JP7100903B2 - 紫外発光ダイオードおよびそれを備える電気機器 - Google Patents

紫外発光ダイオードおよびそれを備える電気機器 Download PDF

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JP7100903B2
JP7100903B2 JP2020001679A JP2020001679A JP7100903B2 JP 7100903 B2 JP7100903 B2 JP 7100903B2 JP 2020001679 A JP2020001679 A JP 2020001679A JP 2020001679 A JP2020001679 A JP 2020001679A JP 7100903 B2 JP7100903 B2 JP 7100903B2
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layer
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light emitting
ultraviolet light
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JP2020061579A5 (https=
JP2020061579A (ja
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秀樹 平山
哲利 前田
昌史 定
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RIKEN
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RIKEN
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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JP2020001679A 2014-04-24 2020-01-08 紫外発光ダイオードおよびそれを備える電気機器 Active JP7100903B2 (ja)

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JP2014090632 2014-04-24
JP2014090632 2014-04-24

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JP2015017909A Division JP2015216352A (ja) 2014-04-24 2015-01-30 紫外発光ダイオードおよびそれを備える電気機器

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JP2020061579A5 JP2020061579A5 (https=) 2021-05-06
JP7100903B2 true JP7100903B2 (ja) 2022-07-14

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KR (1) KR102300718B1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102329719B1 (ko) 2015-02-23 2021-11-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 라이트 유닛
JP6902255B2 (ja) * 2016-02-01 2021-07-14 国立研究開発法人理化学研究所 紫外線発光素子
US11201261B2 (en) * 2017-02-17 2021-12-14 Dowa Electronics Materials Co., Ltd. Deep ultraviolet light emitting element and method of manufacturing the same
JP6727185B2 (ja) * 2017-12-28 2020-07-22 日機装株式会社 窒化物半導体発光素子
JP7291357B1 (ja) 2022-02-24 2023-06-15 国立研究開発法人理化学研究所 紫外発光素子およびそれを備える電気機器
CN117374189B (zh) * 2023-09-28 2025-03-28 华引芯（武汉）科技有限公司 一种发光元件的制备方法及发光元件
KR20250169949A (ko) 2024-05-27 2025-12-04 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 박막형 칩 구조의 고출력 자외선 발광소자 및 그 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250611A (ja) 2006-03-14 2007-09-27 Stanley Electric Co Ltd 窒化物半導体発光素子およびその製造方法
WO2011104969A1 (ja) 2010-02-24 2011-09-01 独立行政法人理化学研究所 窒化物半導体多重量子障壁を有する発光素子及びその製造方法
JP2012533874A (ja) 2009-07-17 2012-12-27 フォルシュングスフェアブント ベルリン エー ファウ Ｐ型コンタクトおよび紫外スペクトル領域用の発光ダイオード
JP2013165261A (ja) 2012-01-13 2013-08-22 Dowa Electronics Materials Co Ltd Ｉｉｉ族窒化物エピタキシャル基板および該基板を用いた深紫外発光素子
JP2013251572A (ja) 2013-08-13 2013-12-12 Toshiba Corp 半導体発光素子
US20140008675A1 (en) 2011-06-15 2014-01-09 Maxim S. Shatalov Emitting Device with Improved Extraction

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4538476B2 (ja) 2007-08-27 2010-09-08 独立行政法人理化学研究所 半導体構造の形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250611A (ja) 2006-03-14 2007-09-27 Stanley Electric Co Ltd 窒化物半導体発光素子およびその製造方法
JP2012533874A (ja) 2009-07-17 2012-12-27 フォルシュングスフェアブント ベルリン エー ファウ Ｐ型コンタクトおよび紫外スペクトル領域用の発光ダイオード
WO2011104969A1 (ja) 2010-02-24 2011-09-01 独立行政法人理化学研究所 窒化物半導体多重量子障壁を有する発光素子及びその製造方法
US20140008675A1 (en) 2011-06-15 2014-01-09 Maxim S. Shatalov Emitting Device with Improved Extraction
JP2013165261A (ja) 2012-01-13 2013-08-22 Dowa Electronics Materials Co Ltd Ｉｉｉ族窒化物エピタキシャル基板および該基板を用いた深紫外発光素子
JP2013251572A (ja) 2013-08-13 2013-12-12 Toshiba Corp 半導体発光素子

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Sachie FUJIKAWA et al.，Realization of 340-nm-Band High-Output-Power (>7mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN，Japanese Journal of Applied Physics，日本，The Japan Society of Applied Physics，2008年04月25日，Vol.47, No.4，pp.2941-2944
前田哲利, 平山秀樹，透明p型AlGaNを用いた高効率深紫外LEDの実現，信学技報，日本，一般社団法人 電子情報通信学会，2013年11月21日，vol.113, no.331，pp.87-90

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JP2020061579A (ja) 2020-04-16
KR20150123138A (ko) 2015-11-03

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