KR102043916B1 - 반도체 제조 장치용 부재 및 그 제조 방법 - Google Patents

반도체 제조 장치용 부재 및 그 제조 방법 Download PDF

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Publication number
KR102043916B1
KR102043916B1 KR1020130126967A KR20130126967A KR102043916B1 KR 102043916 B1 KR102043916 B1 KR 102043916B1 KR 1020130126967 A KR1020130126967 A KR 1020130126967A KR 20130126967 A KR20130126967 A KR 20130126967A KR 102043916 B1 KR102043916 B1 KR 102043916B1
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South Korea
Prior art keywords
inner tube
flange
tube
plate
semiconductor manufacturing
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KR1020130126967A
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Korean (ko)
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KR20140053784A (ko
Inventor
유타카 운노
데츠히사 아베
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엔지케이 인슐레이터 엘티디
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Ceramic Products (AREA)
KR1020130126967A 2012-10-26 2013-10-24 반도체 제조 장치용 부재 및 그 제조 방법 Active KR102043916B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261718758P 2012-10-26 2012-10-26
US61/718,758 2012-10-26

Publications (2)

Publication Number Publication Date
KR20140053784A KR20140053784A (ko) 2014-05-08
KR102043916B1 true KR102043916B1 (ko) 2019-11-13

Family

ID=50546099

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130126967A Active KR102043916B1 (ko) 2012-10-26 2013-10-24 반도체 제조 장치용 부재 및 그 제조 방법

Country Status (3)

Country Link
US (1) US9548226B2 (https=)
JP (1) JP6078450B2 (https=)
KR (1) KR102043916B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170326498A1 (en) * 2016-05-11 2017-11-16 General Electric Company Sulfite Preconditioning Systems And Methods To Reduce Mercury Concentrations In Waste Water
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
JP6873178B2 (ja) * 2019-03-26 2021-05-19 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060186109A1 (en) * 2005-02-23 2006-08-24 Ngk Insulators, Ltd. Heating systems
JP2006289527A (ja) * 2005-04-06 2006-10-26 Ohashi Technica Inc 圧入接合方法及び圧入接合部品
US20070221648A1 (en) * 2006-03-24 2007-09-27 Ngk Insulators, Ltd. Heating device
US20120018416A1 (en) * 2010-07-26 2012-01-26 Ngk Insulators, Ltd. Ceramic heater

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2783980B2 (ja) 1994-09-01 1998-08-06 日本碍子株式会社 接合体およびその製造方法
JP3316167B2 (ja) 1996-10-08 2002-08-19 日本碍子株式会社 窒化アルミニウム質基材の接合体の製造方法およびこれに使用する接合助剤
JP4070752B2 (ja) 1997-01-30 2008-04-02 日本碍子株式会社 窒化アルミニウム質セラミックス基材の接合剤
JP3604888B2 (ja) 1997-01-30 2004-12-22 日本碍子株式会社 窒化アルミニウム質セラミックス基材の接合体、窒化アルミニウム質セラミックス基材の接合体の製造方法及び接合剤
JP3582330B2 (ja) * 1997-11-14 2004-10-27 東京エレクトロン株式会社 処理装置及びこれを用いた処理システム
JP4028534B2 (ja) * 1999-05-13 2007-12-26 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP2001196318A (ja) * 1999-12-17 2001-07-19 Texas Instr Inc <Ti> 半導体処理方法および装置
JP4282221B2 (ja) 2000-12-14 2009-06-17 日本碍子株式会社 サセプターのチャンバーへの取付構造およびサセプターのチャンバーへの支持部材
NL1018086C2 (nl) * 2001-05-16 2002-11-26 Asm Int Werkwijze en inrichting voor het thermisch behandelen van substraten.
US6730175B2 (en) * 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6875927B2 (en) * 2002-03-08 2005-04-05 Applied Materials, Inc. High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications
JP3520074B2 (ja) * 2002-03-28 2004-04-19 日本碍子株式会社 セラミックサセプターの取付構造、セラミックサセプターの支持構造およびセラミックサセプターの支持部材
TW200633947A (en) * 2005-02-16 2006-10-01 Ngk Insulators Ltd Joined body and manufacturing method for the same
JP2006339144A (ja) * 2005-05-31 2006-12-14 Ngk Insulators Ltd プラズマ処理装置
JP5347214B2 (ja) 2006-06-12 2013-11-20 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP5202175B2 (ja) * 2008-08-07 2013-06-05 日本碍子株式会社 シャフト付きヒータ
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
JP5463224B2 (ja) * 2010-07-09 2014-04-09 日本発條株式会社 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート
CN106884157B (zh) * 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
JP5702657B2 (ja) * 2011-04-18 2015-04-15 東京エレクトロン株式会社 熱処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060186109A1 (en) * 2005-02-23 2006-08-24 Ngk Insulators, Ltd. Heating systems
JP2006289527A (ja) * 2005-04-06 2006-10-26 Ohashi Technica Inc 圧入接合方法及び圧入接合部品
US20070221648A1 (en) * 2006-03-24 2007-09-27 Ngk Insulators, Ltd. Heating device
US20120018416A1 (en) * 2010-07-26 2012-01-26 Ngk Insulators, Ltd. Ceramic heater

Also Published As

Publication number Publication date
JP6078450B2 (ja) 2017-02-08
US9548226B2 (en) 2017-01-17
US20140117119A1 (en) 2014-05-01
KR20140053784A (ko) 2014-05-08
JP2014086726A (ja) 2014-05-12

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