KR102267989B1 - 패키지 기판의 가공 방법 - Google Patents

패키지 기판의 가공 방법 Download PDF

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Publication number
KR102267989B1
KR102267989B1 KR1020150177067A KR20150177067A KR102267989B1 KR 102267989 B1 KR102267989 B1 KR 102267989B1 KR 1020150177067 A KR1020150177067 A KR 1020150177067A KR 20150177067 A KR20150177067 A KR 20150177067A KR 102267989 B1 KR102267989 B1 KR 102267989B1
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KR
South Korea
Prior art keywords
cutting
resin
heat diffusion
substrate
diffusion substrate
Prior art date
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KR1020150177067A
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English (en)
Korean (ko)
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KR20160073920A (ko
Inventor
구니미츠 다카하시
노부카즈 데지마
마사야 다케우치
세이지 후지와라
치카라 아이카와
Original Assignee
가부시기가이샤 디스코
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Publication of KR20160073920A publication Critical patent/KR20160073920A/ko
Application granted granted Critical
Publication of KR102267989B1 publication Critical patent/KR102267989B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Dicing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020150177067A 2014-12-17 2015-12-11 패키지 기판의 가공 방법 KR102267989B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014254930A JP6377514B2 (ja) 2014-12-17 2014-12-17 パッケージ基板の加工方法
JPJP-P-2014-254930 2014-12-17

Publications (2)

Publication Number Publication Date
KR20160073920A KR20160073920A (ko) 2016-06-27
KR102267989B1 true KR102267989B1 (ko) 2021-06-21

Family

ID=56142242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150177067A KR102267989B1 (ko) 2014-12-17 2015-12-11 패키지 기판의 가공 방법

Country Status (4)

Country Link
JP (1) JP6377514B2 (zh)
KR (1) KR102267989B1 (zh)
CN (1) CN105719974B (zh)
TW (1) TWI673783B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190028302A (ko) * 2017-09-08 2019-03-18 가부시기가이샤 디스코 웨이퍼의 가공 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018113281A (ja) * 2017-01-06 2018-07-19 株式会社ディスコ 樹脂パッケージ基板の加工方法
JP2018176399A (ja) * 2017-04-21 2018-11-15 株式会社ディスコ 金属基板の溝形成方法
JP6821261B2 (ja) * 2017-04-21 2021-01-27 株式会社ディスコ 被加工物の加工方法
JP6890893B2 (ja) * 2017-08-08 2021-06-18 株式会社ディスコ 金属が露出した基板の加工方法
TWI695459B (zh) * 2018-09-07 2020-06-01 矽品精密工業股份有限公司 電子封裝結構及其製法
JP7190295B2 (ja) * 2018-09-13 2022-12-15 株式会社ディスコ 切削装置及びパッケージ基板の加工方法
CN111047970B (zh) * 2019-11-21 2022-04-19 昆山国显光电有限公司 一种显示面板和显示面板母板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020031899A1 (en) 1999-06-08 2002-03-14 Ran Manor Apparatus and method for singulating semiconductor wafers
JP2010212478A (ja) 2009-03-11 2010-09-24 Panasonic Corp レーザ加工方法およびレーザ加工装置

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US6562698B2 (en) * 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
JP4662092B2 (ja) * 2000-01-20 2011-03-30 日東電工株式会社 半導体基板切断時固定用シート
SG108262A1 (en) * 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
JP3802821B2 (ja) * 2002-02-22 2006-07-26 新日本無線株式会社 電子部品のリード切断方法
JP2005228892A (ja) * 2004-02-12 2005-08-25 Toshiba Corp 半導体ウェーハと半導体素子およびその製造方法
US20070272666A1 (en) * 2006-05-25 2007-11-29 O'brien James N Infrared laser wafer scribing using short pulses
JP5166929B2 (ja) 2008-03-18 2013-03-21 株式会社ディスコ 光デバイスの製造方法
JP2010021389A (ja) * 2008-07-11 2010-01-28 Murata Mfg Co Ltd 樹脂モールド型電子部品の製造方法。
JP2010103327A (ja) * 2008-10-24 2010-05-06 Disco Abrasive Syst Ltd デバイスの製造方法
JP5261168B2 (ja) * 2008-12-26 2013-08-14 Ｔｏｗａ株式会社 電子部品製造用の切断装置及び切断方法
JP5970209B2 (ja) * 2012-03-13 2016-08-17 Ｔｏｗａ株式会社 積層基板の切断方法および電子部品の製造方法
JP5996260B2 (ja) * 2012-05-09 2016-09-21 株式会社ディスコ 被加工物の分割方法
JP6078376B2 (ja) * 2013-02-22 2017-02-08 株式会社ディスコ ウエーハの加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020031899A1 (en) 1999-06-08 2002-03-14 Ran Manor Apparatus and method for singulating semiconductor wafers
JP2010212478A (ja) 2009-03-11 2010-09-24 Panasonic Corp レーザ加工方法およびレーザ加工装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190028302A (ko) * 2017-09-08 2019-03-18 가부시기가이샤 디스코 웨이퍼의 가공 방법
KR102581129B1 (ko) 2017-09-08 2023-09-20 가부시기가이샤 디스코 웨이퍼의 가공 방법

Also Published As

Publication number Publication date
CN105719974A (zh) 2016-06-29
JP6377514B2 (ja) 2018-08-22
KR20160073920A (ko) 2016-06-27
TW201633385A (zh) 2016-09-16
JP2016115867A (ja) 2016-06-23
TWI673783B (zh) 2019-10-01
CN105719974B (zh) 2019-07-30

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