CN109073971B - 光敏树脂组合物和由其制备的固化膜 - Google Patents

光敏树脂组合物和由其制备的固化膜 Download PDF

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Publication number
CN109073971B
CN109073971B CN201780025959.2A CN201780025959A CN109073971B CN 109073971 B CN109073971 B CN 109073971B CN 201780025959 A CN201780025959 A CN 201780025959A CN 109073971 B CN109073971 B CN 109073971B
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China
Prior art keywords
resin composition
photosensitive resin
siloxane polymer
siloxane
weight
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CN201780025959.2A
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English (en)
Chinese (zh)
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CN109073971A (zh
Inventor
梁钟韩
许槿
权真
罗钟昊
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DuPont Specialty Materials Korea Ltd
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Rohm and Haas Electronic Materials Korea Ltd
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Priority claimed from PCT/KR2017/003421 external-priority patent/WO2017200201A1/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0381Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/124Insulating layers formed between TFT elements and OLED elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40Arrangements for improving the aperture ratio

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN201780025959.2A 2016-05-19 2017-03-29 光敏树脂组合物和由其制备的固化膜 Active CN109073971B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20160061371 2016-05-19
KR10-2016-0061371 2016-05-19
KR1020170039208A KR102310794B1 (ko) 2016-05-19 2017-03-28 감광성 수지 조성물 및 이로부터 제조된 경화막
KR10-2017-0039208 2017-03-28
PCT/KR2017/003421 WO2017200201A1 (en) 2016-05-19 2017-03-29 Photosensitive resin composition and cured film prepared therefrom

Publications (2)

Publication Number Publication Date
CN109073971A CN109073971A (zh) 2018-12-21
CN109073971B true CN109073971B (zh) 2022-12-20

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US (2) US20190137877A1 (enExample)
JP (1) JP6983812B2 (enExample)
KR (1) KR102310794B1 (enExample)
CN (1) CN109073971B (enExample)
TW (1) TWI758290B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102674721B1 (ko) * 2018-11-29 2024-06-14 듀폰스페셜티머터리얼스코리아 유한회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막

Citations (8)

* Cited by examiner, † Cited by third party
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JP2010039270A (ja) * 2008-08-06 2010-02-18 Jsr Corp ポジ型感光性絶縁樹脂組成物
CN102472964A (zh) * 2009-09-29 2012-05-23 东丽株式会社 正型感光性树脂组合物、使用其的固化膜及光学设备
CN103069341A (zh) * 2010-08-24 2013-04-24 Az电子材料Ip(日本)株式会社 正型感光性硅氧烷组合物
JP2013210558A (ja) * 2012-03-30 2013-10-10 Fujifilm Corp 化学増幅型ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置
TW201421162A (zh) * 2012-09-27 2014-06-01 Shinetsu Chemical Co 化學增幅正型阻劑材料及圖型形成方法
CN104160336A (zh) * 2012-03-09 2014-11-19 旭硝子株式会社 正型感光性树脂组合物、分隔壁和光学元件
CN104345567A (zh) * 2013-07-25 2015-02-11 奇美实业股份有限公司 感光性聚硅氧烷组合物及其应用
CN104797978A (zh) * 2012-11-22 2015-07-22 Az电子材料(卢森堡)有限公司 正型感光性硅氧烷组合物

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EP1662322B1 (en) 2004-11-26 2017-01-11 Toray Industries, Inc. Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film
JP2007193318A (ja) * 2005-12-21 2007-08-02 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜および硬化膜を有する素子
JP4849251B2 (ja) * 2007-01-18 2012-01-11 Jsr株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
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JP6237279B2 (ja) 2014-01-31 2017-11-29 国立大学法人 奈良先端科学技術大学院大学 保護膜を具備する薄膜トランジスタ基板およびその製造方法
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KR101857145B1 (ko) * 2015-11-05 2018-05-11 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자

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JP2010039270A (ja) * 2008-08-06 2010-02-18 Jsr Corp ポジ型感光性絶縁樹脂組成物
CN102472964A (zh) * 2009-09-29 2012-05-23 东丽株式会社 正型感光性树脂组合物、使用其的固化膜及光学设备
CN103069341A (zh) * 2010-08-24 2013-04-24 Az电子材料Ip(日本)株式会社 正型感光性硅氧烷组合物
CN104160336A (zh) * 2012-03-09 2014-11-19 旭硝子株式会社 正型感光性树脂组合物、分隔壁和光学元件
JP2013210558A (ja) * 2012-03-30 2013-10-10 Fujifilm Corp 化学増幅型ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置
TW201421162A (zh) * 2012-09-27 2014-06-01 Shinetsu Chemical Co 化學增幅正型阻劑材料及圖型形成方法
CN104797978A (zh) * 2012-11-22 2015-07-22 Az电子材料(卢森堡)有限公司 正型感光性硅氧烷组合物
CN104345567A (zh) * 2013-07-25 2015-02-11 奇美实业股份有限公司 感光性聚硅氧烷组合物及其应用

Also Published As

Publication number Publication date
CN109073971A (zh) 2018-12-21
US20230109843A1 (en) 2023-04-13
US20190137877A1 (en) 2019-05-09
KR102310794B1 (ko) 2021-10-12
TW201809866A (zh) 2018-03-16
TWI758290B (zh) 2022-03-21
JP6983812B2 (ja) 2021-12-17
JP2019517023A (ja) 2019-06-20
KR20170131208A (ko) 2017-11-29

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Address after: Han Guozhongqingnandao

Patentee after: DuPont Special Materials Korea Co.,Ltd.

Country or region after: Republic of Korea

Address before: Han Guozhongqingnandao

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS KOREA Ltd.

Country or region before: Republic of Korea