KR101957816B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR101957816B1
KR101957816B1 KR1020120093016A KR20120093016A KR101957816B1 KR 101957816 B1 KR101957816 B1 KR 101957816B1 KR 1020120093016 A KR1020120093016 A KR 1020120093016A KR 20120093016 A KR20120093016 A KR 20120093016A KR 101957816 B1 KR101957816 B1 KR 101957816B1
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KR
South Korea
Prior art keywords
layer
light emitting
semiconductor layer
emitting device
conductivity type
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Expired - Fee Related
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KR1020120093016A
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English (en)
Korean (ko)
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KR20140026069A (ko
Inventor
김동하
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020120093016A priority Critical patent/KR101957816B1/ko
Priority to US13/973,206 priority patent/US9478718B2/en
Priority to JP2013172804A priority patent/JP6294031B2/ja
Priority to EP13181618.3A priority patent/EP2701211B1/en
Publication of KR20140026069A publication Critical patent/KR20140026069A/ko
Application granted granted Critical
Publication of KR101957816B1 publication Critical patent/KR101957816B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020120093016A 2012-08-24 2012-08-24 발광 소자 Expired - Fee Related KR101957816B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020120093016A KR101957816B1 (ko) 2012-08-24 2012-08-24 발광 소자
US13/973,206 US9478718B2 (en) 2012-08-24 2013-08-22 Light emitting device
JP2013172804A JP6294031B2 (ja) 2012-08-24 2013-08-23 発光素子
EP13181618.3A EP2701211B1 (en) 2012-08-24 2013-08-23 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120093016A KR101957816B1 (ko) 2012-08-24 2012-08-24 발광 소자

Publications (2)

Publication Number Publication Date
KR20140026069A KR20140026069A (ko) 2014-03-05
KR101957816B1 true KR101957816B1 (ko) 2019-03-13

Family

ID=49028998

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120093016A Expired - Fee Related KR101957816B1 (ko) 2012-08-24 2012-08-24 발광 소자

Country Status (4)

Country Link
US (1) US9478718B2 (enExample)
EP (1) EP2701211B1 (enExample)
JP (1) JP6294031B2 (enExample)
KR (1) KR101957816B1 (enExample)

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Publication number Priority date Publication date Assignee Title
US20160005919A1 (en) * 2013-02-05 2016-01-07 Tokuyama Corporation Nitride semiconductor light emitting device
KR102066620B1 (ko) * 2013-07-18 2020-01-16 엘지이노텍 주식회사 발광 소자
WO2016004374A1 (en) * 2014-07-02 2016-01-07 Trustees Of Boston University Ultraviolet light emitting diodes
TWI625868B (zh) 2014-07-03 2018-06-01 晶元光電股份有限公司 光電元件及其製造方法
TWI883921B (zh) * 2014-07-03 2025-05-11 晶元光電股份有限公司 光電元件
CN110676367B (zh) * 2014-07-31 2023-03-24 首尔伟傲世有限公司 发光二极管
KR102322692B1 (ko) * 2015-05-29 2021-11-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 자외선 발광소자
US10950747B2 (en) 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
WO2017004497A1 (en) * 2015-07-01 2017-01-05 Sensor Electronic Technology, Inc. Substrate structure removal
KR102378952B1 (ko) * 2015-08-27 2022-03-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 발광소자 패키지
EP3350844B1 (en) 2015-09-17 2021-10-27 Crystal Is, Inc. Ultraviolet light-emitting devices incorporating two-dimensional hole gases
JP6573076B2 (ja) * 2016-02-01 2019-09-11 パナソニック株式会社 紫外線発光素子
JP6805674B2 (ja) * 2016-09-21 2020-12-23 豊田合成株式会社 発光素子及びその製造方法
CN106784349B (zh) * 2016-12-21 2020-02-07 Tcl集团股份有限公司 一种能级势垒高度连续变化的量子点固态膜及其制备方法
JP6812790B2 (ja) * 2016-12-28 2021-01-13 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
US11069834B2 (en) * 2017-09-18 2021-07-20 King Abdullah University Of Science And Technology Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
DE102018120490A1 (de) 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
KR102848932B1 (ko) * 2019-10-04 2025-08-20 캠브리지 엔터프라이즈 리미티드 등축정계 GaN의 양자 와이어로부터의 편광된 방출광
WO2022109853A1 (zh) * 2020-11-25 2022-06-02 苏州晶湛半导体有限公司 光电器件及其制备方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2006066556A (ja) * 2004-08-25 2006-03-09 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
US20130292685A1 (en) 2012-05-05 2013-11-07 Texas Tech University System Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures

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JP3468082B2 (ja) * 1998-02-26 2003-11-17 日亜化学工業株式会社 窒化物半導体素子
JPH11340505A (ja) * 1998-05-25 1999-12-10 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP4465941B2 (ja) * 2001-11-22 2010-05-26 富士ゼロックス株式会社 紫外線受光素子
US7358539B2 (en) 2003-04-09 2008-04-15 Lumination Llc Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts
JP5032171B2 (ja) * 2007-03-26 2012-09-26 株式会社東芝 半導体発光素子およびその製造方法ならびに発光装置
WO2009072365A1 (ja) * 2007-12-07 2009-06-11 Idemitsu Kosan Co., Ltd. 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜
US8394711B2 (en) * 2009-02-12 2013-03-12 The Curators Of The University Of Missouri Systems and methods for co-doping wide band gap materials
EP2418696A4 (en) * 2009-04-09 2014-02-19 Panasonic Corp NITRIDE SEMICONDUCTOR LIGHT ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR LIGHT ELEMENT AND METHOD FOR PRODUCING A LIGHTING DEVICE
WO2011018942A1 (ja) * 2009-08-13 2011-02-17 昭和電工株式会社 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、半導体発光装置の製造方法、半導体発光装置を用いた照明装置および電子機器
KR101028286B1 (ko) 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20120041439A (ko) * 2010-10-21 2012-05-02 한국광기술원 질화물계 반도체 소자 및 그의 제조 방법
KR20120051205A (ko) 2010-11-12 2012-05-22 엘지이노텍 주식회사 발광 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066556A (ja) * 2004-08-25 2006-03-09 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
US20130292685A1 (en) 2012-05-05 2013-11-07 Texas Tech University System Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures

Also Published As

Publication number Publication date
US20140054633A1 (en) 2014-02-27
EP2701211B1 (en) 2019-04-24
JP6294031B2 (ja) 2018-03-14
US9478718B2 (en) 2016-10-25
JP2014045192A (ja) 2014-03-13
KR20140026069A (ko) 2014-03-05
EP2701211A3 (en) 2016-01-13
EP2701211A2 (en) 2014-02-26

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