JP5674806B2 - 薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス - Google Patents

薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス Download PDF

Info

Publication number
JP5674806B2
JP5674806B2 JP2012540516A JP2012540516A JP5674806B2 JP 5674806 B2 JP5674806 B2 JP 5674806B2 JP 2012540516 A JP2012540516 A JP 2012540516A JP 2012540516 A JP2012540516 A JP 2012540516A JP 5674806 B2 JP5674806 B2 JP 5674806B2
Authority
JP
Japan
Prior art keywords
transparent conductive
type region
layer
iii nitride
nitride material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012540516A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013511853A5 (https=
JP2013511853A (ja
Inventor
フレデリック デュポン
フレデリック デュポン
ジョン イー エプラー
ジョン イー エプラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2013511853A publication Critical patent/JP2013511853A/ja
Publication of JP2013511853A5 publication Critical patent/JP2013511853A5/ja
Application granted granted Critical
Publication of JP5674806B2 publication Critical patent/JP5674806B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2012540516A 2009-11-23 2010-11-12 薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス Active JP5674806B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/624,268 2009-11-23
US12/624,268 US8581229B2 (en) 2009-11-23 2009-11-23 III-V light emitting device with thin n-type region
PCT/IB2010/055147 WO2011061664A1 (en) 2009-11-23 2010-11-12 Iii-v light emitting device with thin n-type region

Publications (3)

Publication Number Publication Date
JP2013511853A JP2013511853A (ja) 2013-04-04
JP2013511853A5 JP2013511853A5 (https=) 2013-12-26
JP5674806B2 true JP5674806B2 (ja) 2015-02-25

Family

ID=43502070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012540516A Active JP5674806B2 (ja) 2009-11-23 2010-11-12 薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス

Country Status (7)

Country Link
US (2) US8581229B2 (https=)
EP (1) EP2504868B1 (https=)
JP (1) JP5674806B2 (https=)
KR (2) KR101905590B1 (https=)
CN (1) CN102714255B (https=)
TW (1) TWI523258B (https=)
WO (1) WO2011061664A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
KR20120099318A (ko) * 2011-01-26 2012-09-10 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US10056531B2 (en) 2011-08-26 2018-08-21 Lumileds Llc Method of processing a semiconductor structure
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
US9728458B2 (en) 2012-07-31 2017-08-08 Soitec Methods for fabrication of semiconductor structures using laser lift-off process, and related semiconductor structures
US9653647B2 (en) 2013-06-14 2017-05-16 Micron Technology, Inc. Ultrathin solid state dies and methods of manufacturing the same
EP3127143A4 (en) * 2014-03-31 2017-11-29 Nanyang Technological University Methods of recycling substrates and carrier substrates
DE102016124646A1 (de) * 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
CN111933765B (zh) * 2020-07-03 2022-04-26 厦门士兰明镓化合物半导体有限公司 微型发光二极管及制作方法，微型led显示模块及制作方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3757544B2 (ja) * 1997-05-21 2006-03-22 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
WO2002056394A1 (en) 2001-01-09 2002-07-18 Emcore Corporation Electrode structures for p-type nitride semiconductores and mehtods of making same
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US7880182B2 (en) * 2002-07-15 2011-02-01 Epistar Corporation Light-emitting element array
TWI249148B (en) * 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
JP4295669B2 (ja) * 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
JP4135567B2 (ja) * 2003-06-10 2008-08-20 松下電器産業株式会社 キャップ取り外し装置
US20050173724A1 (en) * 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
JP2005268581A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
TWM255518U (en) * 2004-04-23 2005-01-11 Super Nova Optoelectronics Cor Vertical electrode structure of Gallium Nitride based LED
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
TWI299914B (en) * 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
JP2008053425A (ja) * 2006-08-24 2008-03-06 Matsushita Electric Ind Co Ltd 半導体発光装置
JP4929924B2 (ja) * 2006-08-25 2012-05-09 サンケン電気株式会社 半導体発光素子、その製造方法、及び複合半導体装置
JP2008177525A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
US8704254B2 (en) * 2006-12-22 2014-04-22 Philips Lumileds Lighting Company, Llc Light emitting device including a filter
TWI331411B (en) * 2006-12-29 2010-10-01 Epistar Corp High efficiency light-emitting diode and method for manufacturing the same
US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
US20090050905A1 (en) * 2007-08-20 2009-02-26 Abu-Ageel Nayef M Highly Efficient Light-Emitting Diode
US20090140279A1 (en) * 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
KR101025948B1 (ko) * 2007-12-21 2011-03-30 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7939839B2 (en) * 2008-09-11 2011-05-10 Bridgelux, Inc. Series connected segmented LED
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
US8089091B2 (en) * 2009-06-18 2012-01-03 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with a contact formed on a textured surface
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device

Also Published As

Publication number Publication date
KR101762368B1 (ko) 2017-07-27
US8878160B2 (en) 2014-11-04
WO2011061664A1 (en) 2011-05-26
US20140034990A1 (en) 2014-02-06
TW201125161A (en) 2011-07-16
KR101905590B1 (ko) 2018-10-10
KR20120094502A (ko) 2012-08-24
TWI523258B (zh) 2016-02-21
EP2504868A1 (en) 2012-10-03
CN102714255A (zh) 2012-10-03
KR20170098304A (ko) 2017-08-29
US8581229B2 (en) 2013-11-12
JP2013511853A (ja) 2013-04-04
CN102714255B (zh) 2015-10-21
EP2504868B1 (en) 2018-05-16
US20110121332A1 (en) 2011-05-26

Similar Documents

Publication Publication Date Title
JP5674806B2 (ja) 薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス
JP5441297B2 (ja) Ｉｉｉ−ｖ族発光デバイス
KR101674228B1 (ko) 복합 기판 상에 성장되는 반도체 발광 장치
KR101783796B1 (ko) 복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법
JP6419077B2 (ja) 波長変換発光デバイス
JP6535598B2 (ja) フィルタ及び保護層を含む発光デバイス
KR102071163B1 (ko) 광 추출 구조체를 포함하는 ⅲ-ⅴ족 발광 장치
US20110177638A1 (en) Semiconductor light emitting device with curvature control layer
CN102484178A (zh) 具有曲率控制层的iii族氮化物发光装置
CN102884643B (zh) 生长在松弛层上的iii族氮化物发光装置
KR101810711B1 (ko) 반도체 소자를 성장시키기 위한 복합 성장 기판
TW201332149A (zh) 於半導體發光裝置上形成厚金屬層

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20130711

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20130712

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131108

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131108

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140324

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140623

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141126

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141222

R150 Certificate of patent or registration of utility model

Ref document number: 5674806

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250