KR102350501B1 - 기판을 급속 냉각하기 위한 방법들 및 장치 - Google Patents

기판을 급속 냉각하기 위한 방법들 및 장치 Download PDF

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Publication number
KR102350501B1
KR102350501B1 KR1020167031537A KR20167031537A KR102350501B1 KR 102350501 B1 KR102350501 B1 KR 102350501B1 KR 1020167031537 A KR1020167031537 A KR 1020167031537A KR 20167031537 A KR20167031537 A KR 20167031537A KR 102350501 B1 KR102350501 B1 KR 102350501B1
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South Korea
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substrate
cooling
volume
support
plate
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Korean (ko)
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KR20160138303A (ko
Inventor
잘레팔리 라비
스티븐 브이. 샌소니
키란쿠마르 사반다이아
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020167031537A 2014-04-11 2015-03-17 기판을 급속 냉각하기 위한 방법들 및 장치 Active KR102350501B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/251,134 2014-04-11
US14/251,134 US9779971B2 (en) 2014-04-11 2014-04-11 Methods and apparatus for rapidly cooling a substrate
PCT/US2015/020905 WO2015156968A1 (en) 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate

Publications (2)

Publication Number Publication Date
KR20160138303A KR20160138303A (ko) 2016-12-02
KR102350501B1 true KR102350501B1 (ko) 2022-01-11

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KR1020167031537A Active KR102350501B1 (ko) 2014-04-11 2015-03-17 기판을 급속 냉각하기 위한 방법들 및 장치

Country Status (7)

Country Link
US (2) US9779971B2 (enExample)
JP (1) JP6574442B2 (enExample)
KR (1) KR102350501B1 (enExample)
CN (1) CN106133874B (enExample)
SG (1) SG11201607363TA (enExample)
TW (1) TWI670386B (enExample)
WO (1) WO2015156968A1 (enExample)

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WO2016091927A1 (en) * 2014-12-11 2016-06-16 Evatec Ag Apparatus and method especially for degassing of substrates
JP6554387B2 (ja) * 2015-10-26 2019-07-31 東京エレクトロン株式会社 ロードロック装置における基板冷却方法、基板搬送方法、およびロードロック装置
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US11201078B2 (en) * 2017-02-14 2021-12-14 Applied Materials, Inc. Substrate position calibration for substrate supports in substrate processing systems
JP6863780B2 (ja) 2017-03-10 2021-04-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
US12469739B2 (en) 2017-10-27 2025-11-11 Applied Materials, Inc. Methods of operating a spatial deposition tool
TWI729319B (zh) * 2017-10-27 2021-06-01 美商應用材料股份有限公司 具有空間分離的單個晶圓處理環境
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
USD931240S1 (en) 2019-07-30 2021-09-21 Applied Materials, Inc. Substrate support pedestal
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
US20230253189A1 (en) * 2020-07-13 2023-08-10 Lam Research Corporation Seal venting in a substrate processing chamber
JP7285276B2 (ja) * 2021-03-25 2023-06-01 株式会社Kokusai Electric 冷却方法及び半導体装置の製造方法及び処理装置
KR102833841B1 (ko) * 2021-11-19 2025-07-14 어플라이드 머티어리얼스, 인코포레이티드 기판 쿨 다운 시간을 감소시키기 위한 장치 및 방법들
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

Citations (1)

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JP2008192643A (ja) * 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置

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JP3272458B2 (ja) * 1993-03-04 2002-04-08 株式会社日立国際電気 基板冷却装置及び基板冷却方法
JPH07254545A (ja) * 1994-03-15 1995-10-03 Oki Electric Ind Co Ltd 半導体基板の熱処理方法及びそのための装置
JP2971818B2 (ja) * 1996-09-24 1999-11-08 イートン コーポレーション ウエハー熱処理装置
US6108937A (en) * 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
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JP2003124134A (ja) * 2001-10-10 2003-04-25 Semiconductor Leading Edge Technologies Inc 加熱処理装置および加熱処理方法
JP3921234B2 (ja) * 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
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Also Published As

Publication number Publication date
US10312116B2 (en) 2019-06-04
SG11201607363TA (en) 2016-10-28
TWI670386B (zh) 2019-09-01
KR20160138303A (ko) 2016-12-02
US20150294886A1 (en) 2015-10-15
US9779971B2 (en) 2017-10-03
JP6574442B2 (ja) 2019-09-11
WO2015156968A1 (en) 2015-10-15
TW201540860A (zh) 2015-11-01
US20180025924A1 (en) 2018-01-25
JP2017517877A (ja) 2017-06-29
CN106133874A (zh) 2016-11-16
CN106133874B (zh) 2019-09-06

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