CN103189800B - 微光刻曝光设备的投射物镜 - Google Patents

微光刻曝光设备的投射物镜 Download PDF

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Publication number
CN103189800B
CN103189800B CN201180053146.7A CN201180053146A CN103189800B CN 103189800 B CN103189800 B CN 103189800B CN 201180053146 A CN201180053146 A CN 201180053146A CN 103189800 B CN103189800 B CN 103189800B
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China
Prior art keywords
mirror
arrangement
projection objective
segments
segment
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CN201180053146.7A
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English (en)
Chinese (zh)
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CN103189800A (zh
Inventor
H.恩基什
S.米伦德
H-J.曼
R.弗里曼
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication of CN103189800A publication Critical patent/CN103189800A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/182—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors
    • G02B7/198—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors with means for adjusting the mirror relative to its support
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201180053146.7A 2010-11-05 2011-11-03 微光刻曝光设备的投射物镜 Active CN103189800B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41052110P 2010-11-05 2010-11-05
US61/410,521 2010-11-05
DE201010043498 DE102010043498A1 (de) 2010-11-05 2010-11-05 Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102010043498.1 2010-11-05
PCT/EP2011/069308 WO2012059537A1 (en) 2010-11-05 2011-11-03 Projection objective of a microlithographic exposure apparatus

Publications (2)

Publication Number Publication Date
CN103189800A CN103189800A (zh) 2013-07-03
CN103189800B true CN103189800B (zh) 2016-08-10

Family

ID=45970908

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180053146.7A Active CN103189800B (zh) 2010-11-05 2011-11-03 微光刻曝光设备的投射物镜

Country Status (8)

Country Link
US (2) US20130242278A1 (enExample)
EP (1) EP2635937B1 (enExample)
JP (1) JP5950129B2 (enExample)
KR (1) KR101909301B1 (enExample)
CN (1) CN103189800B (enExample)
DE (1) DE102010043498A1 (enExample)
TW (1) TWI579648B (enExample)
WO (1) WO2012059537A1 (enExample)

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DE102010041623A1 (de) * 2010-09-29 2012-03-29 Carl Zeiss Smt Gmbh Spiegel
DE102010043498A1 (de) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102011076549A1 (de) 2011-05-26 2012-11-29 Carl Zeiss Smt Gmbh Optische Anordnung in einer mikrolithographischen Projektionsbelichtungsanlage
DE102012212064A1 (de) 2012-07-11 2014-01-16 Carl Zeiss Smt Gmbh Lithographianlage mit segmentiertem Spiegel
US9448343B2 (en) 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
GB2513927A (en) * 2013-05-10 2014-11-12 Zeiss Carl Smt Gmbh Optical element arrangement with an optical element split into optical sub-elements
CN103488061B (zh) * 2013-10-09 2015-01-21 北京理工大学 极紫外光刻机中匹配多个物镜的照明系统调整与设计方法
DE102014220203A1 (de) 2013-11-21 2015-05-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102014206589A1 (de) * 2014-04-04 2015-10-08 Carl Zeiss Smt Gmbh Verfahren zum Justieren eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
DE102014210609A1 (de) 2014-06-04 2015-12-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017215664A1 (de) * 2017-09-06 2019-03-07 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
DE102023209698A1 (de) 2023-10-04 2025-04-10 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage sowie Verfahren zur Vorgabe einer Beleuchtungspupille

Citations (7)

* Cited by examiner, † Cited by third party
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US5136413A (en) * 1990-11-05 1992-08-04 Litel Instruments Imaging and illumination system with aspherization and aberration correction by phase steps
US5863712A (en) * 1996-01-16 1999-01-26 Hitachi, Ltd. Pattern forming method, projection exposure system, and semiconductor device fabrication method
CN1350185A (zh) * 2000-10-20 2002-05-22 株式会社尼康 用于euv的多层反射镜、其波前光行差校正法及包含它的euv光学系统
US20050093041A1 (en) * 2002-03-01 2005-05-05 Carl Zeiss Smt Ag Illumination system having a nested collector for annular illumination of an exit pupil
US20080143984A1 (en) * 2002-04-29 2008-06-19 Carl Zeiss Smt Ag Projection method including pupillary filtering and a projection lens therefor
DE102008041801A1 (de) * 2008-09-03 2010-03-04 Carl Zeiss Smt Ag Spektralfilter für die EUV-Mikrolithographie
CN101836151A (zh) * 2007-10-26 2010-09-15 卡尔蔡司Smt股份公司 成像光学系统、包括该类型的成像光学系统的用于微光刻的投射曝光设备、以及利用该类型的投射曝光设备生产微结构部件的方法

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DE3934546A1 (de) * 1989-10-17 1991-04-18 Zeiss Carl Fa Verfahren zum verbinden von segmenten eines koerpers, vorrichtungen zur durchfuehrung des verfahrens sowie ein mittels des verfahrens hergestellter spiegel
JP2003506881A (ja) 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
TW550377B (en) 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US7843632B2 (en) 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
WO2003076891A2 (en) 2002-03-08 2003-09-18 Carl Zeiss Smt Ag Moiré method and measuring system for measuring the distortion of an optical imaging system
JP3919599B2 (ja) 2002-05-17 2007-05-30 キヤノン株式会社 光学素子、当該光学素子を有する光源装置及び露光装置
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
FR2877104B1 (fr) * 2004-10-27 2006-12-29 Sagem Dispositif d'imagerie ou d'insolation, notamment pour la realisation d'un micro-circuit electronique
KR100604942B1 (ko) 2005-06-18 2006-07-31 삼성전자주식회사 비축상(ｏｆｆ-ａｘｉｓ) 프로젝션 광학계 및 이를 적용한극자외선 리소그래피 장치
DE102005056914A1 (de) 2005-11-29 2007-05-31 Carl Zeiss Smt Ag Projektionsbelichtungsystem
EP1930771A1 (en) 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
JP4986754B2 (ja) 2007-07-27 2012-07-25 キヤノン株式会社 照明光学系及びそれを有する露光装置
CN102819197B (zh) * 2007-10-26 2016-06-22 卡尔蔡司Smt有限责任公司 成像光学系统、投射曝光设备、微结构部件及其产生方法
JP2011108974A (ja) * 2009-11-20 2011-06-02 Nikon Corp 波面計測方法及び装置、並びに露光方法及び装置
DE102010043498A1 (de) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136413A (en) * 1990-11-05 1992-08-04 Litel Instruments Imaging and illumination system with aspherization and aberration correction by phase steps
US5863712A (en) * 1996-01-16 1999-01-26 Hitachi, Ltd. Pattern forming method, projection exposure system, and semiconductor device fabrication method
CN1350185A (zh) * 2000-10-20 2002-05-22 株式会社尼康 用于euv的多层反射镜、其波前光行差校正法及包含它的euv光学系统
US20050093041A1 (en) * 2002-03-01 2005-05-05 Carl Zeiss Smt Ag Illumination system having a nested collector for annular illumination of an exit pupil
US20080143984A1 (en) * 2002-04-29 2008-06-19 Carl Zeiss Smt Ag Projection method including pupillary filtering and a projection lens therefor
CN101836151A (zh) * 2007-10-26 2010-09-15 卡尔蔡司Smt股份公司 成像光学系统、包括该类型的成像光学系统的用于微光刻的投射曝光设备、以及利用该类型的投射曝光设备生产微结构部件的方法
DE102008041801A1 (de) * 2008-09-03 2010-03-04 Carl Zeiss Smt Ag Spektralfilter für die EUV-Mikrolithographie

Also Published As

Publication number Publication date
US9720329B2 (en) 2017-08-01
KR101909301B1 (ko) 2018-12-10
TW201239542A (en) 2012-10-01
EP2635937A1 (en) 2013-09-11
KR20130102093A (ko) 2013-09-16
JP5950129B2 (ja) 2016-07-13
EP2635937B1 (en) 2015-08-19
US20160195817A1 (en) 2016-07-07
US20130242278A1 (en) 2013-09-19
DE102010043498A1 (de) 2012-05-10
CN103189800A (zh) 2013-07-03
TWI579648B (zh) 2017-04-21
JP2013543274A (ja) 2013-11-28
WO2012059537A1 (en) 2012-05-10

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