KR102018278B1 - 비휘발성 전하 트랩 메모리 디바이스를 제조하기 위한 라디칼 산화 프로세스 - Google Patents

비휘발성 전하 트랩 메모리 디바이스를 제조하기 위한 라디칼 산화 프로세스 Download PDF

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KR102018278B1
KR102018278B1 KR1020147035340A KR20147035340A KR102018278B1 KR 102018278 B1 KR102018278 B1 KR 102018278B1 KR 1020147035340 A KR1020147035340 A KR 1020147035340A KR 20147035340 A KR20147035340 A KR 20147035340A KR 102018278 B1 KR102018278 B1 KR 102018278B1
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layer
charge trap
substrate
oxidation process
dielectric layer
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KR1020147035340A
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Korean (ko)
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KR20150040807A (ko
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크리쉬나스와미 람쿠마르
사기 레비
정수 변
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롱지튜드 플래쉬 메모리 솔루션즈 리미티드
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Priority claimed from US13/539,458 external-priority patent/US8940645B2/en
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    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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KR1020147035340A 2012-07-01 2013-07-01 비휘발성 전하 트랩 메모리 디바이스를 제조하기 위한 라디칼 산화 프로세스 KR102018278B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/539,458 US8940645B2 (en) 2007-05-25 2012-07-01 Radical oxidation process for fabricating a nonvolatile charge trap memory device
US13/539,458 2012-07-01
PCT/US2013/048876 WO2014008161A1 (fr) 2012-07-01 2013-07-01 Traitement d'oxydation des radicaux pour la fabrication d'un dispositif de mémoire non volatile à piégeage de charge

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KR1020197025446A Division KR102146640B1 (ko) 2012-07-01 2013-07-01 비휘발성 전하 트랩 메모리 디바이스를 제조하기 위한 라디칼 산화 프로세스

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KR20150040807A KR20150040807A (ko) 2015-04-15
KR102018278B1 true KR102018278B1 (ko) 2019-09-05

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KR1020197025446A KR102146640B1 (ko) 2012-07-01 2013-07-01 비휘발성 전하 트랩 메모리 디바이스를 제조하기 위한 라디칼 산화 프로세스

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KR (2) KR102018278B1 (fr)
CN (2) CN109755135A (fr)
TW (2) TWI709174B (fr)
WO (1) WO2014008161A1 (fr)

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US10211217B2 (en) * 2017-06-20 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
CN109148468A (zh) * 2018-09-26 2019-01-04 长江存储科技有限责任公司 一种3d nand存储器

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US8283261B2 (en) * 2007-05-25 2012-10-09 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
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KR102146640B1 (ko) 2020-08-21
CN104781916A (zh) 2015-07-15
KR20190108619A (ko) 2019-09-24
CN109755135A (zh) 2019-05-14
TW201737344A (zh) 2017-10-16
KR20150040807A (ko) 2015-04-15
WO2014008161A1 (fr) 2014-01-09
TWI594327B (zh) 2017-08-01
TW201419419A (zh) 2014-05-16

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