beam diameter
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
CN201811466330.4A 2013-11-22 2014-11-21 Euv投射光刻的照明系统 Active CN110068990B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013223935.1 2013-11-22
DE102013223935.1A DE102013223935A1 (de) 2013-11-22 2013-11-22 Beleuchtungssystem für die EUV-Belichtungslithographie
CN201480063956.4A CN105765460B (zh) 2013-11-22 2014-11-21 Euv投射光刻的照明系统

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480063956.4A Division CN105765460B (zh) 2013-11-22 2014-11-21 Euv投射光刻的照明系统

Publications (2)

Publication Number Publication Date
CN110068990A CN110068990A (zh) 2019-07-30
CN110068990B true CN110068990B (zh) 2021-12-28

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CN201811466330.4A Active CN110068990B (zh) 2013-11-22 2014-11-21 Euv投射光刻的照明系统

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Country Status (7)

Country Link
US (2) US9958783B2 (enExample)
EP (2) EP3467590B1 (enExample)
JP (1) JP6623156B2 (enExample)
KR (2) KR102380615B1 (enExample)
CN (2) CN105765460B (enExample)
DE (1) DE102013223935A1 (enExample)
WO (1) WO2015078776A1 (enExample)

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DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie
DE102014221173A1 (de) 2014-10-17 2016-04-21 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226921A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
DE102014226920A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102014226918A1 (de) 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
TWI701517B (zh) 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 光學構件
DE102015212878A1 (de) 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Strahlführungsvorrichtung
DE102015215216A1 (de) * 2015-08-10 2017-02-16 Carl Zeiss Smt Gmbh Optisches System
US11112618B2 (en) 2015-09-03 2021-09-07 Asml Netherlands B.V. Beam splitting apparatus
DE102015012053A1 (de) * 2015-09-14 2017-03-16 M+W Group GmbH Fertigungsanlage zur Herstellung von integrierten Schaltkreisen aus Halbleiter-Wafern sowie Waffelelement für eine Fertigungsanlage
DE102015220955A1 (de) 2015-10-27 2015-12-17 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102016217426A1 (de) 2016-09-13 2017-08-24 Carl Zeiss Smt Gmbh Strahlteiler
DE102017205548A1 (de) 2017-03-31 2018-10-04 Carl Zeiss Smt Gmbh Optische Baugruppe zum Führen eines Ausgabestrahls eines Freie-Elektronen-Lasers
CN107166180A (zh) * 2017-06-14 2017-09-15 杨毅 灯具
DE102017210190A1 (de) 2017-06-19 2018-03-15 Carl Zeiss Smt Gmbh Optisches Element
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
DE102018212224A1 (de) 2018-07-23 2020-01-23 Carl Zeiss Smt Gmbh Vorrichtung zur Rückkopplung von emittierter Strahlung in eine Laserquelle
EP3627226A1 (en) * 2018-09-20 2020-03-25 ASML Netherlands B.V. Optical system, metrology apparatus and associated method

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CN101490624A (zh) * 2006-07-19 2009-07-22 Asml荷兰有限公司 通过控制激光光束对极紫外光源的空间不稳定性的校正
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Also Published As

Publication number Publication date
CN105765460A (zh) 2016-07-13
KR20210039000A (ko) 2021-04-08
EP3467590C0 (de) 2025-10-15
US9958783B2 (en) 2018-05-01
US20160252823A1 (en) 2016-09-01
CN105765460B (zh) 2018-12-28
KR102413481B1 (ko) 2022-06-27
JP6623156B2 (ja) 2019-12-18
EP3467590B1 (de) 2025-10-15
EP3467590A1 (de) 2019-04-10
US10310381B2 (en) 2019-06-04
US20180224750A1 (en) 2018-08-09
EP3072015B1 (de) 2019-01-02
DE102013223935A1 (de) 2015-05-28
EP3072015A1 (de) 2016-09-28
CN110068990A (zh) 2019-07-30
KR20160088421A (ko) 2016-07-25
WO2015078776A1 (de) 2015-06-04
KR102380615B1 (ko) 2022-03-30
JP2016537681A (ja) 2016-12-01

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