KR102329586B1 - 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막 - Google Patents

포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막 Download PDF

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Publication number
KR102329586B1
KR102329586B1 KR1020140163483A KR20140163483A KR102329586B1 KR 102329586 B1 KR102329586 B1 KR 102329586B1 KR 1020140163483 A KR1020140163483 A KR 1020140163483A KR 20140163483 A KR20140163483 A KR 20140163483A KR 102329586 B1 KR102329586 B1 KR 102329586B1
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KR
South Korea
Prior art keywords
siloxane polymer
group
compound
photosensitive resin
resin composition
Prior art date
Application number
KR1020140163483A
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English (en)
Korean (ko)
Other versions
KR20160061055A (ko
Inventor
허근
나종호
권진
이은영
Original Assignee
롬엔드하스전자재료코리아유한회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 롬엔드하스전자재료코리아유한회사 filed Critical 롬엔드하스전자재료코리아유한회사
Priority to KR1020140163483A priority Critical patent/KR102329586B1/ko
Priority to JP2015216601A priority patent/JP6941416B2/ja
Priority to TW104137382A priority patent/TWI702472B/zh
Priority to CN201510812533.4A priority patent/CN105629663B/zh
Publication of KR20160061055A publication Critical patent/KR20160061055A/ko
Application granted granted Critical
Publication of KR102329586B1 publication Critical patent/KR102329586B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020140163483A 2014-11-21 2014-11-21 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막 KR102329586B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020140163483A KR102329586B1 (ko) 2014-11-21 2014-11-21 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막
JP2015216601A JP6941416B2 (ja) 2014-11-21 2015-11-04 ポジ型感光性樹脂組成物及びそれより調製される硬化膜
TW104137382A TWI702472B (zh) 2014-11-21 2015-11-12 正型感光性樹脂組成物及自其製備之固化膜
CN201510812533.4A CN105629663B (zh) 2014-11-21 2015-11-20 感光性树脂组合物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140163483A KR102329586B1 (ko) 2014-11-21 2014-11-21 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막

Publications (2)

Publication Number Publication Date
KR20160061055A KR20160061055A (ko) 2016-05-31
KR102329586B1 true KR102329586B1 (ko) 2021-11-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140163483A KR102329586B1 (ko) 2014-11-21 2014-11-21 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막

Country Status (4)

Country Link
JP (1) JP6941416B2 (ja)
KR (1) KR102329586B1 (ja)
CN (1) CN105629663B (ja)
TW (1) TWI702472B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170053561A (ko) * 2015-11-06 2017-05-16 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
KR102539889B1 (ko) * 2016-08-11 2023-06-05 동우 화인켐 주식회사 화학증폭형 감광성 수지 조성물 및 이로부터 제조된 절연막
KR102472024B1 (ko) * 2016-10-05 2022-11-30 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
CN107918249A (zh) * 2016-10-05 2018-04-17 罗门哈斯电子材料韩国有限公司 感光性树脂组合物和由其制备的固化膜
KR20180135375A (ko) * 2017-06-12 2018-12-20 롬엔드하스전자재료코리아유한회사 착색 감광성 수지 조성물 및 이로부터 제조된 차광성 스페이서
KR20190056088A (ko) 2017-11-16 2019-05-24 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
CN109904212B (zh) * 2019-03-28 2021-07-20 昆山国显光电有限公司 一种有机发光显示面板及其制作方法
CN111607082A (zh) * 2020-06-05 2020-09-01 北京大学 一种低热膨胀系数聚酰亚胺薄膜的制备方法

Citations (3)

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JP2009251538A (ja) 2008-04-11 2009-10-29 Nippon Zeon Co Ltd 感放射線樹脂組成物
JP2011253035A (ja) * 2010-06-02 2011-12-15 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
WO2012133617A1 (ja) * 2011-03-30 2012-10-04 日本ゼオン株式会社 樹脂組成物および半導体素子基板

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JP5099140B2 (ja) * 2007-08-24 2012-12-12 東レ株式会社 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
JP5533232B2 (ja) * 2009-06-29 2014-06-25 Ｊｓｒ株式会社 ポジ型感放射線性組成物、硬化膜、層間絶縁膜、層間絶縁膜の形成方法、表示素子、及び層間絶縁膜形成用のシロキサンポリマー
US20120237873A1 (en) * 2009-12-20 2012-09-20 Toray Industries Inc. Positive photosensitive resin composition, cured film formed from the same, and device having cured film
JP5623896B2 (ja) * 2010-01-15 2014-11-12 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP5817717B2 (ja) * 2010-04-28 2015-11-18 Jsr株式会社 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
KR101799361B1 (ko) * 2010-12-24 2017-11-20 가부시키가이샤 아데카 감광성 수지 조성물
KR101779877B1 (ko) * 2011-05-20 2017-09-19 닛산 가가쿠 고교 가부시키 가이샤 감광성 수지 조성물
SG11201402918VA (en) * 2011-12-26 2014-10-30 Toray Industries Photosensitive resin composition and process for producing semiconductor element
TWI446111B (zh) * 2012-04-20 2014-07-21 Chi Mei Corp 感光性樹脂組成物、黑色矩陣、彩色濾光片及其液晶顯示元件
TWI470359B (zh) * 2012-09-27 2015-01-21 Chi Mei Corp 感光性樹脂組成物、保護膜及具有保護膜的元件
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JP2009251538A (ja) 2008-04-11 2009-10-29 Nippon Zeon Co Ltd 感放射線樹脂組成物
JP2011253035A (ja) * 2010-06-02 2011-12-15 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
WO2012133617A1 (ja) * 2011-03-30 2012-10-04 日本ゼオン株式会社 樹脂組成物および半導体素子基板

Also Published As

Publication number Publication date
CN105629663B (zh) 2021-01-15
TW201624135A (zh) 2016-07-01
KR20160061055A (ko) 2016-05-31
TWI702472B (zh) 2020-08-21
CN105629663A (zh) 2016-06-01
JP6941416B2 (ja) 2021-09-29
JP2016128901A (ja) 2016-07-14

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