KR101958421B1 - 집적 회로, 상기 집적 회로에 따른 반도체 소자 및 표준 셀 라이브러리 - Google Patents

집적 회로, 상기 집적 회로에 따른 반도체 소자 및 표준 셀 라이브러리 Download PDF

Info

Publication number
KR101958421B1
KR101958421B1 KR1020150003466A KR20150003466A KR101958421B1 KR 101958421 B1 KR101958421 B1 KR 101958421B1 KR 1020150003466 A KR1020150003466 A KR 1020150003466A KR 20150003466 A KR20150003466 A KR 20150003466A KR 101958421 B1 KR101958421 B1 KR 101958421B1
Authority
KR
South Korea
Prior art keywords
contact
contacts
conductive line
disposed
active region
Prior art date
Application number
KR1020150003466A
Other languages
English (en)
Korean (ko)
Other versions
KR20160011562A (ko
Inventor
백상훈
도정호
박선영
오상규
이승영
원효식
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to US14/801,121 priority Critical patent/US9431383B2/en
Priority to TW104123475A priority patent/TWI628741B/zh
Priority to CN201710397056.9A priority patent/CN107104101B/zh
Priority to CN201510434904.XA priority patent/CN105304624B/zh
Priority to CN201710387771.4A priority patent/CN107180827B/zh
Priority to CN201910079668.2A priority patent/CN109616470B/zh
Publication of KR20160011562A publication Critical patent/KR20160011562A/ko
Priority to US15/232,223 priority patent/US9716106B2/en
Priority to US15/612,349 priority patent/US9837437B2/en
Application granted granted Critical
Publication of KR101958421B1 publication Critical patent/KR101958421B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H01L2027/11868—Macro-architecture
    • H01L2027/11874—Layout specification, i.e. inner core region
    • H01L2027/11875—Wiring region, routing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Architecture (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020150003466A 2014-07-22 2015-01-09 집적 회로, 상기 집적 회로에 따른 반도체 소자 및 표준 셀 라이브러리 KR101958421B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US14/801,121 US9431383B2 (en) 2014-07-22 2015-07-16 Integrated circuit, semiconductor device based on integrated circuit, and standard cell library
TW104123475A TWI628741B (zh) 2014-07-22 2015-07-21 積體電路、基於積體電路的半導體元件及標準單元庫
CN201710397056.9A CN107104101B (zh) 2014-07-22 2015-07-22 基于集成电路的半导体装置
CN201510434904.XA CN105304624B (zh) 2014-07-22 2015-07-22 集成电路、基于集成电路的半导体装置和标准单元库
CN201710387771.4A CN107180827B (zh) 2014-07-22 2015-07-22 集成电路、基于集成电路的半导体装置和标准单元库
CN201910079668.2A CN109616470B (zh) 2014-07-22 2015-07-22 集成电路、基于集成电路的半导体装置和标准单元库
US15/232,223 US9716106B2 (en) 2014-07-22 2016-08-09 Integrated circuit, semiconductor device based on integrated circuit, and standard cell library
US15/612,349 US9837437B2 (en) 2014-07-22 2017-06-02 Integrated circuit, semiconductor device based on integrated circuit, and standard cell library

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462027401P 2014-07-22 2014-07-22
US62/027,401 2014-07-22

Publications (2)

Publication Number Publication Date
KR20160011562A KR20160011562A (ko) 2016-02-01
KR101958421B1 true KR101958421B1 (ko) 2019-03-14

Family

ID=55354077

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150003466A KR101958421B1 (ko) 2014-07-22 2015-01-09 집적 회로, 상기 집적 회로에 따른 반도체 소자 및 표준 셀 라이브러리

Country Status (3)

Country Link
KR (1) KR101958421B1 (zh)
CN (1) CN109616470B (zh)
TW (1) TWI628741B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102514097B1 (ko) * 2016-08-03 2023-03-23 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9812324B1 (en) * 2017-01-13 2017-11-07 Globalfoundries Inc. Methods to control fin tip placement
US10319668B2 (en) 2017-02-08 2019-06-11 Samsung Electronics Co., Ltd. Integrated circuit having contact jumper
KR102295527B1 (ko) * 2017-02-08 2021-08-31 삼성전자 주식회사 컨택 점퍼를 포함하는 집적 회로
DE102018124711B4 (de) 2017-11-21 2024-01-11 Taiwan Semiconductor Manufacturing Co. Ltd. Layout-Verfahren für Standardzellenstrukturen
US10733352B2 (en) 2017-11-21 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and layout method for standard cell structures
CN111916443A (zh) * 2020-08-10 2020-11-10 泉芯集成电路制造(济南)有限公司 一种鳍式场效应晶体管及其版图结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200688A (ja) 2002-12-16 2004-07-15 Hynix Semiconductor Inc Ｍｏｓキャパシターを有するｄｒａｍセル及びその製造方法
JP2008182083A (ja) 2007-01-25 2008-08-07 Toshiba Corp 半導体記憶装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142599A (ja) * 2001-11-01 2003-05-16 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6662350B2 (en) * 2002-01-28 2003-12-09 International Business Machines Corporation FinFET layout generation
JP4036688B2 (ja) * 2002-06-18 2008-01-23 松下電器産業株式会社 自動配置配線用スタンダードセルライブラリ及び半導体集積装置
US6943405B2 (en) * 2003-07-01 2005-09-13 International Business Machines Corporation Integrated circuit having pairs of parallel complementary FinFETs
KR100702552B1 (ko) * 2003-12-22 2007-04-04 인터내셔널 비지네스 머신즈 코포레이션 이중 게이트 ＦｉｎＦＥＴ 디자인을 위한 자동화 레이어생성 방법 및 장치
JP2007012855A (ja) * 2005-06-30 2007-01-18 Matsushita Electric Ind Co Ltd 半導体集積回路、標準セル、標準セルライブラリ、半導体集積回路の設計方法および半導体集積回路の設計装置
US9362290B2 (en) * 2010-02-08 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell layout
FR2968128B1 (fr) * 2010-11-26 2013-01-04 St Microelectronics Sa Cellule precaracterisee pour circuit intégré
JP2012222151A (ja) * 2011-04-08 2012-11-12 Panasonic Corp 半導体集積回路装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200688A (ja) 2002-12-16 2004-07-15 Hynix Semiconductor Inc Ｍｏｓキャパシターを有するｄｒａｍセル及びその製造方法
JP2008182083A (ja) 2007-01-25 2008-08-07 Toshiba Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
CN109616470B (zh) 2023-07-04
TWI628741B (zh) 2018-07-01
TW201611185A (zh) 2016-03-16
KR20160011562A (ko) 2016-02-01
CN109616470A (zh) 2019-04-12

Similar Documents

Publication Publication Date Title
KR101958421B1 (ko) 집적 회로, 상기 집적 회로에 따른 반도체 소자 및 표준 셀 라이브러리
US9837437B2 (en) Integrated circuit, semiconductor device based on integrated circuit, and standard cell library
US9905561B2 (en) Integrated circuit and semiconductor device
US10108772B2 (en) Methods of generating integrated circuit layout using standard cell library
US10720429B2 (en) Integrated circuit and standard cell library
KR102308781B1 (ko) 집적 회로 및 반도체 장치
US10541243B2 (en) Semiconductor device including a gate electrode and a conductive structure
KR101953240B1 (ko) 핀 트랜지스터 및 이를 포함하는 반도체 집적 회로
US10691859B2 (en) Integrated circuit and method of designing layout of integrated circuit
CN107464802B (zh) 集成电路和标准单元库
US10445455B2 (en) Integrated circuit for multiple patterning lithography, a computing system and a computer-implemented method for designing an integrated circuit
KR101651230B1 (ko) 집적 회로 및 표준 셀 라이브러리
US9436792B2 (en) Method of designing layout of integrated circuit and method of manufacturing integrated circuit
KR101697343B1 (ko) 집적 회로의 레이아웃 설계 방법 및 상기 집적 회로의 제조 방법
CN111916455A (zh) Vfet单元布置的方法和单元架构
KR101979733B1 (ko) 적어도 하나의 핀 트랜지스터를 가지는 셀 및 이를 포함하는 반도체 집적 회로

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right