KR102102754B1 - 임프린트 장치, 임프린트 방법 및 물품의 제조 방법 - Google Patents

임프린트 장치, 임프린트 방법 및 물품의 제조 방법 Download PDF

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KR102102754B1
KR102102754B1 KR1020187018568A KR20187018568A KR102102754B1 KR 102102754 B1 KR102102754 B1 KR 102102754B1 KR 1020187018568 A KR1020187018568 A KR 1020187018568A KR 20187018568 A KR20187018568 A KR 20187018568A KR 102102754 B1 KR102102754 B1 KR 102102754B1
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South Korea
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substrate
imprint material
discharge port
imprint
supply
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KR20180087399A (ko
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료스케 츠츠미
에이지 사카모토
히사시 남바
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020187018568A 2015-11-30 2016-11-22 임프린트 장치, 임프린트 방법 및 물품의 제조 방법 Active KR102102754B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015234318A JP6590667B2 (ja) 2015-11-30 2015-11-30 インプリント装置、インプリント方法、および物品の製造方法
JPJP-P-2015-234318 2015-11-30
PCT/JP2016/084601 WO2017094563A1 (ja) 2015-11-30 2016-11-22 インプリント装置、インプリント方法、および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20180087399A KR20180087399A (ko) 2018-08-01
KR102102754B1 true KR102102754B1 (ko) 2020-04-21

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JP (1) JP6590667B2 (enExample)
KR (1) KR102102754B1 (enExample)
TW (1) TWI647089B (enExample)
WO (1) WO2017094563A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7015134B2 (ja) * 2017-10-12 2022-02-02 キヤノン株式会社 インプリント装置、インプリント方法、情報処理装置、生成方法、プログラム及び物品の製造方法
JP6988767B2 (ja) 2018-11-07 2022-01-05 オムロン株式会社 塗布装置
JP7257817B2 (ja) 2019-03-04 2023-04-14 キヤノン株式会社 インプリント装置、および物品の製造方法
JP7263088B2 (ja) * 2019-04-08 2023-04-24 キヤノン株式会社 インプリント装置、インプリント方法および物品の製造方法
JP7610463B2 (ja) * 2021-04-20 2025-01-08 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
JP7699993B2 (ja) * 2021-07-30 2025-06-30 キヤノン株式会社 液体吐出装置、液体吐出方法、成形装置及び物品の製造方法
JP2024078506A (ja) * 2022-11-30 2024-06-11 キヤノン株式会社 インプリント装置、物品製造方法、決定方法及びプログラム
CN120178595B (zh) * 2025-05-20 2025-07-22 普雨科技(苏州)有限公司 一种步进式重复纳米压印设备、控制方法及控制系统

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JP2003053957A (ja) * 2001-08-20 2003-02-26 Konica Corp インクジェット記録装置
JP2007296783A (ja) 2006-05-01 2007-11-15 Canon Inc 加工装置及び方法、並びに、デバイス製造方法
JP4541560B2 (ja) * 1999-02-08 2010-09-08 キヤノン株式会社 電子デバイス、電子源及び画像形成装置の製造方法
JP2011128396A (ja) 2009-12-18 2011-06-30 Dainippon Printing Co Ltd 成形用スタンパー、反射防止フィルムの製造方法及び反射防止フィルム
JP2012069758A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 滴下制御方法および滴下制御装置
JP2012190877A (ja) 2011-03-09 2012-10-04 Fujifilm Corp ナノインプリント方法およびそれに用いられるナノインプリント装置
JP2013065624A (ja) 2011-09-15 2013-04-11 Fujifilm Corp インクジェットヘッドの吐出量補正方法、吐出量補正装置、及び機能性インク配置装置並びにナノインプリントシステム

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JPH06163499A (ja) * 1992-11-19 1994-06-10 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH0943424A (ja) * 1995-08-01 1997-02-14 Canon Inc カラーフィルタの製造方法及び製造装置
JP4819577B2 (ja) * 2006-05-31 2011-11-24 キヤノン株式会社 パターン転写方法およびパターン転写装置
JP5361309B2 (ja) * 2008-09-25 2013-12-04 キヤノン株式会社 インプリント装置およびインプリント方法
US20100102471A1 (en) * 2008-10-24 2010-04-29 Molecular Imprints, Inc. Fluid transport and dispensing
JP2011062590A (ja) * 2009-09-15 2011-03-31 Seiko Epson Corp 吐出方法及び液滴吐出装置
JP5563319B2 (ja) * 2010-01-19 2014-07-30 キヤノン株式会社 インプリント装置、および物品の製造方法
JP5335717B2 (ja) * 2010-03-16 2013-11-06 富士フイルム株式会社 レジスト組成物配置装置及びパターン形成体の製造方法
JP5214683B2 (ja) * 2010-08-31 2013-06-19 株式会社東芝 インプリントレシピ作成装置及び方法並びにインプリント装置及び方法
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JP6083203B2 (ja) * 2012-11-19 2017-02-22 大日本印刷株式会社 インプリント樹脂滴下位置決定方法、インプリント方法及び半導体装置製造方法

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Publication number Priority date Publication date Assignee Title
JP4541560B2 (ja) * 1999-02-08 2010-09-08 キヤノン株式会社 電子デバイス、電子源及び画像形成装置の製造方法
JP2003053957A (ja) * 2001-08-20 2003-02-26 Konica Corp インクジェット記録装置
JP2007296783A (ja) 2006-05-01 2007-11-15 Canon Inc 加工装置及び方法、並びに、デバイス製造方法
JP2011128396A (ja) 2009-12-18 2011-06-30 Dainippon Printing Co Ltd 成形用スタンパー、反射防止フィルムの製造方法及び反射防止フィルム
JP2012069758A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 滴下制御方法および滴下制御装置
JP2012190877A (ja) 2011-03-09 2012-10-04 Fujifilm Corp ナノインプリント方法およびそれに用いられるナノインプリント装置
JP2013065624A (ja) 2011-09-15 2013-04-11 Fujifilm Corp インクジェットヘッドの吐出量補正方法、吐出量補正装置、及び機能性インク配置装置並びにナノインプリントシステム

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JP6590667B2 (ja) 2019-10-16
TWI647089B (zh) 2019-01-11
JP2017103313A (ja) 2017-06-08
KR20180087399A (ko) 2018-08-01
TW201733773A (zh) 2017-10-01
WO2017094563A1 (ja) 2017-06-08

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