KR102375637B1 - 산화물 소결체 및 스퍼터링 타깃 - Google Patents

산화물 소결체 및 스퍼터링 타깃 Download PDF

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KR102375637B1
KR102375637B1 KR1020197036950A KR20197036950A KR102375637B1 KR 102375637 B1 KR102375637 B1 KR 102375637B1 KR 1020197036950 A KR1020197036950 A KR 1020197036950A KR 20197036950 A KR20197036950 A KR 20197036950A KR 102375637 B1 KR102375637 B1 KR 102375637B1
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South Korea
Prior art keywords
mass
oxide sintered
sputtering target
transparent conductive
conductive film
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KR1020197036950A
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English (en)
Korean (ko)
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KR20200008583A (ko
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겐시 마츠모토
마사키 이노우에
신이치로 나카무라
도모야스 야노
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미쓰이금속광업주식회사
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
KR1020197036950A 2017-08-08 2018-07-02 산화물 소결체 및 스퍼터링 타깃 KR102375637B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2017-153043 2017-08-08
JP2017153043 2017-08-08
PCT/JP2018/025106 WO2019031105A1 (ja) 2017-08-08 2018-07-02 酸化物焼結体およびスパッタリングターゲット

Publications (2)

Publication Number Publication Date
KR20200008583A KR20200008583A (ko) 2020-01-28
KR102375637B1 true KR102375637B1 (ko) 2022-03-17

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Country Status (5)

Country Link
JP (1) JP7086080B2 (zh)
KR (1) KR102375637B1 (zh)
CN (1) CN110741106A (zh)
TW (1) TWI778100B (zh)
WO (1) WO2019031105A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7214063B1 (ja) * 2021-12-28 2023-01-27 三井金属鉱業株式会社 酸化物焼結体及びその製造方法、並びにスパッタリングターゲット材
CN114620996A (zh) * 2022-02-23 2022-06-14 洛阳晶联光电材料有限责任公司 一种高效太阳能电池用旋转陶瓷靶材

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
JPS5726752B2 (zh) 1974-09-17 1982-06-07
JPH04277408A (ja) 1991-03-01 1992-10-02 Kojundo Chem Lab Co Ltd 透明電極
JP3827334B2 (ja) * 1993-08-11 2006-09-27 東ソー株式会社 Ｉｔｏ焼結体及びスパッタリングターゲット
JPH09262926A (ja) * 1996-03-27 1997-10-07 Teijin Ltd タッチパネル用透明導電積層体及びその製造方法
JP3629333B2 (ja) * 1996-03-27 2005-03-16 帝人株式会社 タッチパネル用透明導電積層体及びその製造方法
JP2000238178A (ja) * 1999-02-24 2000-09-05 Teijin Ltd 透明導電積層体
KR100744017B1 (ko) * 2001-06-26 2007-07-30 미츠이 긴조쿠 고교 가부시키가이샤 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법
JP3785109B2 (ja) * 2002-04-08 2006-06-14 日東電工株式会社 透明導電積層体の製造方法
WO2011061922A1 (ja) * 2009-11-19 2011-05-26 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
JP5301021B2 (ja) * 2011-09-06 2013-09-25 出光興産株式会社 スパッタリングターゲット
JP5498537B2 (ja) * 2012-07-06 2014-05-21 日東電工株式会社 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル
JP6261987B2 (ja) * 2013-01-16 2018-01-17 日東電工株式会社 透明導電フィルムおよびその製造方法
CN103510047A (zh) * 2013-10-21 2014-01-15 研创应用材料（赣州）有限公司 一种制备新型导电氧化铟锡材料及其薄膜的方法
WO2015166723A1 (ja) * 2014-04-30 2015-11-05 日東電工株式会社 透明導電性フィルム
JP6066154B2 (ja) * 2014-05-20 2017-01-25 日東電工株式会社 透明導電性フィルムの製造方法
JP5876172B1 (ja) * 2014-10-06 2016-03-02 Ｊｘ金属株式会社 酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法
JP5735190B1 (ja) * 2015-01-22 2015-06-17 Jx日鉱日石金属株式会社 酸化物焼結体、スパッタリングターゲット及び酸化物薄膜

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Publication number Publication date
WO2019031105A1 (ja) 2019-02-14
JPWO2019031105A1 (ja) 2020-07-09
KR20200008583A (ko) 2020-01-28
JP7086080B2 (ja) 2022-06-17
CN110741106A (zh) 2020-01-31
TWI778100B (zh) 2022-09-21
TW201910539A (zh) 2019-03-16

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