KR101901328B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR101901328B1
KR101901328B1 KR1020150121739A KR20150121739A KR101901328B1 KR 101901328 B1 KR101901328 B1 KR 101901328B1 KR 1020150121739 A KR1020150121739 A KR 1020150121739A KR 20150121739 A KR20150121739 A KR 20150121739A KR 101901328 B1 KR101901328 B1 KR 101901328B1
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film
processed
processing
pattern
data
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KR20160115652A (ko
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다테히토 우스이
고사 히로타
사토미 이노우에
시게루 나카모토
고스케 후쿠치
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H01L21/0234—
    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020150121739A 2015-03-26 2015-08-28 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR101901328B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-063603 2015-03-26
JP2015063603A JP6523732B2 (ja) 2015-03-26 2015-03-26 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20160115652A KR20160115652A (ko) 2016-10-06
KR101901328B1 true KR101901328B1 (ko) 2018-09-21

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KR1020150121739A Active KR101901328B1 (ko) 2015-03-26 2015-08-28 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
US (2) US9741629B2 (enExample)
JP (1) JP6523732B2 (enExample)
KR (1) KR101901328B1 (enExample)
CN (2) CN106024616B (enExample)
TW (1) TWI593020B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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CN109417019B (zh) * 2016-07-04 2023-12-05 三菱电机株式会社 半导体装置的制造方法
WO2020031224A1 (ja) 2018-08-06 2020-02-13 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマアッシング装置
JP7422557B2 (ja) * 2019-02-28 2024-01-26 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102728517B1 (ko) * 2019-04-08 2024-11-13 삼성전자주식회사 플라즈마 모니터링 장치 및 이를 포함하는 플라즈마 처리 장치
KR102510305B1 (ko) * 2020-03-11 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
KR102515864B1 (ko) * 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US11437289B2 (en) * 2020-09-30 2022-09-06 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US12051575B2 (en) 2020-09-30 2024-07-30 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
KR20230131167A (ko) * 2022-03-04 2023-09-12 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
CN118866675A (zh) * 2024-09-25 2024-10-29 苏州矩阵光电有限公司 干法刻蚀工艺的优化方法

Citations (3)

* Cited by examiner, † Cited by third party
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US20060287753A1 (en) 2005-06-16 2006-12-21 Jason Plumhoff Process change detection through the use of evolutionary algorithms
US20080216956A1 (en) 2007-03-07 2008-09-11 Shigeru Nakamoto Plasma processing apparatus
JP2015023105A (ja) * 2013-07-18 2015-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法

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US4675072A (en) * 1986-06-25 1987-06-23 International Business Machines Corporation Trench etch endpoint detection by LIF
JP4567828B2 (ja) 1999-09-14 2010-10-20 東京エレクトロン株式会社 終点検出方法
US6824813B1 (en) * 2000-04-06 2004-11-30 Applied Materials Inc Substrate monitoring method and apparatus
JP3854810B2 (ja) 2000-06-20 2006-12-06 株式会社日立製作所 発光分光法による被処理材の膜厚測定方法及び装置とそれを用いた被処理材の処理方法及び装置
TW517306B (en) * 2001-09-05 2003-01-11 Hitachi Ltd Method and device to determine the end point of semiconductor device processing and the processing method and device of the processed material using the method
JP3694662B2 (ja) * 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP3890254B2 (ja) * 2002-05-07 2007-03-07 沖電気工業株式会社 半導体装置の製造方法
US6972848B2 (en) * 2003-03-04 2005-12-06 Hitach High-Technologies Corporation Semiconductor fabricating apparatus with function of determining etching processing state
JP4640828B2 (ja) * 2006-03-17 2011-03-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4969545B2 (ja) * 2008-09-22 2012-07-04 株式会社日立ハイテクノロジーズ 半導体製造装置
JP5199981B2 (ja) 2009-11-04 2013-05-15 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP6186152B2 (ja) * 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20060287753A1 (en) 2005-06-16 2006-12-21 Jason Plumhoff Process change detection through the use of evolutionary algorithms
US20080216956A1 (en) 2007-03-07 2008-09-11 Shigeru Nakamoto Plasma processing apparatus
JP2015023105A (ja) * 2013-07-18 2015-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP2016184638A (ja) 2016-10-20
KR20160115652A (ko) 2016-10-06
TWI593020B (zh) 2017-07-21
US20170358504A1 (en) 2017-12-14
TW201635377A (zh) 2016-10-01
CN110767581A (zh) 2020-02-07
JP6523732B2 (ja) 2019-06-05
CN106024616B (zh) 2019-11-26
US20160284610A1 (en) 2016-09-29
US9741629B2 (en) 2017-08-22
CN106024616A (zh) 2016-10-12

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