KR101993472B1 - 레지스트 패턴의 하부막 형성용 화합물, 조성물 및 이를 이용한 하부막의 형성방법 - Google Patents

레지스트 패턴의 하부막 형성용 화합물, 조성물 및 이를 이용한 하부막의 형성방법 Download PDF

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KR101993472B1
KR101993472B1 KR1020120100898A KR20120100898A KR101993472B1 KR 101993472 B1 KR101993472 B1 KR 101993472B1 KR 1020120100898 A KR1020120100898 A KR 1020120100898A KR 20120100898 A KR20120100898 A KR 20120100898A KR 101993472 B1 KR101993472 B1 KR 101993472B1
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formula
forming
compound
film
lower layer
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KR20140034504A (ko
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한수영
이정열
이재우
김재현
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주식회사 동진쎄미켐
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Priority to KR1020120100898A priority Critical patent/KR101993472B1/ko
Priority to TW102132774A priority patent/TWI598694B/zh
Priority to JP2015531853A priority patent/JP6247693B2/ja
Priority to US14/427,010 priority patent/US9651867B2/en
Priority to PCT/KR2013/008258 priority patent/WO2014042443A1/ko
Publication of KR20140034504A publication Critical patent/KR20140034504A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020120100898A 2012-09-12 2012-09-12 레지스트 패턴의 하부막 형성용 화합물, 조성물 및 이를 이용한 하부막의 형성방법 Active KR101993472B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120100898A KR101993472B1 (ko) 2012-09-12 2012-09-12 레지스트 패턴의 하부막 형성용 화합물, 조성물 및 이를 이용한 하부막의 형성방법
TW102132774A TWI598694B (zh) 2012-09-12 2013-09-11 用於形成光阻下層膜之化合物及組成物，以及使用該化合物及組成物形成光阻下層膜之方法
JP2015531853A JP6247693B2 (ja) 2012-09-12 2013-09-12 レジストパターンの下部膜形成用化合物、組成物およびこれを利用した下部膜の形成方法
US14/427,010 US9651867B2 (en) 2012-09-12 2013-09-12 Compound and composition for forming lower film of resist pattern, and method for forming lower film using same
PCT/KR2013/008258 WO2014042443A1 (ko) 2012-09-12 2013-09-12 레지스트 패턴의 하부막 형성용 화합물, 조성물 및 이를 이용한 하부막의 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120100898A KR101993472B1 (ko) 2012-09-12 2012-09-12 레지스트 패턴의 하부막 형성용 화합물, 조성물 및 이를 이용한 하부막의 형성방법

Publications (2)

Publication Number Publication Date
KR20140034504A KR20140034504A (ko) 2014-03-20
KR101993472B1 true KR101993472B1 (ko) 2019-09-30

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US (1) US9651867B2 (enExample)
JP (1) JP6247693B2 (enExample)
KR (1) KR101993472B1 (enExample)
TW (1) TWI598694B (enExample)
WO (1) WO2014042443A1 (enExample)

Families Citing this family (8)

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KR101788090B1 (ko) 2014-11-28 2017-11-15 삼성에스디아이 주식회사 중합체, 유기막 조성물, 유기막, 및 패턴형성방법
KR102441290B1 (ko) * 2015-07-29 2022-09-07 주식회사 동진쎄미켐 유기 반사방지막 형성용 조성물
KR102653125B1 (ko) * 2016-01-13 2024-04-01 삼성전자주식회사 포토레지스트의 하부막 조성물 및 이를 이용한 패턴 형성 방법
KR102096270B1 (ko) * 2017-07-14 2020-04-02 주식회사 엘지화학 중성층 조성물
US10340179B2 (en) 2017-09-13 2019-07-02 International Business Machines Corporation Via formation using directed self-assembly of a block copolymer
CN108192643B (zh) * 2018-01-30 2020-07-28 深圳市华星光电技术有限公司 自取向材料、自取向液晶材料、液晶面板及其制作方法
KR102264694B1 (ko) * 2018-06-11 2021-06-11 삼성에스디아이 주식회사 고분자 가교제, 이를 포함하는 레지스트 하층막용 조성물, 및 이를 이용한 패턴형성방법
KR102751329B1 (ko) 2019-03-28 2025-01-07 삼성전자주식회사 반사방지막 형성용 폴리머 및 조성물과 반사방지막을 이용하는 집적회로 소자의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920886B1 (ko) 2007-12-13 2009-10-09 주식회사 효성 현상 가능한 유기 반사방지막 형성용 조성물 및 이로부터형성된 유기 반사방지막

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3804792B2 (ja) * 2001-04-10 2006-08-02 日産化学工業株式会社 リソグラフィー用反射防止膜形成組成物
KR100886314B1 (ko) 2007-06-25 2009-03-04 금호석유화학 주식회사 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
US8999492B2 (en) * 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8221965B2 (en) 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR101715343B1 (ko) * 2009-03-11 2017-03-14 주식회사 동진쎄미켐 반도체 소자의 미세 패턴 형성 방법
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US8114306B2 (en) 2009-05-22 2012-02-14 International Business Machines Corporation Method of forming sub-lithographic features using directed self-assembly of polymers
KR101710415B1 (ko) * 2009-09-14 2017-02-27 주식회사 동진쎄미켐 유기 반사방지막 형성용 이소시아누레이트 화합물 및 이를 포함하는 조성물
KR20130034778A (ko) 2011-09-29 2013-04-08 주식회사 동진쎄미켐 유도된 자가정렬 공정을 이용한 반도체 소자의 미세패턴 형성 방법
KR20130120586A (ko) * 2012-04-26 2013-11-05 삼성전자주식회사 패턴 형성 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920886B1 (ko) 2007-12-13 2009-10-09 주식회사 효성 현상 가능한 유기 반사방지막 형성용 조성물 및 이로부터형성된 유기 반사방지막

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Publication number Publication date
US20150286139A1 (en) 2015-10-08
KR20140034504A (ko) 2014-03-20
WO2014042443A1 (ko) 2014-03-20
JP2015535813A (ja) 2015-12-17
TWI598694B (zh) 2017-09-11
US9651867B2 (en) 2017-05-16
JP6247693B2 (ja) 2017-12-13
TW201421165A (zh) 2014-06-01

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