KR102013734B1 - 표시 장치 - Google Patents

표시 장치 Download PDF

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Publication number
KR102013734B1
KR102013734B1 KR1020110131673A KR20110131673A KR102013734B1 KR 102013734 B1 KR102013734 B1 KR 102013734B1 KR 1020110131673 A KR1020110131673 A KR 1020110131673A KR 20110131673 A KR20110131673 A KR 20110131673A KR 102013734 B1 KR102013734 B1 KR 102013734B1
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South Korea
Prior art keywords
electrode
line
scan line
thin film
semiconductor film
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Expired - Fee Related
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KR1020110131673A
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English (en)
Korean (ko)
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KR20120069566A (ko
Inventor
아츠시 히로세
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20120069566A publication Critical patent/KR20120069566A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020110131673A 2010-12-20 2011-12-09 표시 장치 Expired - Fee Related KR102013734B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010282635 2010-12-20
JPJP-P-2010-282635 2010-12-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190047804A Division KR102095938B1 (ko) 2010-12-20 2019-04-24 표시 장치

Publications (2)

Publication Number Publication Date
KR20120069566A KR20120069566A (ko) 2012-06-28
KR102013734B1 true KR102013734B1 (ko) 2019-08-23

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KR1020110131673A Expired - Fee Related KR102013734B1 (ko) 2010-12-20 2011-12-09 표시 장치
KR1020190047804A Active KR102095938B1 (ko) 2010-12-20 2019-04-24 표시 장치
KR1020200036137A Active KR102344940B1 (ko) 2010-12-20 2020-03-25 표시 장치
KR1020210187113A Active KR102392410B1 (ko) 2010-12-20 2021-12-24 표시 장치
KR1020220051231A Active KR102465196B1 (ko) 2010-12-20 2022-04-26 표시 장치

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KR1020190047804A Active KR102095938B1 (ko) 2010-12-20 2019-04-24 표시 장치
KR1020200036137A Active KR102344940B1 (ko) 2010-12-20 2020-03-25 표시 장치
KR1020210187113A Active KR102392410B1 (ko) 2010-12-20 2021-12-24 표시 장치
KR1020220051231A Active KR102465196B1 (ko) 2010-12-20 2022-04-26 표시 장치

Country Status (4)

Country Link
US (8) US9568794B2 (enExample)
JP (10) JP5864053B2 (enExample)
KR (5) KR102013734B1 (enExample)
TW (4) TWI608283B (enExample)

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* Cited by examiner, † Cited by third party
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KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10304859B2 (en) * 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US9915848B2 (en) * 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6082912B2 (ja) * 2013-10-03 2017-02-22 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
US9882014B2 (en) * 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9190322B2 (en) * 2014-01-24 2015-11-17 Infineon Technologies Ag Method for producing a copper layer on a semiconductor body using a printing process
JP6283522B2 (ja) * 2014-01-29 2018-02-21 株式会社ジャパンディスプレイ 表示装置及び反射型液晶表示装置
JP2015191232A (ja) 2014-03-31 2015-11-02 ソニー株式会社 液晶表示装置
US20160155803A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
CN113341624A (zh) * 2015-02-12 2021-09-03 株式会社半导体能源研究所 显示装置
CN110164880B (zh) * 2015-06-09 2022-05-10 群创光电股份有限公司 显示装置
JP6542610B2 (ja) * 2015-08-20 2019-07-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6844845B2 (ja) * 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN109585491B (zh) * 2017-09-29 2020-11-03 曜凌光电股份有限公司 窄边框的有机发光二极管显示器
JP6999367B2 (ja) * 2017-11-01 2022-01-18 株式会社ジャパンディスプレイ 基板及び電気泳動装置
CN110034131B (zh) * 2019-04-17 2022-01-14 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板和显示装置
US10964811B2 (en) * 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
EP4010930A4 (en) 2019-08-09 2023-03-01 Micron Technology, Inc. Transistor and methods of forming transistors
CN114067709B (zh) * 2020-07-31 2023-11-28 深超光电（深圳）有限公司 导电性测试结构、薄膜晶体管阵列基板及显示面板
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors
JP7612471B2 (ja) 2021-03-22 2025-01-14 株式会社Ｎｔｔドコモ 端末、基地局、および通信方法
KR102684960B1 (ko) * 2022-02-17 2024-07-15 와이엠씨 주식회사 힐록 발생이 억제되는 디스플레이 패널의 제조방법
KR20230126014A (ko) 2022-02-22 2023-08-29 (주)메디전자 허벅지 운동 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007164172A (ja) * 2005-12-14 2007-06-28 Au Optronics Corp 液晶ディスプレイ、及び液晶ディスプレイの製造方法
WO2008096483A1 (ja) * 2007-02-09 2008-08-14 Sharp Kabushiki Kaisha アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPH0646347B2 (ja) 1985-04-19 1994-06-15 松下電器産業株式会社 アクテイブマトリクス基板
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
GB2212659A (en) * 1987-11-20 1989-07-26 Philips Electronic Associated Multi-level circuit cross-overs
JPH04204632A (ja) 1990-11-30 1992-07-27 Toshiba Corp 液晶表示装置
JPH05341322A (ja) 1992-06-12 1993-12-24 Hitachi Ltd 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
JPH11288006A (ja) 1998-04-06 1999-10-19 Hitachi Ltd 液晶表示装置
JP3796072B2 (ja) 1999-08-04 2006-07-12 シャープ株式会社 透過型液晶表示装置
TW514762B (en) * 2000-03-06 2002-12-21 Hitachi Ltd Liquid crystal display element having controlled storage capacitance
US6507383B1 (en) * 2000-03-21 2003-01-14 Hitachi, Ltd. In-plane switching liquid crystal display apparatus with reduced capacitance between pixel electrodes and common electrodes
JP3918496B2 (ja) * 2001-10-22 2007-05-23 株式会社日立製作所 液晶表示装置及びその製造方法
CN1297012C (zh) * 2002-02-06 2007-01-24 株式会社东芝 平面检测型固体摄像装置
JP4004835B2 (ja) 2002-04-02 2007-11-07 株式会社アドバンスト・ディスプレイ 薄膜トランジスタアレイ基板の製造方法
JP4248306B2 (ja) * 2002-06-17 2009-04-02 シャープ株式会社 液晶表示装置
KR100913303B1 (ko) 2003-05-06 2009-08-26 삼성전자주식회사 액정표시장치
KR100980021B1 (ko) 2003-09-04 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판
JP4265788B2 (ja) 2003-12-05 2009-05-20 シャープ株式会社 液晶表示装置
CN100504553C (zh) 2004-02-06 2009-06-24 三星电子株式会社 薄膜晶体管阵列面板及包括该薄膜晶体管阵列面板的液晶显示器
JP4627148B2 (ja) * 2004-04-09 2011-02-09 株式会社 日立ディスプレイズ 表示装置
JP4693781B2 (ja) 2004-11-17 2011-06-01 シャープ株式会社 アクティブマトリクス基板及び表示装置
JP4841438B2 (ja) 2004-12-14 2011-12-21 シャープ株式会社 液晶表示装置および液晶表示装置の欠陥修正方法
TW200642268A (en) * 2005-04-28 2006-12-01 Sanyo Electric Co Compound semiconductor switching circuit device
KR101216688B1 (ko) * 2005-05-02 2012-12-31 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치
JP4703258B2 (ja) 2005-05-16 2011-06-15 シャープ株式会社 薄膜トランジスタ基板及び液晶表示パネル
US7537976B2 (en) * 2005-05-20 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor
EP1777690B1 (en) * 2005-10-18 2012-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI276902B (en) * 2005-12-16 2007-03-21 Innolux Display Corp Liquid crystal display device
US8212953B2 (en) * 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101189279B1 (ko) * 2006-01-26 2012-10-09 삼성디스플레이 주식회사 표시장치와 이의 제조방법
KR20070117820A (ko) 2006-06-09 2007-12-13 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 어레이 기판 및 이의 제조 방법
JP2008089646A (ja) 2006-09-29 2008-04-17 Sharp Corp 表示装置
TWI336805B (en) * 2006-12-07 2011-02-01 Chimei Innolux Corp Liquid crystal display device and driving method thereof
JP5081444B2 (ja) 2006-12-21 2012-11-28 株式会社ジャパンディスプレイイースト 表示装置
TWI352866B (en) * 2007-04-12 2011-11-21 Wintek Corp Liquid crystal display and active matrix substrate
JP5542297B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP5116359B2 (ja) * 2007-05-17 2013-01-09 株式会社半導体エネルギー研究所 液晶表示装置
JP5542296B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
EP2159632A4 (en) 2007-06-28 2011-08-10 Sharp Kk ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL SCREEN, LIQUID CRYSTAL DISPLAY UNIT, LIQUID CRYSTAL DISPLAY DEVICE, TELEVISION RECEIVER AND METHOD FOR PRODUCING A LIQUID CRYSTAL SCREEN
EP2073255B1 (en) * 2007-12-21 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Diode and display device comprising the diode
JP2009180981A (ja) 2008-01-31 2009-08-13 Mitsubishi Electric Corp アクティブマトリックス基板及びその製造方法
US20090213039A1 (en) * 2008-02-21 2009-08-27 Toppan Printing Co., Ltd. Display device
JP5540517B2 (ja) * 2008-02-22 2014-07-02 凸版印刷株式会社 画像表示装置
US7812348B2 (en) * 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
JP5113609B2 (ja) 2008-04-24 2013-01-09 パナソニック液晶ディスプレイ株式会社 表示装置及びその製造方法
JP2009288462A (ja) * 2008-05-28 2009-12-10 Ips Alpha Technology Ltd 表示装置及びその製造方法
JP2010003723A (ja) 2008-06-18 2010-01-07 Toppan Printing Co Ltd 薄膜トランジスタ及び薄膜トランジスタアレイ並びに画像表示装置
KR20100067612A (ko) 2008-12-11 2010-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 표시 장치
JP4743348B2 (ja) 2009-03-17 2011-08-10 凸版印刷株式会社 薄膜トランジスタアレイおよび薄膜トランジスタアレイを用いた画像表示装置
CN101893791A (zh) 2009-05-21 2010-11-24 陈俊 一种液晶显示阵列基板
TW201118460A (en) * 2009-11-20 2011-06-01 Innolux Display Corp Transflective liquid crystal display device and driving method thereof
US8598586B2 (en) * 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
EP2579237A4 (en) * 2010-05-24 2017-10-11 Sharp Kabushiki Kaisha Thin film transistor substrate and method for producing same
US8797487B2 (en) * 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007164172A (ja) * 2005-12-14 2007-06-28 Au Optronics Corp 液晶ディスプレイ、及び液晶ディスプレイの製造方法
WO2008096483A1 (ja) * 2007-02-09 2008-08-14 Sharp Kabushiki Kaisha アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法

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