KR102352659B1 - 저 손상 자기 정렬형 양쪽성 finfet 팁 도핑 - Google Patents
저 손상 자기 정렬형 양쪽성 finfet 팁 도핑 Download PDFInfo
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- KR102352659B1 KR102352659B1 KR1020187002563A KR20187002563A KR102352659B1 KR 102352659 B1 KR102352659 B1 KR 102352659B1 KR 1020187002563 A KR1020187002563 A KR 1020187002563A KR 20187002563 A KR20187002563 A KR 20187002563A KR 102352659 B1 KR102352659 B1 KR 102352659B1
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2015/038197 WO2017003414A1 (en) | 2015-06-27 | 2015-06-27 | Low damage self-aligned amphoteric finfet tip doping |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180021157A KR20180021157A (ko) | 2018-02-28 |
KR102352659B1 true KR102352659B1 (ko) | 2022-01-18 |
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KR1020187002563A KR102352659B1 (ko) | 2015-06-27 | 2015-06-27 | 저 손상 자기 정렬형 양쪽성 finfet 팁 도핑 |
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EP (1) | EP3314667A4 (zh) |
KR (1) | KR102352659B1 (zh) |
CN (1) | CN107636838B (zh) |
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WO (1) | WO2017003414A1 (zh) |
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US11233148B2 (en) | 2017-11-06 | 2022-01-25 | Intel Corporation | Reducing band-to-band tunneling in semiconductor devices |
WO2019125361A1 (en) * | 2017-12-18 | 2019-06-27 | Intel Corporation | Switching device with pocket having high mobility carriers |
CN110970300B (zh) * | 2018-09-29 | 2023-09-22 | 中芯国际集成电路制造(上海)有限公司 | 堆叠环栅鳍式场效应管及其形成方法 |
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US20130052801A1 (en) * | 2011-08-30 | 2013-02-28 | International Business Machines Corporation | Method to enable compressively strained pfet channel in a finfet structure by implant and thermal diffusion |
US20130175659A1 (en) * | 2012-01-05 | 2013-07-11 | Taiwan Semiconductor Manufacturing Company. Ltd. | FinFETs with Vertical Fins and Methods for Forming the Same |
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FR2296264A1 (fr) * | 1974-12-24 | 1976-07-23 | Radiotechnique Compelec | Procede de realisation de dispositif semi-conducteur a heterojonction |
EP0565054A3 (en) * | 1992-04-09 | 1994-07-27 | Hughes Aircraft Co | N-type antimony-based strained layer superlattice and fabrication method |
US8120063B2 (en) * | 2008-12-29 | 2012-02-21 | Intel Corporation | Modulation-doped multi-gate devices |
US8264032B2 (en) * | 2009-09-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
US20120161105A1 (en) * | 2010-12-22 | 2012-06-28 | Willy Rachmady | Uniaxially strained quantum well device and method of making same |
US8896066B2 (en) * | 2011-12-20 | 2014-11-25 | Intel Corporation | Tin doped III-V material contacts |
WO2013095375A1 (en) * | 2011-12-20 | 2013-06-27 | Intel Corporation | Iii-v layers for n-type and p-type mos source-drain contacts |
US9224809B2 (en) * | 2012-05-17 | 2015-12-29 | The Board Of Trustees Of The University Of Illinois | Field effect transistor structure comprising a stack of vertically separated channel nanowires |
US20140264607A1 (en) * | 2013-03-13 | 2014-09-18 | International Business Machines Corporation | Iii-v finfets on silicon substrate |
US8889541B1 (en) * | 2013-05-07 | 2014-11-18 | International Business Machines Corporation | Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer |
US8912609B2 (en) * | 2013-05-08 | 2014-12-16 | International Business Machines Corporation | Low extension resistance III-V compound fin field effect transistor |
DE112013007031B4 (de) * | 2013-06-28 | 2022-02-24 | Intel Corporation | Auf selektiv epitaktisch gezüchteten III-V-Materialien basierende Vorrichtungen |
US9178045B2 (en) * | 2013-09-27 | 2015-11-03 | Samsung Electronics Co., Ltd. | Integrated circuit devices including FinFETS and methods of forming the same |
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- 2015-06-27 CN CN201580080418.0A patent/CN107636838B/zh active Active
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US20130052801A1 (en) * | 2011-08-30 | 2013-02-28 | International Business Machines Corporation | Method to enable compressively strained pfet channel in a finfet structure by implant and thermal diffusion |
US20130175659A1 (en) * | 2012-01-05 | 2013-07-11 | Taiwan Semiconductor Manufacturing Company. Ltd. | FinFETs with Vertical Fins and Methods for Forming the Same |
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WO2017003414A1 (en) | 2017-01-05 |
TW201711204A (zh) | 2017-03-16 |
CN107636838A (zh) | 2018-01-26 |
EP3314667A4 (en) | 2019-02-27 |
EP3314667A1 (en) | 2018-05-02 |
KR20180021157A (ko) | 2018-02-28 |
TWI706567B (zh) | 2020-10-01 |
CN107636838B (zh) | 2022-01-14 |
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