KR102305948B1 - Led 형광체 패키지를 위한 반사성 땜납 마스크 층 - Google Patents

Led 형광체 패키지를 위한 반사성 땜납 마스크 층 Download PDF

Info

Publication number
KR102305948B1
KR102305948B1 KR1020167019152A KR20167019152A KR102305948B1 KR 102305948 B1 KR102305948 B1 KR 102305948B1 KR 1020167019152 A KR1020167019152 A KR 1020167019152A KR 20167019152 A KR20167019152 A KR 20167019152A KR 102305948 B1 KR102305948 B1 KR 102305948B1
Authority
KR
South Korea
Prior art keywords
layer
mask layer
led
metal bond
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167019152A
Other languages
English (en)
Korean (ko)
Other versions
KR20160101056A (ko
Inventor
이웬 롱
프레데릭 스테판 다이애나
팅 주
그레고리 구스
Original Assignee
루미리즈 홀딩 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 루미리즈 홀딩 비.브이. filed Critical 루미리즈 홀딩 비.브이.
Publication of KR20160101056A publication Critical patent/KR20160101056A/ko
Application granted granted Critical
Publication of KR102305948B1 publication Critical patent/KR102305948B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H01L33/60—
    • H01L33/005—
    • H01L33/04—
    • H01L33/10—
    • H01L33/50—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Device Packages (AREA)
KR1020167019152A 2013-12-18 2014-11-26 Led 형광체 패키지를 위한 반사성 땜납 마스크 층 Active KR102305948B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361917421P 2013-12-18 2013-12-18
US61/917,421 2013-12-18
PCT/IB2014/066349 WO2015092579A1 (en) 2013-12-18 2014-11-26 Reflective solder mask layer for led phosphor package

Publications (2)

Publication Number Publication Date
KR20160101056A KR20160101056A (ko) 2016-08-24
KR102305948B1 true KR102305948B1 (ko) 2021-09-28

Family

ID=52345473

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167019152A Active KR102305948B1 (ko) 2013-12-18 2014-11-26 Led 형광체 패키지를 위한 반사성 땜납 마스크 층

Country Status (6)

Country Link
US (2) US10204887B2 (https=)
EP (1) EP3084849B1 (https=)
JP (1) JP6542227B2 (https=)
KR (1) KR102305948B1 (https=)
CN (1) CN105814704A (https=)
WO (1) WO2015092579A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10204887B2 (en) 2013-12-18 2019-02-12 Lumileds Llc Reflective solder mask layer for LED phosphor package
CN109314170B (zh) * 2015-12-02 2023-05-09 亮锐控股有限公司 用于优化的热阻、焊接可靠性和smt加工良率的led金属焊盘配置
JP2019033160A (ja) * 2017-08-07 2019-02-28 株式会社小糸製作所 基板および車両用灯具
KR20190019745A (ko) * 2017-08-18 2019-02-27 주식회사 루멘스 발광소자 및 그 제조방법
US11153976B2 (en) 2018-05-24 2021-10-19 International Business Machines Corporation Implementing IR reflective mask to minimize CTE mismatch between laminate and PTH copper
EP3598510B1 (en) 2018-07-18 2022-02-23 Lumileds LLC Light emitting diode device and producing methods thereof
CN110737137B (zh) * 2019-10-31 2022-09-13 厦门天马微电子有限公司 Led基板及制作方法、背光模组及显示装置
CN111490142A (zh) * 2020-04-17 2020-08-04 宁波升谱光电股份有限公司 一种紫外led器件
KR102737389B1 (ko) * 2020-04-17 2024-12-03 닝보 선푸 엘이디 컴퍼니 리미티드 자외선 ｌｅｄ 장치
CN111640847A (zh) * 2020-06-01 2020-09-08 江西兆驰光元科技股份有限公司 Led显示器件及其制备方法、显示设备
US11873954B2 (en) 2020-09-03 2024-01-16 Signify Holding B.V. Lighting board and luminaire using the lighting board
TWI815639B (zh) * 2022-09-02 2023-09-11 矽品精密工業股份有限公司 電子封裝件及其製法
TWI871829B (zh) * 2023-11-13 2025-02-01 隆達電子股份有限公司 光源模組

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003185813A (ja) 2001-12-21 2003-07-03 Mitsui Chemicals Inc 反射体およびその用途
JP2008091459A (ja) 2006-09-29 2008-04-17 Rohm Co Ltd Ｌｅｄ照明装置及びその製造方法
JP2012174808A (ja) 2011-02-18 2012-09-10 Nichia Chem Ind Ltd 発光素子搭載用基板および発光装置
JP2012227293A (ja) 2011-04-18 2012-11-15 Ibiden Co Ltd ソルダーレジスト、ソルダーレジスト原料、ｌｅｄ基板、発光モジュール、発光モジュールを有する機器、ｌｅｄ基板の製造方法、発光モジュールの製造方法、及び発光モジュールを有する機器の製造方法
JP2012243846A (ja) * 2011-05-17 2012-12-10 Sumitomo Chemical Co Ltd 金属ベース回路基板および発光素子

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6120883A (en) * 1996-08-19 2000-09-19 Furon Company Computer printable top coating
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
US6841623B2 (en) * 2001-06-29 2005-01-11 Bayer Inc. Low molecular weight nitrile rubber
US8574959B2 (en) 2003-11-10 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of forming bump-on-lead interconnection
TWI534915B (zh) 2003-11-10 2016-05-21 恰巴克有限公司 引線上凸塊之倒裝晶片互連
US20050270755A1 (en) * 2004-06-04 2005-12-08 Inventec Corporation Method for preventing pins of semiconductor package from short circuit during soldering
WO2006005062A2 (en) 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
CA2726173C (en) * 2008-05-29 2016-02-23 Denki Kagaku Kogyo Kabushiki Kaisha Metal base circuit board
KR20110028307A (ko) * 2008-05-29 2011-03-17 크리 인코포레이티드 근거리장 영역 혼합을 갖는 광원
KR101039957B1 (ko) * 2008-11-18 2011-06-09 엘지이노텍 주식회사 발광 장치 및 이를 구비한 디스플레이 장치
KR101064026B1 (ko) 2009-02-17 2011-09-08 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
EP2228841A1 (en) 2009-03-09 2010-09-15 Ledon Lighting Jennersdorf GmbH LED module with improved light output
US8184230B2 (en) 2009-05-08 2012-05-22 Honeywell International Inc. High efficiency backlight assembly for flat panel display assembly and method for the manufacture thereof
US20110049545A1 (en) 2009-09-02 2011-03-03 Koninklijke Philips Electronics N.V. Led package with phosphor plate and reflective substrate
CN102884645B (zh) * 2010-01-29 2015-05-27 西铁城电子株式会社 发光装置的制造方法以及发光装置
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
DE102010029368B4 (de) 2010-05-27 2026-02-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektronische Anordnung
CN102315185A (zh) * 2010-06-29 2012-01-11 昆山旭扬电子材料有限公司 电子组件模块
WO2012016226A1 (en) * 2010-07-30 2012-02-02 Bytemobile, Inc. Systems and methods for video cache indexing
JP2012089357A (ja) 2010-10-20 2012-05-10 Sumitomo Light Metal Ind Ltd Ｌｅｄ照明基板用積層体及びそれを用いたｌｅｄ照明
TWI441361B (zh) 2010-12-31 2014-06-11 英特明光能股份有限公司 發光二極體封裝結構及其製造方法
US9461023B2 (en) 2011-10-28 2016-10-04 Bridgelux, Inc. Jetting a highly reflective layer onto an LED assembly
EP2500623A1 (en) 2011-03-18 2012-09-19 Koninklijke Philips Electronics N.V. Method for providing a reflective coating to a substrate for a light-emitting device
JPWO2013001686A1 (ja) 2011-06-29 2015-02-23 パナソニック株式会社 発光装置
KR101850431B1 (ko) 2011-07-07 2018-05-31 엘지이노텍 주식회사 발광 모듈 및 이를 포함하는 조명 시스템
KR101246087B1 (ko) * 2011-07-08 2013-03-21 한전원자력연료 주식회사 솔레노이드 밸브 박스를 내장한 핵연료 집합체의 성능 검사 테이블
JP2013033843A (ja) * 2011-08-02 2013-02-14 Sony Corp 回路基板、回路基板の製造方法、表示装置および電子機器
US20130032211A1 (en) * 2011-08-03 2013-02-07 National Tsing Hua University Air Compression System Having Characteristic of Storing Unstable Energy and Method for Controlling the Same
KR101142434B1 (ko) * 2011-09-08 2012-05-08 (주)오비메드 조기양막파수 산모에서 비침습적인 양수 내 염증 및 감염의 예측 또는 진단 방법
US8597982B2 (en) * 2011-10-31 2013-12-03 Nordson Corporation Methods of fabricating electronics assemblies
JP2013135084A (ja) * 2011-12-26 2013-07-08 Nitto Denko Corp 発光ダイオード装置の製造方法
US8541802B2 (en) * 2012-01-31 2013-09-24 Bridgelux, Inc. Phosphor placement in white light emitting diode assemblies
US20130264970A1 (en) * 2012-04-06 2013-10-10 Yew Cheong Kuan Light emitting diode (led) components and methods for improved light extraction
US9383496B2 (en) * 2012-06-05 2016-07-05 Rambus Delaware Llc Edge lit lighting assembly with spectrum adjuster
US9590155B2 (en) * 2012-06-06 2017-03-07 Cree, Inc. Light emitting devices and substrates with improved plating
US10204887B2 (en) 2013-12-18 2019-02-12 Lumileds Llc Reflective solder mask layer for LED phosphor package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003185813A (ja) 2001-12-21 2003-07-03 Mitsui Chemicals Inc 反射体およびその用途
JP2008091459A (ja) 2006-09-29 2008-04-17 Rohm Co Ltd Ｌｅｄ照明装置及びその製造方法
JP2012174808A (ja) 2011-02-18 2012-09-10 Nichia Chem Ind Ltd 発光素子搭載用基板および発光装置
JP2012227293A (ja) 2011-04-18 2012-11-15 Ibiden Co Ltd ソルダーレジスト、ソルダーレジスト原料、ｌｅｄ基板、発光モジュール、発光モジュールを有する機器、ｌｅｄ基板の製造方法、発光モジュールの製造方法、及び発光モジュールを有する機器の製造方法
JP2012243846A (ja) * 2011-05-17 2012-12-10 Sumitomo Chemical Co Ltd 金属ベース回路基板および発光素子

Also Published As

Publication number Publication date
JP6542227B2 (ja) 2019-07-10
JP2017501578A (ja) 2017-01-12
US11189601B2 (en) 2021-11-30
US20160315069A1 (en) 2016-10-27
CN105814704A (zh) 2016-07-27
KR20160101056A (ko) 2016-08-24
US10204887B2 (en) 2019-02-12
WO2015092579A1 (en) 2015-06-25
US20190304956A1 (en) 2019-10-03
EP3084849A1 (en) 2016-10-26
EP3084849B1 (en) 2019-10-02

Similar Documents

Publication Publication Date Title
KR102305948B1 (ko) Led 형광체 패키지를 위한 반사성 땜납 마스크 층
KR102349834B1 (ko) 발광장치
CN102237483B (zh) 发光装置
US9512968B2 (en) LED module
EP2312657B1 (en) Method of manufacturing light emitting diode device
US8399267B2 (en) Methods for packaging light emitting devices and related microelectronic devices
JP6354273B2 (ja) 発光装置及び発光装置の製造方法
US9293663B1 (en) Light-emitting unit and semiconductor light-emitting device
CN102270730A (zh) 一种无金线的led器件
CN1926694A (zh) 发光器件的制造方法和发光器件
EP2461380A2 (en) Light emitting device package and manufacturing method thereof
KR20110000730A (ko) 표면 실장 ｌｅｄ 모듈 및 표면 실장 ｌｅｄ 모듈의 제조 방법
JP5662064B2 (ja) 発光装置
KR20120094280A (ko) 발광소자 패키지 및 그 제조방법
TW201349598A (zh) 發光半導體元件及其製作方法
CN106997888A (zh) 发光二极管显示装置
US10355180B2 (en) Light emitting device and light emitting module
CN1941439B (zh) 发光装置及其制造方法
US9954144B2 (en) Wafer level contact pad solder bumping for surface mount devices with non-planar recessed contacting surfaces
JP2018022859A (ja) 発光装置及びその製造方法
KR101543724B1 (ko) 반도체 발광소자 및 이를 제조하는 방법
KR20130091102A (ko) Ｌｅｄ 패키지 및 그 제조방법
JP2021106184A (ja) 発光装置
KR20150024652A (ko) 반도체 발광소자 및 이를 제조하는 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160715

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20180214

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20191126

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20201119

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20210617

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210917

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210917

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20250211

Start annual number: 4

End annual number: 4