JP6574442B2 - 基板を急速に冷却する方法および装置 - Google Patents

基板を急速に冷却する方法および装置 Download PDF

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Publication number
JP6574442B2
JP6574442B2 JP2016561693A JP2016561693A JP6574442B2 JP 6574442 B2 JP6574442 B2 JP 6574442B2 JP 2016561693 A JP2016561693 A JP 2016561693A JP 2016561693 A JP2016561693 A JP 2016561693A JP 6574442 B2 JP6574442 B2 JP 6574442B2
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substrate
volume
support
plate
substrate support
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Japanese (ja)
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JP2017517877A5 (enExample
JP2017517877A (ja
Inventor
ジャレパリー ラヴィ
ジャレパリー ラヴィ
スティーヴン ヴイ サンソニ
スティーヴン ヴイ サンソニ
キランクマル サヴァンダイア
キランクマル サヴァンダイア
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2017517877A5 publication Critical patent/JP2017517877A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016561693A 2014-04-11 2015-03-17 基板を急速に冷却する方法および装置 Active JP6574442B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/251,134 US9779971B2 (en) 2014-04-11 2014-04-11 Methods and apparatus for rapidly cooling a substrate
US14/251,134 2014-04-11
PCT/US2015/020905 WO2015156968A1 (en) 2014-04-11 2015-03-17 Methods and apparatus for rapidly cooling a substrate

Publications (3)

Publication Number Publication Date
JP2017517877A JP2017517877A (ja) 2017-06-29
JP2017517877A5 JP2017517877A5 (enExample) 2018-04-26
JP6574442B2 true JP6574442B2 (ja) 2019-09-11

Family

ID=54265673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016561693A Active JP6574442B2 (ja) 2014-04-11 2015-03-17 基板を急速に冷却する方法および装置

Country Status (7)

Country Link
US (2) US9779971B2 (enExample)
JP (1) JP6574442B2 (enExample)
KR (1) KR102350501B1 (enExample)
CN (1) CN106133874B (enExample)
SG (1) SG11201607363TA (enExample)
TW (1) TWI670386B (enExample)
WO (1) WO2015156968A1 (enExample)

Families Citing this family (14)

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EP3210240A1 (en) * 2014-12-11 2017-08-30 Evatec AG Apparatus and method especially for degassing of substrates
JP6554387B2 (ja) * 2015-10-26 2019-07-31 東京エレクトロン株式会社 ロードロック装置における基板冷却方法、基板搬送方法、およびロードロック装置
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US11201078B2 (en) * 2017-02-14 2021-12-14 Applied Materials, Inc. Substrate position calibration for substrate supports in substrate processing systems
JP6863780B2 (ja) 2017-03-10 2021-04-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
US12469739B2 (en) 2017-10-27 2025-11-11 Applied Materials, Inc. Methods of operating a spatial deposition tool
TWI768849B (zh) 2017-10-27 2022-06-21 美商應用材料股份有限公司 具有空間分離的單個晶圓處理環境
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
USD931240S1 (en) 2019-07-30 2021-09-21 Applied Materials, Inc. Substrate support pedestal
WO2022015512A1 (en) * 2020-07-13 2022-01-20 Lam Research Corporation Seal venting in a substrate processing chamber
JP7285276B2 (ja) * 2021-03-25 2023-06-01 株式会社Kokusai Electric 冷却方法及び半導体装置の製造方法及び処理装置
CN117836919A (zh) * 2021-11-19 2024-04-05 应用材料公司 用于减少基板冷却时间的设备及方法
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

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US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
JP3272458B2 (ja) * 1993-03-04 2002-04-08 株式会社日立国際電気 基板冷却装置及び基板冷却方法
JPH07254545A (ja) * 1994-03-15 1995-10-03 Oki Electric Ind Co Ltd 半導体基板の熱処理方法及びそのための装置
JP2971818B2 (ja) * 1996-09-24 1999-11-08 イートン コーポレーション ウエハー熱処理装置
US6108937A (en) * 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
JP3476687B2 (ja) * 1998-09-21 2003-12-10 東京エレクトロン株式会社 プラズマ処理装置
US6183564B1 (en) 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
JP2003124134A (ja) * 2001-10-10 2003-04-25 Semiconductor Leading Edge Technologies Inc 加熱処理装置および加熱処理方法
JP3921234B2 (ja) * 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6778762B1 (en) * 2002-04-17 2004-08-17 Novellus Systems, Inc. Sloped chamber top for substrate processing
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US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7743730B2 (en) * 2005-12-21 2010-06-29 Lam Research Corporation Apparatus for an optimized plasma chamber grounded electrode assembly
JP5183058B2 (ja) * 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド 急速温度勾配コントロールによる基板処理
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US7803419B2 (en) * 2006-09-22 2010-09-28 Abound Solar, Inc. Apparatus and method for rapid cooling of large area substrates in vacuum
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JP2008192643A (ja) * 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
JP2009290087A (ja) * 2008-05-30 2009-12-10 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
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WO2011037020A1 (ja) * 2009-09-28 2011-03-31 東京エレクトロン株式会社 被処理体の冷却方法、冷却装置及びコンピュータ読み取り可能な記憶媒体
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KR20120120102A (ko) * 2010-10-18 2012-11-01 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치 및 진공처리방법
JP2012089591A (ja) 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
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Also Published As

Publication number Publication date
SG11201607363TA (en) 2016-10-28
US10312116B2 (en) 2019-06-04
CN106133874B (zh) 2019-09-06
TWI670386B (zh) 2019-09-01
US20150294886A1 (en) 2015-10-15
CN106133874A (zh) 2016-11-16
US20180025924A1 (en) 2018-01-25
US9779971B2 (en) 2017-10-03
WO2015156968A1 (en) 2015-10-15
KR20160138303A (ko) 2016-12-02
KR102350501B1 (ko) 2022-01-11
TW201540860A (zh) 2015-11-01
JP2017517877A (ja) 2017-06-29

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