KR102212759B1 - 다중 헤테로접합 나노입자, 이의 제조 방법 및 이를 포함하는 물품 - Google Patents

다중 헤테로접합 나노입자, 이의 제조 방법 및 이를 포함하는 물품 Download PDF

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KR102212759B1
KR102212759B1 KR1020140031059A KR20140031059A KR102212759B1 KR 102212759 B1 KR102212759 B1 KR 102212759B1 KR 1020140031059 A KR1020140031059 A KR 1020140031059A KR 20140031059 A KR20140031059 A KR 20140031059A KR 102212759 B1 KR102212759 B1 KR 102212759B1
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nanoparticles
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KR20140113588A (ko
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문섭 심
누리 오
유 자이
수지 남
피터 트레포나스
키쇼리 데쉬판데
제이크 주
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더 유니버시티 오브 일리노이즈, 더 오피스 오브 테크놀로지 매니지먼트
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
다우 글로벌 테크놀로지스 엘엘씨
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KR1020140031059A 2013-03-15 2014-03-17 다중 헤테로접합 나노입자, 이의 제조 방법 및 이를 포함하는 물품 Expired - Fee Related KR102212759B1 (ko)

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JP6553735B2 (ja) 2015-03-13 2019-07-31 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の方法及び素子
CN114538369A (zh) * 2015-12-31 2022-05-27 陶氏环球技术有限责任公司 纳米结构材料的连续流动合成
EP3188260B1 (en) 2015-12-31 2020-02-12 Dow Global Technologies Llc Nanostructure material structures and methods
TWI744296B (zh) * 2016-03-24 2021-11-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
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US10544042B2 (en) * 2017-01-17 2020-01-28 International Business Machines Corporation Nanoparticle structure and process for manufacture
WO2018193445A1 (en) 2017-04-19 2018-10-25 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Semiconductor nanostructures and applications
CN110544746B (zh) * 2018-05-29 2021-03-16 Tcl科技集团股份有限公司 发光二极管及其制备方法
JP7072169B2 (ja) * 2018-06-22 2022-05-20 スタンレー電気株式会社 ナノ粒子集合体とその製造方法
US12209214B2 (en) * 2019-06-24 2025-01-28 Sharp Kabushiki Kaisha Light-emitting element having a hole transport layer containing LaNiO.sub.3 for luminous efficiency
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JP6487625B2 (ja) 2019-03-20
US20140264258A1 (en) 2014-09-18
US10510924B2 (en) 2019-12-17
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EP2778122A1 (en) 2014-09-17
CN104046360A (zh) 2014-09-17
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