KR102254858B1 - 핀 기반의 전계 효과 트랜지스터 - Google Patents
핀 기반의 전계 효과 트랜지스터 Download PDFInfo
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- KR102254858B1 KR102254858B1 KR1020190072445A KR20190072445A KR102254858B1 KR 102254858 B1 KR102254858 B1 KR 102254858B1 KR 1020190072445 A KR1020190072445 A KR 1020190072445A KR 20190072445 A KR20190072445 A KR 20190072445A KR 102254858 B1 KR102254858 B1 KR 102254858B1
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US16/353,664 US11257818B2 (en) | 2018-09-27 | 2019-03-14 | Fin-based field effect transistors |
US16/353,664 | 2019-03-14 |
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US9064709B2 (en) * | 2012-09-28 | 2015-06-23 | Intel Corporation | High breakdown voltage III-N depletion mode MOS capacitors |
US8768271B1 (en) * | 2012-12-19 | 2014-07-01 | Intel Corporation | Group III-N transistors on nanoscale template structures |
US9337279B2 (en) * | 2014-03-03 | 2016-05-10 | Infineon Technologies Austria Ag | Group III-nitride-based enhancement mode transistor |
US9064976B1 (en) * | 2014-12-02 | 2015-06-23 | International Business Machines Corporation | Modeling charge distribution on FinFET sidewalls |
US9318622B1 (en) * | 2015-06-23 | 2016-04-19 | International Business Machines Corporation | Fin-type PIN diode array |
US11018253B2 (en) * | 2016-01-07 | 2021-05-25 | Lawrence Livermore National Security, Llc | Three dimensional vertically structured electronic devices |
US10340383B2 (en) * | 2016-03-25 | 2019-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having stressor layer |
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US10672884B2 (en) * | 2016-09-28 | 2020-06-02 | Intel Corporation | Schottky diodes on semipolar planes of group III-N material structures |
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