KR102302306B1 - 보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법 - Google Patents

보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법 Download PDF

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KR102302306B1
KR102302306B1 KR1020150015443A KR20150015443A KR102302306B1 KR 102302306 B1 KR102302306 B1 KR 102302306B1 KR 1020150015443 A KR1020150015443 A KR 1020150015443A KR 20150015443 A KR20150015443 A KR 20150015443A KR 102302306 B1 KR102302306 B1 KR 102302306B1
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South Korea
Prior art keywords
thin film
film transistor
protective film
polysiloxane
transistor substrate
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KR1020150015443A
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English (en)
Korean (ko)
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KR20150091265A (ko
Inventor
야스아키 이시카와
유키하루 우라오카
도시아키 노나카
Original Assignee
고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠
에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
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Application filed by 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠, 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. filed Critical 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠
Publication of KR20150091265A publication Critical patent/KR20150091265A/ko
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Publication of KR102302306B1 publication Critical patent/KR102302306B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0715—Polysiloxane

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Manufacturing & Machinery (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020150015443A 2014-01-31 2015-01-30 보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법 KR102302306B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-017619 2014-01-31
JP2014017619A JP6237279B2 (ja) 2014-01-31 2014-01-31 保護膜を具備する薄膜トランジスタ基板およびその製造方法

Publications (2)

Publication Number Publication Date
KR20150091265A KR20150091265A (ko) 2015-08-10
KR102302306B1 true KR102302306B1 (ko) 2021-09-17

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KR1020150015443A KR102302306B1 (ko) 2014-01-31 2015-01-30 보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법

Country Status (4)

Country Link
JP (1) JP6237279B2 (ja)
KR (1) KR102302306B1 (ja)
CN (1) CN104821337B (ja)
TW (1) TWI626511B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR101862710B1 (ko) * 2015-10-30 2018-05-30 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
TW201723096A (zh) * 2015-12-31 2017-07-01 奇美實業股份有限公司 感光性樹脂組成物及其應用
WO2017200201A1 (en) * 2016-05-19 2017-11-23 Rohm And Haas Electronic Materials Korea Ltd. Photosensitive resin composition and cured film prepared therefrom
KR102310794B1 (ko) * 2016-05-19 2021-10-12 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
JP6852296B2 (ja) * 2016-07-19 2021-03-31 株式会社リコー 電界効果型トランジスタの製造方法
US10916661B2 (en) 2016-11-28 2021-02-09 Merck Patent Gmbh Thin film transistor substrate provided with protective film and method for producing same
KR102028642B1 (ko) * 2016-12-19 2019-10-04 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 전자 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026400A1 (ja) * 2010-08-24 2012-03-01 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性シロキサン組成物
WO2013108301A1 (ja) 2012-01-20 2013-07-25 パナソニック株式会社 薄膜トランジスタ
WO2013151167A1 (ja) * 2012-04-06 2013-10-10 Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 ネガ型感光性シロキサン組成物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
CN101896537B (zh) * 2007-12-10 2012-10-24 株式会社钟化 具有碱显影性的固化性组合物、使用该组合物的绝缘性薄膜以及薄膜晶体管
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
EP2685505B1 (en) * 2011-03-11 2016-12-21 Sharp Kabushiki Kaisha Thin-film transistor and display device
JP5977569B2 (ja) 2011-04-22 2016-08-24 株式会社神戸製鋼所 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
WO2012161025A1 (ja) * 2011-05-20 2012-11-29 ＡｚエレクトロニックマテリアルズＩｐ株式会社 ポジ型感光性シロキサン組成物
KR20130042867A (ko) * 2011-10-19 2013-04-29 삼성디스플레이 주식회사 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
JP5965696B2 (ja) 2012-03-29 2016-08-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP6175740B2 (ja) 2012-03-30 2017-08-09 株式会社Ｊｏｌｅｄ 薄膜トランジスタおよびその製造方法並びに表示装置および電子機器
JP6306278B2 (ja) * 2012-04-09 2018-04-04 Jsr株式会社 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026400A1 (ja) * 2010-08-24 2012-03-01 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性シロキサン組成物
WO2013108301A1 (ja) 2012-01-20 2013-07-25 パナソニック株式会社 薄膜トランジスタ
WO2013151167A1 (ja) * 2012-04-06 2013-10-10 Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 ネガ型感光性シロキサン組成物

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Publication number Publication date
JP6237279B2 (ja) 2017-11-29
KR20150091265A (ko) 2015-08-10
JP2015146332A (ja) 2015-08-13
CN104821337A (zh) 2015-08-05
TW201535055A (zh) 2015-09-16
TWI626511B (zh) 2018-06-11
CN104821337B (zh) 2019-04-19

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