KR102234175B1 - 양방향 양극성 트랜지스터를 갖는 시스템, 회로, 디바이스 및 방법 - Google Patents

양방향 양극성 트랜지스터를 갖는 시스템, 회로, 디바이스 및 방법 Download PDF

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KR102234175B1
KR102234175B1 KR1020157031412A KR20157031412A KR102234175B1 KR 102234175 B1 KR102234175 B1 KR 102234175B1 KR 1020157031412 A KR1020157031412 A KR 1020157031412A KR 20157031412 A KR20157031412 A KR 20157031412A KR 102234175 B1 KR102234175 B1 KR 102234175B1
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KR20160061910A (ko
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리차드 에이. 블랑차드
윌리암 씨. 알렉산더
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아이디얼 파워 인크.
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    • H01L29/0619—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H01L29/0804—
    • H01L29/0817—
    • H01L29/0821—
    • H01L29/732—
    • H01L29/7375—
    • H01L29/7393—
    • H01L29/7395—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M11/00—Power conversion systems not covered by the preceding groups
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1582—Buck-boost converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/66—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal
    • H02M7/68—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters
    • H02M7/72—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/79—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/797—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/861—Vertical heterojunction BJTs having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
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    • H10D62/113—Isolations within a component, i.e. internal isolations
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
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    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
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    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Ac-Ac Conversion (AREA)
KR1020157031412A 2013-06-24 2014-06-24 양방향 양극성 트랜지스터를 갖는 시스템, 회로, 디바이스 및 방법 Active KR102234175B1 (ko)

Applications Claiming Priority (27)

Application Number Priority Date Filing Date Title
US201361838578P 2013-06-24 2013-06-24
US61/838,578 2013-06-24
US201361841624P 2013-07-01 2013-07-01
US61/841,624 2013-07-01
US201361914491P 2013-12-11 2013-12-11
US201361914538P 2013-12-11 2013-12-11
US61/914,491 2013-12-11
US61/914,538 2013-12-11
US201461924884P 2014-01-08 2014-01-08
US61/924,884 2014-01-08
US201461925311P 2014-01-09 2014-01-09
US61/925,311 2014-01-09
US201461928133P 2014-01-16 2014-01-16
US61/928,133 2014-01-16
US201461928644P 2014-01-17 2014-01-17
US61/928,644 2014-01-17
US201461929731P 2014-01-21 2014-01-21
US201461929874P 2014-01-21 2014-01-21
US61/929,731 2014-01-21
US61/929,874 2014-01-21
US201461933442P 2014-01-30 2014-01-30
US61/933,442 2014-01-30
US201462007004P 2014-06-03 2014-06-03
US62/007,004 2014-06-03
US201462008275P 2014-06-05 2014-06-05
US62/008,275 2014-06-05
PCT/US2014/043962 WO2014210072A1 (en) 2013-06-24 2014-06-24 Systems, circuits, devices, and methods with bidirectional bipolar transistors

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KR20160061910A KR20160061910A (ko) 2016-06-01
KR102234175B1 true KR102234175B1 (ko) 2021-04-01

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US (16) US9029909B2 (enExample)
EP (2) EP3116028B1 (enExample)
JP (1) JP6491201B2 (enExample)
KR (1) KR102234175B1 (enExample)
CN (1) CN104919595B (enExample)
AU (1) AU2014302625B2 (enExample)
CA (1) CA2927763C (enExample)
GB (1) GB2522362B (enExample)
WO (1) WO2014210072A1 (enExample)

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US11101372B2 (en) 2013-02-07 2021-08-24 John Wood Double-sided vertical power transistor structure
US9685502B2 (en) * 2013-02-07 2017-06-20 John Wood Bipolar junction transistor structure
US10049884B2 (en) 2013-02-07 2018-08-14 John Wood Anodic etching of substrates
US10374070B2 (en) 2013-02-07 2019-08-06 John Wood Bidirectional bipolar-mode JFET driver circuitry
US9742385B2 (en) * 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9799731B2 (en) * 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9900002B2 (en) * 2013-06-24 2018-02-20 Ideal Power, Inc. Methods of operating a double-base-contact bidirectional bipolar junction transistor
KR20150014641A (ko) * 2013-07-30 2015-02-09 서울반도체 주식회사 질화갈륨계 다이오드 및 그 제조 방법
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
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