JP6078450B2 - 半導体製造装置用部材及びその製法 - Google Patents

半導体製造装置用部材及びその製法 Download PDF

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Publication number
JP6078450B2
JP6078450B2 JP2013215951A JP2013215951A JP6078450B2 JP 6078450 B2 JP6078450 B2 JP 6078450B2 JP 2013215951 A JP2013215951 A JP 2013215951A JP 2013215951 A JP2013215951 A JP 2013215951A JP 6078450 B2 JP6078450 B2 JP 6078450B2
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Japan
Prior art keywords
dispersion plate
tube
gas dispersion
pipe
flange
Prior art date
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JP2013215951A
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English (en)
Japanese (ja)
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JP2014086726A5 (https=
JP2014086726A (ja
Inventor
海野　豊
豊 海野
哲久 阿部
哲久 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
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NGK Insulators Ltd
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Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JP2014086726A publication Critical patent/JP2014086726A/ja
Publication of JP2014086726A5 publication Critical patent/JP2014086726A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Ceramic Products (AREA)
JP2013215951A 2012-10-26 2013-10-17 半導体製造装置用部材及びその製法 Active JP6078450B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261718758P 2012-10-26 2012-10-26
US61/718,758 2012-10-26

Publications (3)

Publication Number Publication Date
JP2014086726A JP2014086726A (ja) 2014-05-12
JP2014086726A5 JP2014086726A5 (https=) 2015-12-03
JP6078450B2 true JP6078450B2 (ja) 2017-02-08

Family

ID=50546099

Family Applications (1)

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JP2013215951A Active JP6078450B2 (ja) 2012-10-26 2013-10-17 半導体製造装置用部材及びその製法

Country Status (3)

Country Link
US (1) US9548226B2 (https=)
JP (1) JP6078450B2 (https=)
KR (1) KR102043916B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170326498A1 (en) * 2016-05-11 2017-11-16 General Electric Company Sulfite Preconditioning Systems And Methods To Reduce Mercury Concentrations In Waste Water
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
JP6873178B2 (ja) * 2019-03-26 2021-05-19 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2783980B2 (ja) 1994-09-01 1998-08-06 日本碍子株式会社 接合体およびその製造方法
JP3316167B2 (ja) 1996-10-08 2002-08-19 日本碍子株式会社 窒化アルミニウム質基材の接合体の製造方法およびこれに使用する接合助剤
JP4070752B2 (ja) 1997-01-30 2008-04-02 日本碍子株式会社 窒化アルミニウム質セラミックス基材の接合剤
JP3604888B2 (ja) 1997-01-30 2004-12-22 日本碍子株式会社 窒化アルミニウム質セラミックス基材の接合体、窒化アルミニウム質セラミックス基材の接合体の製造方法及び接合剤
JP3582330B2 (ja) * 1997-11-14 2004-10-27 東京エレクトロン株式会社 処理装置及びこれを用いた処理システム
JP4028534B2 (ja) * 1999-05-13 2007-12-26 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP2001196318A (ja) * 1999-12-17 2001-07-19 Texas Instr Inc <Ti> 半導体処理方法および装置
JP4282221B2 (ja) 2000-12-14 2009-06-17 日本碍子株式会社 サセプターのチャンバーへの取付構造およびサセプターのチャンバーへの支持部材
NL1018086C2 (nl) * 2001-05-16 2002-11-26 Asm Int Werkwijze en inrichting voor het thermisch behandelen van substraten.
US6730175B2 (en) * 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6875927B2 (en) * 2002-03-08 2005-04-05 Applied Materials, Inc. High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications
JP3520074B2 (ja) * 2002-03-28 2004-04-19 日本碍子株式会社 セラミックサセプターの取付構造、セラミックサセプターの支持構造およびセラミックサセプターの支持部材
TW200633947A (en) * 2005-02-16 2006-10-01 Ngk Insulators Ltd Joined body and manufacturing method for the same
US7126093B2 (en) * 2005-02-23 2006-10-24 Ngk Insulators, Ltd. Heating systems
JP4694873B2 (ja) * 2005-04-06 2011-06-08 株式会社オーハシテクニカ 圧入接合方法及び圧入接合部品
JP2006339144A (ja) * 2005-05-31 2006-12-14 Ngk Insulators Ltd プラズマ処理装置
JP2007258115A (ja) * 2006-03-24 2007-10-04 Ngk Insulators Ltd 加熱装置
JP5347214B2 (ja) 2006-06-12 2013-11-20 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP5202175B2 (ja) * 2008-08-07 2013-06-05 日本碍子株式会社 シャフト付きヒータ
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
JP5463224B2 (ja) * 2010-07-09 2014-04-09 日本発條株式会社 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート
JP5791412B2 (ja) * 2010-07-26 2015-10-07 日本碍子株式会社 セラミックヒーター
CN106884157B (zh) * 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
JP5702657B2 (ja) * 2011-04-18 2015-04-15 東京エレクトロン株式会社 熱処理装置

Also Published As

Publication number Publication date
US9548226B2 (en) 2017-01-17
KR102043916B1 (ko) 2019-11-13
US20140117119A1 (en) 2014-05-01
KR20140053784A (ko) 2014-05-08
JP2014086726A (ja) 2014-05-12

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