KR102228608B1 - 조정가능한 분리 벽에 의한 가스 분리 - Google Patents

조정가능한 분리 벽에 의한 가스 분리 Download PDF

Info

Publication number
KR102228608B1
KR102228608B1 KR1020157023458A KR20157023458A KR102228608B1 KR 102228608 B1 KR102228608 B1 KR 102228608B1 KR 1020157023458 A KR1020157023458 A KR 1020157023458A KR 20157023458 A KR20157023458 A KR 20157023458A KR 102228608 B1 KR102228608 B1 KR 102228608B1
Authority
KR
South Korea
Prior art keywords
substrate
gas separation
disk
gas
separation unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157023458A
Other languages
English (en)
Korean (ko)
Other versions
KR20150114528A (ko
Inventor
한스-게오르크 로츠
네일 모리슨
요제 마누엘 디귀즈-캄포
하이케 란트그라프
토비아스 슈톨리
슈테판 하인
플로리안 리이즈
볼프강 부쉬베크
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150114528A publication Critical patent/KR20150114528A/ko
Application granted granted Critical
Publication of KR102228608B1 publication Critical patent/KR102228608B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020157023458A 2013-01-31 2014-01-22 조정가능한 분리 벽에 의한 가스 분리 Active KR102228608B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13153501.5A EP2762608B1 (en) 2013-01-31 2013-01-31 Gas separation by adjustable separation wall
EP13153501.5 2013-01-31
PCT/EP2014/051261 WO2014118063A1 (en) 2013-01-31 2014-01-22 Gas separation by adjustable separation wall

Publications (2)

Publication Number Publication Date
KR20150114528A KR20150114528A (ko) 2015-10-12
KR102228608B1 true KR102228608B1 (ko) 2021-03-15

Family

ID=47747377

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157023458A Active KR102228608B1 (ko) 2013-01-31 2014-01-22 조정가능한 분리 벽에 의한 가스 분리

Country Status (7)

Country Link
US (2) US20140208565A1 (enExample)
EP (1) EP2762608B1 (enExample)
JP (2) JP7068766B2 (enExample)
KR (1) KR102228608B1 (enExample)
CN (1) CN104968831B (enExample)
TW (1) TWI655314B (enExample)
WO (1) WO2014118063A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5931091B2 (ja) * 2012-01-16 2016-06-08 株式会社アルバック 成膜装置
EP2762607B1 (en) * 2013-01-31 2018-07-25 Applied Materials, Inc. Deposition source with adjustable electrode
EP2762609B1 (en) * 2013-01-31 2019-04-17 Applied Materials, Inc. Apparatus and method for depositing at least two layers on a substrate
EP2784176B1 (en) 2013-03-28 2018-10-03 Applied Materials, Inc. Deposition platform for flexible substrates
EP3256618B1 (de) * 2015-02-13 2020-01-08 Bühler Alzenau GmbH Verfahren zum betrieb einer inline-beschichtungsanlage und inline-beschichtungsanlage
FR3035122B1 (fr) * 2015-04-20 2017-04-28 Coating Plasma Ind Procede de traitement de surface d'un film en mouvement et installation pour la mise en oeuvre de ce procede
US20180258536A1 (en) * 2015-09-02 2018-09-13 Beneq Oy Apparatus for processing a surface of substrate and method operating the apparatus
US20200165721A1 (en) * 2016-02-12 2020-05-28 Neil Morrison Vacuum processing system and methods therefor
KR102180420B1 (ko) * 2016-02-19 2020-11-18 어플라이드 머티어리얼스, 인코포레이티드 진공 챔버 내의 가스 분리 통로의 가스 분리 품질을 조사하는 방법, 및 진공 프로세싱 장치
EP3532652B1 (fr) 2016-10-27 2022-03-16 Coating Plasma Innovation Installation de traitement de surface d'un substrat en mouvement sous atmosphere controlee, et son procede de dimensionnement
FR3058161B1 (fr) * 2016-10-27 2018-11-16 Coating Plasma Innovation Installation de traitement de surface d'un substrat en mouvement sous atmosphere controlee, et son procede de dimensionnement
US20200318233A1 (en) * 2017-11-28 2020-10-08 Edgar Haberkorn Deposition apparatus, method of coating a flexible substrate and flexible substrate having a coating
TWI839613B (zh) 2020-06-04 2024-04-21 美商應用材料股份有限公司 用於蒸發源的溫度控制屏蔽、用於在基板上沉積材料的材料沉積設備及方法
JP7651594B2 (ja) * 2020-06-04 2025-03-26 アプライド マテリアルズ インコーポレイテッド 気相堆積装置及び真空チャンバ内で基板をコーティングするための方法
US20220033958A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Evaporation source, vapor deposition apparatus, and method for coating a substrate in a vacuum chamber
US11552283B2 (en) 2020-08-04 2023-01-10 Applied Materials, Inc. Method of coating a flexible substrate in a R2R deposition system, and vapor deposition system
WO2022040075A1 (en) * 2020-08-21 2022-02-24 Applied Materials, Inc. Processing system for processing a flexible substrate and method of measuring at least one of a property of a flexible substrate and a property of one or more coatings on the flexible substrate
CN114192602B (zh) * 2021-12-14 2022-09-13 大连理工大学 一种高性能多元NiAl基合金管件迭覆级进成形方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023907A (ja) 1999-07-07 2001-01-26 Mitsubishi Heavy Ind Ltd 成膜装置
JP2006032795A (ja) 2004-07-20 2006-02-02 Mitsubishi Heavy Ind Ltd 給電装置およびこれを備えたプラズマ処理装置並びにプラズマ処理方法
JP2006344758A (ja) * 2005-06-08 2006-12-21 Sharp Corp 気相成長装置およびそれを用いた半導体装置の製造方法
JP2008031521A (ja) 2006-07-28 2008-02-14 Sony Corp ロールツーロール型のプラズマ真空処理装置
US20110033638A1 (en) 2009-08-10 2011-02-10 Applied Materials, Inc. Method and apparatus for deposition on large area substrates having reduced gas usage
JP2011042848A (ja) * 2009-08-24 2011-03-03 Fujifilm Corp 成膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0122092A3 (en) * 1983-04-06 1985-07-10 General Engineering Radcliffe Limited Vacuum coating apparatus
GB8309324D0 (en) * 1983-04-06 1983-05-11 Gen Eng Radcliffe Vacuum coating apparatus
GB8408023D0 (en) * 1984-03-28 1984-05-10 Gen Eng Radcliffe Ltd Vacuum coating apparatus
JP2932602B2 (ja) * 1990-04-27 1999-08-09 松下電器産業株式会社 薄膜製造装置
DE4039930A1 (de) * 1990-12-14 1992-06-17 Leybold Ag Vorrichtung fuer plasmabehandlung
EP2180768A1 (en) * 2008-10-23 2010-04-28 TNO Nederlandse Organisatie voor Toegepast Wetenschappelijk Onderzoek Apparatus and method for treating an object
KR20110060953A (ko) * 2008-11-05 2011-06-08 가부시키가이샤 아루박 권취식 진공 처리 장치
WO2011006018A2 (en) * 2009-07-08 2011-01-13 Plasmasi, Inc. Apparatus and method for plasma processing
JP5542488B2 (ja) * 2010-03-18 2014-07-09 富士フイルム株式会社 成膜装置
EP2762607B1 (en) * 2013-01-31 2018-07-25 Applied Materials, Inc. Deposition source with adjustable electrode
EP2762609B1 (en) * 2013-01-31 2019-04-17 Applied Materials, Inc. Apparatus and method for depositing at least two layers on a substrate
EP2784176B1 (en) * 2013-03-28 2018-10-03 Applied Materials, Inc. Deposition platform for flexible substrates

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023907A (ja) 1999-07-07 2001-01-26 Mitsubishi Heavy Ind Ltd 成膜装置
JP2006032795A (ja) 2004-07-20 2006-02-02 Mitsubishi Heavy Ind Ltd 給電装置およびこれを備えたプラズマ処理装置並びにプラズマ処理方法
JP2006344758A (ja) * 2005-06-08 2006-12-21 Sharp Corp 気相成長装置およびそれを用いた半導体装置の製造方法
JP2008031521A (ja) 2006-07-28 2008-02-14 Sony Corp ロールツーロール型のプラズマ真空処理装置
US20110033638A1 (en) 2009-08-10 2011-02-10 Applied Materials, Inc. Method and apparatus for deposition on large area substrates having reduced gas usage
JP2011042848A (ja) * 2009-08-24 2011-03-03 Fujifilm Corp 成膜装置

Also Published As

Publication number Publication date
WO2014118063A1 (en) 2014-08-07
US20190112706A1 (en) 2019-04-18
TWI655314B (zh) 2019-04-01
CN104968831B (zh) 2019-08-02
KR20150114528A (ko) 2015-10-12
CN104968831A (zh) 2015-10-07
JP7068766B2 (ja) 2022-05-17
EP2762608A1 (en) 2014-08-06
US20140208565A1 (en) 2014-07-31
JP2020125544A (ja) 2020-08-20
JP2016514197A (ja) 2016-05-19
TW201445005A (zh) 2014-12-01
EP2762608B1 (en) 2019-10-02

Similar Documents

Publication Publication Date Title
KR102228608B1 (ko) 조정가능한 분리 벽에 의한 가스 분리
KR102033673B1 (ko) 조정가능한 전극을 갖는 증착 소스
KR102032542B1 (ko) 가요성 기판들을 위한 증착 플랫폼 및 그 작동 방법
KR102219696B1 (ko) 공통 증착 플랫폼, 프로세싱 스테이션, 및 그 동작 방법
JP2016514197A5 (enExample)
JP2016514198A5 (enExample)

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20150828

Patent event code: PA01051R01D

Comment text: International Patent Application

AMND Amendment
PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190102

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200513

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20201021

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20200513

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

X091 Application refused [patent]
AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20201021

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20200713

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20150901

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20210104

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20201221

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20201021

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20200713

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20150901

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210310

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210310

End annual number: 3

Start annual number: 1

PG1601 Publication of registration