KR102300718B1 - 자외선 발광 다이오드 및 그것을 구비한 전기 기기 - Google Patents

자외선 발광 다이오드 및 그것을 구비한 전기 기기 Download PDF

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KR102300718B1
KR102300718B1 KR1020140149643A KR20140149643A KR102300718B1 KR 102300718 B1 KR102300718 B1 KR 102300718B1 KR 1020140149643 A KR1020140149643 A KR 1020140149643A KR 20140149643 A KR20140149643 A KR 20140149643A KR 102300718 B1 KR102300718 B1 KR 102300718B1
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ultraviolet light
light emitting
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wavelength
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KR20150123138A (ko
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히데키 히라야마
노리토시 마에다
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고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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KR1020140149643A 2014-04-24 2014-10-30 자외선 발광 다이오드 및 그것을 구비한 전기 기기 Active KR102300718B1 (ko)

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JPJP-P-2014-090632 2014-04-24
JP2014090632 2014-04-24

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KR20150123138A KR20150123138A (ko) 2015-11-03
KR102300718B1 true KR102300718B1 (ko) 2021-09-09

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JP (1) JP7100903B2 (https=)
KR (1) KR102300718B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250169949A (ko) 2024-05-27 2025-12-04 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 박막형 칩 구조의 고출력 자외선 발광소자 및 그 제조방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102329719B1 (ko) 2015-02-23 2021-11-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 라이트 유닛
JP6902255B2 (ja) * 2016-02-01 2021-07-14 国立研究開発法人理化学研究所 紫外線発光素子
US11201261B2 (en) * 2017-02-17 2021-12-14 Dowa Electronics Materials Co., Ltd. Deep ultraviolet light emitting element and method of manufacturing the same
JP6727185B2 (ja) * 2017-12-28 2020-07-22 日機装株式会社 窒化物半導体発光素子
JP7291357B1 (ja) 2022-02-24 2023-06-15 国立研究開発法人理化学研究所 紫外発光素子およびそれを備える電気機器
CN117374189B (zh) * 2023-09-28 2025-03-28 华引芯（武汉）科技有限公司 一种发光元件的制备方法及发光元件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250611A (ja) * 2006-03-14 2007-09-27 Stanley Electric Co Ltd 窒化物半導体発光素子およびその製造方法
WO2011104969A1 (ja) * 2010-02-24 2011-09-01 独立行政法人理化学研究所 窒化物半導体多重量子障壁を有する発光素子及びその製造方法
JP2012533874A (ja) * 2009-07-17 2012-12-27 フォルシュングスフェアブント ベルリン エー ファウ Ｐ型コンタクトおよび紫外スペクトル領域用の発光ダイオード

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4538476B2 (ja) 2007-08-27 2010-09-08 独立行政法人理化学研究所 半導体構造の形成方法
US9142741B2 (en) 2011-06-15 2015-09-22 Sensor Electronic Technology, Inc. Emitting device with improved extraction
JP5514920B2 (ja) 2012-01-13 2014-06-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物エピタキシャル基板および該基板を用いた深紫外発光素子
JP5774650B2 (ja) 2013-08-13 2015-09-09 株式会社東芝 半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250611A (ja) * 2006-03-14 2007-09-27 Stanley Electric Co Ltd 窒化物半導体発光素子およびその製造方法
JP2012533874A (ja) * 2009-07-17 2012-12-27 フォルシュングスフェアブント ベルリン エー ファウ Ｐ型コンタクトおよび紫外スペクトル領域用の発光ダイオード
WO2011104969A1 (ja) * 2010-02-24 2011-09-01 独立行政法人理化学研究所 窒化物半導体多重量子障壁を有する発光素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250169949A (ko) 2024-05-27 2025-12-04 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 박막형 칩 구조의 고출력 자외선 발광소자 및 그 제조방법

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JP7100903B2 (ja) 2022-07-14
JP2020061579A (ja) 2020-04-16
KR20150123138A (ko) 2015-11-03

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