KR102260237B1 - 리세싱된 실리콘 캡이 있는 트랜지스터 및 그 형성 방법 - Google Patents
리세싱된 실리콘 캡이 있는 트랜지스터 및 그 형성 방법 Download PDFInfo
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- KR102260237B1 KR102260237B1 KR1020190108209A KR20190108209A KR102260237B1 KR 102260237 B1 KR102260237 B1 KR 102260237B1 KR 1020190108209 A KR1020190108209 A KR 1020190108209A KR 20190108209 A KR20190108209 A KR 20190108209A KR 102260237 B1 KR102260237 B1 KR 102260237B1
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- 238000000034 method Methods 0.000 title claims abstract description 158
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 73
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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US11088028B2 (en) * | 2018-11-30 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field-effect transistor device and method of forming the same |
US11069784B2 (en) * | 2019-05-17 | 2021-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
CN112216608A (zh) * | 2019-07-10 | 2021-01-12 | 中芯国际集成电路制造(上海)有限公司 | 生成物层的处理方法 |
US11728413B2 (en) * | 2020-07-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate capping structures in semiconductor devices |
TWI786559B (zh) * | 2021-03-02 | 2022-12-11 | 南亞科技股份有限公司 | 半導體結構及其形成方法 |
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