TWI636129B - 低缺陷化學機械硏磨組成物 - Google Patents

低缺陷化學機械硏磨組成物 Download PDF

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Publication number
TWI636129B
TWI636129B TW103131857A TW103131857A TWI636129B TW I636129 B TWI636129 B TW I636129B TW 103131857 A TW103131857 A TW 103131857A TW 103131857 A TW103131857 A TW 103131857A TW I636129 B TWI636129 B TW I636129B
Authority
TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
formula
polishing composition
composition
Prior art date
Application number
TW103131857A
Other languages
English (en)
Chinese (zh)
Other versions
TW201525117A (zh
Inventor
郭毅
Original Assignee
羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW201525117A publication Critical patent/TW201525117A/zh
Application granted granted Critical
Publication of TWI636129B publication Critical patent/TWI636129B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW103131857A 2013-09-18 2014-09-16 低缺陷化學機械硏磨組成物 TWI636129B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/030,126 2013-09-18
US14/030,126 US9012327B2 (en) 2013-09-18 2013-09-18 Low defect chemical mechanical polishing composition

Publications (2)

Publication Number Publication Date
TW201525117A TW201525117A (zh) 2015-07-01
TWI636129B true TWI636129B (zh) 2018-09-21

Family

ID=52580048

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131857A TWI636129B (zh) 2013-09-18 2014-09-16 低缺陷化學機械硏磨組成物

Country Status (7)

Country Link
US (1) US9012327B2 (enExample)
JP (1) JP6423214B2 (enExample)
KR (1) KR102322420B1 (enExample)
CN (1) CN104449396B (enExample)
DE (1) DE102014013924A1 (enExample)
FR (1) FR3010650B1 (enExample)
TW (1) TWI636129B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
CN108076668B (zh) 2015-09-30 2019-05-14 福吉米株式会社 研磨用组合物
WO2018012175A1 (ja) 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法および研磨方法
US11111412B2 (en) 2016-07-15 2021-09-07 Fujimi Incorporated Polishing composition, method for producing polishing composition, and polishing method
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN116000782B (zh) * 2022-12-27 2023-09-19 昂士特科技(深圳)有限公司 用于金属合金cmp的化学机械抛光组合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1753961A (zh) * 2003-02-27 2006-03-29 卡伯特微电子公司 包括磺酸的cmp组合物和用于抛光贵金属的方法

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US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
AU7147798A (en) 1997-04-23 1998-11-13 Advanced Chemical Systems International, Inc. Planarization compositions for cmp of interlayer dielectrics
DE10063491A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US6685757B2 (en) 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
TWI347969B (en) 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
WO2006078074A2 (en) * 2005-01-24 2006-07-27 Showa Denko K.K. Polishing composition and polishing method
US20060205218A1 (en) 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
JP2007088258A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 金属研磨液及びそれを用いる研磨方法
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法
WO2007146680A1 (en) 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
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JP5314329B2 (ja) 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP5673506B2 (ja) * 2011-11-18 2015-02-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1753961A (zh) * 2003-02-27 2006-03-29 卡伯特微电子公司 包括磺酸的cmp组合物和用于抛光贵金属的方法

Also Published As

Publication number Publication date
CN104449396B (zh) 2016-08-17
KR102322420B1 (ko) 2021-11-04
US20150079788A1 (en) 2015-03-19
JP6423214B2 (ja) 2018-11-14
TW201525117A (zh) 2015-07-01
CN104449396A (zh) 2015-03-25
JP2015063687A (ja) 2015-04-09
DE102014013924A1 (de) 2015-03-19
KR20150032495A (ko) 2015-03-26
FR3010650A1 (fr) 2015-03-20
US9012327B2 (en) 2015-04-21
FR3010650B1 (fr) 2017-09-22

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