KR101905590B1 - 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스 - Google Patents

얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스 Download PDF

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KR101905590B1
KR101905590B1 KR1020177020575A KR20177020575A KR101905590B1 KR 101905590 B1 KR101905590 B1 KR 101905590B1 KR 1020177020575 A KR1020177020575 A KR 1020177020575A KR 20177020575 A KR20177020575 A KR 20177020575A KR 101905590 B1 KR101905590 B1 KR 101905590B1
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contact
transparent conductive
layer
iii nitride
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KR20170098304A (ko
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프레데릭 듀퐁
존 이. 에플러
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코닌클리케 필립스 엔.브이.
루미레즈 엘엘씨
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Assigned to 루미리즈 홀딩 비.브이. reassignment 루미리즈 홀딩 비.브이. 권리의 전부이전등록 Assignors: 루미레즈 엘엘씨, 코닌클리케 필립스 엔.브이.
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    • H01L33/42—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H01L33/0079—
    • H01L33/10—
    • H01L33/30—
    • H01L33/32—
    • H01L33/505—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H01L2933/0016—

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KR1020177020575A 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스 Active KR101905590B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/624,268 2009-11-23
US12/624,268 US8581229B2 (en) 2009-11-23 2009-11-23 III-V light emitting device with thin n-type region
PCT/IB2010/055147 WO2011061664A1 (en) 2009-11-23 2010-11-12 Iii-v light emitting device with thin n-type region

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127016290A Division KR101762368B1 (ko) 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스

Publications (2)

Publication Number Publication Date
KR20170098304A KR20170098304A (ko) 2017-08-29
KR101905590B1 true KR101905590B1 (ko) 2018-10-10

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KR1020177020575A Active KR101905590B1 (ko) 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스
KR1020127016290A Active KR101762368B1 (ko) 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스

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Country Status (7)

Country Link
US (2) US8581229B2 (https=)
EP (1) EP2504868B1 (https=)
JP (1) JP5674806B2 (https=)
KR (2) KR101905590B1 (https=)
CN (1) CN102714255B (https=)
TW (1) TWI523258B (https=)
WO (1) WO2011061664A1 (https=)

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DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
KR20120099318A (ko) * 2011-01-26 2012-09-10 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US10056531B2 (en) 2011-08-26 2018-08-21 Lumileds Llc Method of processing a semiconductor structure
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
US9728458B2 (en) 2012-07-31 2017-08-08 Soitec Methods for fabrication of semiconductor structures using laser lift-off process, and related semiconductor structures
US9653647B2 (en) 2013-06-14 2017-05-16 Micron Technology, Inc. Ultrathin solid state dies and methods of manufacturing the same
EP3127143A4 (en) * 2014-03-31 2017-11-29 Nanyang Technological University Methods of recycling substrates and carrier substrates
DE102016124646A1 (de) * 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
CN111933765B (zh) * 2020-07-03 2022-04-26 厦门士兰明镓化合物半导体有限公司 微型发光二极管及制作方法，微型led显示模块及制作方法

Citations (3)

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KR200370465Y1 (ko) * 2004-04-23 2004-12-17 슈퍼노바 옵토일렉트로닉스 코포레이션 갈륨 질화물계 발광 다이오드의 수직 전극 구조
JP2005012188A (ja) * 2003-05-22 2005-01-13 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2008053425A (ja) * 2006-08-24 2008-03-06 Matsushita Electric Ind Co Ltd 半導体発光装置

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JP3757544B2 (ja) * 1997-05-21 2006-03-22 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
WO2002056394A1 (en) 2001-01-09 2002-07-18 Emcore Corporation Electrode structures for p-type nitride semiconductores and mehtods of making same
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US7880182B2 (en) * 2002-07-15 2011-02-01 Epistar Corporation Light-emitting element array
TWI249148B (en) * 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
JP4135567B2 (ja) * 2003-06-10 2008-08-20 松下電器産業株式会社 キャップ取り外し装置
US20050173724A1 (en) * 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
JP2005268581A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
TWI299914B (en) * 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
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JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
JP4929924B2 (ja) * 2006-08-25 2012-05-09 サンケン電気株式会社 半導体発光素子、その製造方法、及び複合半導体装置
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JP2008053425A (ja) * 2006-08-24 2008-03-06 Matsushita Electric Ind Co Ltd 半導体発光装置

Also Published As

Publication number Publication date
KR101762368B1 (ko) 2017-07-27
US8878160B2 (en) 2014-11-04
JP5674806B2 (ja) 2015-02-25
WO2011061664A1 (en) 2011-05-26
US20140034990A1 (en) 2014-02-06
TW201125161A (en) 2011-07-16
KR20120094502A (ko) 2012-08-24
TWI523258B (zh) 2016-02-21
EP2504868A1 (en) 2012-10-03
CN102714255A (zh) 2012-10-03
KR20170098304A (ko) 2017-08-29
US8581229B2 (en) 2013-11-12
JP2013511853A (ja) 2013-04-04
CN102714255B (zh) 2015-10-21
EP2504868B1 (en) 2018-05-16
US20110121332A1 (en) 2011-05-26

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