KR102013734B1 - 표시 장치 - Google Patents

표시 장치 Download PDF

Info

Publication number
KR102013734B1
KR102013734B1 KR1020110131673A KR20110131673A KR102013734B1 KR 102013734 B1 KR102013734 B1 KR 102013734B1 KR 1020110131673 A KR1020110131673 A KR 1020110131673A KR 20110131673 A KR20110131673 A KR 20110131673A KR 102013734 B1 KR102013734 B1 KR 102013734B1
Authority
KR
South Korea
Prior art keywords
electrode
line
scan line
thin film
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110131673A
Other languages
English (en)
Korean (ko)
Other versions
KR20120069566A (ko
Inventor
아츠시 히로세
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20120069566A publication Critical patent/KR20120069566A/ko
Application granted granted Critical
Publication of KR102013734B1 publication Critical patent/KR102013734B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020110131673A 2010-12-20 2011-12-09 표시 장치 Expired - Fee Related KR102013734B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010282635 2010-12-20
JPJP-P-2010-282635 2010-12-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190047804A Division KR102095938B1 (ko) 2010-12-20 2019-04-24 표시 장치

Publications (2)

Publication Number Publication Date
KR20120069566A KR20120069566A (ko) 2012-06-28
KR102013734B1 true KR102013734B1 (ko) 2019-08-23

Family

ID=46233747

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020110131673A Expired - Fee Related KR102013734B1 (ko) 2010-12-20 2011-12-09 표시 장치
KR1020190047804A Active KR102095938B1 (ko) 2010-12-20 2019-04-24 표시 장치
KR1020200036137A Active KR102344940B1 (ko) 2010-12-20 2020-03-25 표시 장치
KR1020210187113A Active KR102392410B1 (ko) 2010-12-20 2021-12-24 표시 장치
KR1020220051231A Active KR102465196B1 (ko) 2010-12-20 2022-04-26 표시 장치

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020190047804A Active KR102095938B1 (ko) 2010-12-20 2019-04-24 표시 장치
KR1020200036137A Active KR102344940B1 (ko) 2010-12-20 2020-03-25 표시 장치
KR1020210187113A Active KR102392410B1 (ko) 2010-12-20 2021-12-24 표시 장치
KR1020220051231A Active KR102465196B1 (ko) 2010-12-20 2022-04-26 표시 장치

Country Status (4)

Country Link
US (8) US9568794B2 (enExample)
JP (10) JP5864053B2 (enExample)
KR (5) KR102013734B1 (enExample)
TW (4) TWI587057B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10304859B2 (en) * 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US9915848B2 (en) * 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6082912B2 (ja) * 2013-10-03 2017-02-22 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
US9882014B2 (en) * 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9190322B2 (en) * 2014-01-24 2015-11-17 Infineon Technologies Ag Method for producing a copper layer on a semiconductor body using a printing process
JP6283522B2 (ja) * 2014-01-29 2018-02-21 株式会社ジャパンディスプレイ 表示装置及び反射型液晶表示装置
JP2015191232A (ja) 2014-03-31 2015-11-02 ソニー株式会社 液晶表示装置
US20160155803A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
US10539839B2 (en) * 2015-02-12 2020-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device
CN106298840B (zh) * 2015-06-09 2019-08-02 群创光电股份有限公司 显示装置
JP6542610B2 (ja) 2015-08-20 2019-07-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6844845B2 (ja) * 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN109585491B (zh) * 2017-09-29 2020-11-03 曜凌光电股份有限公司 窄边框的有机发光二极管显示器
JP6999367B2 (ja) * 2017-11-01 2022-01-18 株式会社ジャパンディスプレイ 基板及び電気泳動装置
CN110034131B (zh) * 2019-04-17 2022-01-14 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板和显示装置
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US10964811B2 (en) * 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
KR102748031B1 (ko) 2019-08-09 2024-12-31 마이크론 테크놀로지, 인크 트랜지스터 및 트랜지스터의 형성 방법
CN114067709B (zh) * 2020-07-31 2023-11-28 深超光电（深圳）有限公司 导电性测试结构、薄膜晶体管阵列基板及显示面板
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors
US11937465B2 (en) * 2021-03-11 2024-03-19 Boe Technology Group Co., Ltd Array substrate, display panel and display device thereof
JP7612471B2 (ja) 2021-03-22 2025-01-14 株式会社Ｎｔｔドコモ 端末、基地局、および通信方法
KR102684960B1 (ko) * 2022-02-17 2024-07-15 와이엠씨 주식회사 힐록 발생이 억제되는 디스플레이 패널의 제조방법
KR20230126014A (ko) 2022-02-22 2023-08-29 (주)메디전자 허벅지 운동 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007164172A (ja) * 2005-12-14 2007-06-28 Au Optronics Corp 液晶ディスプレイ、及び液晶ディスプレイの製造方法
WO2008096483A1 (ja) * 2007-02-09 2008-08-14 Sharp Kabushiki Kaisha アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPH0646347B2 (ja) 1985-04-19 1994-06-15 松下電器産業株式会社 アクテイブマトリクス基板
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
GB2212659A (en) 1987-11-20 1989-07-26 Philips Electronic Associated Multi-level circuit cross-overs
JPH04204632A (ja) 1990-11-30 1992-07-27 Toshiba Corp 液晶表示装置
JPH05341322A (ja) 1992-06-12 1993-12-24 Hitachi Ltd 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
JPH11288006A (ja) 1998-04-06 1999-10-19 Hitachi Ltd 液晶表示装置
JP3796072B2 (ja) 1999-08-04 2006-07-12 シャープ株式会社 透過型液晶表示装置
US6583829B2 (en) * 2000-03-06 2003-06-24 Hitachi, Ltd. Liquid crystal display having an opening in each pixel electrode corresponding to each storage line
KR100482720B1 (ko) * 2000-03-21 2005-04-13 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치
JP3918496B2 (ja) * 2001-10-22 2007-05-23 株式会社日立製作所 液晶表示装置及びその製造方法
CN1297012C (zh) * 2002-02-06 2007-01-24 株式会社东芝 平面检测型固体摄像装置
JP4004835B2 (ja) 2002-04-02 2007-11-07 株式会社アドバンスト・ディスプレイ 薄膜トランジスタアレイ基板の製造方法
JP4248306B2 (ja) 2002-06-17 2009-04-02 シャープ株式会社 液晶表示装置
KR100913303B1 (ko) 2003-05-06 2009-08-26 삼성전자주식회사 액정표시장치
KR100980021B1 (ko) 2003-09-04 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판
JP4265788B2 (ja) 2003-12-05 2009-05-20 シャープ株式会社 液晶表示装置
CN100504553C (zh) 2004-02-06 2009-06-24 三星电子株式会社 薄膜晶体管阵列面板及包括该薄膜晶体管阵列面板的液晶显示器
JP4627148B2 (ja) * 2004-04-09 2011-02-09 株式会社 日立ディスプレイズ 表示装置
US7812893B2 (en) 2004-11-17 2010-10-12 Sharp Kabushiki Kaisha Active matrix substrate where a portion of the storage capacitor wiring or the scanning signal line overlaps with the drain lead-out wiring connected to the drain electrode of a thin film transistor and display device having such an active matrix substrate
WO2006064789A1 (ja) * 2004-12-14 2006-06-22 Sharp Kabushiki Kaisha 液晶表示装置および液晶表示装置の欠陥修正方法
TW200642268A (en) * 2005-04-28 2006-12-01 Sanyo Electric Co Compound semiconductor switching circuit device
KR101216688B1 (ko) * 2005-05-02 2012-12-31 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치
JP4703258B2 (ja) 2005-05-16 2011-06-15 シャープ株式会社 薄膜トランジスタ基板及び液晶表示パネル
US7537976B2 (en) * 2005-05-20 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor
EP1777690B1 (en) * 2005-10-18 2012-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI276902B (en) * 2005-12-16 2007-03-21 Innolux Display Corp Liquid crystal display device
US8212953B2 (en) * 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101189279B1 (ko) * 2006-01-26 2012-10-09 삼성디스플레이 주식회사 표시장치와 이의 제조방법
KR20070117820A (ko) 2006-06-09 2007-12-13 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 어레이 기판 및 이의 제조 방법
JP2008089646A (ja) 2006-09-29 2008-04-17 Sharp Corp 表示装置
TWI336805B (en) * 2006-12-07 2011-02-01 Chimei Innolux Corp Liquid crystal display device and driving method thereof
JP5081444B2 (ja) 2006-12-21 2012-11-28 株式会社ジャパンディスプレイイースト 表示装置
TWI352866B (en) * 2007-04-12 2011-11-21 Wintek Corp Liquid crystal display and active matrix substrate
JP5542297B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP5542296B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP5116359B2 (ja) * 2007-05-17 2013-01-09 株式会社半導体エネルギー研究所 液晶表示装置
WO2009001578A1 (ja) 2007-06-28 2008-12-31 Sharp Kabushiki Kaisha アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、液晶パネルの製造方法
EP2073255B1 (en) * 2007-12-21 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Diode and display device comprising the diode
JP2009180981A (ja) 2008-01-31 2009-08-13 Mitsubishi Electric Corp アクティブマトリックス基板及びその製造方法
US20090213039A1 (en) * 2008-02-21 2009-08-27 Toppan Printing Co., Ltd. Display device
JP5540517B2 (ja) * 2008-02-22 2014-07-02 凸版印刷株式会社 画像表示装置
US7812348B2 (en) * 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
JP5113609B2 (ja) 2008-04-24 2013-01-09 パナソニック液晶ディスプレイ株式会社 表示装置及びその製造方法
JP2009288462A (ja) * 2008-05-28 2009-12-10 Ips Alpha Technology Ltd 表示装置及びその製造方法
JP2010003723A (ja) 2008-06-18 2010-01-07 Toppan Printing Co Ltd 薄膜トランジスタ及び薄膜トランジスタアレイ並びに画像表示装置
KR20100067612A (ko) 2008-12-11 2010-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 표시 장치
WO2010107027A1 (ja) 2009-03-17 2010-09-23 凸版印刷株式会社 薄膜トランジスタアレイおよび薄膜トランジスタアレイを用いた画像表示装置
CN101893791A (zh) 2009-05-21 2010-11-24 陈俊 一种液晶显示阵列基板
TW201118460A (en) * 2009-11-20 2011-06-01 Innolux Display Corp Transflective liquid crystal display device and driving method thereof
US8598586B2 (en) * 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP5133468B2 (ja) * 2010-05-24 2013-01-30 シャープ株式会社 薄膜トランジスタ基板及びその製造方法
US8797487B2 (en) * 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007164172A (ja) * 2005-12-14 2007-06-28 Au Optronics Corp 液晶ディスプレイ、及び液晶ディスプレイの製造方法
WO2008096483A1 (ja) * 2007-02-09 2008-08-14 Sharp Kabushiki Kaisha アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法

Also Published As

Publication number Publication date
JP6836687B1 (ja) 2021-03-03
US9568794B2 (en) 2017-02-14
TW201232138A (en) 2012-08-01
JP2012145927A (ja) 2012-08-02
US10564499B2 (en) 2020-02-18
US20170082902A1 (en) 2017-03-23
US20220075235A1 (en) 2022-03-10
KR20200034991A (ko) 2020-04-01
US9885932B2 (en) 2018-02-06
JP2016106246A (ja) 2016-06-16
US20120154346A1 (en) 2012-06-21
KR102095938B1 (ko) 2020-04-01
JP2020077002A (ja) 2020-05-21
TW201716843A (zh) 2017-05-16
JP2017072852A (ja) 2017-04-13
JP2021047413A (ja) 2021-03-25
KR20190045898A (ko) 2019-05-03
US11754896B2 (en) 2023-09-12
US20240077773A1 (en) 2024-03-07
US20250155760A1 (en) 2025-05-15
US9645463B2 (en) 2017-05-09
JP5864053B2 (ja) 2016-02-17
US20170235201A1 (en) 2017-08-17
KR102392410B1 (ko) 2022-04-28
KR20220002202A (ko) 2022-01-06
JP6207713B2 (ja) 2017-10-04
JP2018022165A (ja) 2018-02-08
US20180149940A1 (en) 2018-05-31
US20200183241A1 (en) 2020-06-11
KR20120069566A (ko) 2012-06-28
TW201716844A (zh) 2017-05-16
JP2018194865A (ja) 2018-12-06
JP2020112822A (ja) 2020-07-27
KR102344940B1 (ko) 2021-12-28
TWI587057B (zh) 2017-06-11
US11181793B2 (en) 2021-11-23
TWI587056B (zh) 2017-06-11
US12259624B2 (en) 2025-03-25
TWI608283B (zh) 2017-12-11
JP6077093B2 (ja) 2017-02-08
TW201716845A (zh) 2017-05-16
JP2023002708A (ja) 2023-01-10
JP2024094335A (ja) 2024-07-09
TWI587058B (zh) 2017-06-11
JP6685354B2 (ja) 2020-04-22
KR102465196B1 (ko) 2022-11-09
KR20220061064A (ko) 2022-05-12

Similar Documents

Publication Publication Date Title
KR102465196B1 (ko) 표시 장치
KR101827329B1 (ko) 박막 트랜지스의 제작 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220820

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220820