KR101909301B1 - Euv용으로 설계된 마이크로리소그래피 노광 장치의 투영 오브젝티브 및 투영 오브젝티브를 광학적으로 조절하는 방법 - Google Patents

Euv용으로 설계된 마이크로리소그래피 노광 장치의 투영 오브젝티브 및 투영 오브젝티브를 광학적으로 조절하는 방법 Download PDF

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KR101909301B1
KR101909301B1 KR1020137014144A KR20137014144A KR101909301B1 KR 101909301 B1 KR101909301 B1 KR 101909301B1 KR 1020137014144 A KR1020137014144 A KR 1020137014144A KR 20137014144 A KR20137014144 A KR 20137014144A KR 101909301 B1 KR101909301 B1 KR 101909301B1
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South Korea
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mirror
projection objective
segments
image plane
projection
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KR20130102093A (ko
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하르트무트 엔키시
스테판 뮐렌더
한스-위르겐 만
롤프 프라이만
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/182—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors
    • G02B7/198—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors with means for adjusting the mirror relative to its support
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020137014144A 2010-11-05 2011-11-03 Euv용으로 설계된 마이크로리소그래피 노광 장치의 투영 오브젝티브 및 투영 오브젝티브를 광학적으로 조절하는 방법 Active KR101909301B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41052110P 2010-11-05 2010-11-05
DE102010043498.1 2010-11-05
US61/410,521 2010-11-05
DE201010043498 DE102010043498A1 (de) 2010-11-05 2010-11-05 Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
PCT/EP2011/069308 WO2012059537A1 (en) 2010-11-05 2011-11-03 Projection objective of a microlithographic exposure apparatus

Publications (2)

Publication Number Publication Date
KR20130102093A KR20130102093A (ko) 2013-09-16
KR101909301B1 true KR101909301B1 (ko) 2018-12-10

Family

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KR1020137014144A Active KR101909301B1 (ko) 2010-11-05 2011-11-03 Euv용으로 설계된 마이크로리소그래피 노광 장치의 투영 오브젝티브 및 투영 오브젝티브를 광학적으로 조절하는 방법

Country Status (8)

Country Link
US (2) US20130242278A1 (enExample)
EP (1) EP2635937B1 (enExample)
JP (1) JP5950129B2 (enExample)
KR (1) KR101909301B1 (enExample)
CN (1) CN103189800B (enExample)
DE (1) DE102010043498A1 (enExample)
TW (1) TWI579648B (enExample)
WO (1) WO2012059537A1 (enExample)

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DE102010041623A1 (de) * 2010-09-29 2012-03-29 Carl Zeiss Smt Gmbh Spiegel
DE102010043498A1 (de) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102011076549A1 (de) 2011-05-26 2012-11-29 Carl Zeiss Smt Gmbh Optische Anordnung in einer mikrolithographischen Projektionsbelichtungsanlage
DE102012212064A1 (de) * 2012-07-11 2014-01-16 Carl Zeiss Smt Gmbh Lithographianlage mit segmentiertem Spiegel
US9448343B2 (en) 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
GB2513927A (en) * 2013-05-10 2014-11-12 Zeiss Carl Smt Gmbh Optical element arrangement with an optical element split into optical sub-elements
CN103488061B (zh) * 2013-10-09 2015-01-21 北京理工大学 极紫外光刻机中匹配多个物镜的照明系统调整与设计方法
DE102014220203A1 (de) 2013-11-21 2015-05-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102014206589A1 (de) * 2014-04-04 2015-10-08 Carl Zeiss Smt Gmbh Verfahren zum Justieren eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
DE102014210609A1 (de) 2014-06-04 2015-12-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017215664A1 (de) * 2017-09-06 2019-03-07 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
DE102023209698A1 (de) 2023-10-04 2025-04-10 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage sowie Verfahren zur Vorgabe einer Beleuchtungspupille

Citations (4)

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US5863712A (en) 1996-01-16 1999-01-26 Hitachi, Ltd. Pattern forming method, projection exposure system, and semiconductor device fabrication method
JP2005524237A (ja) * 2002-04-29 2005-08-11 カール・ツァイス・エスエムティー・アーゲー ひとみフィルタリングを含む投影方法及びそのための投影レンズ
WO2009052932A1 (en) * 2007-10-26 2009-04-30 Carl Zeiss Smt Ag Imaging optical system and projection exposure installation for micro-lithography with an imaging optical system of this type
DE102008041801A1 (de) 2008-09-03 2010-03-04 Carl Zeiss Smt Ag Spektralfilter für die EUV-Mikrolithographie

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DE3934546A1 (de) * 1989-10-17 1991-04-18 Zeiss Carl Fa Verfahren zum verbinden von segmenten eines koerpers, vorrichtungen zur durchfuehrung des verfahrens sowie ein mittels des verfahrens hergestellter spiegel
US5136413A (en) * 1990-11-05 1992-08-04 Litel Instruments Imaging and illumination system with aspherization and aberration correction by phase steps
DE50014428D1 (de) 1999-07-30 2007-08-02 Zeiss Carl Smt Ag Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems
TW550377B (en) 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
TW519574B (en) 2000-10-20 2003-02-01 Nikon Corp Multilayer mirror and method for making the same, and EUV optical system comprising the same, and EUV microlithography system comprising the same
US7843632B2 (en) 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
DE10208854A1 (de) * 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Beleuchtungssystem mit genestetem Kollektor zur annularen Ausleuchtung einer Austrittspupille
JP2005519299A (ja) 2002-03-08 2005-06-30 カール・ツァイス・エスエムティー・アーゲー 光学画像形成システムのゆがみを測定するモアレ方法及び測定システム
JP3919599B2 (ja) 2002-05-17 2007-05-30 キヤノン株式会社 光学素子、当該光学素子を有する光源装置及び露光装置
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
FR2877104B1 (fr) * 2004-10-27 2006-12-29 Sagem Dispositif d'imagerie ou d'insolation, notamment pour la realisation d'un micro-circuit electronique
KR100604942B1 (ko) * 2005-06-18 2006-07-31 삼성전자주식회사 비축상(ｏｆｆ-ａｘｉｓ) 프로젝션 광학계 및 이를 적용한극자외선 리소그래피 장치
DE102005056914A1 (de) 2005-11-29 2007-05-31 Carl Zeiss Smt Ag Projektionsbelichtungsystem
EP1930771A1 (en) 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
JP4986754B2 (ja) * 2007-07-27 2012-07-25 キヤノン株式会社 照明光学系及びそれを有する露光装置
DE102007051669A1 (de) 2007-10-26 2009-04-30 Carl Zeiss Smt Ag Abbildende Optik, Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik sowie Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage
JP2011108974A (ja) * 2009-11-20 2011-06-02 Nikon Corp 波面計測方法及び装置、並びに露光方法及び装置
DE102010043498A1 (de) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863712A (en) 1996-01-16 1999-01-26 Hitachi, Ltd. Pattern forming method, projection exposure system, and semiconductor device fabrication method
JP2005524237A (ja) * 2002-04-29 2005-08-11 カール・ツァイス・エスエムティー・アーゲー ひとみフィルタリングを含む投影方法及びそのための投影レンズ
WO2009052932A1 (en) * 2007-10-26 2009-04-30 Carl Zeiss Smt Ag Imaging optical system and projection exposure installation for micro-lithography with an imaging optical system of this type
DE102008041801A1 (de) 2008-09-03 2010-03-04 Carl Zeiss Smt Ag Spektralfilter für die EUV-Mikrolithographie

Also Published As

Publication number Publication date
EP2635937B1 (en) 2015-08-19
US9720329B2 (en) 2017-08-01
CN103189800B (zh) 2016-08-10
JP2013543274A (ja) 2013-11-28
JP5950129B2 (ja) 2016-07-13
EP2635937A1 (en) 2013-09-11
US20130242278A1 (en) 2013-09-19
DE102010043498A1 (de) 2012-05-10
KR20130102093A (ko) 2013-09-16
TW201239542A (en) 2012-10-01
TWI579648B (zh) 2017-04-21
WO2012059537A1 (en) 2012-05-10
US20160195817A1 (en) 2016-07-07
CN103189800A (zh) 2013-07-03

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