KR102267989B1 - 패키지 기판의 가공 방법 - Google Patents
패키지 기판의 가공 방법 Download PDFInfo
- Publication number
- KR102267989B1 KR102267989B1 KR1020150177067A KR20150177067A KR102267989B1 KR 102267989 B1 KR102267989 B1 KR 102267989B1 KR 1020150177067 A KR1020150177067 A KR 1020150177067A KR 20150177067 A KR20150177067 A KR 20150177067A KR 102267989 B1 KR102267989 B1 KR 102267989B1
- Authority
- KR
- South Korea
- Prior art keywords
- cutting
- resin
- heat diffusion
- substrate
- diffusion substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 238000003672 processing method Methods 0.000 title 1
- 238000005520 cutting process Methods 0.000 claims abstract description 111
- 229920005989 resin Polymers 0.000 claims abstract description 64
- 239000011347 resin Substances 0.000 claims abstract description 64
- 238000009792 diffusion process Methods 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000001678 irradiating effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 11
- 238000003754 machining Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Laser Beam Processing (AREA)
- High Energy & Nuclear Physics (AREA)
- Dicing (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014254930A JP6377514B2 (ja) | 2014-12-17 | 2014-12-17 | パッケージ基板の加工方法 |
JPJP-P-2014-254930 | 2014-12-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20160073920A KR20160073920A (ko) | 2016-06-27 |
KR102267989B1 true KR102267989B1 (ko) | 2021-06-21 |
Family
ID=56142242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150177067A KR102267989B1 (ko) | 2014-12-17 | 2015-12-11 | 패키지 기판의 가공 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6377514B2 (zh) |
KR (1) | KR102267989B1 (zh) |
CN (1) | CN105719974B (zh) |
TW (1) | TWI673783B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190028302A (ko) * | 2017-09-08 | 2019-03-18 | 가부시기가이샤 디스코 | 웨이퍼의 가공 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018113281A (ja) * | 2017-01-06 | 2018-07-19 | 株式会社ディスコ | 樹脂パッケージ基板の加工方法 |
JP2018176399A (ja) * | 2017-04-21 | 2018-11-15 | 株式会社ディスコ | 金属基板の溝形成方法 |
JP6821261B2 (ja) * | 2017-04-21 | 2021-01-27 | 株式会社ディスコ | 被加工物の加工方法 |
JP6890893B2 (ja) * | 2017-08-08 | 2021-06-18 | 株式会社ディスコ | 金属が露出した基板の加工方法 |
TWI695459B (zh) * | 2018-09-07 | 2020-06-01 | 矽品精密工業股份有限公司 | 電子封裝結構及其製法 |
JP7190295B2 (ja) * | 2018-09-13 | 2022-12-15 | 株式会社ディスコ | 切削装置及びパッケージ基板の加工方法 |
CN111047970B (zh) * | 2019-11-21 | 2022-04-19 | 昆山国显光电有限公司 | 一种显示面板和显示面板母板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020031899A1 (en) | 1999-06-08 | 2002-03-14 | Ran Manor | Apparatus and method for singulating semiconductor wafers |
JP2010212478A (ja) | 2009-03-11 | 2010-09-24 | Panasonic Corp | レーザ加工方法およびレーザ加工装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6562698B2 (en) * | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
JP4662092B2 (ja) * | 2000-01-20 | 2011-03-30 | 日東電工株式会社 | 半導体基板切断時固定用シート |
SG108262A1 (en) * | 2001-07-06 | 2005-01-28 | Inst Data Storage | Method and apparatus for cutting a multi-layer substrate by dual laser irradiation |
JP3802821B2 (ja) * | 2002-02-22 | 2006-07-26 | 新日本無線株式会社 | 電子部品のリード切断方法 |
JP2005228892A (ja) * | 2004-02-12 | 2005-08-25 | Toshiba Corp | 半導体ウェーハと半導体素子およびその製造方法 |
US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
JP5166929B2 (ja) | 2008-03-18 | 2013-03-21 | 株式会社ディスコ | 光デバイスの製造方法 |
JP2010021389A (ja) * | 2008-07-11 | 2010-01-28 | Murata Mfg Co Ltd | 樹脂モールド型電子部品の製造方法。 |
JP2010103327A (ja) * | 2008-10-24 | 2010-05-06 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP5261168B2 (ja) * | 2008-12-26 | 2013-08-14 | Towa株式会社 | 電子部品製造用の切断装置及び切断方法 |
JP5970209B2 (ja) * | 2012-03-13 | 2016-08-17 | Towa株式会社 | 積層基板の切断方法および電子部品の製造方法 |
JP5996260B2 (ja) * | 2012-05-09 | 2016-09-21 | 株式会社ディスコ | 被加工物の分割方法 |
JP6078376B2 (ja) * | 2013-02-22 | 2017-02-08 | 株式会社ディスコ | ウエーハの加工方法 |
-
2014
- 2014-12-17 JP JP2014254930A patent/JP6377514B2/ja active Active
-
2015
- 2015-11-09 TW TW104136846A patent/TWI673783B/zh active
- 2015-12-11 KR KR1020150177067A patent/KR102267989B1/ko active IP Right Grant
- 2015-12-14 CN CN201510923239.0A patent/CN105719974B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020031899A1 (en) | 1999-06-08 | 2002-03-14 | Ran Manor | Apparatus and method for singulating semiconductor wafers |
JP2010212478A (ja) | 2009-03-11 | 2010-09-24 | Panasonic Corp | レーザ加工方法およびレーザ加工装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190028302A (ko) * | 2017-09-08 | 2019-03-18 | 가부시기가이샤 디스코 | 웨이퍼의 가공 방법 |
KR102581129B1 (ko) | 2017-09-08 | 2023-09-20 | 가부시기가이샤 디스코 | 웨이퍼의 가공 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20160073920A (ko) | 2016-06-27 |
CN105719974A (zh) | 2016-06-29 |
TWI673783B (zh) | 2019-10-01 |
TW201633385A (zh) | 2016-09-16 |
JP2016115867A (ja) | 2016-06-23 |
JP6377514B2 (ja) | 2018-08-22 |
CN105719974B (zh) | 2019-07-30 |
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