KR101923274B1 - 다이 본더 및 본딩 방법 - Google Patents

다이 본더 및 본딩 방법 Download PDF

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Publication number
KR101923274B1
KR101923274B1 KR1020160153596A KR20160153596A KR101923274B1 KR 101923274 B1 KR101923274 B1 KR 101923274B1 KR 1020160153596 A KR1020160153596 A KR 1020160153596A KR 20160153596 A KR20160153596 A KR 20160153596A KR 101923274 B1 KR101923274 B1 KR 101923274B1
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South Korea
Prior art keywords
waveform
die
bonding
recognition
reproducibility
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Korean (ko)
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KR20170108786A (ko
Inventor
히로시 마끼
류이찌 다까노
히데하루 고바시
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파스포드 테크놀로지 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H01L21/52—
    • H01L21/67712—
    • H01L21/68—
    • H01L22/12—
    • H01L24/03—
    • H01L24/04—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors

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  • Die Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Supply And Installment Of Electrical Components (AREA)
KR1020160153596A 2016-03-17 2016-11-17 다이 본더 및 본딩 방법 Active KR101923274B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-053169 2016-03-17
JP2016053169A JP6667326B2 (ja) 2016-03-17 2016-03-17 ダイボンダおよびボンディング方法

Publications (2)

Publication Number Publication Date
KR20170108786A KR20170108786A (ko) 2017-09-27
KR101923274B1 true KR101923274B1 (ko) 2018-11-28

Family

ID=59904684

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160153596A Active KR101923274B1 (ko) 2016-03-17 2016-11-17 다이 본더 및 본딩 방법

Country Status (4)

Country Link
JP (1) JP6667326B2 (https=)
KR (1) KR101923274B1 (https=)
CN (1) CN107204302B (https=)
TW (1) TWI598968B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7018341B2 (ja) * 2018-03-26 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
US11069555B2 (en) * 2018-09-03 2021-07-20 Assembleon B.V. Die attach systems, and methods of attaching a die to a substrate
JP7291586B2 (ja) * 2019-09-19 2023-06-15 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
KR102377826B1 (ko) * 2020-03-06 2022-03-23 세메스 주식회사 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치
KR102377825B1 (ko) * 2020-03-06 2022-03-23 세메스 주식회사 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치
KR102654727B1 (ko) * 2021-07-21 2024-04-03 세메스 주식회사 다이 본딩 방법 및 다이 본딩 장치
WO2024018937A1 (ja) * 2022-07-21 2024-01-25 ボンドテック株式会社 接合方法および接合装置
JP2026017620A (ja) * 2024-07-24 2026-02-05 ファスフォードテクノロジ株式会社 診断装置、実装装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120075079A1 (en) 2010-09-24 2012-03-29 Hitachi High-Tech Instruments Co., Ltd. Tool Management Method of Die Bonder and Die Bonder
JP2012234952A (ja) * 2011-04-28 2012-11-29 Shibaura Mechatronics Corp 電子部品の実装装置及び実装方法
US20130068823A1 (en) 2011-09-15 2013-03-21 Hitachi High-Tech Instruments Co., Ltd. Die Bonder and Bonding Method
JP2014011287A (ja) * 2012-06-29 2014-01-20 Ohashi Seisakusho:Kk 半導体チップの送り装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635889B2 (ja) * 1992-06-24 1997-07-30 株式会社東芝 ダイボンディング装置
JP2006156550A (ja) * 2004-11-26 2006-06-15 Tsukuba Seiko Co Ltd ダイボンディング装置
JP5150155B2 (ja) * 2007-02-23 2013-02-20 株式会社東芝 リニアアクチュエータおよびリニアアクチュエータを利用した装置
WO2009119193A1 (ja) * 2008-03-28 2009-10-01 芝浦メカトロニクス株式会社 電子部品の実装装置及び実装方法
JP5666246B2 (ja) * 2010-10-29 2015-02-12 株式会社日立ハイテクインスツルメンツ ダイボンダ装置およびダイボンダ方法
KR101850738B1 (ko) * 2011-05-19 2018-04-24 주식회사 탑 엔지니어링 실시간 동작 데이터의 ｕｉ화면을 구성하는 다이본더
JP5771466B2 (ja) * 2011-07-12 2015-09-02 ファスフォードテクノロジ株式会社 ダイボンダ及びダイボンダの接合材供給方法
JP2015056596A (ja) * 2013-09-13 2015-03-23 株式会社日立ハイテクインスツルメンツ ダイボンダ及びダイボンダの構成方法
JP6324778B2 (ja) * 2014-03-18 2018-05-16 ファスフォードテクノロジ株式会社 ダイボンダの実装位置補正方法並びにダイボンダ及びボンディング方法
JP2015195261A (ja) * 2014-03-31 2015-11-05 ファスフォードテクノロジ株式会社 ダイボンダ及び半導体製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120075079A1 (en) 2010-09-24 2012-03-29 Hitachi High-Tech Instruments Co., Ltd. Tool Management Method of Die Bonder and Die Bonder
JP2012234952A (ja) * 2011-04-28 2012-11-29 Shibaura Mechatronics Corp 電子部品の実装装置及び実装方法
US20130068823A1 (en) 2011-09-15 2013-03-21 Hitachi High-Tech Instruments Co., Ltd. Die Bonder and Bonding Method
JP2014011287A (ja) * 2012-06-29 2014-01-20 Ohashi Seisakusho:Kk 半導体チップの送り装置

Also Published As

Publication number Publication date
JP6667326B2 (ja) 2020-03-18
TWI598968B (zh) 2017-09-11
CN107204302B (zh) 2020-06-30
KR20170108786A (ko) 2017-09-27
JP2017168693A (ja) 2017-09-21
CN107204302A (zh) 2017-09-26
TW201810457A (zh) 2018-03-16

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