KR102310794B1 - 감광성 수지 조성물 및 이로부터 제조된 경화막 - Google Patents

감광성 수지 조성물 및 이로부터 제조된 경화막 Download PDF

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Publication number
KR102310794B1
KR102310794B1 KR1020170039208A KR20170039208A KR102310794B1 KR 102310794 B1 KR102310794 B1 KR 102310794B1 KR 1020170039208 A KR1020170039208 A KR 1020170039208A KR 20170039208 A KR20170039208 A KR 20170039208A KR 102310794 B1 KR102310794 B1 KR 102310794B1
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South Korea
Prior art keywords
weight
siloxane polymer
resin composition
photosensitive resin
siloxane
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KR1020170039208A
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English (en)
Korean (ko)
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KR20170131208A (ko
Inventor
양종한
허근
권진
나종호
Original Assignee
롬엔드하스전자재료코리아유한회사
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Priority to PCT/KR2017/003421 priority Critical patent/WO2017200201A1/en
Priority to US16/097,883 priority patent/US20190137877A1/en
Priority to JP2018556382A priority patent/JP6983812B2/ja
Priority to CN201780025959.2A priority patent/CN109073971B/zh
Priority to TW106115050A priority patent/TWI758290B/zh
Publication of KR20170131208A publication Critical patent/KR20170131208A/ko
Application granted granted Critical
Publication of KR102310794B1 publication Critical patent/KR102310794B1/ko
Priority to US18/065,798 priority patent/US20230109843A1/en
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • H01L27/3258—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020170039208A 2016-05-19 2017-03-28 감광성 수지 조성물 및 이로부터 제조된 경화막 Active KR102310794B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/KR2017/003421 WO2017200201A1 (en) 2016-05-19 2017-03-29 Photosensitive resin composition and cured film prepared therefrom
US16/097,883 US20190137877A1 (en) 2016-05-19 2017-03-29 Photosensitive resin composition and cured film prepared therefrom
JP2018556382A JP6983812B2 (ja) 2016-05-19 2017-03-29 感光性樹脂組成物及びそれから調製される硬化膜
CN201780025959.2A CN109073971B (zh) 2016-05-19 2017-03-29 光敏树脂组合物和由其制备的固化膜
TW106115050A TWI758290B (zh) 2016-05-19 2017-05-05 感光性樹脂組合物及由其製備之固化膜
US18/065,798 US20230109843A1 (en) 2016-05-19 2022-12-14 Photosensitive resin composition and cured film prepared therefrom

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20160061371 2016-05-19
KR1020160061371 2016-05-19

Publications (2)

Publication Number Publication Date
KR20170131208A KR20170131208A (ko) 2017-11-29
KR102310794B1 true KR102310794B1 (ko) 2021-10-12

Family

ID=60812284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170039208A Active KR102310794B1 (ko) 2016-05-19 2017-03-28 감광성 수지 조성물 및 이로부터 제조된 경화막

Country Status (5)

Country Link
US (2) US20190137877A1 (enExample)
JP (1) JP6983812B2 (enExample)
KR (1) KR102310794B1 (enExample)
CN (1) CN109073971B (enExample)
TW (1) TWI758290B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102674721B1 (ko) * 2018-11-29 2024-06-14 듀폰스페셜티머터리얼스코리아 유한회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130216952A1 (en) 2010-08-24 2013-08-22 Az Electronic Materials Usa Corp. Positive photosensitive siloxane composition
US20140335452A1 (en) 2011-05-20 2014-11-13 Az Electronic Materials Usa Corp. Positive photosensitive siloxane composition
JP2015146332A (ja) 2014-01-31 2015-08-13 国立大学法人 奈良先端科学技術大学院大学 保護膜を具備する薄膜トランジスタ基板およびその製造方法

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EP1662322B1 (en) 2004-11-26 2017-01-11 Toray Industries, Inc. Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film
JP2007193318A (ja) * 2005-12-21 2007-08-02 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜および硬化膜を有する素子
JP4849251B2 (ja) * 2007-01-18 2012-01-11 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
JP4947300B2 (ja) * 2007-06-14 2012-06-06 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法
JP5176768B2 (ja) * 2008-08-06 2013-04-03 Ｊｓｒ株式会社 ポジ型感光性絶縁樹脂組成物
JP5423802B2 (ja) * 2009-09-29 2014-02-19 東レ株式会社 ポジ型感光性樹脂組成物、それを用いた硬化膜および光学デバイス
TWI398489B (zh) * 2010-08-31 2013-06-11 Chi Mei Corp 光硬化性聚矽氧烷組成物及其所形成之基材保護膜
TWI432895B (zh) * 2010-12-01 2014-04-01 Chi Mei Corp 感光性聚矽氧烷組成物及其所形成之基材保護膜
JP6098635B2 (ja) * 2012-03-09 2017-03-22 旭硝子株式会社 ポジ型感光性樹脂組成物、隔壁及び光学素子
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JP6690239B2 (ja) * 2014-09-30 2020-04-28 東レ株式会社 感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び半導体装置の製造方法
KR101857145B1 (ko) * 2015-11-05 2018-05-11 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130216952A1 (en) 2010-08-24 2013-08-22 Az Electronic Materials Usa Corp. Positive photosensitive siloxane composition
US20140335452A1 (en) 2011-05-20 2014-11-13 Az Electronic Materials Usa Corp. Positive photosensitive siloxane composition
JP2015146332A (ja) 2014-01-31 2015-08-13 国立大学法人 奈良先端科学技術大学院大学 保護膜を具備する薄膜トランジスタ基板およびその製造方法

Also Published As

Publication number Publication date
CN109073971A (zh) 2018-12-21
US20230109843A1 (en) 2023-04-13
US20190137877A1 (en) 2019-05-09
TW201809866A (zh) 2018-03-16
TWI758290B (zh) 2022-03-21
CN109073971B (zh) 2022-12-20
JP6983812B2 (ja) 2021-12-17
JP2019517023A (ja) 2019-06-20
KR20170131208A (ko) 2017-11-29

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