KR102019522B1 - Pzt계 강유전체 박막 형성용 조성물 및 그 제조 방법 그리고 그 조성물을 사용한 pzt계 강유전체 박막의 형성 방법 - Google Patents

Pzt계 강유전체 박막 형성용 조성물 및 그 제조 방법 그리고 그 조성물을 사용한 pzt계 강유전체 박막의 형성 방법 Download PDF

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KR102019522B1
KR102019522B1 KR1020140018261A KR20140018261A KR102019522B1 KR 102019522 B1 KR102019522 B1 KR 102019522B1 KR 1020140018261 A KR1020140018261 A KR 1020140018261A KR 20140018261 A KR20140018261 A KR 20140018261A KR 102019522 B1 KR102019522 B1 KR 102019522B1
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pzt
thin film
composition
mass
ferroelectric thin
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KR20140116794A (ko
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도시히로 도이
히데아키 사쿠라이
노부유키 소야마
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미쓰비시 마테리알 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Inorganic Insulating Materials (AREA)
KR1020140018261A 2013-03-25 2014-02-18 Pzt계 강유전체 박막 형성용 조성물 및 그 제조 방법 그리고 그 조성물을 사용한 pzt계 강유전체 박막의 형성 방법 Active KR102019522B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013061938A JP6075145B2 (ja) 2013-03-25 2013-03-25 Ｐｚｔ系強誘電体薄膜形成用組成物の製造方法並びに該組成物を用いたｐｚｔ系強誘電体薄膜の形成方法
JPJP-P-2013-061938 2013-03-25

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KR20140116794A KR20140116794A (ko) 2014-10-06
KR102019522B1 true KR102019522B1 (ko) 2019-09-06

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US (1) US20140287251A1 (cg-RX-API-DMAC7.html)
EP (1) EP2784137B1 (cg-RX-API-DMAC7.html)
JP (1) JP6075145B2 (cg-RX-API-DMAC7.html)
KR (1) KR102019522B1 (cg-RX-API-DMAC7.html)
CN (1) CN104072132B (cg-RX-API-DMAC7.html)
IN (1) IN2014DE00469A (cg-RX-API-DMAC7.html)
TW (1) TWI591205B (cg-RX-API-DMAC7.html)

Families Citing this family (5)

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JP6237398B2 (ja) * 2014-03-27 2017-11-29 三菱マテリアル株式会社 ＣｅドープのＰＺＴ系圧電体膜形成用組成物
EP3125317B1 (en) * 2014-03-27 2022-04-27 Mitsubishi Materials Corporation Mn-doped pzt-based piezoelectric film formation composition and mn-doped pzt-based piezoelectric film
JP6550791B2 (ja) * 2015-02-26 2019-07-31 三菱マテリアル株式会社 ＰＮｂＺＴ膜形成用組成物の製造方法及びＰＮｂＺＴ圧電体膜の形成方法
EP3343654B1 (en) * 2015-08-28 2020-04-15 Japan Advanced Institute of Science and Technology Method for forming pzt ferroelectric film
JP6950404B2 (ja) * 2017-03-15 2021-10-13 三菱マテリアル株式会社 圧電体膜形成用液組成物の製造方法及びこの液組成物を用いて圧電体膜を形成する方法

Citations (1)

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KR100453416B1 (ko) * 1998-04-15 2005-06-13 램트론 인터내쇼날 (주) 강유전성박막및용액:조성물및가공법

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WO1990013149A1 (en) * 1989-04-27 1990-11-01 Queen's University At Kingston SOL GEL PROCESS FOR PREPARING Pb(Zr,Ti)O3 THIN FILMS
US5384294A (en) * 1993-11-30 1995-01-24 The United States Of America As Represented By The Secretary Of The Air Force Sol-gel derived lead oxide containing ceramics
JP5370332B2 (ja) * 1995-09-19 2013-12-18 セイコーエプソン株式会社 圧電体素子およびインクジェット式記録ヘッド
JP4122564B2 (ja) * 1998-04-24 2008-07-23 セイコーエプソン株式会社 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
JP2001261338A (ja) 2000-03-15 2001-09-26 Mitsubishi Materials Corp Ｔｉを含有する金属酸化物薄膜形成用原料溶液、Ｔｉを含有する金属酸化物薄膜の形成方法及びＴｉを含有する金属酸化物薄膜
JP4419332B2 (ja) * 2001-02-06 2010-02-24 三菱マテリアル株式会社 ペロブスカイト型酸化物膜の基板表面構造とその基板およびペロブスカイト型酸化物膜
US7229662B2 (en) * 2003-12-16 2007-06-12 National University Of Singapore Heterolayered ferroelectric thin films and methods of forming same
CN100481550C (zh) * 2004-07-13 2009-04-22 精工爱普生株式会社 用于形成铁电薄膜的组合物、铁电薄膜及其制造方法、液体喷射头
JP4217906B2 (ja) * 2004-09-17 2009-02-04 セイコーエプソン株式会社 前駆体溶液の製造方法
SG124303A1 (en) * 2005-01-18 2006-08-30 Agency Science Tech & Res Thin films of ferroelectric materials and a methodfor preparing same
FR2886309B1 (fr) * 2005-05-31 2007-08-17 Airbus France Sas Sol pour le revetement par voie sol-gel d'une surface et procede de revetement par voie sol-gel le mettant en oeuvre
WO2008058121A2 (en) * 2006-11-06 2008-05-15 Drexel University Sol-gel precursors and methods for making lead-based perovskite films
JP2011014820A (ja) * 2009-07-06 2011-01-20 Seiko Epson Corp 圧電体薄膜、液体噴射ヘッドおよび液体噴射装置の製造方法
KR101138239B1 (ko) * 2010-06-23 2012-04-26 한국산업기술대학교산학협력단 고압전 계수 박막의 제조방법
JP5613910B2 (ja) * 2011-05-17 2014-10-29 三菱マテリアル株式会社 Ｐｚｔ強誘電体薄膜の製造方法

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KR100453416B1 (ko) * 1998-04-15 2005-06-13 램트론 인터내쇼날 (주) 강유전성박막및용액:조성물및가공법

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CN104072132B (zh) 2017-06-23
TW201500580A (zh) 2015-01-01
KR20140116794A (ko) 2014-10-06
EP2784137A1 (en) 2014-10-01
JP2014187266A (ja) 2014-10-02
JP6075145B2 (ja) 2017-02-08
CN104072132A (zh) 2014-10-01
TWI591205B (zh) 2017-07-11
EP2784137B1 (en) 2016-09-21
IN2014DE00469A (cg-RX-API-DMAC7.html) 2015-06-19
US20140287251A1 (en) 2014-09-25

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