KR102095811B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR102095811B1
KR102095811B1 KR1020180053172A KR20180053172A KR102095811B1 KR 102095811 B1 KR102095811 B1 KR 102095811B1 KR 1020180053172 A KR1020180053172 A KR 1020180053172A KR 20180053172 A KR20180053172 A KR 20180053172A KR 102095811 B1 KR102095811 B1 KR 102095811B1
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KR
South Korea
Prior art keywords
oxide
layer
oxide layer
semiconductor device
zto
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KR1020180053172A
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English (en)
Korean (ko)
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KR20190015985A (ko
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히로유키 우치야마
츠바사 모리츠카
스미코 후지사키
Original Assignee
히타치 긴조쿠 가부시키가이샤
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Publication of KR20190015985A publication Critical patent/KR20190015985A/ko
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Publication of KR102095811B1 publication Critical patent/KR102095811B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020180053172A 2017-08-07 2018-05-09 반도체 장치의 제조 방법 KR102095811B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017152200A JP6841184B2 (ja) 2017-08-07 2017-08-07 半導体装置の製造方法
JPJP-P-2017-152200 2017-08-07

Publications (2)

Publication Number Publication Date
KR20190015985A KR20190015985A (ko) 2019-02-15
KR102095811B1 true KR102095811B1 (ko) 2020-04-02

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ID=65367323

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KR1020180053172A KR102095811B1 (ko) 2017-08-07 2018-05-09 반도체 장치의 제조 방법

Country Status (3)

Country Link
JP (1) JP6841184B2 (zh)
KR (1) KR102095811B1 (zh)
CN (1) CN109390236B (zh)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5238383A (en) 1975-09-19 1977-03-24 Q P Corp Method and apparatus for detedting eggs invaded by bacteria
JP5053537B2 (ja) 2004-11-10 2012-10-17 キヤノン株式会社 非晶質酸化物を利用した半導体デバイス
JP5244331B2 (ja) 2007-03-26 2013-07-24 出光興産株式会社 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
GB2471093A (en) * 2009-06-17 2010-12-22 Cilian Ag Viral protein expression in ciliates
KR101652790B1 (ko) * 2009-11-09 2016-08-31 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
JP5503667B2 (ja) * 2009-11-27 2014-05-28 株式会社日立製作所 電界効果トランジスタおよび電界効果トランジスタの製造方法
KR20110125105A (ko) * 2010-05-12 2011-11-18 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
JP5540972B2 (ja) 2010-07-30 2014-07-02 日立金属株式会社 酸化物半導体ターゲットおよび酸化物半導体膜の製造方法
JP2012235104A (ja) * 2011-04-22 2012-11-29 Kobe Steel Ltd 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
JPWO2013108327A1 (ja) * 2012-01-20 2015-05-11 パナソニック株式会社 薄膜トランジスタ
KR20130111874A (ko) * 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법
JP6082911B2 (ja) * 2012-06-08 2017-02-22 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP5983163B2 (ja) * 2012-08-07 2016-08-31 日立金属株式会社 酸化物半導体ターゲットおよび酸化物半導体材料、並びにそれらを用いた半導体装置の製造方法
KR101417932B1 (ko) * 2012-12-13 2014-07-10 성균관대학교산학협력단 이중층 구조의 반도체 채널을 구비하는 박막트랜지스터 및 이의 제조방법
WO2016092427A1 (en) * 2014-12-10 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
JP2019033143A (ja) 2019-02-28
JP6841184B2 (ja) 2021-03-10
KR20190015985A (ko) 2019-02-15
CN109390236A (zh) 2019-02-26
CN109390236B (zh) 2021-12-14

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