KR102322420B1 - 저결점의 화학적 기계적 폴리싱 조성물 - Google Patents

저결점의 화학적 기계적 폴리싱 조성물 Download PDF

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Publication number
KR102322420B1
KR102322420B1 KR1020140123473A KR20140123473A KR102322420B1 KR 102322420 B1 KR102322420 B1 KR 102322420B1 KR 1020140123473 A KR1020140123473 A KR 1020140123473A KR 20140123473 A KR20140123473 A KR 20140123473A KR 102322420 B1 KR102322420 B1 KR 102322420B1
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KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
formula
substrate
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Expired - Fee Related
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KR1020140123473A
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English (en)
Korean (ko)
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KR20150032495A (ko
Inventor
구오 이
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Publication of KR20150032495A publication Critical patent/KR20150032495A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020140123473A 2013-09-18 2014-09-17 저결점의 화학적 기계적 폴리싱 조성물 Expired - Fee Related KR102322420B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/030,126 US9012327B2 (en) 2013-09-18 2013-09-18 Low defect chemical mechanical polishing composition
US14/030,126 2013-09-18

Publications (2)

Publication Number Publication Date
KR20150032495A KR20150032495A (ko) 2015-03-26
KR102322420B1 true KR102322420B1 (ko) 2021-11-04

Family

ID=52580048

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140123473A Expired - Fee Related KR102322420B1 (ko) 2013-09-18 2014-09-17 저결점의 화학적 기계적 폴리싱 조성물

Country Status (7)

Country Link
US (1) US9012327B2 (enExample)
JP (1) JP6423214B2 (enExample)
KR (1) KR102322420B1 (enExample)
CN (1) CN104449396B (enExample)
DE (1) DE102014013924A1 (enExample)
FR (1) FR3010650B1 (enExample)
TW (1) TWI636129B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
CN108076668B (zh) 2015-09-30 2019-05-14 福吉米株式会社 研磨用组合物
JPWO2018012175A1 (ja) 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法および研磨方法
JPWO2018012173A1 (ja) 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN116000782B (zh) * 2022-12-27 2023-09-19 昂士特科技(深圳)有限公司 用于金属合金cmp的化学机械抛光组合物

Citations (2)

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JP2006519490A (ja) * 2003-02-27 2006-08-24 キャボット マイクロエレクトロニクス コーポレイション 貴金属のｃｍｐ方法
US20090202816A1 (en) * 2006-06-06 2009-08-13 Florida State University Research Foundation, Inc. Stabilized silica colloid

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US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
WO1998048453A1 (en) 1997-04-23 1998-10-29 Advanced Chemical Systems International, Inc. Planarization compositions for cmp of interlayer dielectrics
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US6685757B2 (en) 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
TWI347969B (en) 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
WO2006078074A2 (en) * 2005-01-24 2006-07-27 Showa Denko K.K. Polishing composition and polishing method
US20060205218A1 (en) 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
JP2007088258A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属研磨液及びそれを用いる研磨方法
CN101283441B (zh) * 2005-10-12 2011-07-20 日立化成工业株式会社 Cmp用研磨液及研磨方法
JP2009081200A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 研磨液
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5314329B2 (ja) 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP5673506B2 (ja) * 2011-11-18 2015-02-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006519490A (ja) * 2003-02-27 2006-08-24 キャボット マイクロエレクトロニクス コーポレイション 貴金属のｃｍｐ方法
US20090202816A1 (en) * 2006-06-06 2009-08-13 Florida State University Research Foundation, Inc. Stabilized silica colloid

Also Published As

Publication number Publication date
US9012327B2 (en) 2015-04-21
JP2015063687A (ja) 2015-04-09
DE102014013924A1 (de) 2015-03-19
US20150079788A1 (en) 2015-03-19
TW201525117A (zh) 2015-07-01
JP6423214B2 (ja) 2018-11-14
FR3010650A1 (fr) 2015-03-20
TWI636129B (zh) 2018-09-21
KR20150032495A (ko) 2015-03-26
CN104449396A (zh) 2015-03-25
CN104449396B (zh) 2016-08-17
FR3010650B1 (fr) 2017-09-22

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