CN109073971B - 光敏树脂组合物和由其制备的固化膜 - Google Patents
光敏树脂组合物和由其制备的固化膜 Download PDFInfo
- Publication number
- CN109073971B CN109073971B CN201780025959.2A CN201780025959A CN109073971B CN 109073971 B CN109073971 B CN 109073971B CN 201780025959 A CN201780025959 A CN 201780025959A CN 109073971 B CN109073971 B CN 109073971B
- Authority
- CN
- China
- Prior art keywords
- resin composition
- photosensitive resin
- siloxane polymer
- siloxane
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20160061371 | 2016-05-19 | ||
| KR10-2016-0061371 | 2016-05-19 | ||
| KR1020170039208A KR102310794B1 (ko) | 2016-05-19 | 2017-03-28 | 감광성 수지 조성물 및 이로부터 제조된 경화막 |
| KR10-2017-0039208 | 2017-03-28 | ||
| PCT/KR2017/003421 WO2017200201A1 (en) | 2016-05-19 | 2017-03-29 | Photosensitive resin composition and cured film prepared therefrom |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109073971A CN109073971A (zh) | 2018-12-21 |
| CN109073971B true CN109073971B (zh) | 2022-12-20 |
Family
ID=60812284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780025959.2A Active CN109073971B (zh) | 2016-05-19 | 2017-03-29 | 光敏树脂组合物和由其制备的固化膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20190137877A1 (enExample) |
| JP (1) | JP6983812B2 (enExample) |
| KR (1) | KR102310794B1 (enExample) |
| CN (1) | CN109073971B (enExample) |
| TW (1) | TWI758290B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102674721B1 (ko) * | 2018-11-29 | 2024-06-14 | 듀폰스페셜티머터리얼스코리아 유한회사 | 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010039270A (ja) * | 2008-08-06 | 2010-02-18 | Jsr Corp | ポジ型感光性絶縁樹脂組成物 |
| CN102472964A (zh) * | 2009-09-29 | 2012-05-23 | 东丽株式会社 | 正型感光性树脂组合物、使用其的固化膜及光学设备 |
| CN103069341A (zh) * | 2010-08-24 | 2013-04-24 | Az电子材料Ip(日本)株式会社 | 正型感光性硅氧烷组合物 |
| JP2013210558A (ja) * | 2012-03-30 | 2013-10-10 | Fujifilm Corp | 化学増幅型ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置 |
| TW201421162A (zh) * | 2012-09-27 | 2014-06-01 | Shinetsu Chemical Co | 化學增幅正型阻劑材料及圖型形成方法 |
| CN104160336A (zh) * | 2012-03-09 | 2014-11-19 | 旭硝子株式会社 | 正型感光性树脂组合物、分隔壁和光学元件 |
| CN104345567A (zh) * | 2013-07-25 | 2015-02-11 | 奇美实业股份有限公司 | 感光性聚硅氧烷组合物及其应用 |
| CN104797978A (zh) * | 2012-11-22 | 2015-07-22 | Az电子材料(卢森堡)有限公司 | 正型感光性硅氧烷组合物 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1662322B1 (en) | 2004-11-26 | 2017-01-11 | Toray Industries, Inc. | Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film |
| JP2007193318A (ja) * | 2005-12-21 | 2007-08-02 | Toray Ind Inc | 感光性シロキサン組成物、それから形成された硬化膜および硬化膜を有する素子 |
| JP4849251B2 (ja) * | 2007-01-18 | 2012-01-11 | Jsr株式会社 | 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 |
| JP4947300B2 (ja) * | 2007-06-14 | 2012-06-06 | Jsr株式会社 | 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法 |
| TWI398489B (zh) * | 2010-08-31 | 2013-06-11 | Chi Mei Corp | 光硬化性聚矽氧烷組成物及其所形成之基材保護膜 |
| TWI432895B (zh) * | 2010-12-01 | 2014-04-01 | Chi Mei Corp | 感光性聚矽氧烷組成物及其所形成之基材保護膜 |
| JP6043716B2 (ja) * | 2011-05-20 | 2016-12-14 | メルク パテント ゲーエムベーハー | ポジ型感光性シロキサン組成物 |
| KR20150068899A (ko) * | 2013-12-12 | 2015-06-22 | 제이엔씨 주식회사 | 포지티브형 감광성 조성물 |
| JP6237279B2 (ja) | 2014-01-31 | 2017-11-29 | 国立大学法人 奈良先端科学技術大学院大学 | 保護膜を具備する薄膜トランジスタ基板およびその製造方法 |
| JP6902350B2 (ja) * | 2014-07-15 | 2021-07-14 | 日産化学株式会社 | 脂肪族多環構造含有有機基を有するシリコン含有レジスト下層膜形成組成物 |
| JP6690239B2 (ja) * | 2014-09-30 | 2020-04-28 | 東レ株式会社 | 感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び半導体装置の製造方法 |
| KR101857145B1 (ko) * | 2015-11-05 | 2018-05-11 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자 |
-
2017
- 2017-03-28 KR KR1020170039208A patent/KR102310794B1/ko active Active
- 2017-03-29 CN CN201780025959.2A patent/CN109073971B/zh active Active
- 2017-03-29 US US16/097,883 patent/US20190137877A1/en not_active Abandoned
- 2017-03-29 JP JP2018556382A patent/JP6983812B2/ja active Active
- 2017-05-05 TW TW106115050A patent/TWI758290B/zh active
-
2022
- 2022-12-14 US US18/065,798 patent/US20230109843A1/en not_active Abandoned
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010039270A (ja) * | 2008-08-06 | 2010-02-18 | Jsr Corp | ポジ型感光性絶縁樹脂組成物 |
| CN102472964A (zh) * | 2009-09-29 | 2012-05-23 | 东丽株式会社 | 正型感光性树脂组合物、使用其的固化膜及光学设备 |
| CN103069341A (zh) * | 2010-08-24 | 2013-04-24 | Az电子材料Ip(日本)株式会社 | 正型感光性硅氧烷组合物 |
| CN104160336A (zh) * | 2012-03-09 | 2014-11-19 | 旭硝子株式会社 | 正型感光性树脂组合物、分隔壁和光学元件 |
| JP2013210558A (ja) * | 2012-03-30 | 2013-10-10 | Fujifilm Corp | 化学増幅型ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置 |
| TW201421162A (zh) * | 2012-09-27 | 2014-06-01 | Shinetsu Chemical Co | 化學增幅正型阻劑材料及圖型形成方法 |
| CN104797978A (zh) * | 2012-11-22 | 2015-07-22 | Az电子材料(卢森堡)有限公司 | 正型感光性硅氧烷组合物 |
| CN104345567A (zh) * | 2013-07-25 | 2015-02-11 | 奇美实业股份有限公司 | 感光性聚硅氧烷组合物及其应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109073971A (zh) | 2018-12-21 |
| US20230109843A1 (en) | 2023-04-13 |
| US20190137877A1 (en) | 2019-05-09 |
| KR102310794B1 (ko) | 2021-10-12 |
| TW201809866A (zh) | 2018-03-16 |
| TWI758290B (zh) | 2022-03-21 |
| JP6983812B2 (ja) | 2021-12-17 |
| JP2019517023A (ja) | 2019-06-20 |
| KR20170131208A (ko) | 2017-11-29 |
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Legal Events
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Han Guozhongqingnandao Patentee after: DuPont Special Materials Korea Co.,Ltd. Country or region after: Republic of Korea Address before: Han Guozhongqingnandao Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS KOREA Ltd. Country or region before: Republic of Korea |