KR102352659B1 - 저 손상 자기 정렬형 양쪽성 finfet 팁 도핑 - Google Patents

저 손상 자기 정렬형 양쪽성 finfet 팁 도핑 Download PDF

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KR102352659B1
KR102352659B1 KR1020187002563A KR20187002563A KR102352659B1 KR 102352659 B1 KR102352659 B1 KR 102352659B1 KR 1020187002563 A KR1020187002563 A KR 1020187002563A KR 20187002563 A KR20187002563 A KR 20187002563A KR 102352659 B1 KR102352659 B1 KR 102352659B1
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South Korea
Prior art keywords
fin
compound semiconductor
iii
dopant
semiconductor material
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KR1020187002563A
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English (en)
Korean (ko)
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KR20180021157A (ko
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잭 티. 카발리에로스
찬드라 에스. 모하파트라
아난드 에스. 머씨
윌리 라차마디
매튜 브이. 메츠
길버트 듀이
타히르 가니
해롤드 더블유. 케넬
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인텔 코포레이션
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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020187002563A 2015-06-27 2015-06-27 저 손상 자기 정렬형 양쪽성 finfet 팁 도핑 KR102352659B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2015/038197 WO2017003414A1 (en) 2015-06-27 2015-06-27 Low damage self-aligned amphoteric finfet tip doping

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KR20180021157A KR20180021157A (ko) 2018-02-28
KR102352659B1 true KR102352659B1 (ko) 2022-01-18

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EP (1) EP3314667A4 (zh)
KR (1) KR102352659B1 (zh)
CN (1) CN107636838B (zh)
TW (1) TWI706567B (zh)
WO (1) WO2017003414A1 (zh)

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WO2019089050A1 (en) * 2017-11-06 2019-05-09 Intel Corporation Reducing band-to-band tunneling in semiconductor devices
WO2019125361A1 (en) * 2017-12-18 2019-06-27 Intel Corporation Switching device with pocket having high mobility carriers
CN110970300B (zh) * 2018-09-29 2023-09-22 中芯国际集成电路制造(上海)有限公司 堆叠环栅鳍式场效应管及其形成方法

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US20130052801A1 (en) * 2011-08-30 2013-02-28 International Business Machines Corporation Method to enable compressively strained pfet channel in a finfet structure by implant and thermal diffusion
US20130175659A1 (en) * 2012-01-05 2013-07-11 Taiwan Semiconductor Manufacturing Company. Ltd. FinFETs with Vertical Fins and Methods for Forming the Same

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US20120161105A1 (en) * 2010-12-22 2012-06-28 Willy Rachmady Uniaxially strained quantum well device and method of making same
KR101891458B1 (ko) * 2011-12-20 2018-08-24 인텔 코포레이션 Iii-v 반도체 재료 층을 갖는 반도체 디바이스
US8896066B2 (en) * 2011-12-20 2014-11-25 Intel Corporation Tin doped III-V material contacts
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RU2643931C2 (ru) * 2013-06-28 2018-02-06 Интел Корпорейшн Устройства, основанные на избирательно эпитаксиально выращенных материалах iii-v групп
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US20130052801A1 (en) * 2011-08-30 2013-02-28 International Business Machines Corporation Method to enable compressively strained pfet channel in a finfet structure by implant and thermal diffusion
US20130175659A1 (en) * 2012-01-05 2013-07-11 Taiwan Semiconductor Manufacturing Company. Ltd. FinFETs with Vertical Fins and Methods for Forming the Same

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TWI706567B (zh) 2020-10-01
CN107636838B (zh) 2022-01-14
EP3314667A4 (en) 2019-02-27
KR20180021157A (ko) 2018-02-28
TW201711204A (zh) 2017-03-16
EP3314667A1 (en) 2018-05-02
WO2017003414A1 (en) 2017-01-05
CN107636838A (zh) 2018-01-26

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